Transcript
SI2304DS N-channel enhancement mode field-effect transistor Rev. 01 — 17 August 2001
Product data
M3D088
1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology Product availability: SI2304DS in SOT23.
2. Features ■ TrenchMOS™ technology ■ Very fast switching ■ Subminiature surface mount package.
3. Applications ■ Battery management ■ High speed switch ■ Low power DC to DC converter.
4. Pinning information Table 1:
Pinning - SOT23, simplified outline and symbol
Pin
Description
1
gate (g)
2
source (s)
3
drain (d)
Simplified outline
Symbol
3
d
g 1
2
Top view
SOT23
1.
TrenchMOS is a trademark of Koninklijke Philips Electronics N.V.
MSB003
MBB076
s
SI2304DS
Philips Semiconductors
N-channel enhancement mode field-effect transistor
5. Quick reference data Table 2:
Quick reference data
Symbol Parameter
Conditions
Min
Typ
Max
Unit
VDS
drain-source voltage (DC)
Tj = 25 to 150 °C
−
−
30
V
ID
drain current (DC)
Tsp = 25 °C; VGS = 5 V
−
−
1.7
A
Ptot
total power dissipation
Tsp = 25 °C
Tj
junction temperature
RDSon
drain-source on-state resistance
−
−
0.83
W
−
−
150
°C
VGS = 10 V; ID = 500 mA
−
−
117
mΩ
VGS = 4.5 V; ID = 500 mA
−
−
190
mΩ
Min
Max
Unit
6. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter
Conditions
VDS
drain-source voltage (DC)
Tj = 25 to 150 °C
−
30
V
VDGR
drain-gate voltage (DC)
Tj = 25 to 150 °C; RGS = 20 kΩ
−
30
V
VGS
gate-source voltage (DC)
−
±20
V
ID
drain current (DC)
−
1.7
A
Tsp = 100 °C; VGS = 5 V; Figure 2 and 3
−
1.1
A
IDM
peak drain current
Tsp = 25 °C; pulsed; tp ≤ 10 µs
−
7.5
A
Ptot
total power dissipation
Tsp = 25 °C; Figure 1
−
0.83
W
Tstg
storage temperature
−65
+150
°C
Tj
operating junction temperature
−65
+150
°C
Tsp = 25 °C; VGS = 5 V; Figure 2 and 3
Source-drain diode IS
source (diode forward) current (DC) Tsp = 25 °C
−
0.83
A
ISM
peak source (diode forward) current Tsp = 25 °C; pulsed; tp ≤ 10 µs
−
3.3
A
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
9397 750 08526
Product data
Rev. 01 — 17 August 2001
2 of 12
SI2304DS
Philips Semiconductors
N-channel enhancement mode field-effect transistor
03aa25
03aa17
120 Ider
120 Pder (%) 100
(%) 100
80
80
60
60
40
40
20
20
0
0 0
50
100
150
o
0
200
50
100
150
o
200
Tsp ( C)
Tsp ( C)
VGS ≥ 10 V
P tot P der = ----------------------- × 100% P °
ID I der = ------------------- × 100% I °
tot ( 25 C )
D ( 25 C )
Fig 1. Normalized total power dissipation as a function of solder point temperature.
Fig 2. Normalized continuous drain current as a function of solder point temperature. 003aaa120
102 ID (A) RDSon = VDS / ID
10
tp = 10 µs
1
1 ms
δ=
P
tp
D.C.
T
10 ms
10-1
100 ms t
tp T
10-2 10-1
1
10
VDS (V)
102
Tsp = 25°C; IDM is single pulse
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
9397 750 08526
Product data
Rev. 01 — 17 August 2001
3 of 12
SI2304DS
Philips Semiconductors
N-channel enhancement mode field-effect transistor
7. Thermal characteristics Table 4:
Thermal characteristics
Symbol Parameter Rth(j-sp)
thermal resistance from junction to solder point
Conditions
Value Unit
mounted on a metal clad substrate; Figure 4
100
K/W
7.1 Transient thermal impedance 003aaa121
103 Zth(j-sp) (K/W) 102 δ= 0.02 0.05 0.1 10
δ=
P
0.2 0.5
tp T
Single pulse t
tp T
1 10-4
10-3
10-2
10-1
10
1 tp (s)
Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration.
