Transcript
Preliminary Datasheet
RJH60M1DPE 600V - 8A - IGBT Application: Inverter
R07DS0529EJ0300 Rev.3.00 May 25, 2012
Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 8 A, VGE = 15 V, Ta = 25°C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer technology High speed switching tf = 70 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 8 A, Rg = 5 , inductive load)
Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) ) C 4
1. Gate 2. Collector 3. Emitter 4. Collector
G 1
2
3 E
Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage / diode reverse voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Collector peak current Collector to emitter diode forward current Collector to emitter diode forward peak current Collector dissipation Junction to case thermal resistance (IGBT) Junction to case thermal resistance (Diode) Junction temperature Storage temperature
Symbol VCES / VR VGES IC IC ic(peak) Note1 iDF iDF(peak) Note1 PC Note2 j-c Note2 j-cd Note2 Tj Tstg
Ratings 600 ±30 16 8 20 8 32 52 2.38 2.8 150 –55 to +150
Unit V V A A A A A W °C/ W °C/ W °C °C
Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tc = 25C
R07DS0529EJ0300 Rev.3.00 May 25, 2012
Page 1 of 9
RJH60M1DPE
Preliminary
Electrical Characteristics (Ta = 25°C) Item Collector to emitter breakdown voltage
V(BR)CES
Min 600
Zero gate voltage collector current / Diode reverse current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage
ICES / IR
—
—
5
A
VCE = 600 V, VGE = 0
IGES VGE(off) VCE(sat) VCE(sat) Cies Coes Cres Qg Qge Qgc td(on) tr td(off)
— 5 — — — — — — — — — — —
— — 1.9 2.8 275 25 10 20.5 3 11.5 30 12 55
±1 7 2.4 — — — — — — — — — —
A V V V pF pF pF nC nC nC ns ns ns
VGE = ±30 V, VCE = 0 VCE = 10 V, IC = 1 mA IC = 8 A, VGE = 15 V Note3 IC =16 A, VGE = 15 V Note3
tf Eon Eoff Etotal tsc
— — — — 6
70 0.08 0.09 0.17 8
— — — — —
ns mJ mJ mJ s
FRD Forward voltage
VF
FRD reverse recovery time FRD reverse recovery charge FRD peak reverse recovery current
trr Qrr Irr
— — — —
1.1 100 0.18 4.7
1.5 — — —
V ns C A
Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to emitter charge Gate to collector charge Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Short circuit withstand time
Symbol
Typ —
Max —
Unit V
Test Conditions IC =10 A, VGE = 0
VCE = 25 V VGE = 0 f = 1 MHz VGE = 15 V VCE = 300 V IC = 8 A VCC = 300 V VGE = 15 V IC = 8 A Rg = 5 (Inductive load)
Tc = 100 C VGE 360 V, VGE = 15 V IF = 8 A Note3 IF = 8 A diF/dt = 100 A/s
Notes: 3. Pulse test.
R07DS0529EJ0300 Rev.3.00 May 25, 2012
Page 2 of 9
RJH60M1DPE
Preliminary
Main Characteristics Collector Dissipation vs. Case Temperature
Maximum DC Collector Current vs. Case Temperature 20
50
Collector Current IC (A)
Collector Dissipation Pc (W)
60
40 30 20 10 0 25
50
75
8
4
100 125 150 175
0
25
50
75
100 125 150 175
Case Temperature Tc (°C)
Case Temperature Tc (°C)
Maximum Safe Operation Area
Turn-off SOA
100
PW 10
10
0μ
=
s
10
Collector Current IC (A)
25
μs
1
0.1
0.01 1
20
15
10
5
Tc = 25°C Single pulse
