Schottky Barrier Diode Data Sheet Rb160m-40

Transcript

Data Sheet Schottky Barrier Diode RB160M-40 Applications General rectification Dimensions (Unit : mm) Land size figure (Unit : mm) 0.1±0.1 　　　 0.05 1.2 0.85 1.6±0.1 2.6±0.1 ① 3.5±0.2 3.05 Features 1)Small power mold type.（PMDU） 2)Low IR 3)High reliability PMDU Construction Silicon epitaxial Structure 0.9±0.1 0.8±0.1 ROHM : PMDU JEDEC :SOD-123 Manufacture Date Taping specifications (Unit : mm) 4.0±0.1 1.81±0.1 Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive) Reverse voltage (DC) Average rectified forward current Forward current surge peak （60Hz・1cyc） Junction temperature Storage temperature Io IFSM Tj Tstg 3.71±0.1 8.0±0.2 φ1.0±0.1 Limits 40 40 1 30 150 40 to 150 Symbol VRM VR 0.25±0.05 1.75±0.1 φ1.55±0.05 2.0±0.05 3.5±0.05 4.0±0.1 1.5MAX Unit V V A A C C (*1)Mounted on epoxy board. 180°Half sine wave Electrical characteristic (Ta=25°C) Parameter Conditions Forward voltage Symbol VF Min. - Typ. 0.46 Max. 0.51 Unit V IF=1.0A Reverse current IR - 4.0 30 μA VR=40V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.04 - Rev.E Data Sheet RB160M-40 10000 100 Ta=150℃ Ta=25℃ Ta=-25℃ 10 1 0 100 200 300 400 500 Ta=75℃ 100 10 Ta=25℃ 1 0.1 Ta=-25℃ 0.01 450 AVE:454.3mV 440 5 10 15 20 25 30 35 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 20 15 10 AVE:4.08uA 5 270 8.3ms 100 AVE:83.0A 250 240 230 220 Ct DISPERSION MAP 100 Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 20 15 10 AVE:10.4ns 5 80 60 40 Ifsm 20 8.3ms 8.3ms 1cyc 0 0 1 trr DISPERSION MAP IFSM DISRESION MAP 1000 t 100 50 0 0.1 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 100 IM=10mA 100 1 IF=0.5A 0.9 Rth(j-a) 100 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS Mounted on epoxy board 1ms time 300us Rth(j-c) 10 1 0.8 FORWARD POWER DISSIPATION:Pf(W) Ifsm TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) PEAK SURGE FORWARD CURRENT:IFSM(A) 200 30 200 25 0 25 Ta=25℃ f=1MHz VR=0V n=10pcs AVE:279.7pF 260 PEAK SURGE FORWARD CURRENT:IFSM(A) REVERSE RECOVERY TIME:trr(ns) 1cyc Ifsm 20 210 30 150 15 280 IR DISPERSION MAP 200 10 290 0 150 5 300 VF DISPERSION MAP PEAK SURGE FORWARD CURRENT:IFSM(A) 0 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS Ta=25℃ VR=40V n=30pcs 25 430 50 10 40 30 REVERSE CURRENT:IR(uA) FORWARD VOLTAGE:VF(mV) 480 460 100 1 0 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 470 f=1MHz 1000 0.001 600 Ta=25℃ VF=1A n=30pcs 1000 Ta=125℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=125℃ REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(mA) Ta=75℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1000 D=1/2 0.7 0.6 DC Sin(θ＝180) 0.5 0.4 0.3 0.2 0.1 0 0.1 0.001 0.01 0.1 1 10 100 TIME:t(s) Rth-t CHARACTERISTICS 2/3 1000 0 0.5 1 1.5 2 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 2011.04 - Rev.E Data Sheet RB160M-40 3 2.5 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.04 REVERSE POWER DISSIPATION:PR (W) 3 0.03 DC 0.02 D=1/2 0.01 Sin(θ＝180) Io 0A 0V t 2 DC T VR D=t/T VR=20V Tj=150℃ D=1/2 1 10 20 30 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 40 DC Io t T VR D=t/T VR=20V Tj=150℃ D=1/2 1 0.5 Sin(θ＝180) 0 0 2 1.5 1.5 0.5 0A 0V 2.5 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.05 Sin(θ＝180) 0 0 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 150 0 25 50 75 100 125 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) 150 30 ELECTROSTATIC DISCHARGE TEST ESD(KV) No break at 30kV 25 20 15 10 5 AVE:7.30kV 0 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.04 - Rev.E Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A