Transcript
AO4629 30V Complementary MOSFET
General Description
Product Summary
AO4629 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications.
N-Channel VDS= 30V
P-Channel -30V
ID= 6A (VGS=10V)
-5.5A (VGS=-10V)
RDS(ON)
RDS(ON)
< 30mΩ (VGS=10V)
< 41mΩ (VGS=-10V)
< 42mΩ (VGS=4.5V)
< 74mΩ (VGS=-4.5V)
100% UIS Tested 100% Rg Tested
100% UIS Tested 100% Rg Tested
SOIC-8 D2 Top View
D1
Bottom View Top View S2 G2 S1 G1
1 2 3 4
8 7 6 5
D2 D2 D1 D1
G2
G1 S2
n-channel
Pin1
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max n-channel Drain-Source Voltage VDS 30 Gate-Source Voltage
VGS TA=25°C
Continuous Drain Current Pulsed Drain Current
ID
TA=70°C C
S1
p-channel
Max p-channel -30
Units V
±20
±20
V
6
-5.5
5
-4.5
A
IDM
30
-25
Avalanche Current C
IAS, IAR
10
17
A
Avalanche energy L=0.1mH C
EAS, EAR
5
14
mJ
TA=25°C Power Dissipation B
PD
TA=70°C
Junction and Storage Temperature Range Thermal Characteristics Parameter A Maximum Junction-to-Ambient AD Maximum Junction-to-Ambient Maximum Junction-to-Lead
Rev 2: Nov 2011
Steady-State Steady-State
2 1.3
TJ, TSTG
Symbol t ≤ 10s
2 1.3
RθJA RθJL
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-55 to 150
Typ 48 74 32
W °C
Max 62.5 90 40
Units °C/W °C/W °C/W
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AO4629
N-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol
Parameter
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS
Zero Gate Voltage Drain Current
Min
Conditions ID=250µA, VGS=0V
V
TJ=55°C
5
Gate-Body leakage current
VDS=0V, VGS= ±20V
Gate Threshold Voltage On state drain current
VDS=VGS ID=250µA
1.2
VGS=10V, VDS=5V
30
VGS=10V, ID=6A
100
nA
2.4
V
25
30
40
48 42
A
Static Drain-Source On-Resistance VGS=4.5V, ID=5A
33
gFS
Forward Transconductance
VDS=5V, ID=6A
15
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.76
IS
Maximum Body-Diode Continuous Current
TJ=125°C
DYNAMIC PARAMETERS Ciss Input Capacitance Crss
Reverse Transfer Capacitance
Rg
Gate resistance
255 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz
mΩ mΩ S
1
V
2.5
A
310
45 1.6
µA
1.8
RDS(ON)
Output Capacitance
Units
1
VGS(th)
Coss
Max
30
VDS=30V, VGS=0V
uses ID(ON)
Typ
pF pF
35
50
pF
3.25
4.9
Ω
SWITCHING PARAMETERS Qg(10V) Total Gate Charge
4
5.2
6.3
nC
Qg(4.5V) Total Gate Charge
2
2.55
3.2
nC
VGS=10V, VDS=15V, ID=6A
Qgs
Gate Source Charge
0.85
nC
Qgd
Gate Drain Charge
1.3
nC
tD(on)
Turn-On DelayTime
4.5
ns
tr
Turn-On Rise Time
2.5
ns
tD(off)
Turn-Off DelayTime
14.5
ns
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=6A, dI/dt=100A/µs
8.5
12
Qrr
Body Diode Reverse Recovery Charge IF=6A, dI/dt=100A/µs
2.2
3
VGS=10V, VDS=15V, RL=2.5Ω, RGEN=3Ω
3.5
ns ns nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 2: Nov 2011
www.aosmd.com
Page 2 of 9
AO4629
N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30
15 10V
VDS=5V
25
4.5V
6V
4V
9 ID(A)
ID (A)
20
12
15 3.5V
6
125°C
10 3
5
25°C
VGS=3V 0
0 0
1
2
3
4
5
0.5
VDS (Volts) Fig 1: On-Region Characteristics (Note E)
2
2.5
3
3.5
4
4.5
Normalized On-Resistance
2
40 VGS=4.5V RDS(ON) (mΩ Ω)
1.5
VGS(Volts) Figure 2: Transfer Characteristics (Note E)
