Transcript
MITSUBISHI
PM600DV1A060 FLAT-BASE TYPE INSULATED PACKAGE
PM600DV1A060
FEATURE
a) Adopting new 5th generation Full-Gate CSTBTTM chip b) The over-temperature protection which detects the chip surface temperature of CSTBTTM is adopted. c) Error output signal is possible from all each protection upper and lower arm of IPM. d) Compatible V-series package. • Monolithic gate drive & protection logic • Detection, protection & status indication circuits for, short-circuit, over-temperature & under-voltage.
APPLICATION General purpose inverter, servo drives and other motor controls PACKAGE OUTLINES
Dimensions in mm
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November. 2011
MITSUBISHI
PM600DV1A060 FLAT-BASE TYPE INSULATED PACKAGE
INTERNAL FUNCTIONS BLOCK DIAGRAM C1 VP1
VCC
CPI
IN
TjA TjK IGBT
OUT Fo
FPO
FWDi
AMP
SINK
NC
GND
SC C2E1
V PC
V N1
VCC
CNI
IN
TjA TjK IGBT
OUT FNO
FWDi
AMP
SINK
Fo
SC
NC GND V NC
E2
MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted) INVERTER PART Symbol VCES IC ICRM Ptot IE IERM Tj
Parameter Collector-Emitter Voltage
Conditions
Collector Current Total Power Dissipation Emitter Current (Free wheeling Diode Forward current)
VD=15V, VCIN=15V TC=25°C Pulse TC=25°C TC=25°C Pulse
Junction Temperature
Ratings 600 600 1200 1712 600 1200 -20 ~ +150
Unit V
Ratings 20 20 20 20
Unit V V V mA
A W A °C
*: Tc measurement point is just under the chip.
CONTROL PART Symbol VD VCIN VFO IFO
Parameter Supply Voltage Input Voltage Fault Output Supply Voltage Fault Output Current
Conditions Applied between : VP1-VPC, VN1-VNC Applied between : CPI-VPC, CNI-VNC Applied between : FPO-VPC, FNO-VNC Sink current at FPO, FNO terminals
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MITSUBISHI
PM600DV1A060 FLAT-BASE TYPE INSULATED PACKAGE
TOTAL SYSTEM Symbol VCC(PROT) VCC(surge) TC Tstg Visol
Parameter Supply Voltage Protected by SC Supply Voltage (Surge) Module case operating temperature Storage Temperature Isolation Voltage
Conditions VD =13.5V ~ 16.5V Inverter Part, Tj =+125°C Start Applied between : C1-E2, Surge value
60Hz, Sinusoidal, Charged part to Base plate, AC 1min, RMS
Ratings
Unit
400
V
500
V
-20 ~ +100
°C
-40 ~ +125
°C
2500
V
*: TC measurement point is just under the chip.
THERMAL RESISTANCE Symbol
Parameter
Rth(j-c)Q Rth(j-c)D
Thermal Resistance
Rth(c-s)
Contact Thermal Resistance
Conditions Junction to case, IGBT (per 1 element) Junction to case, FWDi (per 1 element)
Case to heat sink, (per 1 module) Thermal grease applied
(Note.1) (Note.1) (Note.1)
Min. -
Limits Typ. -
Max. 0.073 0.109
-
0.018
-
Min. 0.3 -
Limits Typ. 1.90 1.90 1.7 0.8 0.4 0.4 1.0 0.3 -
Max. 2.35 2.35 2.8 2.0 0.8 1.0 2.3 1.0 1 10
Unit
K/W
Note1: If you use this value, Rth(s-a) should be measured just under the chips.
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted) INVERTER PART Symbol VCEsat VEC ton trr tc(on) toff tc(off) ICES
Parameter
Conditions
Collector-Emitter Saturation Voltage
VD=15V, IC=600A VCIN=0V, Pulsed
Emitter-Collector Voltage
IE=600A, VD=15V, VCIN= 15V
Switching Time
VD=15V, VCIN=0V← →15V VCC=300V, IC=600A Tj=125°C Inductive Load
Collector-Emitter Cut-off Current
(Fig. 1)
VCE=VCES, VD=15V , VCIN=15V (Fig. 5)
3
Tj=25°C Tj=125°C (Fig. 2)
(Fig. 3,4) Tj=25°C Tj=125°C
Unit V V
s
mA
November. 2011
MITSUBISHI
PM600DV1A060 FLAT-BASE TYPE INSULATED PACKAGE
CONTROL PART Symbol
Parameter
Conditions
Limits Typ. 2 2 1.5 2.0 -
Max. 4 4 1.8 2.3 -
ID
Circuit Current
VD=15V, VCIN=15V
Vth(ON) Vth(OFF) SC
Input ON Threshold Voltage Input OFF Threshold Voltage Short Circuit Trip Level Short Circuit Current Delay Time
Applied between : CPI-VPC, CNI-VNC -20≤Tj≤125°C, VD=15V
(Fig. 3, 6)
Min. 1.2 1.7 900
VD=15V
(Fig. 3, 6)
-
0.2
-
Over Temperature Protection
Detect Temperature of IGBT chip
Supply Circuit Under-Voltage Protection
-20≤Tj≤125°C
Fault Output Current
VD=15V, VFO=15V
(Note.2)
Fault Output Pulse Width
VD=15V
(Note.2)
135 11.5 1.0
20 12.0 12.5 10 1.8
12.5 0.01 15 -
toff(SC) OT OT(hys) UVt UVr IFO(H) IFO(L) tFO
VP1-VPC VN1-VNC
Trip level Hysteresis Trip level Reset level
Unit mA V A s °C V mA ms
Note.2: Fault output is given only when the internal SC, OT & UV protections schemes of either upper or lower arm device operate to protect it.
