Transcript
Doc No. TT4-EA-14960 Revision. 1
Product Standards MOS FET
FJ4B01120L
FJ4B01120L Single P-channel MOS FET Unit: mm
For Load switching circuits
1.0
4
3
1
2
Low Drain-source ON resistance:Rds(on) typ. = 40 m（VGS = -2.5 V) CSP (Chip Size Package) RoHS compliant (EU RoHS / MSL:Level 1 compliant)
0.10
1.0
TOP
Features
BOTTOM
Packaging
0.5 0.75
Embossed type (Thermo-compression sealing) : 20 000 pcs / reel (standard)
Absolute Maximum Ratings Ta = 25 C Parameter Symbol Drain-Source Voltage Gate-Source Voltage Drain Current
Peak Drain Current
Power Dissipation Channel Temperature Operating Ambient Temperature Storage Temperature Note *1 *2 *3 *4
VDS VGS ID1*1 ID2*2 ID3*3 IDp1*1*4 IDp2*2*4 IDp3*3*4 PD1*1 PD2*2 PD3*3 Tch Topr Tstg
Rating
Unit
-12 ±8 -2.6 -4.2 -5.4 -20 -33 -43 0.37 0.94 1.5 150 -40 ~ +85 -55 ~ +150
V V A
0.75
Marking Symbol: 1F
0.5
0.25
1. Gate 2. Drain Panasonic JEITA Code
3. Source 4. Source ULGA004-W-1010-RA01
— —
Internal Connection 2(D)
A
W °C °C °C
1(G)
3,4(S)
FR4 board (25.4mm×25.4mm×t1.0mm)、Min Cu 36mm2 Copper FR4 board (25.4mm×25.4mm×t1.0mm)、Full Cu Ceramic substrate (70mm×70mm×t1.0mm) t = 10 μs, Duty Cycle < 1%
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Established : 2014-03-31 Revised : ####-##-##
Doc No. TT4-EA-14960 Revision. 1
Product Standards MOS FET
FJ4B01120L Electrical Characteristics Ta = 25 C 3 C Parameter Symbol Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Current Gate Threshold Voltage
VDSS IDSS IGSS Vth
Drain-Source ON Resistance
RDS(on)
Input Capacitance *1 Output Capacitance *1 Reverse Transfer Capacitance *1 Turn-on delay time *1,*2 Rise time *1,*2 Turn-off delay time *1,*2 Fall time *1,*2 Total Gate Charge *1 Gate to Source Charge *1 Gate to Drain Miller Charge *1 Body Diode Forward Voltage
Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VF(D-S)
Note
Conditions ID = -1 mA, VGS = 0 VDS = -12 V, VGS = 0 VGS = ±8 V, VDS = 0 V ID = -2 mA, VDS =-10 V ID = -2 A, VGS = -4.5 V ID = -2 A, VGS = -2.5 V ID = -0.2 A, VGS = -1.8 V ID = -0.1 A, VGS = -1.5 V VDS = -10 V VGS = 0 f = 1MHz
Min
Typ
Max
Unit
-12
-0.3 34 40 48 57 814 201 187 6 4 63 46 10.7 1.4 2.1 -0.7
VDD = -6 V VGS = 0 to -4.5 V ID = -1.0 A VDD = -6 V VGS = -4.5 V ID = -1.0 A IF = -0.2A, VGS = 0V
V μA μA V
-10 ±10 -1.0 51 61 85 170
m
pF
ns nC nC nC V
-1.2
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors. *1 Guaranteed by design, not subject to production testing *2 Measurement circuit for Turn-on delay time / Rise time / Turn-off delay time / Fall time
Electrical State Discharge Characteristics Standard Test Type Symbol Conditions Human body model HBM C = 100 pF, R = 1.5 k AEC-Q101-001 C = 200 pF, R = 0 MM Machine model
Class
Value
H1C >1k to ≦ 2k M2 >100 to ≦ 200
Unit V V
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Established : 2014-03-31 Revised : ####-##-##
