Transcript
AOL1401 P-Channel Enhancement Mode Field Effect Transistor General Description
Features
The AOL1401 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. -RoHS Compliant -Halogen and Antimony Free Green Device*
VDS (V) = -38V ID = -85A RDS(ON) < 8.5mΩ (VGS = -20V) RDS(ON) < 10mΩ (VGS = -10V) ESD Rating: 3000V HBM Rg,Ciss,Coss,Crss Tested
Ultra SO-8TM Top View D
D
Bottom tab connected to drain
G
S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TC=25°C
Continuous Drain Current G Pulsed Drain Current Continuous Drain Current G
ID IDM
C
2.08
W
1.3
TJ, TSTG
°C
-55 to 175
Symbol t ≤ 10s Steady-State Steady-State
W
50
PDSM
Junction and Storage Temperature Range
Alpha & Omega Semiconductor, Ltd.
-10 100
PD
TA=25°C
Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case B
A
-120
IDSM
TC=25°C
TA=70°C
V
-12
TA=70°C
Power Dissipation A
±25 -62
TA=25°C
TC=100°C
Units V
-85
TC=100°C
Power Dissipation B
Maximum -38
RθJA RθJC
Typ 21 48 1
Max 25 60 1.5
Units °C/W °C/W °C/W
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AOL1401
Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage
Conditions
Min
ID=-250µA, VGS=0V
-38
IGSS
Gate-Body leakage current
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=-250µA
-1.5
ID(ON)
On state drain current
VGS=-10V, VDS=-5V
-120
RDS(ON)
Static Drain-Source On-Resistance
TJ=55°C
±1
µA
VDS=0V, VGS=±25V
±10
µA
TJ=125°C VGS=-10V, ID=-20A
gFS
Forward Transconductance
VSD
Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current
VDS=-5V, ID=-20A
DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) Qgs Gate Source Charge
nA
-500
VDS=0V, VGS=±20V
VGS=-20V, ID=-20A
Crss
Units
-100
Zero Gate Voltage Drain Current
Coss
Max
V
VDS=-30V, VGS=0V
IDSS
IS
Typ
-2.2
V A
6.8
8.5
9.1
11
7.9
10
mΩ mΩ
50 0.71
3800 VGS=0V, VDS=-20V, f=1MHz
-3.5
S -1
V
14.5
A
4560
pF
560
pF
350 VGS=0V, VDS=0V, f=1MHz
VGS=-10V, VDS=-20V, ID=-20A
pF
7.5
9
61.2
74
Ω nC
11.88
nC nC
Qgd
Gate Drain Charge
15.4
tD(on)
Turn-On DelayTime
13.5
ns
tr
Turn-On Rise Time
17
ns
97
ns
43
ns
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
VGS=-10V, VDS=-20V, RL=1Ω, RGEN=3Ω
trr
Body Diode Reverse Recovery Time
IF=-20A, dI/dt=100A/µs
30
Qrr
Body Diode Reverse Recovery Charge IF=-20A, dI/dt=100A/µs
29
36
ns nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. * This device is guaranteed green after date code 8P11 (June 1 ST 2008) Rev 2: Dec 2008 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
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AOL1401
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120
30 -14V
-10V
VDS=-5V
25 90 20 -ID(A)
-ID (A)
-6V 60
125°C 15 10
-4V
25°C
30 5
Vgs=-3.5V 0
0 0
1
2
3
4
5
2
2.5
-VDS (Volts) Fig 1: On-Region Characteristics
3.5
4
4.5
5
-VGS(Volts) Figure 2: Transfer Characteristics
9
1.8 Normalized On-Resistance
RDS(ON) (mΩ)
3
VGS=-10V
8
7 VGS=-20V
1.6
VGS=-20V ID=-20A
1.4
1.2
VGS=-10V ID=-20A
1
6 0
5
0.8
10
15 20 25 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage
0
30
60
90
120
150
180
210
Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature
1.0E+01
30 ID=-20A
1.0E+00
25
1.0E-01 125°C
-IS (A)
RDS(ON) (mΩ)
20 15
125°C
1.0E-02 1.0E-03
25°C 1.0E-04
10 25°C
1.0E-05
5
1.0E-06 0
0.0 4
6
8
10
-VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.2
0.4
0.6
0.8
1.0
-VSD (Volts) Figure 6: Body-Diode Characteristics
4.9
6
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AOL1401
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5000
10
4000 Capacitance (pF)
-VGS (Volts)
Ciss
VDS=-20V ID=-20A
8
6
4
3000
2000 Coss
Crss
1000
2
0
0 0
10
20
30 40 50 60 -Qg (nC) Figure 7: Gate-Charge Characteristics
0
70
1000.0
5
10
15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics
30
1000 TJ(Max)=175°C, TA=25°C
RDS(ON) limited
100µs 1ms
10.0
10ms 1.0
DC
100m
0.1 0.1
1
10
100
-VDS (Volts)
ZθJC Normalized Transient Thermal Resistance
TJ(Max)=175°C TA=25°C
600 400 200 0 0.0001
0.001
0.01
0.1
1
10
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note B)
Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10
Power (W)
-ID (Amps)
800
10µs
100.0
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=1.5°C/W
1
PD
0.1
Ton Single Pulse 0.01 0.00001
0.0001
0.001
0.01
0.1
T
1
10
100
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
4.9
Alpha & Omega Semiconductor, Ltd.
6
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AOL1401
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60
120
40 Power (W)
Power Dissipation (W)
50 90
60
30
TA=25°C
20
30 10 0 0
25
50
75
100
125
150
0 0.01
175
TCASE (°C) Figure 12: Power De-rating (Note B)
0.1
1
10
100
1000
Pulse Width (s) Figure 13: Single Pulse Power Rating Junction-toAmbient (Note H)
Current rating -ID(A)
100 80 60 40 20 0 0
25
50
75
100
125
150
175
TCASE (°C) Figure 14: Current De-rating (Note B)
ZθJA Normalized Transient Thermal Resistance
100 10
D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=60°C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1 0.1
PD
0.01
0.001 0.00001
Ton
Single Pulse
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
4.9
Alpha & Omega Semiconductor, Ltd.
6
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AOL1401
Gate Charge Test Circuit & W aveform Vgs
Qg
-10V
+
VD C
-
Qgs
Vds
Qgd
+
VDC
DUT
Vgs Ig
Charge
Resistive Switching Test Circuit & W aveforms RL
Vds
t off
t on td(on)
Vgs VDC
Rg
-
DUT
Vgs
t d(off)
tr
tf
90%
Vdd
+
Vgs
10%
Vds
Unclam ped Inductive Switching (UIS) Test Circuit & W aveform s 2
L
E AR = 1/2 LIAR
Vds Vds
Id VDC
-
Vgs
Vgs
+
Rg
BVDSS Vdd
Id
I AR
DUT Vgs
Vgs
Diode Recovery Test Circuit & W aveform s Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
L
Vgs Ig
Alpha & Omega Semiconductor, Ltd.
-Isd
+ Vdd
VDC
-
-I F
t rr
dI/dt -I RM
Vdd
-Vds
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