Transcript
Preliminary Datasheet
RJH60M3DPE 600V - 17A - IGBT Application: Inverter
R07DS0533EJ0300 Rev.3.00 May 25, 2012
Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25°C) Built in fast recovery diode (90 ns typ.) in one package Trench gate and thin wafer technology High speed switching tf = 70 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 17 A, Rg = 5 , Ta = 25°C)
Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) ) C 4
1. Gate 2. Collector 3. Emitter 4. Collector
G 1
2
3 E
Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage / diode reverse voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Collector peak current Collector to emitter diode forward current Collector to emitter diode forward peak current Collector dissipation Junction to case thermal resistance (IGBT) Junction to case thermal resistance (Diode) Junction temperature Storage temperature
Symbol VCES / VR VGES IC IC ic(peak) Note1 iDF iDF(peak) Note1 PC Note2 j-c Note2 j-cd Note2 Tj Tstg
Ratings 600 ±30 35 17 50 17 50 113 1.11 2.8 150 –55 to +150
Unit V V A A A A A W °C/ W °C/ W °C °C
Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tc = 25C
R07DS0533EJ0300 Rev.3.00 May 25, 2012
Page 1 of 9
RJH60M3DPE
Preliminary
Electrical Characteristics (Ta = 25°C) Item Collector to emitter breakdown voltage Zero gate voltage collector current / Diode reverse current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to emitter charge Gate to collector charge Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Short circuit withstand time
FRD Forward voltage FRD reverse recovery time FRD reverse recovery charge FRD peak reverse recovery current
Symbol V(BR)CES ICES / IR
Min 600 —
Typ — —
Max — 5
Unit V A
Test Conditions Iy = 10 A, VGE = 0 VCE = 600 V, VGE = 0
IGES VGE(off) VCE(sat) VCE(sat) Cies Coes Cres Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Etotal tsc
— 5 — — — — — — — — — — — — — — — 6
— — 1.8 2.2 900 60 30 60 9 35 38 20 90 70 0.29 0.29 0.58 8
±1 7 2.3 — — — — — — — — — — — — — — —
A V V V pF pF pF nC nC nC ns ns ns ns mJ mJ mJ s
VGE = ±30 V, VCE = 0 VCE = 10 V, IC = 1 mA IC = 17 A, VGE = 15 V Note3 IC = 35 A, VGE = 15 V Note3
VF trr Qrr Irr
— — — —
1.3 90 0.15 4.5
1.7 — — —
V ns C A
IF = 17 A Note3
VCE = 25 V VGE = 0 f = 1 MHz VGE = 15 V VCE = 300 V IC = 17 A VCC = 300 V VGE = 15 V IC = 17 A Rg = 5 Inductive load
Tc = 100 C VCC 360 V, VGE = 15 V
IF = 17 A diF/dt = 100 A/s
Notes: 3. Pulse test.
R07DS0533EJ0300 Rev.3.00 May 25, 2012
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RJH60M3DPE
Preliminary
Main Characteristics Collector Dissipation vs. Case Temperature
Maximum DC Collector Current vs. Case Temperature 40
100
Collector Current IC (A)
Collector Dissipation Pc (W)
120
80 60 40 20 0 25
50
75
10
0
100 125 150 175
50
75
100 125 150 175
Case Temperature Tc (°C)
Maximum Safe Operation Area
Turn-off SOA
10
10
0
80
=
μs
10
Collector Current IC (A)
PW
μs
1
0.1
0.01 1
25
Case Temperature Tc (°C)
100
60
40
20
Tc = 25°C Single pulse 0 10