MECHANICAL RATINGS AND CHARACTERISTICS Symbol Ms Mt m
Parameter Mounting Torque
Conditions Mounting part Main terminal part
screw : M6 screw : M6
Weight
-
Min. 3.92 3.92 -
Limits Typ. 4.90 4.90 510
Max. 5.88 5.88 -
Unit N・m g
RECOMMENDED CONDITIONS FOR USE Symbol VCC
Parameter Supply Voltage
VD
Control Supply Voltage
VCIN(ON) VCIN(OFF) fPWM
Input ON Voltage Input OFF Voltage PWM Input Frequency Arm Shoot-through Blocking Time
tdead
Conditions Applied across C1-E2 terminals Applied between : VP1-VPC, VN1-VNC (Note.3) Applied between : CPI-VPC, CNI-VNC Using Application Circuit of Fig. 8 For IPM’s each input signals
(Fig. 7)
Recommended value ≤ 400
Unit V
15.0±1.5
V
≤ 0.8 ≥ 4.0 ≤ 20
kHz
≥ 3.0
s
V
Note3: With ripple satisfying the following conditions: dv/dt swing ≤ ±5V/μs, Variation ≤ 2V peak to peak
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MITSUBISHI
PM600DV1A060 FLAT-BASE TYPE INSULATED PACKAGE
PRECAUTIONS FOR TESTING 1. Before applying any control supply voltage (VD), the input terminals should be pulled up by resistors, etc. to their corresponding supply voltage and each input signal should be kept off state. After this, the specified ON and OFF level setting for each input signal should be done. 2. When performing “SC” tests, the turn-off surge voltage spike at the corresponding protection operation should not be allowed to rise above VCES rating of the device. ( These test should not be done by using a curve tracer or its equivalent. ) C1(C2)
NC
V *1
V *1
VD
F*O
V
F*O
VD
Ic
V*C
V*C
E1(E2)
E1(E2)
Fig. 1 VCEsat Test
C1
C1
V P1
FPO
FPO
VD1
CPI
CPI
VPC
VPC
Vcc
NC
E1C2
Vcc
NC
E1C2
V N1
VD2
Fig. 2 VEC Test
NC
V P1
VD1
IE-Ic
V
C*I
C *I
NC
C1(C2)
NC
V N1
FNO
FNO
V D2
C NI
CNI E2
VNC
E2
VNC Ic
Ic
Fig. 3 Switching time and SC test circuit
Fig. 4 Switching time test waveform
C1(C2) NC
A
V *1
VD
F*O
pulse
VCE
C*I V*C E1(E2)
Fig. 5 ICES Test
Fig. 6 SC test waveform
Fig. 7 Dead time measurement point example 5
November. 2011
MITSUBISHI
PM600DV1A060 FLAT-BASE TYPE INSULATED PACKAGE
20k
≥10µ
C1
VP1 Vcc OUT
FPO VD1
IF
Fo
CPI
+ Vcc
SC
-
IN
VPC
≥0.1µ
OT
GND
E1C2 (U)
20k
≥10µ
VN1
Vcc OUT
FNO VD2
IF
20k
IN
VNC
≥0.1µ
≥10µ
OT
Fo
CNI
VD3
C1 Vcc OUT OT Fo
CPI ≥0.1µ
E2
VP1 FPO
IF
SC
GND
IN
VPC
SC
GND
E1C2 (V)
20k
≥10µ
VN1
Vcc OUT
FNO VD4
IF
OT
Fo
CNI
SC IN
VNC
≥0.1µ
M
GND
E2
C1 20k
≥10µ
VP1
Vcc OUT
FPO VD5
IF
OT Fo
CPI
SC
IN
VPC
≥0.1µ
GND
E1C2 (W)
20k
≥10µ
VN1
Vcc OUT
FNO VD6
IF
OT Fo
CNI ≥0.1µ
IN
VNC
Fig. 8
SC
GND
E2
Application Example Circuit
NOTES FOR STABLE AND SAFE OPERATION ; • Design the PCB pattern to minimize wiring length between opto-coupler and IPM’s input terminal, and also to minimize the stray capacity between the input and output wirings of opto-coupler. • Connect low impedance capacitor between the Vcc and GND terminal of each fast switching opto-coupler. • Fast switching opto-couplers: tPLH, tPHL ≤ 0.8μs, Use High CMR type. • Slow switching opto-coupler: CTR > 100% • Use 6 isolated control power supplies (VD). Also, care should be taken to minimize the instantaneous voltage charge of the power supply. • Make inductance of DC bus line as small as possible, and minimize surge voltage using snubber capacitor between C1 and E2 terminal.
