Transcript
http://www.fujielectric.com/products/semiconductor/
6MBI150VX-060-50
IGBT Modules
IGBT MODULE (V series) 600V / 150A / 6 in one package Features Compact Package P.C.Board Mount Low VCE (sat)
Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as welding machines
Maximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25°C unless otherwise specified) Items
Symbols
Inverter
Collector-Emitter voltage Gate-Emitter voltage Collector current
Collector power dissipation Junction temperature
Conditions
VCES VGES Ic Icp -Ic -Ic pulse Pc Tj
Continuous 1ms 1ms 1 device
Tc=80°C Tc=80°C
Maximum ratings 600 ±20 150 300 150 300 485 175
Operating junciton temperature (under switching conditions)
Tjop
150
Case temperature Storage temperature
Tc Tstg
125 -40 to +125
Isolation voltage
between terminal and copper base (*1) Viso between thermistor and others (*2)
AC : 1min.
Screw torque
Mounting (*3)
M5
-
Units V V A W
°C
2500
VAC
3.5
Nm
Note *1: All terminals should be connected together during the test. Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test. Note *3: Recommendable value : 2.5-3.5 Nm (M5)
1
7611a MARCH 2014
6MBI150VX-060-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Electrical characteristics (at Tj= 25°C unless otherwise specified) Items Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage
Symbols
Conditions
ICES IGES VGE (th)
VGE = 0V, VCE = 600V VGE = 0V, VGE = ±20V VCE = 20V, IC = 150mA
VCE (sat) (terminal)
VGE = 15V IC = 150A
VCE (sat) (chip)
VGE = 15V IC = 150A
Rg(int) Cies ton tr tr (i) toff tf
VCE = 10V, VGE = 0V, f = 1MHz
Inverter
Collector-Emitter saturation voltage
Internal gate resistance Input capacitance Turn-on time Turn-off time
VF (terminal)
VCC = 300V IC = 150A VGE = +15 / -15V RG = 9Ω
IF = 150A
Forward on voltage VF (chip)
IF = 150A
Reverse recovery time
trr
Resistance
R
B value
B
IF = 150A T = 25°C T = 100°C T = 25 / 50°C
Items
Symbols
Conditions
Thermal resistance (1device)
Rth(j-c)
Contact thermal resistance (1device) (*4)
Rth(c-f)
Thermistor
Tj=25°C Tj=125°C Tj=150°C Tj=25°C Tj=125°C Tj=150°C
Tj=25°C Tj=125°C Tj=150°C Tj=25°C Tj=125°C Tj=150°C
Characteristics min. typ. max. 1.0 200 6.2 6.7 7.2 2.30 2.75 2.60 2.80 1.60 2.05 1.90 2.10 6 9.7 0.36 1.20 0.25 0.60 0.07 0.52 1.20 0.03 0.45 2.30 2.75 2.20 2.15 1.60 2.05 1.50 1.45 0.35 5000 465 495 520 3305 3375 3450
Units mA nA V
V
Ω nF
µs
V
µs Ω K
Thermal resistance characteristics
Inverter IGBT Inverter FWD with Thermal Compound
Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound.
2
Characteristics min. typ. max. 0.31 0.60 0.05 -
Units °C/W
6MBI150VX-060-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Characteristics (Representative) [ Inverter ] Collector current vs. Collector-Emitter voltage (typ.)
[ Inverter ] Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25oC / chip
Tj= 150oC / chip 300
VGE=20V
VGE=20V
12V 15V
200
Collector current: IC [A]
Collector current: IC [A]
300
10V
100
15V
12V
200 10V
100 8V
8V 0
0 0
1
2
3
4
5
0
3
4
5
Collector-Emitter voltage: VCE [V]
[ Inverter ] Collector current vs. Collector-Emitter voltage (typ.) VGE =15V / chip
[ Inverter ] Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj= 25oC / chip 8
Tj=25°C
Collector - Emitter voltage: VCE [V]
150°C 125°C
200
100
0
6
4
1
2
3
4
5
Ic=300A Ic=150A Ic= 75A
2
0 0
5
10
Collector-Emitter voltage: VCE [V]
Collector - Emitter voltage: VCE [200V/div] Gate - Emitter voltage: VGE [5V/div]
100.0
10.0 Cies
Coes Cres
0.1 0
10
20
30
20
25
[ Inverter ] Dynamic gate charge (typ.) Vcc=300V, Ic=150A, Tj= 25°C
VGE=0V, f= 1MHz, Tj= 25oC
1.0
15
Gate - Emitter voltage: VGE [V]
[ Inverter ] Capacitance vs. Collector-Emitter voltage (typ.)
