Transcript
Datasheet
RJH60M0DPQ-E0 R07DS1085EJ0200 Rev.2.00 Jun 13, 2013
600V - 22A - IGBT Application: Inverter Features • Short circuit withstand time (8 μs typ.) • Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C) • Built in fast recovery diode (100 ns typ.) in one package • Trench gate and thin wafer technology • High speed switching tf = 55 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 22 A, Rg = 5 Ω, Ta = 25°C, inductive load)
Outline RENESAS Package code: PRSS0003ZE-A (Package name: TO-247) C
4
1. Gate 2. Collector 3. Emitter 4. Collector
G
1 2
E
3
Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage / diode reverse voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Collector peak current Collector to emitter diode forward current Collector to emitter diode forward peak current Collector dissipation Junction to case thermal resistance (IGBT) Junction to case thermal resistance (Diode) Junction temperature Storage temperature
Symbol VCES / VR VGES IC IC IC(peak) Note1 IDF IDF(peak) Note1 PC Note2 θj-c Note2 θj-cd Note2 Tj Tstg
Ratings 600 ±30 45 22 66 22 66 116.8 1.07 2.3 150 –55 to +150
Unit V V A A A A A W °C/W °C/W °C °C
Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2. Value at Tc = 25°C
R07DS1085EJ0200 Rev.2.00 Jun 13, 2013
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RJH60M0DPQ-E0
Electrical Characteristics (Ta = 25°C) Item
Symbol ICES / IR
Min —
Typ —
Max 5
Unit μA
IGES VGE(off) VCE(sat) VCE(sat) Cies Coes Cres Qg Qge Qgc td(on) tr td(off) tf Eon
— 5 — — — — — — — — — — — — —
— — 1.8 2.4 1050 75 45 65 10 39 40 25 90 55 0.48
±1 7 2.3 — — — — — — — — — — — —
μA V V V pF pF pF nC nC nC ns ns ns ns mJ
Eoff Etotal tsc
— — 6
0.38 0.86 8
— — —
mJ mJ μs
FRD Forward voltage
VF
FRD reverse recovery time FRD reverse recovery charge FRD peak reverse recovery current
trr Qrr Irr
— — — —
1.4 100 0.14 4.4
1.9 — — —
V ns μC A
Zero gate voltage collector current / Diode reverse current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to emitter charge Gate to collector charge Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Short circuit withstand time
Test Conditions VCE = 600 V, VGE = 0 VGE = ±30 V, VCE = 0 VCE = 10 V, IC = 1 mA IC = 22 A, VGE = 15 V Note3 IC = 45 A, VGE = 15 V Note3 VCE = 25 V VGE = 0 f = 1 MHz VGE = 15 V VCE = 300 V IC = 22 A VCC = 300 V VGE = 15 V IC = 22 A Rg = 5 Ω Inductive load
Tc = 100 °C VCC ≤ 360 V, VGE = 15 V IF = 22 A Note3 IF = 22 A diF/dt = 100 A/μs
Notes: 3. Pulse test.
