Schottky Barrier Diode Data Sheet Rb461f

Transcript

Data Sheet Schottky Barrier Diode RB461F Dimensions (Unit : mm) Applications Low power rectification Land size figure (Unit : mm) 1.3 2.0±0.2 2.1±0.1 1.25±0.1 (3) 3)High reliability 0.8MIN UMD3 Construction Silicon epitaxial planer 0.1Min 0～0.1 (2) (1) （0.65） 0.65 0.9MIN. Features 1)Small mold type. (UMD3) 2)Low VF. 1.6 0.3±0.1 各リードとも Each lead has same dimension 0.15±0.05 同寸法 （0.65） 0.7±0.1 1.3±0.1 0.9±0.1 Structure ROHM : UMD3 JEDEC : SOT-323 JEITA : SC-70 dot (year week factory) Taping specifications (Unit : mm) φ1.55±0.05 2.0±0.05 0.3±0.1 Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive) Reverse voltage (DC) Average rectified forward current Forward current surge peak (60Hz・1cyc) (*1) Junction temperature Storage temperature Electrical characteristics (Ta=25°C) Parameter Forward voltage Reverse current www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. φ0.5±0.05 4.0±0.1 Limits 25 20 0.7 3 125 40 to 125 Symbol VRM VR Io IFSM Tj Tstg 1.25±0.1 Unit V V A A °C °C Unit Conditions Symbol VF Min. Typ. Max. - - 0.49 V IF=700mA IR - - 200 μA VR=20V 1/3 2.4±0.1 8.0±0.2 0～0.1 2.4±0.1 2.25±0.1 　　　　 0 5.5±0.2 3.5±0.05 1.75±0.1 4.0±0.1 2011.04 - Rev.C Data Sheet RB461F 1 100 100000 Ta=125℃ Ta=75℃ 0.1 Ta=-25℃ Ta=25℃ 0.01 Ta=75℃ 1000 100 Ta=25℃ 10 Ta=-25℃ 1 0.001 100 200 300 400 500 600 0 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 20 1 30 0 Ta=25℃ VR=20V n=30pcs 90 460 450 440 80 70 60 50 40 30 AVE:12.63uA 20 AVE:445.4mV 430 90 85 80 75 70 AVE:79.4pF 65 60 10 55 0 50 VF DISPERSION MAP Ct DISPERSION MAP IR DISPERSION MAP 10 REVERSE RECOVERY TIME:trr(ns) 1cyc Ifsm 15 8.3ms 10 5 AVE:5.20A Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 25 20 15 10 5 AVE:10.4ns PEAK SURGE FORWARD CURRENT:IFSM(A) 30 20 Ifsm 8.3ms 8.3ms 1cyc 5 0 0 0 1 IFSM DISPERSION MAP t 5 0 10 TIME:t(ms) IFSM-t CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 100 Rth(j-a) 0.8 100 Rth(j-c) Mounted on epoxy board IM=10mA IF=100mA 10 1ms time FORWARD POWER DISSIPATION:Pf(W) TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) Ifsm 100 1 1000 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS trr DISPERSION MAP 10 20 Ta=25℃ f=1MHz VR=0V n=10pcs 95 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 470 5 10 15 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 100 100 Ta=25℃ VF=0.7A n=30pcs REVERSE CURRENT:IR(uA) FORWARD VOLTAGE:VF(mV) 10 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 480 PEAK SURGE FORWARD CURRENT:IFSM(A) 10 0.1 0 PEAK SURGE FORWARD CURRENT:IFSM(A) f=1MHz 10000 CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(A) Ta=125℃ D=1/2 0.6 DC Sin(θ＝180) 0.4 0.2 300us 1 0.001 0 0.1 10 TIME:t(s) Rth-t CHARACTERISTICS 2/3 1000 0 0.5 1 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 1.5 2011.04 - Rev.C Data Sheet RB461F 0.001 0.0006 D=1/2 0.0004 DC Sin(θ＝180) 0.0002 t 1 D=1/2 T DC VR D=t/T VR=10V Tj=125℃ 0.5 Sin(θ＝180) 0 10 20 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 30 DC 1 Io t T D=1/2 0.5 VR D=t/T VR=10V Tj=125℃ Sin(θ＝180) 0 0 0 0A 0V Io 0A 0V AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.0008 REVERSE POWER DISSIPATION:PR (W) 1.5 1.5 0 25 50 75 100 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 3/3 125 0 25 50 75 100 125 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) 2011.04 - Rev.C Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A