Si4574dy N- And P-channel 40 V (d

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Si4574DY Vishay Siliconix N- and P-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 40 P-Channel - 40 ID (A)a Qg (Typ.) RDS(on) (Ω) 0.0175 at VGS = 10 V 10 0.020 at VGS = 4.5 V 9.2 0.021 at VGS = - 10 V - 9.2 0.028 at VGS = - 4.5 V - 7.4 6.2 21.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • CCFL Inverter • DC/DC Converters in LCD Backlighting D1 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 S2 G2 G1 Top View Ordering Information: Si4574DY-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 D2 N-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol N-Channel P-Channel Drain-Source Voltage VDS 40 - 40 Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 °C) TC = 25 °C 10 - 9.2 8 - 7.4 ID 8.0 TA = 70 °C TC = 25 °C TA = 25 °C Pulsed Source-Drain Current Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH TC = 70 °C TA = 25 °C - 5.8b, c - 40 - 2.6 ISM 1.6b, c 40 - 1.6b, c - 40 IAS 10 - 20 EAS 5 20 3.1 3.2 2 2.1 b, c 2b, c IS PD TA = 70 °C 2 1.28b, c TJ, Tstg Operating Junction and Storage Temperature Range - 7.2b, c b, c 2.6 TC = 25 °C Maximum Power Dissipation b, c 6.2 40 IDM Pulsed Drain Current (10 µs Pulse Width) Source-Drain Current Diode Current V ± 20 TC = 70 °C TA = 25 °C Unit A mJ W 1.28b, c - 55 to 150 °C THERMAL RESISTANCE RATINGS N-Channel Parameter P-Channel Symbol Typ. Max. Typ. Max. Maximum Junction-to-Ambientb, d t ≤ 10 s RthJA 50 62.5 47 62.5 Maximum Junction-to-Foot (Drain) Steady State RthJF 30 40 29 38 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 120 °C/W (N-Channel) and 110 °C/W (P-Channel). Document Number: 65749 S10-0462-Rev. A, 22-Feb-10 www.vishay.com 1 Si4574DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ.a Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate Threshold Voltage Gate-Body Leakage VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSS VGS = 0 V, ID = 250 µA N-Ch 40 VGS = 0 V, ID = - 250 µA P-Ch - 40 ID = 250 µA N-Ch P-Ch - 34 ID = 250 µA N-Ch - 5.6 5.0 On-State Drain Currentb Drain-Source On-State Resistanceb Forward Transconductanceb IDSS ID(on) RDS(on) gfs V ID = - 250 µA P-Ch VDS = VGS, ID = 250 µA N-Ch 1.2 2.5 VDS = VGS, ID = - 250 µA P-Ch - 1.2 - 2.5 VDS = 0 V, VGS = ± 20 V VDS = 40 V, VGS = 0 V Zero Gate Voltage Drain Current 40 ID = - 250 µA N-Ch 100 P-Ch - 100 N-Ch 1 VDS = - 40 V, VGS = 0 V P-Ch -1 VDS = 40 V, VGS = 0 V, TJ = 55 °C N-Ch 10 VDS = - 40 V, VGS = 0 V, TJ = 55 °C P-Ch - 10 VDS = 5 V, VGS = 10 V N-Ch 20 VDS = - 5 V, VGS = - 10 V P-Ch - 20 VGS = 10 V, ID = 8 A N-Ch 0.0145 0.0175 VGS = - 10 V, ID = - 8 A P-Ch 0.0175 0.021 VGS = 4.5 V, ID = 5 A N-Ch 0.0165 0.020 VGS = - 4.5 V, ID = - 5 A P-Ch 0.0232 0.028 VDS = 15 V, ID = 8 A N-Ch 37 VDS = - 15 V, ID = - 8 A P-Ch 25 nA µA A Ω S Dynamica Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss N-Channel VDS = 20 V, VGS = 0 V, f = 1 MHz P-Channel VDS = - 20 V, VGS = 0 V, f = 1 MHz VDS = 20 V, VGS = 10 V, ID = 10 A Total Gate Charge Gate-Source Charge Qg VDS = - 20 V, VGS = - 10 V, ID = - 10 A 745 P-Ch 2000 N-Ch 120 P-Ch 240 N-Ch 49 P-Ch 202 N-Ch 13.4 41.5 63 6.2 9.3 33 P-Ch 21.7 1.7 P-Ch 5.6 N-Ch 1.9 P-Ch 9.8 Gate-Drain Charge Qgd Gate Resistance Rg f = 1 MHz 20 P-Ch N-Ch Qgs pF N-Ch N-Channel VDS = 20 V, VGS = 4.5 V, ID = 10 A P-Channel VDS = - 20 