Transcript
Doc No. TT4-EA-14953 Revision. 1
Product Standards MOS FET
FJ4B01110L
FJ4B01110L Single P-channel MOS FET Unit: mm
For Load switching circuits
0.60
4
3
1
2
0.60
TOP Drain-source ON resistance:Rds(on) typ. = 141 m( VGS = -2.5 V ) CSP (Chip Size Package) RoHS compliant (EU RoHS / MSL:Level 1 compliant)
0.10
Features
BOTTOM
Packaging
0.30
Embossed type (Thermo-compression sealing) : 20 000 pcs / reel (standard)
Absolute Maximum Ratings Ta = 25 ºC Parameter Symbol Drain-Source Voltage Gate-Source Voltage Drain Current
Peak Drain Current
Power Dissipation Channel Temperature Operating Ambient Temperature Storage Temperature Note *1 *2 *3 *4
VDS VGS ID1*1 ID2*2 ID3*3 IDp1*1*4 IDp2*2*4 IDp3*3*4 PD1*1 PD2*2 PD3*3 Tch Topr Tstg
Rating
Unit
-12 ±8 -1.4 -2.2 -2.6 -11 -17 -20 0.34 0.76 1.1 150 -40 ~ +85 -55 ~ +150
V V A
0.45
Marking Symbol: 1E
0.30
0.15
0.45
1. Gate 2. Drain Panasonic JEITA Code
3. Source 4. Source ALGA004-W-0606-RA01
— —
Internal Connection 2(D)
A
W °C °C °C
1(G)
3,4(S)
FR4 board (25.4mm×25.4mm×t1.0mm)、Min Cu 36mm2 Copper FR4 board (25.4mm×25.4mm×t1.0mm)、Full Cu Ceramic substrate (70mm×70mm×t1.0mm) t = 10 μs, Duty Cycle < 1%
Page 1 of 6
Established : 2014-03-24 Revised : ####-##-##
Doc No. TT4-EA-14953 Revision. 1
Product Standards MOS FET
FJ4B01110L Electrical Characteristics Ta = 25 ºC 3 ºC Parameter Symbol Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Current Gate Threshold Voltage
VDSS IDSS IGSS Vth
Drain-Source ON Resistance
RDS(on)
Input Capacitance *1 Output Capacitance *1 Reverse Transfer Capacitance *1 Turn-on delay time *1,*2 Rise time *1,*2 Turn-off delay time *1,*2 Fall time *1,*2 Total Gate Charge *1 Gate to Source Charge *1 Gate to Drain Miller Charge *1 Body Diode Forward Voltage
Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VF(D-S)
Note
Conditions ID = -1 mA, VGS = 0 VDS = -12 V, VGS = 0 VGS = ±8 V, VDS = 0 V ID = -0.598 mA, VDS =-10 V ID = -0.7 A, VGS = -4.5 V ID = -0.7 A, VGS = -2.5 V ID = -0.2 A, VGS = -1.8 V ID = -0.1 A, VGS = -1.5 V VDS = -10 V VGS = 0 f = 1MHz
Min
Typ
Max
Unit
-12
-0.3 118 141 169 199 226 62 51 3.8 2.5 30 5.4 3.3 0.55 0.65 -0.7
VDD = -6 V VGS = 0 to -4.5 V ID = -1.0 A VDD = -6 V VGS = -4.5 V ID = -1.0 A IF = -0.2A, VGS = 0V
V μA μA V
-10 ±10 -1.0 153 183 287 597
m
pF
ns nC nC nC V
-1.2
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors. *1 Guaranteed by design, not subject to production testing *2 Measurement circuit for Turn-on delay time / Rise time / Turn-off delay time / Fall time
Electrical State Discharge Characteristics Standard Test Type Symbol Conditions Human body model HBM C = 100 pF, R = 1.5 k AEC-Q101-001 C = 200 pF, R = 0 MM Machine model
Class
Value
H1B >500 to ≦ 1k M1B >50 to ≦ 100
Unit V V
Page 2 of 6
Established : 2014-03-24 Revised : ####-##-##
Doc No. TT4-EA-14953 Revision. 1
Product Standards MOS FET
FJ4B01110L Note2: Measurement circuit VDD = -6V Vin 0V -4.5 V
ID = -1A
PW = 10 μs D.C. ≦ 1 %
RL = 6
Vout
D
Vin
G
50 S
10 % Vin
90 % 90 %
Vout 10 %
td(on) tr
td(off) tf
Page 3 of 6
Established : 2014-03-24 Revised : ####-##-##
Doc No. TT4-EA-14953 Revision. 1
Product Standards MOS FET
FJ4B01110L ID - VDS -1.0
RDS(on) - ID 1000
Drain source On-resistance RDS (on) (mΩ)
