Transcript
Preliminary Datasheet
RJH60D3DPP-M0 600V - 17A - IGBT Application: Inverter
R07DS0162EJ0400 Rev.4.00 Apr 19, 2012
Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25°C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer technology High speed switching tf = 70 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 17 A, Rg = 5 , Ta = 25°C)
Outline RENESAS Package code: PRSS0003AF-A (Package name: TO-220FL) C
1. Gate 2. Collector 3. Emitter
G
1
2 3
E
Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage / diode reverse voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Collector peak current Collector to emitter diode forward current Collector to emitter diode forward peak current Collector dissipation Junction to case thermal resistance (IGBT) Junction to case thermal resistance (Diode) Junction temperature Storage temperature
Symbol VCES / VR VGES IC IC ic(peak) Note1 iDF iDF(peak) Note1 PC Note2 j-c Note2 j-cd Note2 Tj Tstg
Ratings 600 ±30 35 17 70 17 70 40 3.15 4.9 150 –55 to +150
Unit V V A A A A A W °C/ W °C/ W °C °C
Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tc = 25C
R07DS0162EJ0400 Rev.4.00 Apr 19, 2012
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RJH60D3DPP-M0
Preliminary
Electrical Characteristics (Ta = 25°C) Item
Symbol
Collector to emitter breakdown voltage Zero gate voltage collector current / Diode reverse current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage Input capacitance Output capacitance Reveres transfer capacitance Total gate charge Gate to emitter charge Gate to collector charge Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Short circuit withstand time FRD Forward voltage FRD reverse recovery time FRD reverse recovery charge FRD peak reverse recovery current
VBR(CES)
Min 600
Typ —
Max —
Unit V
Test Conditions IC =10 A, VGE = 0
ICES / IR
—
—
5
A
VCE = 600 V, VGE = 0
IGES VGE(off) VCE(sat) VCE(sat) Cies Coes Cres Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Etotal tsc
— 4.0 — — — — — — — — — — — — — — — 3.0
— — 1.6 2.0 900 60 25 37 6.5 15 35 16 80 70 0.20 0.21 0.41 5.0
±1 6.0 2.2 — — — — — — — — — — — — — — —
A V V V pF pF pF nC nC nC ns ns ns ns mJ mJ mJ s
VGE = ±30 V, VCE = 0 VCE = 10 V, IC = 1 mA IC = 17 A, VGE = 15 V Note3 IC = 35 A, VGE = 15 V Note3
VF trr Qrr Irr
— — — —
1.3 100 0.15 4.2
1.7 — — —
V ns C A
IF = 17 A Note3
VCE = 25 V VGE = 0 f = 1 MHz VGE = 15 V VCE = 300 V IC = 17 A VCC = 300 V VGE = 15 V IC = 17 A Rg = 5 Inductive load
VCC 360 V, VGE = 15 V
IF = 17 A diF/dt = 100 A/s
Notes: 3. Pulse test.
R07DS0162EJ0400 Rev.4.00 Apr 19, 2012
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RJH60D3DPP-M0
Preliminary
Main Characteristics Power Dissipation vs. Case Temperature
Maximum DC Collector Current vs. Case Temperature 40
Collector Current IC (A)
Collector Dissipation Pc (W)
50
40
30
20
10
0
25
50
75
10
0
100 125 150 175
25
50
75
100 125 150 175
Case Temperature Tc (°C)
Case Temperature Tc (°C)
Maximum Safe Operation Area
Turn-off SOA 80
100
PW 10
0
μs
=
10
Collector Current IC (A)