Capacitance: Cies, Coes, Cres [nF]
2
Collector-Emitter voltage: VCE [V]
300
Collector current: IC [A]
1
40
Collector - Emitter voltage: VCE [V]
VGE
VCE 0
-1200
0
Gate charge: Qg [nC]
3
1200
6MBI150VX-060-50
IGBT Modules
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[ Inverter ] Switching time vs. Collector current (typ.) Vcc=300V, VGE=±15V, Rg=9Ω, Tj= 150°C
10000
1000
Switching time : ton, tr, toff, tf [ nsec ]
Switching time : ton, tr, toff, tf [ nsec ]
[ Inverter ] Switching time vs. Collector current (typ.) Vcc=300V, VGE=±15V, Rg=9Ω, Tj= 125°C
ton
toff tr 100
tf
10 0
100
200
300
10000
1000
ton tr toff
100 tf
10
400
0
Collector current: IC [A]
Switching loss : Eon, Eoff, Err [mJ/pulse ]
Switching time : ton, tr, toff, tf [ nsec ]
toff ton tr 1000
tf
10 10.0
100.0
1000.0
Eon(150°C) Eon(125°C)
10
Eoff(150°C) Eoff(125°C)
8 6 4
Err(150°C) Err(125°C)
2 0 0
50
Collector current: IC [A]
Switching loss : Eon, Eoff, Err [mJ/pulse ]
30
Eoff(150°C) Eoff(125°C)
10 Err(150°C) Err(125°C)
100
200
250
300
400
Eon(150°C) Eon(125°C)
10
150
[ Inverter ] Reverse bias safe operating area (max.) +VGE=15V,-VGE <= 15V, RG >= 9Ω ,Tj = 150°C
40
1
100
Collector current: IC [A]
[ Inverter ] Switching loss vs. gate resistance (typ.) Vcc=300V, Ic=150A, VGE=±15V
0
400
12
Gate resistance : Rg [Ω]
20
300
[ Inverter ] Switching loss vs. Collector current (typ.) Vcc=300V, VGE=±15V, Rg=9Ω
10000
1.0
200
Collector current: IC [A]
[ Inverter ] Switching time vs. gate resistance (typ.) Vcc=300V, Ic=150A, VGE=±15V, Tj= 125°C
100
100
300
200 RBSOA (Repetitive pulse)
100
0 0
1000
100
200
300
400
500
600
700
Collector-Emitter voltage : VCE [V] (Main terminals)
Gate resistance : Rg [Ω]
4
800
6MBI150VX-060-50
[ Inverter ] Forward current vs. forward on voltage (typ.) chip
1000
Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ]
300
Forward current : IF [A]
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
200
Tj=150°C
100
Tj=25°C
Tj=125°C 0 0
1
2
3
4
[ Inverter ] Reverse recovery characteristics (typ.) Vcc=600V, VGE=±15V, Rg=9Ω
Irr(150°C) Irr(125°C) 100
trr(150°C) trr(125°C) 10
5
0
Forward on voltage : VF [V]
[sec] IGBT FWD
150
200
1 2 3 4 0.0023 0.0301 0.0598 0.0708 0.03325 0.08430 0.11910 0.07335 0.06436 0.16317 0.23051 0.14197
1.00
FWD[Inverter]
IGBT[Inverter]
0.10
0.01 0.001
100
[ Thermistor ] Temperature characteristic (typ.)
100
10.00
Resistance : R [kΩ]
Thermal resistanse : Rth(j-c) [ °C/W ]
Transient thermal resistance (max.) n τn rn [°C/W]
50
Forward current : IF [A]
0.010
0.100
10
1
0.1
1.000
-60
-40
-20
0
20
40
60
80
100 120 140 160 180
Temperature [°C ]
Pulse width : Pw [sec]
Outline Drawings(Unit:mm)
Weight: 300g(typ.)
5
6MBI150VX-060-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Equivalent Circuit [ Inverter ]
[ Thermistor ]
WARNING 1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of March 2014. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sure to obtain the latest specifications. 2. A ll applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Device Technology Co., Ltd. is (or shall be deemed) granted. Fuji Electric Device Technology Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3. A lthough Fuji Electric Device Technology Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design fail-safe, flame retardant, and free of malfunction. 4. T he products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements. • Computers • OA equipment • Communications equipment (terminal devices) • Measurement equipment • Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc. 5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric Device Technology Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty. • Transportation equipment (mounted on cars and ships) • Trunk communications equipment • Traffic-signal control equipment • Gas leakage detectors with an auto-shut-off feature • Emergency equipment for responding to disasters and anti-burglary devices • Safety devices • Medical equipment 6. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation). • Space equipment • Aeronautic equipment • Nuclear control equipment • Submarine repeater equipment 7. Copyright ©1996-2014 by Fuji Electric Device Technology Co., Ltd. All rights reserved. No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Device Technology Co., Ltd. 8. If you have any question about any portion in this Catalog, ask Fuji Electric Device Technology Co., Ltd. or its sales agents before using the product. Neither Fuji Electric Device Technology Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions set forth herein.
6
Technical Information
IGBT Modules
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