Transcript
SD1480
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1480 is Designed for Class C, 28 V High Band Applications up to 175 MHz.
FEATURES:
PACKAGE STYLE .500 6L FLG
• Internal Input Matching Network • Common Emitter • PG = 9.0 dB at 125 W/175 MHz • Omnigold™ Metalization System
A
C
2x ØN FU LL R D
B
MAXIMUM RATINGS IC
20 A
VCBO
65 V
VCEO VCES VEBO
E .725/18,42 F
G
M
K H
36 V
4.0 V
I
L
D IM
M IN IM U M inche s / m m
inche s / m m
A
.150 / 3.43
.160 / 4.06
M AX IM U M
.045 / 1.14
B
65 V
J
C
.210 / 5.33
.220 / 5.59
D
.835 / 21.21
.865 / 21.97
E
.200 / 5.08
.210 / 5.33
F
.490 / 12.45
.510 / 12.95
G
.003 / 0.08
.007 / 0.18 .125 / 3.18
H
PDISS
270 W @ TC = 25 °C
I J
.970 / 24.64
.980 / 24.89
TJ
-65 °C to +200 °C
K
.090 / 2.29
.105 / 2.67
L
.150 / 3.81
.725 / 18.42
TSTG
-65 °C to +150 °C
θJC
0.65 °C/W
CHARACTERISTICS
.120 / 3.05
N
.135 / 3.43
TC = 25 °C
NONETEST CONDITIONS
SYMBOL
.170 / 4.32 .285 / 7.24
M
MINIMUM TYPICAL MAXIMUM
UNITS
BVCBO
IC = 100 mA
65
V
BVCES
IC = 100 mA
65
V
BVCEO
IC = 100 mA
35
BVEBO
IE = 10 mA
4.0
ICES
VCE = 30 V
hFE
VCE = 5.0 V
COB
VCB = 28 V
PG ηC
VCE = 28 V
IC = 5.0 A
20 f = 1.0 MHz
POUT = 125 W
f = 150 MHz
9.2 55
A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice.
V 15
mA
200
---
250
pF dB %
REV. B
1/1
Mouser Electronics Authorized Distributor
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Advanced Semiconductor, Inc.: SD1480
