Transcript
PD-94608C
IRHNJ597034 JANSR2N7520U3 IRHNJC597034 JANSR2N7520U3C 60V, P-CHANNEL
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)
REF: MIL-PRF-19500/732
5 TECHNOLOGY
Product Summary Part Number IRHNJ597034 IRHNJ593034
Radiation Level RDS(on) 100K Rads (Si) 0.085Ω 300K Rads (Si) 0.085Ω
ID QPL Part Number -21A JANSR2N7520U3 -21A JANSF2N7520U3
Refer to Page 8 for Additional Part Number IRHNJC597034 - SMD-0.5 (Ceramic Lid) International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
SMD-0.5 (Metal Lid)
Features: n n n n n n n n n n n
Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight ESD Rating: Class 1C per MIL-STD-750, Method 1020
Absolute Maximum Ratings
Pre-Irradiation
Parameter ID @ VGS = -12V, TC = 25°C ID @ VGS = -12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG
Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À Peak Diode Recovery dv/dt  Operating Junction Storage Temperature Range Pckg. Mounting Surface Temp. Weight
Units -21 -13.3 -84 75 0.6 ±20 110 -21 7.5 -2.0 -55 to 150
A W W/°C V mJ A mJ V/ns °C
300 (for 5s) 1.0 (Typical)
g
For footnotes refer to the last page
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1 02/11/15
IRHNJ597034, JANSR2N7520U3
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) BVDSS
Parameter
Min
Drain-to-Source Breakdown Voltage
-60
—
—
V
VGS = 0V, ID = -1.0mA
—
0.063
—
V/°C
Reference to 25°C, ID = -1.0mA
—
—
0.085
Ω
VGS = -12V, ID = -13.3AÃ
-2.0 10 — —
— — — —
-4.0 — -10 -25
V S
nC
VDS = VGS, ID = -1.0mA VDS = -15V, IDS = -13.3A Ã VDS = -48V ,VGS = 0V VDS = -48V, VGS = 0V, TJ =125°C VGS = -20V VGS = 20V VGS =-12V, ID = -21A VDS = -30V
ns
VDD = -30V, ID = -21A, VGS =-12V, RG = 7.5Ω,
∆BV DSS /∆T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Typ Max Units
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
— — — — — — — — — —
— — — — — — — — — 4.0
-100 100 45 18 13 25 65 75 50 —
Ciss C oss C rss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
— — —
1540 590 60
— — —
µA
nA
nH
pF
Test Conditions
Measured from the center of drain pad to center of source pad VGS = 0V, VDS = -25V f = 1.0MHz
Source-Drain Diode Ratings and Characteristics Parameter
Min Typ Max Units
IS ISM VSD t rr Q RR
Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) À Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
ton
Forward Turn-On Time
— — — — —
— — — — —
-21 -84 -5.0 100 200
Test Conditions
A V ns nC
Tj = 25°C, IS = -21A, VGS = 0V Ã Tj = 25°C, IF = -21A, di/dt ≤ -100A/µs VDD ≤ -25V Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance Parameter RthJC RthJ-PCB
Junction-to-Case Junction-to-PC board
Min Typ Max — —
— 6.9
1.67 —
Units °C/W
Test Conditions soldered to a 2 sq. copper-clad board
Note: Corresponding Spice and Saber models are available on International Rectifier website. For footnotes refer to the last page
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Radiation Characteristics Pre-Irradiation
IRHNJ597034, JANSR2N7520U3
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD
Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source à On-State Resistance (TO-3) Static Drain-to-Source à On-State Resistance (SMD-0.5) Diode Forward Voltage Ã
Units
Test Conditions
V
µA Ω
VGS = 0V, I D = -1.0mA VGS = VDS, ID = -1.0mA VGS = -20V V GS = 20 V VDS= -48V, VGS = 0V VGS = -12V, ID = -13.3A
0.085
Ω
VGS = -12V, ID = -13.3A
-5.0
V
VGS = 0V, IS = -21A
100K Rads(Si)1 Min Max
300KRads(Si)2 Min Max
-60 -2.0 — — — —
— -4.0 -100 100 -10 0.087
-60 -2.0 — — — —
— -5.0 -100 100 -10 0.087
—
0.085
—
—
-5.0
—
nA
1. Part number IRHNJ597034 and additional part number listed on page 8 2. Part number IRHNJ593034 and additional part number listed on page 8
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area LET 2
(MeV/(mg/cm ))
Energy
Range
(MeV)
(µm)
VDS (V) @VGS =
@VGS =
@VGS =
@VGS =
@VGS =
0V
5V
10V
15V
20V
270 ± 7.5%
35 ± 7.5%
-60
-60
-60
-60
-60
61 ± 5%
330 ± 7.5%
30 ± 7.5%
-60
-60
-60
-45
-25
84 ± 5%
350 ± 10%
28 ± 7.5%
-60
-60
-60
-
-
Bias VDS (V)
38 ± 5%
-70 -60 -50 -40 -30 -20 -10 0
LET=38 ± 5% LET=61 ± 5% LET=84 ± 5%
0
5
10
15
20
Bias VGS (V)
Fig a. Typical Single Event Effect, Safe Operating Area For footnotes refer to the last page
