Transcript
GU-E PhotoMOS (AQV210E, AQV21PEH) (Standard type)
General use and economy type. DIP (1 Form A) 6-pin type. Reinforced insulation 5,000V type.
TESTING
(Reinforced type)
GU-E PhotoMOS (AQV21PE, AQV21PEH)
FEATURES 6.4 .252
8.8 .346
3.9 .154 6.4 .252
8.8 .346
3.6 .142
mm inch
1
6
2
5
3
4
1. Controls low-level analog signals PhotoMOS relays feature extremely low closed-circuit offset voltage to enable control of low-level analog signals without distortion. 2. Controlled with low-level input signals 3. Controls various types of loads such as relays, motors, lamps and solenoids. 4. Optical coupling for extremely high isolation Unlike mechanical relays, the PhotoMOS relay combines LED and optoelectronic device to transfer signals using light for extremely high isolation. 5. Eliminates the need for a counter electromotive force protection diode in the drive circuits on the input side
6. Stable on-resistance 7. Low-level off state leakage current 8. Eliminates the need for a power supply to drive the power MOSFET A power supply used to drive the power MOSFET is unnecessary because of the built-in optoelectronic device. This results in easy circuit design and small PC board area. 9. Low thermal electromotive force (Approx. 1 μV)
TYPICAL APPLICATIONS • High-speed inspection machines • Telephone equipment • Data communication equipment • Computer
TYPES Part No. Output rating* Type
I/O isolation Load voltage Standard 1,500 V AC
AC/DC Reinforced 5,000 V
Load current
Through hole terminal
Packing quantity
Surface-mount terminal Tape and reel packing style
Tube packing style
Picked from the 1/2/3-pin side
Picked from the 4/5/6-pin side
350 V
130 mA
AQV210E
AQV210EA
AQV210EAX
AQV210EAZ
400 V
120 mA
AQV214E
AQV214EA
AQV214EAX
AQV214EAZ
350 V
130 mA
AQV210EH
AQV210EHA
AQV210EHAX
AQV210EHAZ
400 V
120 mA
AQV214EH
AQV214EHA
AQV214EHAX
AQV214EHAZ
Tube
Tape and reel
1 tube contains 50 pcs. 1 batch contains 500 pcs.
1,000 pcs.
*Indicate the peak AC and DC values. Note: For space reasons, the SMD terminal shape indicator “A” and the package style indicator “X” or “Z” are not marked on the relay.
RATING 1. Absolute maximum ratings (Ambient temperature: 25°C 77°F) Type of Symconnecbol tion
Item
Input
AQV210E(A)
AQV214E(A)
AQV210EH(A)
LED forward current
IF
50 mA
LED reverse voltage
VR
5V
Peak forward current
IFP
1A
Power dissipation
Pin
75 mW
Load voltage (peak AC)
VL A
Continuous load current
IL
Output Peak load current
Ipeak
Power dissipation
Pout
Total power dissipation
PT
I/O isolation voltage
Viso
Temperature limits
Remarks
f = 100 Hz, Duty factor = 0.1%
350 V
400 V
350 V
400 V
0.13 A
0.12 A
0.13 A
0.12 A
B
0.15 A
0.13 A
0.15 A
0.13 A
C
0.17 A
0.15 A
0.17 A
0.15 A
0.4 A
0.3 A
0.4 A
0.3 A
A connection: Peak AC, DC; B, C connection: DC A connection: 100 ms (1 shot), VL=DC
500 mW 550 mW 1,500 V AC
5,000 V AC
Operating
Topr
–40°C to +85°C –40°F to +185°F
Storage
Tstg
–40°C to +100°C –40°F to +212°F
ds_x615_en_aqv21e: 181206J
AQV214EH(A)
Non-condensing at low temp.
1
GU-E PhotoMOS (AQV210E, AQV21PEH) 2. Electrical characteristics (Ambient temperature: 25°C 77°F) Item LED operate current Input
LED turn off current LED dropout voltage
Typical Maximum Minimum Typical Typical Maximum
Symbol
Type of connection
IFon
—
IFoff
—
VF
—
Ron
A
AQV210E(A)
0.3 mA
0.4 mA
1.0 mA
1.5 mA
Ron
C
Maximum Typical Maximum
30 Ω
Condition IL = Max. IL = Max. IF = 50 mA
1.5 V
Typical
Output
1.6 mA
1.25 V (1.14 V at IF = 5 mA)
Maximum B
AQV214EH(A)
3 mA
23 Ω
Ron
AQV210EH(A)
1.1 mA
Typical
On resistance
AQV214E(A)
23 Ω
30 Ω
35 Ω
50 Ω
35 Ω
50 Ω
11.5 Ω
22.5 Ω
11.5 Ω
22.5 Ω
17.5 Ω
25 Ω
17.5 Ω
25 Ω
6.0 Ω
11.3 Ω
6.0 Ω
11.3 Ω
8.8 Ω
12.5 Ω
8.8 Ω
12.5 Ω
IF = 5 mA IL = Max. Within 1 s on time IF = 5 mA IL = Max. Within 1 s on time IF = 5 mA IL = Max. Within 1 s on time
Output capacitance
Typical
Cout
A
45 pF
IF = 0 mA VB = 0 V f = 1 MHz
Off state leakage current
Maximum
—
—
1 μA
IF = 0 mA VL = Max.
Ton
—
Toff
—
Ciso
—
Riso
—
Switching speed Transfer characteristics
Turn on time*
Typical
Turn off time*
Typical
I/O capacitance Initial I/O isolation resistance
Maximum Maximum Typical Maximum Minimum
0.5 ms
0.7 ms
IF = 0 mA › 5 mA** lL = Max.