1000
Collector Current IC (A)
20
0
0
μs
10
1
0.1 1
60
40
20
Tc = 25°C Single pulse 0 10
100
1000
0
200
400
600
800
Collector to Emitter Voltage VCE (V)
Collector to Emitter Voltage VCE (V)
IGBT Output Characteristics (Typical)
IGBT Output Characteristics (Typical) 70
70 15 V
60
12 V
18 V
Collector Current IC (A)
Collector Current IC (A)
30
10 V
50 40 30 20
VGE = 8 V
10
Tc = 25°C Pulse Test
12 V
60
15 V 18 V
50
10 V 40 30 20
VGE = 8 V
10
Tc = 150°C Pulse Test
0
0 0
1
2
3
4
5
Collector to Emitter Voltage VCE (V)
R07DS0162EJ0400 Rev.4.00 Apr 19, 2012
0
1
2
3
4
5
Collector to Emitter Voltage VCE (V)
Page 3 of 9
Collector to Emitter Satularion Voltage vs. Gate to Emitter Voltage (Typical) 5 Tc = 25°C Pulse Test 4 IC = 17 A 35 A
3
2
1
4
8
16
12
20
Collector to Emitter Satularion Voltage vs. Gate to Emitter Voltage (Typical) 6 Tc = 150°C Pulse Test 5 IC = 17 A
4
35 A 3
2
1 4
12
20
16
Gate to Emitter Voltage VGE (V)
Transfer Characteristics (Typical)
Collector to Emitter Saturation Voltage vs. Case Temparature (Typical)
60 Tc = 25°C
50
150°C 40 30 20 10
VCE = 10 V Pulse Test
0 0
4
8
12
16
20
2.8 VGE = 15 V Pulse Test 2.4 IC = 35 A 2.0 17 A 1.6
8.5 A
1.2 −25
Gate to Emitter Voltage VGE (V) Gate to Emitter Cutoff Voltage vs. Case Temparature (Typical)
25
50
75
100 125 150
Frequency Characteristics (Typical)
10
10
8 IC = 10 mA
6
4 1 mA 2 VCE = 10 V Pulse Test 0 −25
0
Case Temparature Tc (°C)
Collector Current IC(RSM) (A)
Gate to Emitter Cutoff Voltage VGE(off) (V)
8
Gate to Emitter Voltage VGE (V)
70
Collector Current IC (A)
Collector to Emitter Satularion Voltage VCE(sat) (V)
Preliminary
Collector to Emitter Saturation Voltage VCE(sat) (V)
Collector to Emitter Satularion Voltage VCE(sat) (V)
RJH60D3DPP-M0
0
25
50
75
100 125 150
Case Temparature Tc (°C)
R07DS0162EJ0400 Rev.4.00 Apr 19, 2012
8
0 Collector current wave (Square wave)
6
4
2
0 1
Tj = 125°C Tc = 90°C VCE = 400 V VGE = 15 V Rg = 5 Ω duty = 50% 10
100
1000
Frequency f (kHz)
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RJH60D3DPP-M0
Preliminary
Switching Characteristics (Typical) (1)
10
Swithing Energy Losses E (mJ)
tf td(off)
100
td(on) 10
tr VCC = 300 V, VGE = 15 V Rg = 5 Ω, Tc = 150°C
1
VCC = 300 V, VGE = 15 V Rg = 5 Ω, Tc = 150°C 1
0.1
Eoff
Eon 0.01
1
100
10
1
100
Collector Current IC (A) (Inductive load)
Switching Characteristics (Typical) (3)
Switching Characteristics (Typical) (4) 1
1000
VCC = 300 V, VGE = 15 V IC = 17 A, Tc = 150°C
tf 100
td(off) td(on) tr
Eoff Eon 0.1
VCC = 300 V, VGE = 15 V IC = 17 A, Tc = 25°C
0.01
10 1
10
100
1
1000
Swithing Energy Losses E (mJ)
VCC = 300 V, VGE = 15 V IC = 17 A, Rg = 5 Ω
tf 100 td(off) td(on) tr 50
75
100
125
Case Temperature Tc (°C) (Inductive load)
R07DS0162EJ0400 Rev.4.00 Apr 19, 2012
100
Switching Characteristics (Typical) (6)
Switching Characteristics (Typical) (5)
10 25
10
Gate Registance Rg (Ω) (Inductive load)
Gate Registance Rg (Ω) (Inductive load)
Switching Times t (ns)
10
Collector Current IC (A) (Inductive load)
Swithing Energy Losses E (mJ)
Switching Times t (ns)
