Transcript
PD - 93955A
LOGIC LEVEL HEXFET® POWER MOSFET SURFACE MOUNT (SMD-0.5)
IRL5NJ024 55V, N-CHANNEL
Product Summary Part Number IRL5NJ024
RDS(on) 0.06Ω
BVDSS
55V
ID 17A
Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. These devices are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits.
SMD-0.5
Features: n n n n n n n n n
Logic Level Gate Drive Low RDS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Light Weight
Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG
Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Package Mounting Surface Temperature Weight
Units 17 11 68 35 0.28 ±16 56 11 3.5 4.3 -55 to 150
A W W/°C
V mJ A mJ V/ns o
C
300 (for 5 s) 2.6
g
For footnotes refer to the last page
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IRL5NJ024
Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
Qg Qgs Qgd td(on) tr td(off) tf LS + LD
Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
Min. 55 ––– ––– ––– ––– 1.0 6.5 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– –––
Ciss
Input Capacitanc
–––
Typ. Max. Units Conditions ––– ––– V VGS = 0V, ID = 250µA 0.057 ––– V/°C Reference to 25°C, ID = 1mA ––– 0.060 VGS = 10V, ID = 11A ––– 0.075 Ω VGS = 5.0V, ID = 11A ––– 0.105 VGS = 4.0V, ID = 9.0A ––– 2.0 V VDS = VGS, ID = 250µA ––– ––– S VDS = 25V, ID = 11 A ––– 25 VDS = 55V, VGS = 0V µA ––– 250 VDS = 44V, VGS = 0V, TJ = 125°C ––– 100 VGS = 16V nA ––– -100 VGS = -16V ––– 15 ID = 11A ––– 3.7 nC VDS = 44V ––– 8.5 VGS = 5.0V ––– 11 VDD = 28V ––– 133 ID = 11A ns ––– 35 RG = 12 Ω ––– 66 VGS = 5.0V 4.0 ––– nH Measured from the center of drain pad to center of source pad 514 ––– VGS = 0V, VDS = 25V
Coss
Output Capacitance
–––
137
–––
Crss
Reverse Transfer Capacitance
–––
51
–––
V(BR)DSS
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th) gfs
Gate Threshold Voltage Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
pF
ƒ = 1.0MHz
Source-Drain Diode Ratings and Characteristics Parameter
Min Typ Max Units
IS ISM
Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀
— —
— —
17 68
A
VSD t rr Q RR
Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
— — —
— — —
1.3 90 200
V nS nC
ton
Forward Turn-On Time
Test Conditions
Tj = 25°C, IS = 11A, VGS = 0V ➃ Tj = 25°C, IF = 11A, di/dt ≤ 100A/µs VDD ≤ 25V ➃
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance Parameter RthJC
Junction-to-Case
Min Typ Max Units —
—
3.57
Test Conditions
°C/W
Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page
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IRL5NJ024
1000
100
VGS 15V 12V 10V 7.0V 5.0V 4.5V 2.7V BOTTOM 2.0V
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
100
10
1
2.0V 0.1
20µs PULSE WIDTH T = 25 C °
J
0.01 0.1
1
10
10
0.1 2.0
15 25V V DS = 50V 20µs PULSE WIDTH
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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R DS(on) , Drain-to-Source On Resistance (Normalized)
I D , Drain-to-Source Current (A)
1
10
100
Fig 2. Typical Output Characteristics
2.5
10
°
J
1
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
TJ = 150 ° C
20µs PULSE WIDTH T = 150 C
0.1 0.1
100
TJ = 25 ° C
2.0V
1
VDS , Drain-to-Source Voltage (V)
100
VGS 15V 12V 10V 7.0V 5.0V 4.5V 2.7V BOTTOM 2.0V TOP
TOP
ID = 17A
2.0
1.5
1.0
0.5
0.0 -60 -40 -20
VGS = 10V 0
20
40
60
80 100 120 140 160
TJ , Junction Temperature( °C)
Fig 4. Normalized On-Resistance Vs. Temperature
3
IRL5NJ024
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
C, Capacitance (pF)
800
600
Ciss
400
Coss
200
C rss
12
VGS , Gate-to-Source Voltage (V)
1000
1
10
8
6
4
2
FOR TEST CIRCUIT SEE FIGURE 13
10
0
100
4
8
12
16
20
24
QG , Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
1000
ID , Drain-to-Source Current (A)
100
ISD , Reverse Drain Current (A)
VDS = 44V VDS = 27V VDS = 11V
0
0
TJ = 150 ° C TJ = 25 ° C
1
V GS = 0 V 0.6
OPERATION IN THIS AREA LIMITED BY R DS(on)
100
10
0.1 0.2
1.0
1.4
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
4
ID = 11A
1.8
10 100µs 1ms
1 Tc = 25°C Tj = 150°C Single Pulse
10ms
0.1 1
10
100
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRL5NJ024
20
RD
VDS
I D , Drain Current (A)
VGS
D.U.T.
15
RG
10
Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %
+
-VDD
VGS
Fig 10a. Switching Time Test Circuit 5
VDS 90% 0 25
50
75
100
125
150
TC , Case Temperature ( ° C)
10% VGS td(on)
Fig 9. Maximum Drain Current Vs. Case Temperature
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
D = 0.50
0.20
0.10
1
P DM
0.05 0.02 0.01
0.1 0.00001
t1
SINGLE PULSE (THERMAL RESPONSE)
t2
Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRL5NJ024
15V
L
VDS
D .U .T.
RG
IA S
VGS 20V
D R IV E R
+ - VD D
0 .01 Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
A
EAS , Single Pulse Avalanche Energy (mJ)
100
TOP
80
BOTTOM
ID 5.0A 7.0A 11A
60
40
20
0 25
50
75
100
125
150
Starting TJ , Junction Temperature ( ° C)
V (B R )D S S tp
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
IAS Current Regulator Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
QG
12V
.2µF .3µF
5.0V QGS
QGD
+ V - DS
VGS
VG
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
6
D.U.T.
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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IRL5NJ024
Footnotes: Repetitive Rating; Pulse width limited by
ISD ≤ 11A, di/dt ≤ 230 A/µs,
maximum junction temperature. VDD = 25 V, Starting TJ = 25°C, L=0.9mH Peak IAS =11A, VGS = 5.0 V, RG= 25Ω
Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
VDD ≤ 55V, TJ ≤ 150°C
Case Outline and Dimensions — SMD-0.5
PAD ASSIGNMENTS
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 07/01
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