2.0 ms 0.05 ms
IF = 0 mA › 5 mA IL = Max.
1.0 ms 0.8 pF 1.5 pF
f = 1 MHz VB = 0 V
1,000 MΩ
500 V DC
*Turn on/Turn off time
Type of connection
Input
90% Output
10% Ton
Toff
** Recommendable LED forward current Standard type: IF = 5 mA Reinforced type: IF = 5 to 10 mA
Q Dimensions Q Schematic and Wiring Diagrams Q Cautions for Use
REFERENCE DATA 1. Load current vs. ambient temperature characteristics
2. On-resistance vs. ambient temperature characteristics
3. Turn on time vs. ambient temperature characteristics
Allowable ambient temperature: –40°C to +85°C –40°F to +185°F Type of connection:A
Measured portion: between terminals 4 and 6; LED current: 5 mA; Load voltage: Max. (DC); Continuous load current: Max. (DC)
LED current: 5 mA; Load voltage: Max. (DC); Continuous load current: Max. (DC) 2.0
AQV214E (H)
40
100 80 60
30
AQV210E (H)
20
Turn on time, ms
Load current, mA
120
50
AQV210E (H) AQV214E (H) On resistance,Ω
140
1.6
AQV210EH, AQV214EH
1.2 0.8
AQV210E
40 10
20 0 -40
2
-20
0
20 40 60 8085 100 Ambient temperature, °C
0
0.4
-40
-20
0 20 40 60 8085 Ambient temperature, °C
0
AQV214E
-40
-20
0 20 40 60 80 85 Ambient temperature, °C
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GU-E PhotoMOS (AQV210E, AQV21PEH) 4. Turn off time vs. ambient temperature characteristics
5. LED operate current vs. ambient temperature characteristics
6. LED turn off current vs. ambient temperature characteristics
LED current: 5 mA; Load voltage: Max. (DC); Continuous load current: Max. (DC)
Load voltage: Max. (DC); Continuous load current: Max. (DC)
Load voltage: Max. (DC); Continuous load current: Max. (DC)
0.3
0.2
AQV214E AQV210EH, AQV214EH
0.1
LED turn off current, mA
LED operate current, mA
Turn off time, ms
5
5
0.4
4
3
AQV210EH, AQV214EH
2
4
3 AQV210EH, AQV214EH 2
AQV210E,AQV214E
1
AQV210E,AQV214E
1
AQV210E 0
-40
-20
0
0 20 40 60 8085 Ambient temperature,°C
-40
-20
0
0 20 40 60 8085 Ambient temperature, °C
-40
-20
0 20 40 60 8085 Ambient temperature, °C
7. LED dropout voltage vs. ambient temperature characteristics
8. Current vs. voltage characteristics of output at MOS portion
9. Off state leakage current vs. load voltage characteristics
Sample: All types LED current: 5 to 50 mA
Measured portion: between terminals 4 and 6; Ambient temperature: 25°C 77°F
Measured portion: between terminals 4 and 6; Ambient temperature: 25°C 77°F
1.4 1.3 50mA 1.2
-5
-4
-3
30mA 20mA
1.1
10mA 5mA
1.0 0
-40
-20
0 20 40 60 80 85 Ambient temperature, °C
-2
-1
140 120 100 80 60 40 20
AQV210E(H)
AQV214E(H)
1 -20 -40 -60 -80 -100 -120 -140
2 3 4 Voltage, V
5
Off state leakage current, A
Current, mA
LED dropout voltage, V
1.5
10-3
-6
10
10-9
AQV214E(H) AQV210E(H)
10-12 0
20
60 40 80 Load voltage, V
100
10-(1). Turn on time vs. LED forward current characteristics
10-(2). Turn on time vs. LED forward current characteristics
11-(1). Turn off time vs. LED forward current characteristics
Measured portion: between terminals 4 and 6; Load voltage: Max. (DC); Continuous load current: Max. (DC); Ambient temperature: 25°C 77°F
Measured portion: between terminals 4 and 6; Load voltage: Max. (DC); Continuous load current: Max. (DC); Ambient temperature: 25°C 77°F
Measured portion: between terminals 4 and 6; Load voltage: Max. (DC); Continuous load current: Max. (DC); Ambient temperature: 25°C 77°F
1.4
0.8 0.6
0.10
2.0
0.08
AQV214E
Turn off time, ms
1.0
Turn on time, ms
Turn on time, ms
1.2
2.5
AQV210E
1.5 1.0
0.06
AQV214E
0.04
AQV210E
0.4 0.5
0.2 0
10
50 20 30 40 LED forward current, mA
0
60
0.02
AQV210EH, AQV214EH 10
20 30 40 50 LED forward current, mA
60
11-(2). Turn off time vs. LED forward current characteristics
12. Output capacitance vs. applied voltage characteristics
Measured portion: between terminals 4 and 6; Load voltage: Max. (DC); Continuous load current: Max. (DC); Ambient temperature: 25°C 77°F
Measured portion: between terminals 4 and 6; Frequency: 1 MHz; Ambient temperature: 25°C 77°F
0.15
0.10 AQV210EH, AQV214EH
Output capacitance, pF
0.20 Turn off time, ms
10
20 30 40 50 LED forward current, mA
50
0.25
40
30
20
10
0.05 0
0
10
20 30 40 50 LED forward current, mA
ds_x615_en_aqv21e: 181206J
0
0
10
20 30 40 Applied voltage, V
50
3