Transcript
Preliminary Datasheet
RJH60D1DPP-E0 600V - 10A - IGBT Application: Inverter
R07DS0893EJ0100 Rev.1.00 Nov 01, 2012
Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25°C) Built in fast recovery diode (70 ns typ.) in one package Trench gate and thin wafer technology High speed switching tf = 75 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 10 A, Rg = 5 , inductive load)
Outline RENESAS Package code: PRSS0003AG-A (Package name: TO-220FP) C
1. Gate 2. Collector 3. Emitter
G
1
E
2 3
Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage / diode reverse voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Collector peak current Collector to emitter diode forward current Collector to emitter diode forward peak current Collector dissipation Junction to case thermal resistance (IGBT) Junction to case thermal resistance (Diode) Junction temperature Storage temperature
Symbol VCES / VR VGES IC IC ic(peak) Note1 iDF iD(peak) Note1 PC Note2 j-c Note2 j-cd Note2 Tj Tstg
Ratings 600 ±30 20 10 40 10 40 30 4.1 7.2 150 –55 to +150
Unit V V A A A A A W °C/ W °C/ W °C °C
Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tc = 25C
R07DS0893EJ0100 Rev.1.00 Nov 01, 2012
Page 1 of 9
RJH60D1DPP-E0
Preliminary
Electrical Characteristics (Ta = 25°C) Item Collector to emitter breakdown voltage
VBR(CES)
Min 600
Zero gate voltage collector current / Diode reverse current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage
ICES / IR
—
—
5
A
VCE = 600 V, VGE = 0
IGES VGE(off) VCE(sat) VCE(sat) Cies Coes Cres Qg Qge Qgc td(on) tr td(off)
— 4.0 — — — — — — — — — — —
— — 1.9 2.6 275 25 8 13 3 5 30 13 42
±1 6.0 2.5 — — — — — — — — — —
A V V V pF pF pF nC nC nC ns ns ns
VGE = ±30 V, VCE = 0 VCE = 10 V, IC = 1 mA IC = 10 A, VGE = 15 V Note3 IC = 20 A, VGE = 15 V Note3
tf Eon Eoff Etotal tsc
— — — — 3.0
75 0.10 0.13 0.23 5.0
— — — — —
ns mJ mJ mJ s
FRD forward voltage
VF
FRD reverse recovery time FRD reverse recovery charge FRD peak reverse recovery current
trr Qrr Irr
— — — —
1.4 70 0.11 3.5
1.9 — — —
V ns C A
Input capacitance Output capacitance Reveres transfer capacitance Total gate charge Gate to emitter charge Gate to collector charge Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Short circuit withstand time
Symbol
Typ —
Max —
Unit V
Test Conditions IC =10 A, VGE = 0
VCE = 25 V VGE = 0 f = 1 MHz VGE = 15 V VCE = 300 V IC = 10 A VCC = 300 V VGE = 15 V IC = 10 A Rg = 5 (Inductive load)
VGE 360 V, VGE = 15 V IF = 10 A Note3 IF = 10 A diF/dt = 100 A/s
Notes: 3. Pulse test.