- 4.5 V
Drain current ID (A)
- 2.5 V - 1.8 V
-0.5
- 1.5 V VGS = - 1.2 V
-0.0 -0.0
-0.1
-0.2
-0.3
- 1.5 V
- 2.5 V 100
VGS = - 4.5 V
10
-0.1
-1.0 Drain current ID( A)
Drain-source voltage VDS (V)
Drain-source On-resistance RDS(on) (mΩ)
ID - VGS
-1.E+00
Drain current ID (A)
125 ºC 85 ºC 25 ºC
-1.E-01
- 40 ºC
-1.E-02
-0.0
-0.5
125 ºC 85 ºC 25 ºC
- 40 ºC
-1
Gate-source voltage VGS (V)
-2
-3
-4
-5
-6
-7
-8
Gate-source voltage VGS (V)
IF - VF
IGS - VGS
-1.E+00
-1.E-04
125 ºC 85 ºC 25 ºC -1.E-01
- 40 ºC
-1.E-02
-0.0
-0.2
-0.4
-0.6
-0.8
Body Diode Forward Voltage VF (V)
Gate-source Leakage Current IGS (A)
Diode Forward Current IF (A)
-10.0
RDS(on) - VGS
300 280 260 240 220 200 180 160 140 120 100 80 60 40 20 0 -0
-1.0
- 1.8 V
-1.0
125 ºC -1.E-05
85 ºC
-1.E-06
25 ºC
-1.E-07
- 40 ºC
-1.E-08 -1.E-09
-0
-5
-10
-15
-20
Gate-source voltage VGS (V) Page 4 of 6
Established : 2014-03-24 Revised : ####-##-##
Doc No. TT4-EA-14953 Revision. 1
Product Standards MOS FET
FJ4B01110L IDS - VDS
Dynamic Input/Output Characteristics
-1.E-05
125 ºC
-1.E-06 -1.E-07 -1.E-08 -1.E-09 -1.E-10 -1.E-11
25 ºC
-40 ºC
-1.E-12
85 ºC
-1.E-13
-0
Thermal resistance Rth (ºC / W)
1000
Gate to source Voltage VG (V)
-4.5
-1.E-04
-4.0 -3.5 -3.0 VDD = - 6 V
-2.5
- 12 V
-2.0 -1.5 -1.0 -0.5 -0.0 0
-5 -10 -15 -20 Drain-source Voltage VDS ( V ) Rth - tsw
1 2 3 Total Gate Charge Qg (nC)
4
Safe Operating Area
-1.E+02 Min Cu 36mm2 Copper.
IDP=-11A 100
Full Cu
10 Ta=25ºC, Mounted on FR4 board (25.4mm×25.4mm×t1.0mm).
1 0.001 0.01
0.1
1
10
Pulse Width tsw (s)
Drain current ID (A)
Zero Gate Voltage Drain Current IDS ( A )
-1.E-03
100 1000
10us
-1.E+01 Limited by RDS(on)(VGS=-4.5V)
-1.E+00
1ms -1.E-01
-1.E-02
-1.E-02
Ta=25ºC, Mounted on FR4 board (25.4mm×25.4mm×t1.0mm). using the minimum recommendedpad size (Cu area=47mm2 including traces).
-1.E-01
-1.E+00
10ms 100ms 1s DC -1.E+01
-1.E+02
Drain-source Voltage VDS (V)
Page 5 of 6
Established : 2014-03-24 Revised : ####-##-##
Doc No. TT4-EA-14953 Revision. 1
Product Standards MOS FET
FJ4B01110L ALGA004-W-0606-RA01
Unit: mm 0.60±0.03 3
1
2
0.10±0.02
0.60±0.03
4
0.45
0.30
Φ0.15±0.03
0.30 0.45 Land Pattern (Reference)
Page 6 of 6
Established : 2014-03-24 Revised : ####-##-##
Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. (3) The products described in this book are intended to be used for general applications (such as office equipment, communications equipment, measuring instruments and household appliances), or for specific applications as expressly stated in this book. Consult our sales staff in advance for information on the following applications: – Special applications (such as for airplanes, aerospace, automotive equipment, traffic signaling equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. It is to be understood that our company shall not be held responsible for any damage incurred as a result of or in connection with your using the products described in this book for any special application, unless our company agrees to your using the products in this book for any special application. (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. (7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of our company. 20100202