0 10
100
0
1000
200
400
600
800
Collector to Emitter Voltage VCE (V)
Collector to Emitter Voltage VCE (V)
Typical Output Characteristics
Typical Output Characteristics
20
20
Tc = 25°C Pulse Test
16
15 V
Collector Current IC (A)
Collector Current IC (A)
12
0 0
Collector Current IC (A)
16
18 V 12 V
12
8 10 V 4
Tc = 150°C Pulse Test
16
15 V 18 V
12 V
12
8 10 V 4 VGE = 8 V
VGE = 8 V 0
0 0
1
2
3
4
5
Collector to Emitter Voltage VCE (V)
R07DS0529EJ0300 Rev.3.00 May 25, 2012
0
1
2
3
4
5
Collector to Emitter Voltage VCE (V)
Page 3 of 9
RJH60M1DPE
Preliminary
Collector to Emitter Saturation Voltage VCE(sat) (V)
5
4
3 IC = 16 A 2
8A Tc = 25°C Pulse Test
1 8
10
12
14
16
18
5
4 IC = 16 A 3 8A 2 Tc = 150°C Pulse Test 1 8
20
14
16
18
20
Typical Transfer Characteristics
Collector to Emitter Saturation Voltage vs. Junction Temparature (Typical)
16
25°C 12
8
4 VCE = 10 V Pulse Test 0 0
4
8
12
16
20
5 VGE = 15 V Pulse Test
4
IC = 16 A
3 8A 2 3A 1
0 −25
0
25
50
75
100 125 150
Junction Temparature Tj (°C)
Gate to Emitter Voltage VGE (V) Gate to Emitter Cutoff Voltage vs. Junction Temparature (Typical)
Frequency Characteristics (Typical)
10
6
8
IC = 10 mA
6 1 mA
4
2 VCE = 10 V Pulse Test 0
25
50
75
100 125 150
Junction Temparature Tj (°C)
R07DS0529EJ0300 Rev.3.00 May 25, 2012
Collector Current IC(RMS) (A)
Gate to Emitter Cutoff Voltage VGE(off) (V)
12
Gate to Emitter Voltage VGE (V)
Ta = 150°C
0 −25
10
Gate to Emitter Voltage VGE (V)
20
Collector Current IC (A)
Collector to Emitter Saturation Voltage vs. Gate to Emitter Voltage (Typical)
Collector to Emitter Saturation Voltage VCE(sat) (V)
Collector to Emitter Saturation Voltage VCE(sat) (V)
Collector to Emitter Saturation Voltage vs. Gate to Emitter Voltage (Typical)
5 0 Collector current wave (Square wave)
4 3 2 1 0 1
Tj = 125°C, Tc = 90°C, VCE = 400 V VGE = 15 V, Rg = 5 Ω, duty = 50% 10
100
1000
Frequency f (kHz)
Page 4 of 9
RJH60M1DPE
Preliminary
Switching Characteristics (Typical) (1)
Switching Characteristics (Typical) (2) 10
Swithing Energy Losses E (mJ)
Switching Times t (ns)
1000
tf 100 td(off) td(on) 10
tr VCC = 300 V, VGE = 15 V Rg = 5 Ω, Tc = 150°C
1 1
VCC = 300 V, VGE = 15 V Rg = 5 Ω, Tc = 150°C
Eon 1 Eoff
0.1
10
1
100
Switching Characteristics (Typical) (4)
Switching Characteristics (Typical) (3)
Swithing Energy Losses E (mJ)
1000
Switching Time t (ns)
100
Collector Current IC (A) (Inductive load)
Collector Current IC (A) (Inductive load)
VCC = 300 V, VGE = 15 V IC = 8 A, Tc = 150°C
tf 100 td(off) td(on) tr 10
1
Eoff Eon 0.1
VCC = 300 V, VGE = 15 V IC = 8 A, Tc = 150°C 0.01
1
10
1
100
1000
Swithing Energy Losses E (mJ)
VCC = 300 V, VGE = 15 V IC = 8 A, Rg = 5 Ω
tf td(off) td(on) tr
10 25
50
75
100
125
150
Junction Temperature Tj (°C) (Inductive load)
R07DS0529EJ0300 Rev.3.00 May 25, 2012
100
Switching Characteristics (Typical) (6)
Switching Characteristics (Typical) (5)
100
10
Gate Registance Rg (Ω) (Inductive load)
Gate Resistance Rg (Ω) (Inductive load)
Switching Times t (ns)