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MITSUBISHI
PM600DV1A060 FLAT-BASE TYPE INSULATED PACKAGE
PERFORMANCE CURVES
COLLECTOR-EMITTER SATURATION VOLTAGE (VS. Ic) CHARACTERISTICS (TYPICAL)
OUTPUT CHARACTERISTICS (TYPICAL) 2.5
600
COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V)
COLLECTOR CURRENT IC (A)
Tj=25°C
500 VD=13V
400 VD=17V
VD=15V
300
200
100
0
2
1.5
1
0.5
VD=15V Tj=25°C Tj=125°C
0 0.5
1.0
1.5
2.0
2.5
0
200
300
400
500
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION VOLTAGE (VS. VD) CHARACTERISTICS (TYPICAL)
FREE WHEELING DIODE FORWARD CHARACTERISTICS (TYPICAL)
600
600
2.5 Ic=600A
VD=15V
Tj=25°C
500
Tj=125°C
EMITTER CURRENT IE (A)
COLLECTO R-EMITTER SATURATION VOLTAGE VCEsat (V)
100
2.0
1.5
Tj=25°C Tj=125°C
400
300
200
100
0
1.0 12
13
14
15
16
17
0
18
CONTROL VOLTAGE VD (V)
0.5
1
1.5
2
EMITTER-COLLECTOR VOLTAGE VEC (V)
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November. 2011
MITSUBISHI
PM600DV1A060 FLAT-BASE TYPE INSULATED PACKAGE
SWITCHING TIME (ton, toff) CHARACTERISTICS (TYPICAL)
SWITCHING TIME (tc(on), tc(off)) CHARACTERISTICS (TYPICAL)
10
1
SWITCHING TIME tc(on), tc(off) (μs)
toff
1
ton
Vcc=300V VD=15V Tj=25°C Tj=125°C
0.1
tc(on) Vcc=300V VD=15V Tj=25°C Tj=125°C Inductive Load
Inductive Load 0.01
0.1 10
100
10
1000
1000
COLLECTOR CURRENT IC (A)
COLLECTOR CURRENT IC (A)
SWITCHING ENERGY CHARACTERISTICS (TYPICAL)
FREE WHEELING DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL)
35
0.6
Vcc=300V Eoff
VD=15V
30
REVERSE RECOVERY TIME trr (μs)
SWITCHING ENERGY Eon, Eoff (mJ/pulse)
100
Tj=25°C Tj=125°C
25
Inductive Load 20
15
10
Eon
5
0
300
Vcc=300V VD=15V
0.5
Tj=25°C Tj=125°C Inductive Load
Irr
0.4
200
0.3
150
0.2
100
0.1
trr
0
0
200
400
600
800
0
COLLECTOR CURRENT IC (A)
250
200
400
600
50
0 800
REVERSE RECOVERY CURRENT Irr (A)
SWITCHING TIME ton, toff (μs)
tc(off)
EMITTER CURRENT IE (A)
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MITSUBISHI
PM600DV1A060 FLAT-BASE TYPE INSULATED PACKAGE
ID VS. fc CHARACTERISTICS (TYPICAL) 70
16
Vcc=300V 14
VD=15V
VD=15V
60
12
Tj=125°C
Tj=125°C
50
Inductive Load 10 8 6
40
30
20
4
10
2 0
0
0
200
400
600
800
0
5
10
15
20
25
EMITTER CURRENT IE (A)
fc (kHz)
UV TRIP LEVEL VS. Tj CHARACTERISTICS (TYPICAL)
SC TRIP LEVEL VS. Tj CHARACTERISTICS (TYPICAL)
20
2
18
1.8
UVt
SC (SC of Tj=25°C is normalized 1)
UVr
16 14
UVt / UVr (V)
Tj=25°C
Tj=25°C
ID (mA)
REVESE RECOVERY ENERGY Err (mJ/pulse)
FREE WHEELING DIODE REVERSE RECOVERY ENERGY CHARACTERISTICS (TYPICAL)
12 10 8 6 4 2
VD=15V 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0
0 -50
0
50
100
-50
150
Tj (°C)
0
50
100
150
Tj (°C)
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MITSUBISHI
PM600DV1A060 FLAT-BASE TYPE INSULATED PACKAGE
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS
NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j-c)
1
0.1
0.01
Single Pulse IGBT Part; Per unit base: Rth(j-c)Q=0.073 KW FWDi Part; Per unit base: Rth(j-c)D=0.109 K/W 0.001 0.00001 0.0001
0.001
0.01
0.1
1
10
TIME t (sec)
10
November. 2011
