Transcript
MIMMK160S160B
Feb 2009
PRELIMINARY
1600V 160A Thyristor Module RoHS Compliant
Features · Isolation voltage 3500 V~ · Industrial Standard Package · High Surge Capability · Glass Passivated Chips · Simple Mounting · Electrically Isolated by DBC Ceramic Applications · DC Motor Control and Drives · Battery Charges · Welders · Power Converters · Lighting Control · Heat and Temperature Control Advantages · Space and weight savings · Improved temperature and power cycling ABSOLUTE MAXIMUM RATINGS Symbol Test Condition V RRM /V DRM
T C =25°C unless otherwise specified
Value
Unit
1600
V
I T(AV)
T C =85℃,180° conduction, half sine wave;
160
A
I T(RMS)
as AC switch;
355
A
T J =45℃, t=10m s (50H z),sine, V R =0;
4870
T J =45℃, t=8.3 m s (60H z),sine, V R =0;
5100
T J =45℃, t=10m s (50H z),sine, V R =V RRM ;
4100
T J =45℃, t=8.3 m s (60H z),sine, V R = V RRM ;
4300 119
I TSM
T J =45℃, t=10m s (50H z),sine, V R =0; 2
It
T J =45℃, t=8.3 m s (60H z),sine, V R =0; T J =45℃, t=10m s (50H z),sine, V R =V RRM ;
130 84
T J =45℃, t=8.3 m s (60H z),sine, V R = V RRM ;
92.5
I DRM /I RRM
T J =125℃,V D =V R =1600V;
dV/dt
A
2
KA s
50
mA
T J =125℃, exponential to 67% rated V DRM
1000
V/us
V ISOL
50Hz, all terminals shorted, t=1s, I ISOL ≤1mA ;
3500
V~
TJ
Max. junction operating temperature range
-40～125
℃
T STG
Max. storage temperature range
-40～150
℃
MIMMK160S160B ELECTRICAL CHARACTERISTICS Symbol Test Condition V TO rt
T C =25°C unless otherwise specified
Min.
Typ. Max. Unit
16.7% x π x I AV < I <π x I AV ,T J =130°C;
0.80
V
I > π x I AV , T J =130°C;
0.98
V
16.7% x π x I AV < I <π x I AV ,T J =130°C;
1.67
mΩ
I > π x I AV , T J =130°C;
1.38
mΩ
IH
V AK = 6V, initial I T =30A;
200
mA
IL
Anode supply =6V, resistive load=1Ω,
400
mA
gate pulse =10V, 100us; V TM
I TM =502A, t d =10 ms, half sine;
P GM
t p ≤5ms, Tj=125°C;
12
W
P GM(AV)
f=50Hz, Tj=125°C;
3
W
3
A
10
V
I GM -V GT
1.54
V
t p ≤5ms, Tj=125°C; V A =6V, R A =1Ω, Tj=-40°C;
V GT
I GT V GD I GD di/dt
4
V A =6V, R A =1Ω;
2.5
V A =6V, R A =1Ω, Tj=125°C;
1.7
V A =6V, R A =1Ω, Tj=-40°C;
270
V A =6V, R A =1Ω;
150
V A =6V, R A =1Ω, Tj=125°C;
80
THERMAL AND MECHANICAL CHARACTERISTICS Symbol Test Condition
mA
0.3
V
10
mA
300
A/us
V AK =V DRM , Tj=125℃ I TM =400A, rated V DRM , Tj=125℃
V
T C =25°C unless otherwise specified
value
Unit
R thjc
DC operation, per junction;
0.18
K/W
R THCS
Mounting surface smooth,flat and greased, per junction;
0.1
K/W
Md Weight
Mounting torque(M6) Terminal connection torque(M6) Typical value
4 to 6
N·m
156
g
MIMMK160S160B Characteristic curves 130 RTHJC(DC)=0.18 K/W 120 110 Conduction angle
100 90
30 60
80
90
120
180
70 0
Maximun allowable case tem (℃)
Maximun allowable case tem (℃)
130
60 120 Average forward current(A)
RTHJC(DC)=0.18 K/W
120 110 100
Conduction period
30
90
60
80
90
70 60
180
0
350 300
180 120 90 60 30
250 200 150
RMS limit
100 50 0
Conduction angle
0
Maximun average on-state power loss (W)
Maximun average on-state power loss (W)
Per junction TJ=125℃
20 40 60 80 100 120 140 160 180 Average on-state current(A)
4000
Initial TJ=125℃ @60Hz 0.0083 s @50Hz 0.01 s
3500 3000 2500 2000
Per junction
1500 100 1 10 Number Of Equal Amplitude Half Cycle Current Pulses (N) Figure 5. Maximum Non-Repetitive Surge Current
300
DC 180 120 90 60 30
350 300 250 200
RMS limit
150 100
Conduction period
Per junction TJ=125℃
50 0
0
30 60 90 120 150 180 210 240 270 Average on-state current(A)
Figure 4. on-state power loss characteristics Peak Half Sine Wave On-state Current (A)
Peak Half Sine Wave On-state Current (A)
At any rated load condition and with rated VRRM applied following surge
100 200 Average on-state current (A)
400
Figure 3. on-state power loss characteristics 4500
DC
Figure 2. current rating characteristics
Figure 1. current rating characteristics 400
120 180
5000 4500
4000 3500
Maximum non repetitive surge current versus pulse train duration. control of conduction may not be maintained. Initial TJ= 125℃ no voltage reapplied rated VRRM reapplied
3000 2500 2000 1500 0.01
Per junction 0.1 Pulse Train Duration (s)
1
Figure 6. Maximum Non-Repetitive Surge Current
MIMMK160S160B 600 Maximum Total On-state Power Loss (W)
Maximum Total On-state Power Loss (W)
600 180 120 90 60 30
500 400 300
Conduction angle
200 Per module TJ=125℃
100 0 0
100
200
400
300 Total RMS Output Current (A)
500
0.06K/W 400
0.08K/W 0.1K/W
300
0.16K/W 0.2K/W
200 100 0 0
Figure 7. On-State Power Loss Characteristics-1
25
Figure.8
10000
1000
Transient Thermal Impedance ZthJC
1
TJ=25℃ TJ=125℃
100
10 Per junction 0 0
4 1 2 3 Instantaneous On-state Voltage (V)
Figure.9
75
100
On-State Power Loss Characteristics-2
1 0.1 Square Wave Pulse Duration (s)
(1) PGM = 200 W, tp = 300s (2) PGM = 60 W, tp = 1 ms (3) PGM = 30 W, tp = 2 ms (4) PGM = 12 W, tp = 5 ms
a)Recommended load line for rated di/dt:20V, 20Ω tr =0.5s, tp≥6 s b)Recommended load line 10 for ≤30% rated di/dt:15V, (a) 40Ω (b) TJ=-40℃ TJ=25℃ TJ=125℃
1
(4)
VGD
(3)
(2)
(1)
Frequency Limited by PG(AV)
IGD
0.01
0.1
10
Figure.10 Thermal Impedance ZthJC Characteristics
On State Voltage Drop Characteristics
0.1 0.001
125
Steady State Value (DC Operation)
0.01 0.01
5
50
0.1
100 Rectangular gate pulse Instantaneous Gate Voltage (V)
Instantaneous On-state Current (A)
RTHSA=0.02K/W-Delta R 0.04K/W
1
Instantaneous Gate Current (A) Figure.11 Gate Characteristics
10
100
1000
MIMMK160S160B
Package Outline (Dimensions in mm)