Doc No. TT4-EA-14960 Revision. 1
Product Standards MOS FET
FJ4B01120L Note2: Measurement circuit VDD = -6V Vin 0V
ID = -1A
PW = 10 μs D.C. ≦ 1 %
-4.5 V
RL = 6
Vout
D
Vin
G
50 S
10 % Vin
90 % 90 %
Vout 10 %
td(on) tr
td(off) tf
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Established : 2014-03-31 Revised : ####-##-##
Doc No. TT4-EA-14960 Revision. 1
Product Standards MOS FET
FJ4B01120L ID - VDS -2.0
RDS(on) - ID 100
Drain current ID (A)
- 2.5 V -1.5
- 1.8 V -1.0
- 1.5 V VGS = - 1.2 V
-0.5
VGS = - 4.5 V
-0.0
-0.1
-0.2
-0.3
-0.1
-1.0 Drain current ID(A)
Drain-source voltage VDS (V) -1.E+00
ID - VGS
Drain-source On-resistance RDS(on) (mΩ)
-1.E-01
25 ºC 85 ºC - 40 ºC -1.E-02
-0.0
-0.5
80
125 ºC 85 ºC
60
25 ºC
40 - 40 ºC
20 0
-1.0
-0
-1
Gate-source voltage VGS (V)
-2
-3
-4
-5
-6
-7
-8
Gate-source voltage VGS (V)
IF - VF
IGS - VGS -1.E-04
125 ºC 85 ºC 25 ºC
-1.E-01
- 40 ºC
Gate-source Leakage Current IGS (A)
-1.E+00
125 ºC -1.E-05
85 ºC
-1.E-06
25 ºC
-1.E-07
- 40 ºC
-1.E-08
-1.E-09
-1.E-02
-0.0
-10.0
RDS(on) - VGS
100
125 ºC Drain current ID (A)
- 2.5 V
10
-0.0
Diode Forward Current IF (A)
- 1.8 V
- 1.5 V
Drain source On-resistance RDS (on) (mΩ)
- 4.5 V
-0.2 -0.4 -0.6 -0.8 -1.0 Body Diode Forward Voltage VF (V)
-0
-5
-10
-15
-20
Gate-source voltage VGS (V) Page 4 of 6
Established : 2014-03-31 Revised : ####-##-##
Doc No. TT4-EA-14960 Revision. 1
Product Standards MOS FET
FJ4B01120L IDS - VDS
Dynamic Input/Output Characteristics -4.5 Gate to source Voltage VG (V)
-1.E-04
125 ºC
-1.E-05 -1.E-06 -1.E-07 -1.E-08 -1.E-09 -1.E-10 -1.E-11
-40 ºC
85 ºC 25 ºC
-1.E-12
-0
Thermal resistance Rth (ºC / W)
1000
-4.0 -3.5 -3.0
VDD = - 6 V
-2.5 -2.0
- 12 V
-1.5 -1.0 -0.5 -0.0
0 1 2 3 4 5 6 7 8 9 10 11 12
-5 -10 -15 -20 Drain-source Voltage VDS ( V )
Total Gate Charge Qg (nC)
Rth - tsw
Safe Operating Area
-1.E+02 Min Cu 36mm2 Copper.
100
Full Cu
10 Ta=25ºC, Mounted on FR4 board (25.4mm×25.4mm×t1.0mm).
1 0.001
0.1
10
Pulse Width tsw (s)
IDP=-20A Drain current ID (A)
Zero Gate Voltage Drain Current IDS (A)
-1.E-03
1000
-1.E+01
Limited by RDS(on)(VGS=-4.5V)
10us
1ms -1.E+00
10ms -1.E-01
Ta=25 ºC, Mounted on FR4 board (25.4mm×25.4mm×t1.0mm). using the minimum recommendedpad size (Cu area=47mm2 including traces).
100ms 1s DC
-1.E-02
-1.E-02
-1.E-01
-1.E+00
-1.E+01
-1.E+02
Drain-source Voltage VDS (V)
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Established : 2014-03-31 Revised : ####-##-##
Doc No. TT4-EA-14960 Revision. 1
Product Standards MOS FET
FJ4B01120L ULGA004-W-1010-RA01
Unit: mm 1.000.05 2
1
3
0.100.02
1.000.05
2
0.75
0.50
0.250.03
0.50 0.75 Land Pattern (Reference)
0.50
0.250.03
0.50
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Established : 2014-03-31 Revised : ####-##-##
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