V, VGS = - 4.5 V, ID = - 10 A www.vishay.com 2 N-Ch N-Ch 0.3 1.4 2.8 P-Ch 1.3 6.4 12.8 nC Ω Document Number: 65749 S10-0462-Rev. A, 22-Feb-10 Si4574DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ.a Max. Unit Dynamica td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time td(on) Turn-On Delay Time tr Rise Time Fall Time P-Channel VDD = - 20 V, RL = 2 Ω ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω N-Channel VDD = 20 V, RL = 2 Ω ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω tf P-Channel VDD = - 20 V, RL = 2 Ω ID ≅ - 10 A, VGEN = - 4.5 V, Rg = 1 Ω IS TC = 25 °C td(off) Turn-Off Delay Time N-Channel VDD = 20 V, RL = 2 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω N-Ch 5 10 P-Ch 9 18 N-Ch 10 20 P-Ch 9 18 N-Ch 13 26 P-Ch 50 90 N-Ch 8 16 P-Ch 14 28 N-Ch 11 22 P-Ch 42 75 N-Ch 86 140 70 P-Ch 40 N-Ch 12 24 P-Ch 40 70 N-Ch 10 20 P-Ch 15 30 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current a Body Diode Voltage ISM VSD N-Ch 2.6 P-Ch - 2.6 N-Ch 40 P-Ch A - 40 IS = 2 A N-Ch 0.74 1.2 IS = - 2 A P-Ch - 0.77 - 1.2 N-Ch 18 36 P-Ch 30 60 Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr N-Channel IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C N-Ch 10 20 P-Ch 26 52 Reverse Recovery Fall Time ta P-Channel IF = - 5 A, dI/dt = - 100 A/µs, TJ = 25 °C N-Ch 9 P-Ch 15 Reverse Recovery Rise Time tb N-Ch 9 P-Ch 15 V ns nC ns Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 65749 S10-0462-Rev. A, 22-Feb-10 www.vishay.com 3 Si4574DY Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 40 VGS = 10 V thru 4 V 8 ID - Drain Current (A) ID - Drain Current (A) 32 24 VGS = 3 V 16 TC = 25 °C 6 4 TC = 125 °C 8 2 0 0 TC = - 55 °C 0 0.5 1.0 1.5 2.0 2.5 0 2 3 4 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.020 5 1000 0.018 Ciss 800 VGS = 4.5 V C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 1 0.016 VGS = 10 V 0.014 0.012 600 400 Coss 200 Crss 0.010 0 8 16 24 32 0 40 0 8 ID - Drain Current (A) 16 32 40 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 10 2.0 ID = 10 A ID = 8 A 8 1.7 6 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 24 VDS = 10 V VDS = 20 V 4 VDS = 30 V 2 VGS = 10 V 1.4 1.1 VGS = 4.5 V 0.8 0 0 3 6 9 Qg - Total Gate Charge Gate Charge www.vishay.com 4 12 15 0.5 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 65749 S10-0462-Rev. A, 22-Feb-10 Si4574DY Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.060 100 ID = 8 A 0.048 RDS(on) - On-Resistance (Ω) IS - Source Current (A) 10 TJ = 150 °C 1 TJ = 25 °C 0.1 TJ = 125 °C 0.024 TJ = 25 °C 0.012 0.01 0.001 0.0 0.036 0.000 0.2 0.4 0.6 0.8 1.0 0 1.2 1 2 3 4 5 6 7 8 9 10 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.4 60 48 Power (W) VGS(th) - Variance (V) 0.1 ID = 5 mA - 0.2 36 24 ID = 250 μA - 0.5 12 - 0.8 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 TJ - Junction Temperature (°C) 0.1 1 10 Time (s) Single Pulse Power, Junction-to-Ambient Threshold Voltage 100 Limited by RDS(on)* ID - Drain Current (A) 10 1 ms 1 10 ms 100 ms 0.1 1s 10 s TA = 25 °C Single Pulse 0.01 0.01 0.1 BVDSS Limited 1 DC 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 65749 S10-0462-Rev. A, 22-Feb-10 www.vishay.com 5 Si4574DY Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 11.0 ID - Drain Current (A) 8.8 6.6 4.4 2.2 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 4.0 