Transcript
SiC Schottky Barrier Diode SCS110AG Dimensions (Unit : mm)
Applications Switching power supply
Structure
Features 1)Shorter recovery time 2)Reduced temperature dependence 3)High-speed switching possible
Construction Silicon carbide epitaxial planer type
ROHM : ＴO-220AC
Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive) Reverse voltage (DC) Continuous forward current (*1) Forward current surge peak (60Hz・1cyc) (*2) Junction temperature Storage temperature
Limits 600 600 10 40 150
Symbol VRM VR IF IFSM Tj Tstg
Unit V V A A °C °C
55 to 150
(*1)Tc=117°C max (*2)PW=8.3ms sinusoidal
Electrical characteristics (Ta=25°C) Parameter
Symbol VDC
Min.
Typ.
Max.
Unit
600
-
-
V
IR=0.2mA
Forward voltage
VF
-
1.5
1.7
V
IF=10A
Reverse current
IR
-
2.0
200
μA
VR=600V
-
430
-
pF
VR=1V,f=1MHz
DC blocking voltage
Conditions
Total capacitance
C
-
47
-
pF
VR=600V,f=1MHz
Total capacitive charge
Qc
-
16
-
nC
VR=400V,di/dt=350A/μs
Switching time
tc
-
15
-
ns
VR=400V,di/dt=350A/μs
Rth(j-c)
-
-
1.8
°C/W
Thermal resistance
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junction to case
2011.04 - Rev.A
Data Sheet
SCS110AG
Fig.2 VF-IF Characteristics
Fig.1 VF-IF Characteristics 15
100
pulsed
pulsed
Ta= 125°C
10 FORWARD CURRENT: IF(A)
FORWARD CURRENT: IF(A)
Ta= 75°C Ta= 125°C Ta= 25°C
1 Ta= 75°C
Ta=-25°C 0.1
0.01
10
5 Ta= 25°C Ta=-25°C 0
0.001 0
0.5
1
1.5
2
0
2.5
0.5
FORWARD VOLTAGE : VF (V)
2
2.5
1000 CAPACITANCE BETWEEN TERMINALS : Ct [pF]
10000 REVERSE CURRENT (nA)
1.5
Fig.4 VR-Ct Characteristics
Fig.3 VR-IR Characteristics 100000
Ta= 125°C 1000 Ta= 75°C Ta= 25°C
100
10 Ta=-25°C
1 0
200
400
600
100
10
Ta=25°C f=1MHz 1 0.01
0.1
1
10
100
1000
REVERSE VOLTAGE : VR [V]
REVERSE VOLTAGE : VR (V)
Fig.5 Thermal Resistance vs Pulse Width
Fig.6 Power Dissipation 80
10
Ta=25°C Single Pulse
70 60 POWER DISSIPATION (W)
THERMAL RESISTANCE : (℃/W)
1
FORWARD VOLTAGE : VF (V)
1
0.1
50 40 30 20 10
0.01 0.00001 0.0001 0.001
0 0.01
0.1
1
10
100
1000
0
PULSE WIDTH ： Pw ( s )
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30
60
90
120
150
CASE TEMPERATURE : Tc (℃)
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2011.04 - Rev.A
Data Sheet
SCS110AG
Fig.7 Derating Curve Ip-Tc
Fig.8 Io-Pf Characteristics
60
40 D.C. Duty=0.8 35
50
Duty=0.5
40
POWER DISSIPATION (W)
PEAK FORWARD CURRENT (A)
Duty=0.1
Duty=0.2
30 Duty=0.5 20
Duty=0.8
10
30
Duty=0.2 Duty=0.1
25 20 15 10
D.C. 5
0
0 0
30
60
90
120
150
0
CASE TEMPARATURE : Tc (℃)
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5
10
15
AVERAGE RECTIFIED FORWARD CURRENT : Io (A)
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2011.04 - Rev.A
Notice
Notes
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R1120A