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
9397 750 08526
Product data
Rev. 01 — 17 August 2001
4 of 12
SI2304DS
Philips Semiconductors
N-channel enhancement mode field-effect transistor
8. Characteristics Table 5: Characteristics Tj = 25 °C unless otherwise specified Symbol Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics V(BR)DSS drain-source breakdown voltage
VGS(th)
IDSS
gate-source threshold voltage
drain-source leakage current
ID = 10 µA; VGS = 0 V Tj = 25 °C
30
40
−
V
Tj = −55 °C
27
−
−
V
Tj = 25 °C
1.5
2
−
V
Tj = 150 °C
0.5
−
−
V
Tj = −55 °C
−
−
2.7
V
−
0.01
0.5
µA
ID = 1 mA; VDS = VGS; Figure 9
VDS = 30 V; VGS = 0 V Tj = 25 °C Tj = 150 °C
−
−
10
µA
−
10
100
nA
−
−
117
mΩ
Tj = 25 °C
−
−
190
mΩ
Tj = 150 °C
−
−
300
mΩ
−
S
IGSS
gate-source leakage current
VGS = ±10 V; VDS = 0 V
RDSon
drain-source on-state resistance
VGS = 10 V; ID = 500 mA; Figure 7 and 8 Tj = 25 °C VGS = 4.5 V; ID = 500 mA
Dynamic characteristics gfs
forward transconductance
VDS = 10 V; ID = 1 A
1.4
2.5
Qg(tot)
total gate charge
VDD = 15 V; VGS = 10 V; ID = 0.5 A; Figure 13
−
4.6
Qgs
gate-source charge
−
0.6
−
nC
Qgd
gate-drain (Miller) charge
−
1.35
1.83
nC
Ciss
input capacitance
−
147
195
pF
Coss
output capacitance
−
65
78
pF
Crss
reverse transfer capacitance
−
41
56
pF
td(on)
turn-on delay time
−
4
6
ns
VGS = 0 V; VDS = 10 V; f = 1 MHz; Figure 11
VDD = 15 V; RL = 15 Ω; VGS = 10 V
nC
tr
rise time
−
7.5
12
ns
td(off)
turn-off delay time
−
18
35
ns
tf
fall time
−
13
19
ns
−
0.7
1.2
V
−
69
−
ns
Source-drain diode VSD
source-drain (diode forward) voltage IS = 0.83 A; VGS = 0 V; Figure 12
trr
reverse recovery time
IS = 1 A; dIS/dt = −100 A/µs; VGS = 0 V; VDS = 25 V
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
9397 750 08526
Product data
Rev. 01 — 17 August 2001
5 of 12
SI2304DS
Philips Semiconductors
N-channel enhancement mode field-effect transistor
003aaa122
4 10.0 8.0
ID (A)
003aaa123
5 ID (A)
5.0 4.0
VDS > ID x RDSon 4 = 150 oC
3.5
3
Tj = 25 oC
3 2 2 3.0 1
1 VGS (V) = 2.5 0
0 0
0.5
1.0
0
1.5
1
2
3
VDS (V)
4
5
VGS (V)
Tj = 25 °C
Tj = 25 °C and 175 °C; VDS > ID × RDSon
Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values.
Fig 6. Transfer characteristics: drain current as a function of gate-source voltage; typical values. 003aaa125
2.0
003aaa124
0.5 a
RDSon (Ω) 0.4
1.6
1.2 0.3
VGS (V) = 3.5
0.8
0.2
5.0 8.0
0.4
10.0
0.1
0 0
0
1
2
ID (A)
-60
3
20
60
100
140
180
Tj (oC)
Tj = 25 °C
R DSon a = ----------------------------R DSon ( 25°C )
Fig 7. Drain-source on-state resistance as a function of drain current; typical values.
