Transcript
Preliminary Datasheet
RJH60A83RDPE 600V - 10A - IGBT Application: Inverter
R07DS0806EJ0200 Rev.2.00 Jul 12, 2012
Features Reverse conducting IGBT with monolithic diode Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.1 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25°C) Built-in fast recovery diode (trr = 130 ns typ.) in one package Trench gate and thin wafer technology High speed switching tf = 45 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 10 A, Rg = 5 , Ta = 25°C, inductive load)
Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) ) C 4
1. Gate 2. Collector 3. Emitter 4. Collector
G 1
2
3 E
Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage / diode reverse voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Collector peak current
Symbol VCES / VR VGES IC IC Ic(peak) Note1
Ratings 600 ±30 20 10 40
Unit V V A A A
Collector to emitter diode forward current Collector to emitter diode forward peak current Collector dissipation Junction to case thermal resistance Junction temperature Storage temperature
iDF iDF(peak) Note1 Note2 PC j-c Note2 Tj Tstg
10 40 52 2.38 150 –55 to +150
A A W C/ W C C
Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tc = 25C
R07DS0806EJ0200 Rev.2.00 Jul 12, 2012
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RJH60A83RDPE
Preliminary
Electrical Characteristics (Ta = 25°C) Item Collector to emitter breakdown voltage
V(BR)CES
Min 600
Zero gate voltage collector current / diode reverse current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage
ICES / IR
—
—
1
A
VCE = 600 V, VGE = 0 V
IGES VGE(off) VCE(sat) VCE(sat) Cies Coes Cres Qg Qge Qgc td(on) tr td(off)
— 4.5 — — — — — — — — — — —
— — 2.1 3.1 280 19 11 19.7 3.4 12.0 31 14 54
±100 7.5 2.6 — — — — — — — — — —
nA V V V pF pF pF nC nC nC ns ns ns
VGE = ±30 V, VCE = 0 V VCE = 10 V, IC = 1 mA IC = 10 A, VGE = 15 V Note3 IC = 20 A, VGE = 15 V Note3
tf Eon Eoff Etotal tsc
— — — — 3.0
45 0.23 0.16 0.39 5.0
— — — — —
ns mJ mJ mJ s
FRD Forward voltage
VF
FRD reverse recovery time FRD reverse recovery charge FRD peak reverse recovery current
trr Qrr Irr
— — — —
2.3 130 0.28 5.9
— — — —
V ns C A
Input capacitance Output capacitance Reveres transfer capacitance Total gate charge Gate to emitter charge Gate to collector charge Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Short circuit withstand time
Symbol
Typ —
Max —
Unit V
Test Conditions IC =10 A, VGE = 0
VCE = 25 V VGE = 0 V f = 1 MHz VGE = 15 V VCE = 300 V IC = 10 A VCC = 300V VGE = 15 V IC = 10 A, Rg = 5 Inductive load
VCE 360 V, VGE = 15 V Tj=100C IF = 10 A Note3 IF = 10 A diF/dt = 100 A/s
Notes: 3. Pulse test.