0
1000
100
200
400
600
800
Collector to Emitter Voltage VCE (V)
Collector to Emitter Voltage VCE (V)
Typical Output Characteristics
Typical Output Characteristics
50
50
Pulse Test Ta = 25°C
13 V
40 14 V 15 V 30 10 V
20
Pulse Test Ta = 150°C
12 V
Collector Current IC (A)
Collector Current IC (A)
20
0 0
Collector Current IC (A)
30
10
40
13 V 14 V
12 V
15 V 30
20
10 V
10 VGE = 8 V
VGE = 8 V 0
0 0
1
2
3
4
5
Collector to Emitter Voltage VCE (V)
R07DS0533EJ0300 Rev.3.00 May 25, 2012
0
1
2
3
4
5
Collector to Emitter Voltage VCE (V)
Page 3 of 9
RJH60M3DPE
Preliminary
Collector to Emitter Saturation Voltage VCE(sat) (V)
5 Tc = 25°C Pulse Test 4
3 IC = 35 A 2 17 A
1 8
10
12
14
16
18
5 Tc = 150°C Pulse Test 4
3
IC = 35 A
2
17 A
1
20
8
14
16
18
20
Typical Transfer Characteristics
Collector to Emitter Saturation Voltage vs. Junction Temparature (Typical)
Tc = 150°C 25°C
30
20
10 VCE = 10 V Pulse Test 0 0
4
8
12
16
4 VGE = 15 V Pulse Test 3
IC = 35 A 17 A
2
3A 1
0 −25
0
25
50
75
100 125 150
Case Temparature Tc (°C)
Gate to Emitter Voltage VGE (V) Gate to Emitter Cutoff Voltage vs. Junction Temparature (Typical)
Frequency Characteristics (Typical) 16
10
Collector Current IC(RMS) (A)
Gate to Emitter Cutoff Voltage VGE(off) (V)
12
Gate to Emitter Voltage VGE (V)
40
8 IC = 10 mA 6 1 mA
4
2 VCE = 10 V Pulse Test 0 −25
10
Gate to Emitter Voltage VGE (V)
50
Collector Current IC (A)
Collector to Emitter Saturation Voltage vs. Gate to Emitter Voltage (Typical)
Collector to Emitter Saturation Voltage VCE(sat) (V)
Collector to Emitter Saturation Voltage VCE(sat) (V)
Collector to Emitter Saturation Voltage vs. Gate to Emitter Voltage (Typical)
0
12
Collector current wave (Square wave)
8
4 Tj = 125°C, Tc = 90°C VCE = 400 V, VGE = 15 V Rg = 5 Ω, duty = 50%
0 0
25
50
75
100 125 150
Junction Temparature Tj (°C)
R07DS0533EJ0300 Rev.3.00 May 25, 2012
1
10
100
1000
Frequency f (kHz)
Page 4 of 9
RJH60M3DPE
Preliminary
Switching Characteristics (Typical) (1)
Switching Characteristics (Typical) (2) 10
Swithing Energy Losses E (mJ)
Switching Times t (ns)
1000
tf td(off)
100
td(on) 10
tr VCC = 300 V, VGE = 15 V Rg = 5 Ω, Tc = 150°C
1 1
VCC = 300 V, VGE = 15 V Rg = 5 Ω, Tc = 150°C
1 Eoff Eon
0.1
10
1
100
Collector Current IC (A) (Inductive load)
Collector Current IC (A) (Inductive load)
Switching Characteristics (Typical) (4)
Switching Characteristics (Typical) (3)
Swithing Energy Losses E (mJ)
Switching Time t (ns)
1000 VCC = 300 V, VGE = 15 V IC = 17 A, Tc = 150°C
tf td(off)
100
td(on) tr 10
10 VCC = 300 V, VGE = 15 V IC = 17 A, Tc = 150°C
1
Eoff Eon
0.1 1
10
1
100
1000
Swithing Energy Losses E (mJ)
VCC = 300 V, VGE = 15 V IC = 17 A, Rg = 5 Ω
td(off) tf td(on) tr
10 25
50
75
100
125
150
Channel Temperature Tc (°C) (Inductive load)
R07DS0533EJ0300 Rev.3.00 May 25, 2012
100
Switching Characteristics (Typical) (6)
Switching Characteristics (Typical) (5)
100
10
Gate Registance Rg (Ω) (Inductive load)
Gate Resistance Rg (Ω) (Inductive load)
Switching Times t (ns)
100