1000
Switching Times t (ns)
Switching Characteristics (Typical) (2)
150
1
Eoff Eon 0.1
VCC = 300 V, VGE = 15 V IC =17 A, Rg = 5 Ω 0.01 25
50
75
100
125
150
Case Temperature Tc (°C) (Inductive load)
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RJH60D3DPP-M0
Preliminary
Typical Capacitance vs. Collector to Emitter Voltage
Cies
1000
100 Coes Cres
10 VGE = 0 V f = 1 MHz Tc = 25°C
1 0
50
100
150
200
250
800
VCC = 300 V IC = 17 A Tc = 25°C
600
8
200
4 VCE
0
300
0
Tc = 150°C
100 25°C
0 0
40
80
120
160
Reverse Recovery Charge Qrr (μC)
Reverse Recovery Time trr (ns)
200
50
1.0
24
0 40
32
VCC = 300 V IF = 17 A
0.8
0.6 Tc = 150°C 0.4
0.2 25°C 0
200
0
Diode Current Slope diF/dt (A/μs)
40
80
120
160
200
Diode Current Slope diF/dt (A/μs)
Reverse Recovery Current vs. Diode Current Slope (Typical)
Forward Current vs. Forward Voltage (Typical)
16
70 VCC = 300 V IF = 17 A
Forward Current IF (A)
Reverse Recovery Current Irr (A)
16
Reverse Recovery Charge vs. Diode Current Slope (Typical)
VCC = 300 V IF = 17 A
150
8
Gate Charge Qg (nc)
Reverse Recovery Time vs. Diode Current Slope (Typical)
250
12
400
Collector to Emitter Voltage VCE (V)
300
16
VGE
Gate to Emitter Voltage VGE (V)
Capacitance C (pF)
10000
Collector to Emitter Voltage VCE (V)
Dynamic Input Characteristics (Typical)
12
8
Tc = 150°C
4
25°C
0
60 50 Tc = 25°C
150°C
40 30 20 10
VGE = 0 V Pulse Test
0 0
40
80
120
160
200
Diode Current Slope diF/dt (A/μs)
R07DS0162EJ0400 Rev.4.00 Apr 19, 2012
0
1
2
3
4
C-E Diode Forward Voltage VCEF (V)
Page 6 of 9
Preliminary
Normalized Transient Thermal Impedance γs (t)
RJH60D3DPP-M0 Normalized Transient Thermal Impedance vs. Pulse Width (IGBT) 10 Tc = 25°C
1
D=1 0.5
0.1
θj – c(t) = γs (t) • θj – c θj – c = 3.15°C/W, Tc = 25°C
0.05 2 0.0
PDM
0.2
0.1
D= PW T
0.01 1 shot pulse
0.01 100 μ
1m
PW T
10 m
100 m
Pulse Width
1
10
100
PW (s)
Normalized Transient Thermal Impedance γs (t)
Normalized Transient Thermal Impedance vs. Pulse Width (Diode) 10 Tc = 25°C
1
D=1 0.5 0.2
θj – c(t) = γs (t) • θj – c θj – c = 4.9°C/W, Tc = 25°C
0.1 0.05
0.1 PDM
0.02 0.01 1 shot pulse
0.01 100 μ
R07DS0162EJ0400 Rev.4.00 Apr 19, 2012
1m
D=
PW T
PW T 10 m
100 m
Pulse Width
1
10
100
PW (s)
Page 7 of 9
RJH60D3DPP-M0
Preliminary
Switching Time Test Circuit
Waveform
90%
VGE
Diode clamp
10%
L
IC D.U.T
90%
VCC
90%
Rg 10%
10% td(off)
Diode Reverse Recovery Time Test Circuit
tf
td(on)
tr
Waveform
VCC
IF D.U.T IF
diF/dt
L
trr
0 Irr
Rg
R07DS0162EJ0400 Rev.4.00 Apr 19, 2012
0.5 Irr 0.9 Irr
Page 8 of 9
RJH60D3DPP-M0
Preliminary
Package Dimension Package Name TO-220FL
JEITA Package Code ⎯
Previous Code TO-220FL
RENESAS Code PRSS0003AF-A
Unit: mm
6.5 ± 0.3
3.0 ± 0.3
2.8 ± 0.2
φ 3.2 ± 0.2
3.6 ± 0.3
12.5 ± 0.5
15.0 ± 0.3
10.0 ± 0.3
MASS[Typ.] 1.5g
1.15 ± 0.2 1.15 ± 0.2
0.75 ± 0.15 0.40 ± 0.15
4.5 ± 0.2
2.54 ± 0.25
2.6 ± 0.2
2.54 ± 0.25
Ordering Information Orderable Part No. RJH60D3DPP-M0#T2
R07DS0162EJ0400 Rev.4.00 Apr 19, 2012
Quantity 600 pcs
Shipping Container Box (Tube)
Page 9 of 9
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