R07DS0806EJ0200 Rev.2.00 Jul 12, 2012
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RJH60A83RDPE
Preliminary
Main Characteristics Collector Dissipation vs. Case Temperature
Maximum DC Collector Current vs. Case Temperature 25
50
Collector Current IC (A)
Collector Dissipation Pc (W)
60
40 30 20 10 0 25
50
75
10
5
100 125 150 175
0
25
50
75
100 125 150 175
Case Temperature Tc (°C)
Case Temperature Tc (°C)
Maximum Safe Operation Area
Turn-off SOA 50
PW 10
10
=
0μ
s
10
Collector Current IC (A)
100
μs
1
0.1
0.01 1
40
30
20
10
Tc = 25°C Single pulse 0 10
100
1000
0
200
400
600
Collector to Emitter Voltage VCE (V)
Typical Output Characteristics
Typical Output Characteristics
40
Tc = 25°C Pulse Test
40
18 V 15 V
30
20
12 V
10
10 V
Tc = 150°C Pulse Test 18 V
30
15 V 20 12 V 10
10 V
VGE = 8 V
VGE = 8 V 0
800
Collector to Emitter Voltage VCE (V)
Collector Current IC (A)
Collector Current IC (A)
15
0 0
Collector Current IC (A)
20
0
1
2
3
4
5
Collector to Emitter Voltage VCE (V)
R07DS0806EJ0200 Rev.2.00 Jul 12, 2012
0
0
1
2
3
4
5
Collector to Emitter Voltage VCE (V)
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RJH60A83RDPE
Preliminary
Collector to Emitter Saturation Voltage VCE(sat) (V)
6
5
4 IC = 20 A
3
10 A
2 Tc = 25°C Pulse Test 1 8
10
12
14
16
18
6
5
IC = 20 A
4
3 10 A 2 Tc = 150°C Pulse Test 1
20
8
14
16
20
18
Typical Transfer Characteristics
Collector to Emitter Saturation Voltage vs. Junction Temparature (Typical)
Tc = 150°C 25°C
20
10 VCE = 10 V Pulse Test 0 0
4
8
12
16
20
5 VGE = 15 V Pulse Test IC = 20 A
4
3 10 A 5A
2
1 −25
0
25
50
75
100 125 150
Case Temparature Tc (°C)
Gate to Emitter Voltage VGE (V) Gate to Emitter Cutoff Voltage vs. Junction Temparature (Typical)
Frequency Characteristics (Typical)
10
6
8
IC = 10 mA
6 1 mA
4
2 VCE = 10 V Pulse Test 0
25
50
75
100 125 150
Case Temparature Tc (°C)
R07DS0806EJ0200 Rev.2.00 Jul 12, 2012
Collector Current IC(RMS) (A)
Gate to Emitter Cutoff Voltage VGE(off) (V)
12
Gate to Emitter Voltage VGE (V)
30
0 −25
10
Gate to Emitter Voltage VGE (V)
40
Collector Current IC (A)
Collector to Emitter Saturation Voltage vs. Gate to Emitter Voltage (Typical)
Collector to Emitter Saturation Voltage VCE(sat) (V)
Collector to Emitter Saturation Voltage VCE(sat) (V)
Collector to Emitter Saturation Voltage vs. Gate to Emitter Voltage (Typical)
5 0 Collector current wave (Square wave)
4 3 2 1 0 1
Tj = 125°C, Tc = 90°C VCE = 300 V, VGE = 15 V Rg = 5 Ω, duty = 50% 10
100
1000
Frequency f (kHz)
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RJH60A83RDPE
Preliminary
Switching Characteristics (Typical) (1)
td(off) td(on) tr
10
VCC = 300 V, VGE = 15 V Rg = 5 Ω, Tc = 150°C
1
10 VCC = 300 V, VGE = 15 V Rg = 5 Ω, Tc = 150°C 1 Eon
Eoff
0.1
0.01 1
100
10
1
100
Collector Current IC (A) (Inductive load)
Switching Characteristics (Typical) (3)
Switching Characteristics (Typical) (4) 1
VCC = 300 V, VGE = 15 V IC = 10 A, Tc = 150°C
100
tf td(off) td(on) tr
Eon
Eoff 0.1
VCC = 300 V, VGE = 15 V IC = 10 A, Tc = 150°C
0.01
10 1
10
100
1
1000
Swithing Energy Losses E (mJ)
VCC = 300 V, VGE = 15 V IC = 10 A, Rg = 5 Ω
tf td(off) td(on)
10 25
tr 50
75
100
125