R07DS1085EJ0200 Rev.2.00 Jun 13, 2013
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RJH60M0DPQ-E0
Main Characteristics Collector Dissipation vs. Case Temperature
Maximum DC Collector Current vs. Case Temperature 50
Collector Current IC (A)
Collector Dissipation Pc (W)
160
120
80
40
0 25
50
75
20
10
100 125 150 175
0
25
50
75
100 125 150 175
Case Temperature Tc (°C)
Case Temperature Tc (°C)
Maximum Safe Operation Area
Turn-off SOA
1000
100
PW 10
10
0µ
=1
s
0µ
Collector Current IC (A)
100
s
1
0.1
0.01 1
80
60
40
20
Tc = 25°C Single pulse 0 10
100
1000
0
200
400
600
800
Collector to Emitter Voltage VCE (V)
Collector to Emitter Voltage VCE (V)
Typical Output Characteristics
Typical Output Characteristics
70
70
Tc = 25°C Pulse Test
60
15 V
18 V
50
Collector Current IC (A)
Collector Current IC (A)
30
0 0
Collector Current IC (A)
40
12 V
40 30 10 V
20 10
Tc = 150°C Pulse Test
60
15 V 50
18 V
12 V
40 30 10 V 20 10
VGE = 8 V
VGE = 8 V 0
0 0
1
2
3
4
5
Collector to Emitter Voltage VCE (V)
R07DS1085EJ0200 Rev.2.00 Jun 13, 2013
0
1
2
3
4
5
Collector to Emitter Voltage VCE (V)
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RJH60M0DPQ-E0
Collector to Emitter Saturation Voltage VCE(sat) (V)
5 Tc = 25°C Pulse Test 4
3 IC = 45 A 2
22 A 11 A
1 8
10
12
14
16
18
5 Tc = 150°C Pulse Test 4
IC = 45 A
3
22 A
2
11 A 1
20
8
14
16
18
20
Typical Transfer Characteristics
Collector to Emitter Saturation Voltage vs. Junction Temparature (Typical)
Ta = 25°C
150°C
50 40 30 20
VCE = 10 V Pulse Test
10 0 0
4
8
12
16
20
5 VGE = 15 V Pulse Test
4
IC = 45 A
3
22 A 2
11 A
1
0 −25
0
25
50
75
100 125 150
Junction Temparature Tj (°C)
Gate to Emitter Voltage VGE (V) Gate to Emitter Cutoff Voltage vs. Junction Temparature (Typical)
Frequency Characteristics (Typical) 20
10
Collector Current IC(RMS) (A)
Gate to Emitter Cutoff Voltage VGE(off) (V)
12
Gate to Emitter Voltage VGE (V)
60
8 IC = 10 mA 6 1 mA
4
2 VCE = 10 V Pulse Test 0 −25
10
Gate to Emitter Voltage VGE (V)
70
Collector Current IC (A)
Collector to Emitter Saturation Voltage vs. Gate to Emitter Voltage (Typical)
Collector to Emitter Saturation Voltage VCE(sat) (V)
Collector to Emitter Saturation Voltage VCE(sat) (V)
Collector to Emitter Saturation Voltage vs. Gate to Emitter Voltage (Typical)
0
25
50
75
100 125 150
Junction Temparature Tj (°C)
R07DS1085EJ0200 Rev.2.00 Jun 13, 2013
16
0 Collector current wave (Square wave)
12
Tj = 125°C Tc = 90°C VCE = 400 V VGE = 15 V Rg = 5 Ω duty = 50%
8
4
0 1
10
100
1000
Frequency f (kHz)
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RJH60M0DPQ-E0 Switching Characteristics (Typical) (1)
Switching Characteristics (Typical) (2) 100
Swithing Energy Losses E (mJ)
Switching Times t (ns)
1000
tf 100 td(off) td(on) 10
tr VCC = 300 V, VGE = 15 V Rg = 5 Ω, Tc = 150°C
1 1
VCC = 300 V, VGE = 15 V Rg = 5 Ω, Tc = 150°C 10
Eon
Eoff
1
0.1
0.01
10
1
100
Switching Characteristics (Typical) (4)
Switching Characteristics (Typical) (3) Swithing Energy Losses E (mJ)
Switching Time t (ns)
1000
tf td(off) td(on) tr
10 VCC = 300 V, VGE = 15 V IC = 22 A, Tc = 150°C 1
10
Eoff
1
Eon
0.1 VCC = 300 V, VGE = 15 V IC = 22 A, Tc = 150°C 0.01
1
10
1
100
tf td(off)
tr 10
1 25
VCC = 300 V, VGE = 15 V IC = 22 A, Rg = 5 Ω 50
75
100
125
150
Junction Temperature Tj (°C) (Inductive load)
R07DS1085EJ0200 Rev.2.00 Jun 13, 2013