10
10 VCC = 300 V, VGE = 15 V IC = 17 A, Rg = 5 Ω
1 Eoff Eon
0.1 25
50
75
100
125
150
Channel Temperature Tc (°C) (Inductive load)
Page 5 of 9
RJH60M3DPE
Preliminary Typical Capacitance vs. Collector to Emitter Voltage
Cies
1000
100 Coes 10
VGE = 0 V f = 1 MHz Tc = 25°C
Cres
1 0
50
100
150
200
250
800
600
12
400
8
VCE
200
0
10
Reverse Recovery Charge Qrr (μC)
Reverse Recovery Time trr (ns)
160 Tc = 150°C 120
80 25°C 40 VCC = 300 V IF = 17 A 80
120
160
40
50
60
0 70
0.5 VCC = 300 V IF = 17 A 0.4 Tc = 150°C
0.3
0.2 25°C
0.1
0
200
0
40
80
120
160
200
Diode Current Slope di/dt (A/μs)
Diode Current Slope di/dt (A/μs)
Reverse Recovery Current vs. Diode Current Slope (Typical)
Forward Current vs. Forward Voltage (Typical)
16
50 VCC = 300 V IF = 17 A
Forward Current IF (A)
Reverse Recovery Current Irr (A)
30
Reverse Recovery Charge vs. Diode Current Slope (Typical)
200
40
20
Gate Charge Qg (nc)
Reverse Recovery Time vs. Diode Current Slope (Typical)
0
VCC = 300 V 4 IC = 17 A Tc = 25°C
0
300
Collector to Emitter Voltage VCE (V)
0
16
VGE
Gate to Emitter Voltage VGE (V)
Capacitance C (pF)
1000
Collector to Emitter Voltage VCE (V)
Dynamic Input Characteristics (Typical)
12
8
Tc = 150°C
4
25°C
0 0
40
80
120
160
200
Diode Current Slope di/dt (A/μs)
R07DS0533EJ0300 Rev.3.00 May 25, 2012
Tc = 150°C
40
25°C 30
20
10
VGE = 0 V Pulse Test
0 0
0.4
0.8
1.2
1.6
2.0
2.4
C-E Diode Forward Voltage VCEF (V)
Page 6 of 9
Preliminary
Normalized Transient Thermal Impedance γs (t)
RJH60M3DPE Normalized Transient Thermal Impedance vs. Pulse Width (IGBT) 10 Tc = 25°C
D=1
1
0.5 0.2 0.1
θj – c(t) = γs (t) • θj – c θj – c = 1.11°C/W, Tc = 25°C
.05
0
0.1
0.02 0.01 1 shot pulse
PDM
D=
PW T
PW T 0.01 100 μ
1m
10 m
100 m
Pulse Width
1
10
100
PW (s)
Normalized Transient Thermal Impedance γs (t)
Normalized Transient Thermal Impedance vs. Pulse Width (Diode) 10 Tc = 25°C
1
D=1 0.5 0.2 0.1
0.1
0.05 0.02 0.01 1 shot pulse
0.01 100 μ
R07DS0533EJ0300 Rev.3.00 May 25, 2012
θj – c(t) = γs (t) • θj – c θj – c = 2.8°C/W, Tc = 25°C
1m
PDM
D=
PW T
PW T 10 m
100 m
Pulse Width
1
10
100
PW (s)
Page 7 of 9
RJH60M3DPE
Preliminary
Switching Time Test Circuit
Waveform
90%
VGE
Diode clamp
10%
L
IC D.U.T
90%
VCC
90%
Rg 10%
10% td(off)
Diode Reverse Recovery Time Test Circuit
tf
td(on)
tr
Waveform
VCC
IF D.U.T IF
diF/dt
L
trr
0 Irr
Rg
R07DS0533EJ0300 Rev.3.00 May 25, 2012
0.5 Irr 0.9 Irr
Page 8 of 9
RJH60M3DPE
Preliminary
Package Dimension JEITA Package Code SC-83
RENESAS Code PRSS0004AE-B
Previous Code LDPAK(S)-(1) / LDPAK(S)-(1)V
MASS[Typ.] 1.30g
7.8 6.6
(1.5)
10.0
2.49 ± 0.2 0.2 0.1 +– 0.1
7.8 7.0
1.3 ± 0.15
+ 0.3 – 0.5
8.6 ± 0.3
(1.5)
(1.4)
4.44 ± 0.2 10.2 ± 0.3
Unit: mm
1.7
Package Name LDPAK(S)-(1)
2.2
1.37 ± 0.2
2.54 ± 0.5
0.2 0.86 +– 0.1
2.54 ± 0.5
0.4 ± 0.1 0.3 3.0 +– 0.5
1.3 ± 0.2
Ordering Information Orderable Part Number RJH60M3DPE-00#J3
R07DS0533EJ0300 Rev.3.00 May 25, 2012
Quantity 1000 pcs
Shipping Container Taping
Page 9 of 9
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