Transcript
RB521G-30 Diodes
Schottky barrier diode RB521G-30 zApplication Rectifying small power
zExternal dimensions (Unit : mm)
zLand size figure (Unit : mm) 0.5
0.13±0.03
0.5
0.6±0.05
1.0±0.05
1.4±0.05
1.2
zFeatures 1) Ultra small mold type. (VMD2) 2) Low VF 3) High reliability
VMD2
zConstruction Silicon epitaxial planer
0.27±0.03
0.5±0.05
zStructure
ROHM : VMD2 dot (year week factory)
zTaping specification (Unit : mm) 0.18±0.05 φ1.5+0.1 0
2±0.05
3.5±0.05 0.4
2.1±0.1
1.11±0.05
φ0.5 4±0.1
0.76±0.1
zAbsolute maximum ratings (Ta=25°C) Parameter Reverse voltage (DC) Average rectified forward current Forward current surge peak （60Hz・1cyc） Junction temperature Storage temperature zElectrical characteristics (Ta=25°C) Parameter Symbol
Symbol VR Io IFSM Tj Tstg
Forward voltage
VF
Min. -
Reverse current
IR
-
Limits 30 100 500 125 -40 to +125
Typ. -
Max. 0.35
Unit V
-
10
µA
2±0.05
8.0±0.3 0.1
1.75±0.1
4±0.1
0.3 0.65±0.05
Unit V mA mA ℃ ℃
Conditions IF=10mA VR=10V
Rev.A
1/3
RB521G-30 Diodes zElectrical characteristic curves (Ta=25°C)
Ta=-25℃
1
Ta=25℃
0.1 0.01 0.001
Ta=75℃ 100 Ta=25℃
10 1
Ta=-25℃
0.1 0.01
0
100
200
300
400
500
600
10
Ta=25℃ IF=10mA n=30pcs
290
0
280 270 260
15 10 AVE:2.017uA
5
AVE:3.90A 5
0
8.3ms 8.3ms 1cyc 5
10
5
1
Mounted on epoxy board IF=100mA
DC
0.06 Sin(θ＝180) 0.04
D=1/2
0.04
DC Sin(θ＝180)
0
0 TIME:t(s) Rth-t CHARACTERISTICS
0.06
0.02
300us
1000
100
0.08 D=1/2
0.02
time
10 TIME:t(ms) IFSM-t CHARACTERISTICS
REVERSE POWER DISSIPATION:PR (W)
FORWARD POWER DISSIPATION:Pf(W)
Rth(j-c)
t
0.1
0.08
10
AVE:17.34pF
Ifsm
100
0.1
Rth(j-a)
0.1
12
NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS
IFSM DISRESION MAP
10 0.001
13
0 1
1ms
14
10 Ifsm
0
IM=10mA
15
Ct DISPERSION MAP
PEAK SURGE FORWARD CURRENT:IFSM(A)
10
PEAK SURGE FORWARD CURRENT:IFSM(A)
8.3ms
100
16
IR DISPERSION MAP
10
1000
17
10
VF DISPERSION MAP
15
20
Ta=25℃ f=1MHz VR=0V n=10pcs
18
11
0
1cyc
15
19
AVE:270.2mV
Ifsm
10
20
20
20
5
REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS
Ta=25℃ VR=10V n=30pcs
25
REVERSE CURRENT:IR(uA)
FORWARD VOLTAGE:VF(mV)
30
REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS
250
PEAK SURGE FORWARD CURRENT:IFSM(A)
20
30
300
10
1 0
FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS
TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W)
f=1MHｚ
1000
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
Ta=75℃
Ta=125℃
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
10
Ta=125℃
REVERSE CURRENT:IR(uA)
FORWARD CURRENT:IF(mA)
100
100
10000
1000
0
0.1 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS
0.2
0
10
20
30
REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS
Rev.A
2/3
RB521G-30 Diodes 0.3 0A 0V 0.2
DC
Io t T
VR D=t/T VR=15V Tj=125℃
D=1/2 0.1 Sin(θ＝180)
AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
0.3
0A 0V 0.2
Io t
DC T
VR D=t/T VR=15V Tj=125℃
D=1/2 0.1
Sin(θ＝180) 0
0 0
25 50 75 100 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta)
125
0
25
50
75
100
125
CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc)
Rev.A
3/3
Appendix
Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