1.5 3.2 1.2 2.4 0.9 Power (W) Power Dissipation (W) Current Derating* 1.6 0.8 0.6 0.3 0.0 0 0 25 50 75 100 125 TC - Case Temperature (°C) Power Derating, Junction-to-Foot 150 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power Derating, Junction-to-Ambient * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 6 Document Number: 65749 S10-0462-Rev. A, 22-Feb-10 Si4574DY Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM t1 0.05 t2 t1 t2 2. Per Unit Base = RthJA = 120 °C/W 1. Duty Cycle, D = 0.02 Single Pulse (t) 3. TJM - TA = PDMZthJA 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Document Number: 65749 S10-0462-Rev. A, 22-Feb-10 www.vishay.com 7 Si4574DY Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 40 10 VGS = 10 V thru 4 V 8 ID - Drain Current (A) ID - Drain Current (A) 32 24 16 6 TC = 25 °C 4 3V 8 0 TC = - 55 °C 0 0 0.5 1.0 1.5 2.0 2.5 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.035 3100 0.031 2480 0.027 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) TC = 125 °C 2 VGS = 4.5 V 0.023 VGS = 10 V 0.019 5 Ciss 1860 1240 Coss 620 Crss 0.015 0 0 8 16 24 32 40 0 8 ID - Drain Current (A) 16 32 40 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 10 1.8 ID = 10 A ID = 8 A 1.6 8 VGS = 10 V RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 24 VDS = 10 V 6 VDS = 20 V 4 VDS = 30 V 2 1.4 VGS = 4.5 V 1.2 1.0 0.8 0 0 9 18 27 Qg - Total Gate Charge Gate Charge www.vishay.com 8 36 45 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 65749 S10-0462-Rev. A, 22-Feb-10 Si4574DY Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 0.10 ID = 8 A 0.08 RDS(on) - On-Resistance (Ω) IS - Source Current (A) 10 TJ = 150 °C 1 TJ = 25 °C 0.1 0.01 0.001 0.0 0.06 TJ = 125 °C 0.04 0.02 TJ = 25 °C 0.00 0.2 0.4 0.6 0.8 1.0 0 1.2 1 2 3 4 5 6 7 8 9 10 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 50 0.8 40 ID = 250 μA Power (W) VGS(th) - Variance (V) 0.5 ID = 5 mA 0.2 30 20 - 0.1 10 - 0.4 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 TJ - Junction Temperature (°C) 0.1 1 10 Time (s) Single Pulse Power, Junction-to-Ambient Threshold Voltage 100 Limited by RDS(on)* ID - Drain Current (A) 10 1 ms 1 10 ms 100 ms 0.1 1s TA = 25 °C Single Pulse 0.01 0.01 0.1 BVDSS Limited 10 s DC 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 65749 S10-0462-Rev. A, 22-Feb-10 www.vishay.com 9 Si4574DY Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 11.0 ID - Drain Current (A) 8.8 6.6 4.4 2.2 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 4.0 1.5 3.2 1.2 2.4 0.9 Power (W) Power (W) Current Derating* 1.6 0.8 0.6 0.3 0 0 25 50 75 100 125 TC - Case Temperature (°C) Power Derating, Junction-to-Foot 150 0 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power Derating, Junction-to-Ambient * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 10 Document Number: 65749 S10-0462-Rev. A, 22-Feb-10 Si4574DY Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 t1 0.05 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 110 °C/W 0.02 Single Pulse 3. TJM - TA = PDMZthJA (t) 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65749. Document Number: 65749 S10-0462-Rev. A, 22-Feb-10 www.vishay.com 11 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer  ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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