10
1
VCC = 300 V, VGE = 15 V IC = 8 A, Rg = 5 Ω
Eoff 0.1
0.01 25
Eon
50
75
100
125
150
Junction Temperature Tj (°C) (Inductive load)
Page 5 of 9
RJH60M1DPE
Preliminary Typical Capacitance vs. Collector to Emitter Voltage
Capacitance C (pF)
Cies
100
Coes
10
Cres
VGE = 0 V f = 1 MHz Tc = 25°C
1 0
50
100
150
200
250
800
600
12
400
8
200
0
300
0
Reverse Recovery Charge Qrr (μC)
Reverse Recovery Time trr (ns)
VCC = 300 V IF = 8 A Tc = 150°C
150 100 25°C 50 0 40
80
120
160
18
24
0 30
1.0 VCC = 300 V IF = 8 A 0.8
0.6
Tc = 150°C
0.4
0.2 25°C 0
200
0
40
80
120
160
200
Diode Current Slope diF/dt (A/μs)
Diode Current Slope diF/dt (A/μs)
Reverse Recovery Current vs. Diode Current Slope (Typical)
Forward Current vs. Forward Voltage (Typical)
16
20 VCC = 300 V IF = 8 A
Forward Current IF (A)
Reverse Recovery Current Irr (A)
12
Reverse Recovery Charge vs. Diode Current Slope (Typical)
300
0
6
Gate Charge Qg (nC)
Reverse Recovery Time vs. Diode Current Slope (Typical)
200
4
VCC = 300 V IC = 8 A Tc = 25°C
VCE
Collector to Emitter Voltage VCE (V)
250
16
VGE
Gate to Emitter Voltage VGE (V)
1000
Collector to Emitter Voltage VCE (V)
Dynamic Input Characteristics (Typical)
12 Tc = 150°C 8
4
25°C
0
VCE = 0 V Pulse Test
16
12 Tc = 150°C 8
25°C
4
0 0
40
80
120
160
200
Diode Current Slope diF/dt (A/μs)
R07DS0529EJ0300 Rev.3.00 May 25, 2012
0
0.4
0.8
1.2
1.6
2.0
C-E Diode Forward Voltage VCEF (V)
Page 6 of 9
Preliminary
Normalized Transient Thermal Impedance γs (t)
RJH60M1DPE Normalized Transient Thermal Impedance vs. Pulse Width (IGBT) 10 Tc = 25°C
1
D=1 0.5 0.2
θj – c(t) = γs (t) • θj – c θj – c = 2.38°C/W, Tc = 25°C
0.1
0.1
0.05 0.02 0.01 1 shot pulse
PDM
D=
PW T
PW T 0.01 100 μ
1m
10 m
100 m
Pulse Width
1
10
100
PW (s)
Normalized Transient Thermal Impedance γs (t)
Normalized Transient Thermal Impedance vs. Pulse Width (Diode) 10 Tc = 25°C
1
D=1 0.5 0.2 0.1
0.1
0.05 0.02 0.01 1 shot pulse
0.01 100 μ
R07DS0529EJ0300 Rev.3.00 May 25, 2012
θj – c(t) = γs (t) • θj – c θj – c = 2.8°C/W, Tc = 25°C
1m
PDM
D=
PW T
PW T 10 m
100 m
Pulse Width
1
10
100
PW (s)
Page 7 of 9
RJH60M1DPE
Preliminary
Switching Time Test Circuit
Waveform
90%
VGE
Diode clamp
10%
L
IC D.U.T
90%
VCC
90%
Rg 10%
10% td(off)
Diode Reverse Recovery Time Test Circuit
tf
td(on)
tr
Waveform
VCC
IF D.U.T IF
diF/dt
L
trr
0 Irr
Rg
R07DS0529EJ0300 Rev.3.00 May 25, 2012
0.5 Irr 0.9 Irr
Page 8 of 9
RJH60M1DPE
Preliminary
Package Dimension JEITA Package Code SC-83
RENESAS Code PRSS0004AE-B
Previous Code LDPAK(S)-(1) / LDPAK(S)-(1)V
MASS[Typ.] 1.30g
7.8 6.6
(1.5)
10.0
2.49 ± 0.2 0.2 0.1 +– 0.1
7.8 7.0
1.3 ± 0.15
+ 0.3 – 0.5
8.6 ± 0.3
(1.5)
(1.4)
4.44 ± 0.2 10.2 ± 0.3
Unit: mm
1.7
Package Name LDPAK(S)-(1)
2.2
1.37 ± 0.2
2.54 ± 0.5
0.2 0.86 +– 0.1
2.54 ± 0.5
0.4 ± 0.1 0.3 3.0 +– 0.5
1.3 ± 0.2
Ordering Information Orderable Part Number RJH60M1DPE-00#J3
R07DS0529EJ0300 Rev.3.00 May 25, 2012
Quantity 1000 pcs
Shipping Container Taping
Page 9 of 9
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