Swithing Energy Losses E (mJ)
1000
td(on)
100
Switching Characteristics (Typical) (6)
Switching Characteristics (Typical) (5)
100
10
Gate Registance Rg (Ω) (Inductive load)
Gate Resistance Rg (Ω) (Inductive load)
Switching Times t (ns)
100
Collector Current IC (A) (Inductive load)
Collector Current IC (A) (Inductive load)
100
10
10
1
Eoff Eon
0.1
0.01 25
VCC = 300 V, VGE = 15 V IC = 22 A, Rg = 5 Ω 50
75
100
125
150
Junction Temperature Tj (°C) (Inductive load)
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RJH60M0DPQ-E0 Typical Capacitance vs. Collector to Emitter Voltage VGE = 0 V f = 1 MHz Tc = 25°C Cies
1000
100 Coes Cres 10 0
50
100
150
200
250
800
600
12
400
8
200
0
300
0
Reverse Recovery Charge Qrr (μC)
Reverse Recovery Time trr (ns)
VCC = 300 V IF = 22 A 160 Tc = 150°C 120
25°C
40
0 80
120
160
60
0 80
1.0 VCC = 300 V IF = 22 A 0.8
0.6
Tc = 150°C
0.4
0.2 25°C 0
200
0
40
80
120
160
200
Diode Current Slope diF/dt (A/μs)
Diode Current Slope diF/dt (A/μs)
Reverse Recovery Current vs. Diode Current Slope (Typical)
Forward Current vs. Forward Voltage (Typical)
16
70 VCC = 300 V IF = 22 A
Forward Current IF (A)
Reverse Recovery Current Irr (A)
40
Reverse Recovery Charge vs. Diode Current Slope (Typical)
200
40
20
Gate Charge Qg (nC)
Reverse Recovery Time vs. Diode Current Slope (Typical)
0
4
VCC = 300 V IC = 22 A Tc = 25°C
VCE
Collector to Emitter Voltage VCE (V)
80
16
VGE
Gate to Emitter Voltage VGE (V)
Capacitance C (pF)
10000
Collector to Emitter Voltage VCE (V)
Dynamic Input Characteristics (Typical)
12
Tc = 150°C
8
4 25°C 0
60
VCE = 0 V Pulse Test
50 40 30 20
Tc = 150°C 25°C
10 0
0
40
80
120
160
200
Diode Current Slope diF/dt (A/μs)
R07DS1085EJ0200 Rev.2.00 Jun 13, 2013
0
0.4
0.8
1.2
1.6
2.0
C-E Diode Forward Voltage VCEF (V)
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Normalized Transient Thermal Impedance γs (t)
RJH60M0DPQ-E0
Normalized Transient Thermal Impedance vs. Pulse Width (IGBT) 10 Tc = 25°C
1
D=1 0.5 0.2
θj – c(t) = γs (t) • θj – c θj – c = 1.07°C/W, Tc = 25°C
0.1
0.1
0.05 0.02 0.01 1 shot pulse
PDM
D=
PW T
PW T 0.01 100 μ
1m
10 m
100 m
Pulse Width
1
10
100
PW (s)
Normalized Transient Thermal Impedance γs (t)
Normalized Transient Thermal Impedance vs. Pulse Width (Diode) 10 Tc = 25°C
1
D=1 0.5 0.2
θj – c(t) = γs (t) • θj – c θj – c = 2.3°C/W, Tc = 25°C
0.1 0.0
5
0.1 PDM
0.02 0.01 1 shot pulse
0.01 100 μ
R07DS1085EJ0200 Rev.2.00 Jun 13, 2013
1m
D=
PW T
PW T 10 m
100 m
Pulse Width
1
10
100
PW (s)
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RJH60M0DPQ-E0 Switching Time Test Circuit
Waveform
90%
VGE
Diode clamp
10%
L
IC D.U.T
90%
VCC
90%
Rg 10%
10% td(off)
tf
td(on)
tr
Waveform
Diode Reverse Recovery Time Test Circuit VCC
IF D.U.T IF
diF/dt
L
trr
0 Irr
Rg
R07DS1085EJ0200 Rev.2.00 Jun 13, 2013
0.5 Irr 0.9 Irr
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RJH60M0DPQ-E0
Package Dimension JEITA Package Code ⎯
RENESAS Code PRSS0003ZE-A
Previous Code ⎯
MASS[Typ.] 6.0g
Unit: mm
φ3.60 ± 0.1
5.02 ± 0.19
15.94 ± 0.19
17.63 4.5 max
20.19 ± 0.38
21.13 ± 0.33
6.15
Package Name TO-247
5.45
0.1 2.10 +– 0.2
13.26
1.27 ± 0.13
5.45
0.71 ± 0.1
2.41
Ordering Information Orderable Part No. RJH60M0DPQ-E0#T2
R07DS1085EJ0200 Rev.2.00 Jun 13, 2013
Quantity 450 pcs
Shipping Container Tube
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