Transcript
Doc No. TT4-EA-14122 Revision. 2
Product Standards Schottky Barrier Diode
DB2440300L
DB2440300L Silicon epitaxial planar type Unit: mm
2.4
For rectification
0.15 2
Features 3.8 4.7
Low forward voltage VF Forward current (Average) IF(AV) = 3 A rectification is possible Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) 1
Marking Symbol: 43 1.75
0.85
Packaging Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)
Absolute Maximum Ratings Ta = 25 C Parameter Symbol Reverse voltage Maximum peak reverse voltage Forward current *1 Non-repetitive peak forward surge current Junction temperature *1 Operating ambient temperature Storage temperature Note:
*2
VR VRM IF IFSM Tj Topr Tstg
1. Cathode 2. Anode Panasonic JEITA Code
Rating
Unit
40 40 3.0 30 150 -40 to +85 -55 to +150
V V A A °C °C °C
*1 Tl = 80 °C *2 50 Hz sine wave 1 cycle (Non-repetitive peak current)
TMiniP2-F2-B SC-110A ―
Internal Connection 2
1
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Established : 2012-03-02 Revised : 2013-04-19
Doc No. TT4-EA-14122 Revision. 2
Product Standards Schottky Barrier Diode
DB2440300L Electrical Characteristics Ta = 25 C 3 C Parameter Symbol Forward voltage Reverse current Terminal capacitance Reverse recovery time
VF IR Ct trr
*1
Conditions
Min
IF = 3.0 A VR = 40 V VR = 10 V, f = 1 MHz IF = IR = 100 mA, Irr = 10 mA
Typ
Max
Unit
0.54 250
V μA pF ns
50 15
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 Measuring methods for Diodes. 2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 3. *1 trr test circuit
Input Pulse
Bias Application Unit (N-50BU)
tp
tr 10%
A
Pulse Generator (PG-10N) Rs = 50 Ω
VR Wave Form Analyzer (SAS-8130) Ri = 50 Ω
Output Pulse t IF
trr
90% tp = 2 μs tr = 0.35 ns δ = 0.05
IF = 100 mA IR = 100 mA
t Irr = 10 mA
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Established : 2012-03-02 Revised : 2013-04-19
Doc No. TT4-EA-14122 Revision. 2
Product Standards Schottky Barrier Diode
DB2440300L Technical Data ( reference ) IR - VR
IF - VF
1.E-01
1.E+01 Reverse current IR (A)
Forward current IF (A)
Ta = 125 °C
1.E+00 85 °C
1.E-01 1.E-02 25 °C
1.E-03 -40 °C
1.E-04 1.E-05 0.0
Ta = 125 °C
1.E-02 1.E-03
25 °C
1.E-04 1.E-05
-40 °C
1.E-06 1.E-07 1.E-08
0.1
0.2
0.3
0.4
0.5
0.6
0
5
10
Forward voltage VF (V)
20
25
30
35
40
Rth - t
Ct - VR 1000
(1)
Ta = 25 °C f = 1 MHz
200
Thermal resistance Rth (°C/W)
Terminal capacitance Ct (pF)
15
Reverse voltage VR (V)
250
150 100 50
(2)
100
0
5
10
15 20 25 30 Reverse voltage VR (V)
35
(3) Rth(j-l) = 9 °C/W
10
0
(1) Non-heat sink (2) Mounted on glass epoxy print board. (3) Mounted on alumina print board. Board size : 50 mm × 50 mm x 0.8 mm Solder in : 2 mm x 2 mm
1 0.001
40
0.01
0.1
IF(AV) - Tl tp/T
3
IF
tp T
1/2
VR = 20 V Tj = 125 °C
2 1.5 1/4
1
100
1000
PF(AV) - IF(AV)
DC
2.5
1 10 Time t (s)
2 Forward power dissipation (Average) PF(AV) (W)
3.5 Forward current (Average) IF(AV) (A)
85 °C
Sine Wave
0.5
IF
tp
DC
Sine Wave
T
1.5
1/2
1/4
1
0.5
0
0 0
25
50 75 100 125 Lead temperature Tl (°C)
150
175
0
0.5
1
1.5
2
2.5
3
3.5
Forward current (Average) IF(AV) (A)
Page 3 of 4
Established : 2012-03-02 Revised : 2013-04-19
Doc No. TT4-EA-14122 Revision. 2
Product Standards Schottky Barrier Diode
DB2440300L
TMiniP2-F2-B
Unit: mm
2.4±0.1
0.15±0.05
(5°)
4.7±0.1
3.8±0.1
2
0.45±0.10
1
0 to 0.03
(5°)
0 to 0.4
0.85±0.05
1.75±0.10
Land Pattern (Reference) (Unit: mm)
1.4
4.4
1.4
2.1
Page 4 of 4
Established : 2012-03-02 Revised : 2013-04-19
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