R07DS0893EJ0100 Rev.1.00 Nov 01, 2012
Page 2 of 9
RJH60D1DPP-E0
Preliminary
Main Characteristics Collector Dissipation vs. Case Temperature
Maximum DC Collector Current vs. Case Temperature 30
Collector Current IC (A)
Collector Dissipation Pc (W)
40
30
20
10
0
25
50
75
15 10 5
0
100 125 150 175
25
50
75
100 125 150 175
Case Temperature Tc (°C)
Case Temperature Tc (°C)
Maximum Safe Operation Area
Turn-off SOA 60
PW 10
=
10
Collector Current IC (A)
100
μs
0
10 μs
Collector Current IC (A)
20
0
0
1
0.1
0.01 1
Tc = 25°C Single pulse
50 40 30 20 10 0
10
100
1000
0
200
400
600
800
Collector to Emitter Voltage VCE (V)
Collector to Emitter Voltage VCE (V)
IGBT Output Characteristics (Typical)
IGBT Output Characteristics (Typical) 40
40 18 V
Tc = 25°C Pulse Test 30
12 V
20
10 V
10
VGE = 8 V
0
18 V
Tc = 150°C Pulse Test
15 V
Collector Current IC (A)
Collector Current IC (A)
25
15 V 30 12 V 20 10 V 10
VGE = 8 V
0 0
1
2
3
4
5
Collector to Emitter Voltage VCE (V)
R07DS0893EJ0100 Rev.1.00 Nov 01, 2012
0
1
2
3
4
5
Collector to Emitter Voltage VCE (V)
Page 3 of 9
RJH60D1DPP-E0
Preliminary
Tc = 25°C Pulse Test
4
3 IC = 20 A 2
10 A 5A
1 4
8
12
16
20
5
4 IC = 20 A 3 10 A 2 Tc = 150°C Pulse Test 1 4
12
20
16
Typical Transfer Characteristics
Collector to Emitter Saturation Voltage vs. Case Temparature (Typical)
30 Tc = 25°C
150°C
20
10
0 0
4
8
12
16
20
4.0 VGE = 15 V Pulse Test
3.5
IC = 20 A 3.0 2.5 10 A 2.0 5A
1.5 1.0 −25
0
25
50
100 125 150
75
Case Temparature Tc (°C)
Gate to Emitter Voltage VGE (V) Gate to Emitter Cutoff Voltage vs. Case Temparature (Typical)
Frequency Characteristics (Typical)
10
5
Collector Current IC(RSM) (A)
Gate to Emitter Cutoff Voltage VGE(off) (V)
8
Gate to Emitter Voltage VGE (V)
VCE = 10 V Pulse Test
8 IC = 10 mA 6
4
1 mA
2 VCE = 10 V Pulse Test 0 −25
5A
Gate to Emitter Voltage VGE (V)
40
Collector Current IC (A)
Collector to Emitter Saturation Voltage VCE(sat) (V)
5
Collector to Emitter Saturation Voltage vs. Gate to Emitter Voltage (Typical)
Collector to Emitter Saturation Voltage VCE(sat) (V)
Collector to Emitter Saturation Voltage VCE(sat) (V)
Collector to Emitter Saturation Voltage vs. Gate to Emitter Voltage (Typical)
0
25
50
75
100 125 150
Case Temparature Tc (°C)
R07DS0893EJ0100 Rev.1.00 Nov 01, 2012
4
0 Collector current wave (Square wave)
3
2
1
0 1
Tj = 125°C, Tc = 90°C VCE = 400 V, VGE = 15 V Rg = 5 Ω, duty = 50% 10
100
1000
Frequency f (kHz)
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RJH60D1DPP-E0
Preliminary Switching Characteristics (Typical) (2)
Switching Characteristics (Typical) (1)
10
Swithing Energy Losses E (mJ)
Switching Times t (ns)
1000
tf 100 td(off) td(on) 10
1 1
tr VCC = 300 V, VGE = 15 V Rg = 5 Ω, Tc = 150°C 10
Eon 1 Eoff
0.1
0.01 1
100
100
Switching Characteristics (Typical) (4)
Switching Characteristics (Typical) (3) 1000
1
Swithing Energy Losses E (mJ)
Switching Time t (ns)
10
Collector Current IC (A) (Inductive load)
Collector Current IC (A) (Inductive load)
VCC = 300 V, VGE = 15 V IC = 10 A, Tc = 150°C
tf 100 td(off) td(on) tr 10 1
10
Eon Eoff 0.1
VCC = 300 V, VGE = 15 V IC = 10 A, Tc = 150 °C 0.01 1
100
1000
1
Swithing Energy Losses E (mJ)
VCC = 300 V, VGE = 15 V IC = 10 A, Rg = 5 Ω
tf td(off) td(on) tr
10 25
50
75
100
125