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IRHNJ597034, JANSR2N7520U3
100
VGS TOP -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V
VGS -15V -12V -10V -9.0V -8.0V -7.0V - 6.0V BOTTOM -5.0V TOP
-I D, Drain-to-Source Current (A)
-I D, Drain-to-Source Current (A)
100
Pre-Irradiation
-5.0V
10
20µs PULSE WIDTH Tj = 25°C 1
10
20µs PULSE WIDTH Tj = 150°C 1
0.1
1
10
100
0.1
-VDS , Drain-to-Source Voltage (V)
-I D, Drain-to-Source Current ( Α)
T J = 25°C T J = 150°C
VDS = -25V 15 20µs PULSE WIDTH 10 7
8
9
-V GS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
10
RDS(on) , Drain-to-Source On Resistance (Normalized)
2.0
6
10
100
Fig 2. Typical Output Characteristics
100
5
1
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
4
-5.0V
-22A ID = -21A
1.5
1.0
0.5
0.0 -60 -40 -20
VGS = -12V 0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance Vs. Temperature
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Pre-Irradiation
2500
16
VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED
Ciss 1500
ID= -21A -VGS, Gate-to-Source Voltage (V)
2000
C, Capacitance (pF)
IRHNJ597034, JANSR2N7520U3
Crss = Cgd Coss = Cds + Cgd
Coss
1000
500
VDS= -48V VDS= -30V VDS= -12V
12
8
4 FOR TEST CIRCUIT SEE FIGURE 13
Crss 0
0 1
10
100
0
-VDS, Drain-to-Source Voltage (V)
10
15
20
25
30
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
100
1000
T J = 25°C
10
-I D, Drain-to-Source Current (A)
-I SD , Reverse Drain Current ( Α)
5
T J = 150°C
VGS = 0V
1.0 0.5
1.5
2.5
3.5
4.5
5.5
-V SD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
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OPERATION IN THIS AREA LIMITED BY R DS(on) 100
100µs
10
1ms 10ms
1 Tc = 25°C Tj = 150°C Single Pulse
0.1 6.5
1
DC
10
100
-VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
5
IRHNJ597034, JANSR2N7520U3
Pre-Irradiation
24 V GS
20 -I D, Drain Current (A)
RD
V DS
D.U.T.
RG
-
V DD
+
16 V GS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %
12 8
Fig 10a. Switching Time Test Circuit
4
td(on)
tr
t d(off)
tf
VGS 10%
0 25
50
75
100
125
150
T C , Case Temperature (°C) 90%
Fig 9. Maximum Drain Current Vs. Case Temperature
VDS
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
1 D = 0.50 0.20 0.10 PDM
0.05
0.1
0.02 0.01
0.01 0.00001
SINGLE PULSE (THERMAL RESPONSE)
t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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Pre-Irradiation
IRHNJ597034, JANSR2N7520U3
200
-
D.U.T
RG
VGS -20V
+
IAS
tp
VVDD DD
DRIVER
A
0.01Ω
15V
Fig 12a. Unclamped Inductive Test Circuit
EAS , Single Pulse Avalanche Energy (mJ)
L
VDS
ID -9.4A -13.3A BOTTOM -21A TOP
160
120
80
40
0
I AS
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current tp V(BR)DSS
Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T.
QG
-12 V
QGS
50KΩ
-12V 12V
.2µF .3µF
QGD
D.U.T.
+VDS
VGS
VG
-3mA
Charge
Fig 13a. Basic Gate Charge Waveform
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IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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IRHNJ597034, JANSR2N7520U3
Pre-Irradiation
Footnotes: À Repetitive Rating; Pulse width limited by
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2% Ä Total Dose Irradiation with VGS Bias.
maximum junction temperature. Á VDD = -25V, starting TJ = 25°C, L = 0.5mH Peak IL = -21A, VGS = -12V Â ISD ≤ -21A, di/dt ≤ -435A/µs, VDD ≤ -60V, TJ ≤ 150°C
-12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. Å Total Dose Irradiation with VDS Bias. -48 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A.
Additional Product Summary (continued from page 1 and 3) Product Summary Part Number IRHNJC597034 IRHNJC593034
Radiation Level RDS(on) I D 100K Rads (Si) 0.085Ω -21A 300K Rads (Si) 0.085Ω -21A
QPL Part Number JANSR2N7520U3C JANSF2N7520U3C
SMD-0.5 (CERAMIC LID)
Case Outline and Dimensions — SMD-0.5 (Metal Lid)
(NOTE 6) NOTES:
PAD ASSIGNMENTS 1 = DRAIN 2 = GATE 3 = SOURCE
6. For Ceramic Lid, all dimensions are the same, except overall thickness of Maximum 3.40 [.134]
IR WORLD HEADQUARTERS: 101 N Sepulveda Blvd., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 02/2015
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