Case Temperature Tc (°C) (Inductive load)
R07DS0806EJ0200 Rev.2.00 Jul 12, 2012
100
Switching Characteristics (Typical) (6)
Switching Characteristics (Typical) (5)
100
10
Gate Resistance Rg (Ω) (Inductive load)
Gate Resistance Rg (Ω) (Inductive load)
Switching Times t (ns)
10
Collector Current IC (A) (Inductive load)
1000
Switching Times t (ns)
Swithing Energy Losses E (mJ)
tf 100
Swithing Energy Losses E (mJ)
Switching Times t (ns)
1000
Switching Characteristics (Typical) (2)
150
1
Eon
Eoff 0.1
VCC = 300 V, VGE = 15 V IC =10 A, Rg = 5 Ω 0.01 25
50
75
100
125
150
Case Temperature Tc (°C) (Inductive load)
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RJH60A83RDPE
Preliminary
Typical Capacitance vs. Collector to Emitter Voltage VGE = 0 V f = 1 MHz Ta = 25°C
1000
Cies 100
Coes
10
Cres 1 0
50
100
150
200
250
800
600
12
400
8
200
300
0
5
400
Tc = 150°C 25°C
0 80
120
160
Reverse Recovery Charge Qrr (μC)
Reverse Recovery Time trr (ns)
600
40
20
0 25
1.0 VCC = 300 V IF = 10 A 0.8 Tc = 150°C
0.6
0.4 25°C 0.2
0
200
0
Diode Current Slope diF/dt (A/μs)
40
80
120
160
200
Diode Current Slope diF /dt (A/μs)
Reverse Recovery Current vs. Diode Current Slope (Typical)
Forward Current vs. Forward Voltage (Typical) 40
20 VCC = 300 V IF = 10 A
Forward Current IF (A)
Reverse Recovery Current Irr (A)
15
Reverse Recovery Charge vs. Diode Current Slope (Typical)
VCC = 300 V IF = 10 A
0
10
Gate Charge Qg (nC)
Reverse Recovery Time vs. Diode Current Slope (Typical)
200
4
VCC = 300 V IC = 10 A Tc = 25°C
VCE 0
Collector to Emitter Voltage VCE (V)
800
16
VGE
Gate to Emitter Voltage VGE (V)
Capacitance C (pF)
10000
Collector to Emitter Voltage VCE (V)
Dynamic Input Characteristics (Typical)
16 Tc = 150°C
12
8
25°C
4
0
VGE = 0 V Pulse Test 30 Tc = 25°C 20
150°C
10
0 0
40
80
120
160
200
Diode Current Slope diF/dt (A/μs)
R07DS0806EJ0200 Rev.2.00 Jul 12, 2012
0
1
2
3
4
5
6
C-E Diode Forward Voltage VCEF (V)
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RJH60A83RDPE
Preliminary
Normalized Transient Thermal Impedance γs (t)
Normalized Transient Thermal Impedance vs. Pulse Width (IGBT) 3 Tc = 25°C
D=1
1 0.5
θj – c(t) = γs (t) • θj – c θj – c = 2.38°C/W, Tc = 25°C
0.2 0.1
0.3
0.05 0.02 0.01 1 shot pulse
PDM
D=
PW T
PW T 0.1 100 μ
1m
10 m
100 m
Pulse Width
1
10
100
PW (s)
Switching Time Test Circuit
Waveform
90%
VGE
Diode clamp
10%
L
IC D.U.T
90%
VCC
90%
Rg 10%
10% td(off)
tf
td(on)
tr
Waveform
Diode Reverse Recovery Time Test Circuit VCC
IF D.U.T IF
diF/dt
L
trr
0 Irr
Rg
R07DS0806EJ0200 Rev.2.00 Jul 12, 2012
0.5 Irr 0.9 Irr
Page 7 of 8
RJH60A83RDPE
Preliminary
Package Dimension JEITA Package Code SC-83
RENESAS Code PRSS0004AE-B
Previous Code LDPAK(S)-(1) / LDPAK(S)-(1)V
MASS[Typ.] 1.30g
7.8 6.6
(1.5)
10.0
2.49 ± 0.2 0.2 0.1 +– 0.1
7.8 7.0
1.3 ± 0.15
+ 0.3 – 0.5
8.6 ± 0.3
(1.5)
(1.4)
4.44 ± 0.2 10.2 ± 0.3
Unit: mm
1.7
Package Name LDPAK(S)-(1)
2.2
1.37 ± 0.2
2.54 ± 0.5
0.2 0.86 +– 0.1
2.54 ± 0.5
0.4 ± 0.1 0.3 3.0 +– 0.5
1.3 ± 0.2
Ordering Information Orderable Part No. RJH60A83RDPE-00#J3
R07DS0806EJ0200 Rev.2.00 Jul 12, 2012
Quantity 1000 pcs
Shipping Container Taping
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