Case Temperature Tc (°C) (Inductive load)
R07DS0893EJ0100 Rev.1.00 Nov 01, 2012
100
Switching Characteristics (Typical) (6)
Switching Characteristics (Typical) (5)
100
10
Gate Registance Rg (Ω) (Inductive load)
Gate Resistance Rg (Ω) (Inductive load)
Switching Times t (ns)
VCC = 300 V, VGE = 15 V Rg = 5 Ω, Tc = 150°C
150
Eon Eoff
0.1
VCC = 300 V, VGE = 15 V IC =10 A, Rg = 5 Ω 0.01 25
50
75
100
125
150
Case Temperature Tc (°C) (Inductive load)
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RJH60D1DPP-E0
Preliminary
Typical Capacitance vs. Collector to Emitter Voltage Tc = 25°C
Capacitance C (pF)
Cies
100
Coes
10
Cres VGE = 0 V f = 1 MHz 1 0
50
100
150
200
250
800
12
400
8 VCE
200
4
0
200
Tc = 150°C
100 50 25°C 0 80
120
160
12
16
0.5 VCC = 300 V IF = 10 A 0.4
0.3
0.2
Tc = 150°C
0.1 25°C 0
200
0
40
80
120
160
200
Diode Current Slope diF/dt (A/μs)
Diode Current Slope diF/dt (A/μs)
Reverse Recovery Current vs. Diode Current Slope (Typical)
Forward Current vs. Forward Voltage (Typical) 40
16 VCC = 300 V IF = 10 A
Forward Current IF (A)
Reverse Recovery Current Irr (A)
8
Gate Charge Qg (nc)
Reverse Recovery Charge Qrr (μC)
Reverse Recovery Time trr (ns)
VCC = 300 V IF = 10 A
40
4
Reverse Recovery Charge vs. Diode Current Slope (Typical)
300
0
0 20
0
300
Reverse Recovery Time vs. Diode Current Slope (Typical)
150
VGE
600
Collector to Emitter Voltage VCE (V)
250
16
VCC = 300 V IC = 10 A Tc = 25°C
Gate to Emitter Voltage VGE (V)
1000
Collector to Emitter Voltage VCE (V)
Dynamic Input Characteristics (Typical)
12
8 Tc = 150°C 4
Tc = 25°C 30 150°C
20
10 VCE = 0 V Pulse Test
25°C 0
0 0
40
80
120
160
200
Diode Current Slope diF/dt (A/μs)
R07DS0893EJ0100 Rev.1.00 Nov 01, 2012
0
1
2
3
4
C-E Diode Forward Voltage VCEF (V)
Page 6 of 9
Preliminary
Normalized Transient Thermal Impedance γs (t)
RJH60D1DPP-E0 Normalized Transient Thermal Impedance vs. Pulse Width (IGBT) 10 Tc = 25°C
1
D=1 0.5 0.2
θj – c(t) = γs (t) • θj – c θj – c = 4.1°C/W, Tc = 25°C
0.1 0.0
5
0.1 PDM
0.02 0.01 1 shot pulse
0.01 100 μ
1m
D=
PW T
PW T 10 m
100 m
Pulse Width
1
10
100
PW (s)
Normalized Transient Thermal Impedance γs (t)
Normalized Transient Thermal Impedance vs. Pulse Width (Diode) 10 Tc = 25°C
1
D=1 0.5
θj – c(t) = γs (t) • θj – c θj – c = 7.2°C/W, Tc = 25°C
0.2 0.1 5 0.1 0.0
PDM
D=
0.02 0.01 1 shot pulse
0.01 100 μ
R07DS0893EJ0100 Rev.1.00 Nov 01, 2012
1m
PW T
PW T 10 m
100 m
Pulse Width
1
10
100
PW (s)
Page 7 of 9
RJH60D1DPP-E0
Preliminary
Switching Time Test Circuit
Waveform
90%
VGE
Diode clamp
10%
L
IC D.U.T
90%
VCC
90%
Rg 10%
10% td(off)
Diode Reverse Recovery Time Test Circuit
tf
td(on)
tr
Waveform
VCC
IF D.U.T IF
diF/dt
L
trr
0 Irr
Rg
R07DS0893EJ0100 Rev.1.00 Nov 01, 2012
0.5 Irr 0.9 Irr
Page 8 of 9
RJH60D1DPP-E0
Preliminary
Package Dimension Package Name TO-220FP
JEITA Package Code
RENESAS Code PRSS0003AG-A
Previous Code
MASS[Typ.] 1.9g
10.16 ± 0.20
2.54 ± 0.20
6.68 ± 0.20
3.3 ± 0.2
1.28 ± 0.30
3.18 ± 0.20
15.87 ± 0.20
3.18 ± 0.10
12.98 ± 0.30
Unit: mm
Max 1.47
2.76 ± 0.20 0.80 ± 0.20 0.50
4.7 ± 0.2
5.08 ± 0.20
Ordering Information Orderable Part Number RJH60D1DPP-E0#T2
R07DS0893EJ0100 Rev.1.00 Nov 01, 2012
Quantity 1000 pcs
Shipping Container Box (Tube)
Page 9 of 9
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