Fig 8. Normalized drain source on-state resistance factor as a function of junction temperature.
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
9397 750 08526
Product data
-20
Rev. 01 — 17 August 2001
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SI2304DS
Philips Semiconductors
N-channel enhancement mode field-effect transistor
10-1 ID
03aa32
5 VGS(th) (V) 4
03aa35
(A) max
10-2
3
typ
10-3
2
min
10-4
min
typ
max
10-5
1
10-6
0 -60
0
60
120
o
Tj ( C)
0
1
180
2
3
5
4 VGS (V)
Tj = 25 °C; VDS = 5 V
ID = 1 mA; VDS = VGS
Fig 9. Gate-source threshold voltage as a function of junction temperature.
Fig 10. Sub-threshold drain current as a function of gate-source voltage. 003aaa126
103 C (pF)
Ciss, 102 Coss, Crss
10
10-1
1
10
VDS (V)
102
VGS = 0 V; f = 1 MHz
Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
9397 750 08526
Product data
Rev. 01 — 17 August 2001
7 of 12
SI2304DS
Philips Semiconductors
N-channel enhancement mode field-effect transistor
003aaa127
2.0
003aaa128
10 VGS
IS (A)
(V) 8
6
Tj = 150 oC
1.0
4
2
Tj = 25 oC
0
0 0.2
0.4
0.6
VSD (V)
0.8
0
4
6
8 QG (nC)
Tj = 25 oC and 150 oC; VGS = 0 V
ID = 0.5 A; VDD = 15 V
Fig 12. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values.
Fig 13. Gate-source voltage as a function of gate charge; typical values.
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
9397 750 08526
Product data
2
Rev. 01 — 17 August 2001
8 of 12
SI2304DS
Philips Semiconductors
N-channel enhancement mode field-effect transistor
9. Package outline Plastic surface mounted package; 3 leads
SOT23
D
E
B
A
X
HE
v M A
3
Q A A1
1
2 e1
bp
c w M B
Lp
e detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions) UNIT
A
A1 max.
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1 0.9
0.1
0.48 0.38
0.15 0.09
3.0 2.8
1.4 1.2
1.9
0.95
2.5 2.1
0.45 0.15
0.55 0.45
0.2
0.1
OUTLINE VERSION SOT23
REFERENCES IEC
JEDEC
EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-02-28 99-09-13
TO-236AB
Fig 14. SOT23. © Koninklijke Philips Electronics N.V. 2001. All rights reserved.
9397 750 08526
Product data
Rev. 01 — 17 August 2001
9 of 12
SI2304DS
Philips Semiconductors
N-channel enhancement mode field-effect transistor
10. Revision history Table 6:
Revision history
Rev Date 01
20010817
CPCN
Description
-
Product data; initial version
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
9397 750 08526
Product data
Rev. 01 — 17 August 2001
10 of 12
SI2304DS
Philips Semiconductors
N-channel enhancement mode field-effect transistor
11. Data sheet status Data sheet status[1]
Product status[2]
Definition
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice.
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product.
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A.
[1]
Please consult the most recently issued data sheet before initiating or completing a design.
[2]
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
12. Definitions
13. Disclaimers
Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook.
Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.
Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
Right to make changes — Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
Contact information For additional information, please visit http://www.semiconductors.philips.com. For sales office addresses, send e-mail to:
[email protected].
Product data
Fax: +31 40 27 24825 © Koninklijke Philips Electronics N.V. 2001. All rights reserved.
9397 750 08526
Rev. 01 — 17 August 2001
11 of 12
Philips Semiconductors
SI2304DS N-channel enhancement mode field-effect transistor
Contents 1 2 3 4 5 6 7 7.1 8 9 10 11 12 13
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Transient thermal impedance . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
© Koninklijke Philips Electronics N.V. 2001. Printed in The Netherlands All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 17 August 2001
Document order number: 9397 750 08526