45
35 30 25 VGS=10V
20 15
VGS=10V ID=6A
1.8 1.6
17 5 2 VGS=4.5V 10 I =5A
1.4 1.2
D
1 0.8
0
2
4
6 8 10 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E)
0
100
25
50
75 100 125 150 175 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E)
1.0E+02 ID=6A
1.0E+01
40
80
1.0E+00 IS (A)
RDS(ON) (mΩ Ω)
1
60 125°C
1.0E-01
125°C
25°C
1.0E-02 1.0E-03
40 25°C
1.0E-04
20
1.0E-05 2
6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E)
Rev 2: Nov 2011
4
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0.0
0.2
0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E)
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AO4629
N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10
500 VDS=15V ID=6A 400 Ciss
Capacitance (pF)
VGS (Volts)
8
6
4
300
200 Coss
2
100
0
0 0
1
2
3 4 5 Qg (nC) Figure 7: Gate-Charge Characteristics
0
6
100.0
Crss 5 10 V (Volts) 15 20 25 DS Figure 8: Capacitance Characteristics
30
1000 TA=25°C
10µs RDS(ON) limited
100
100µs 1ms
1.0
10ms 0.1
TJ(Max)=150°C TA=25°C
Power (W)
ID (Amps)
10.0
10
10s
DC
1
0.0 0.01
0.1
1 VDS (Volts)
10
100
Figure 9: Maximum Forward Biased Safe Operating Area (Note F)
0.00001
0.001
0.1
10
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note F)
Zθ JA Normalized Transient Thermal Resistance
10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1
RθJA=90°C/W
0.1
PD
0.01 Single Pulse
Ton
T
0.001 0.00001
Rev 2: Nov 2011
0.0001
0.001
0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
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100
1000
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AO4629
Gate Charge Test Circuit & W aveform Vgs Qg 10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT Vgs Ig
Charge
Resistive Switching Test Circuit & W aveforms RL Vds Vds
Vgs
90%
+ Vdd
DUT
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
ton
tf toff
Unclamped Inductive Switching (UIS) Test Circuit & W aveforms L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT Vgs
Vgs
Diode Recovery Test Circuit & Waveforms Q rr = - Idt
Vds + DUT Vgs
Vds Isd Vgs Ig
Rev 2: Nov 2011
L
Isd
+ Vdd
t rr
dI/dt I RM Vdd
VDC
-
IF
Vds
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Page 5 of 9
AO4629
P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol
Parameter
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=-250µA, VGS=0V VDS=-30V, VGS=0V
-30
Gate-Body leakage current
VDS=0V, VGS= ±20V
VGS(th)
Gate Threshold Voltage On state drain current
VDS=VGS ID=-250µA VGS=-10V, VDS=-5V VGS=-10V, ID=-5.5A
Static Drain-Source On-Resistance
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS
Maximum Body-Diode Continuous Current
-1.5
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
V
VGS=-4.5V, ID=-4.5A VDS=-5V, ID=-5.5A IS=-1A,VGS=0V
100
nA
-2.5
V
32
41
47
58
51
74
A
13 -0.76
VGS=0V, VDS=0V, f=1MHz
mΩ S V
-2.5
A pF
100
pF
65
pF Ω
7.5
11.5
SWITCHING PARAMETERS Qg(10V) Total Gate Charge
9.2
11
nC
Qg(4.5V) Total Gate Charge
4.6
6
nC
VGS=-10V, VDS=-15V, ID=-5.5A
3.5
mΩ
-1
520 VGS=0V, VDS=-15V, f=1MHz
µA
-2
-25
DYNAMIC PARAMETERS Ciss Input Capacitance Coss
Units
-5
TJ=125°C
RDS(ON)
Max
-1
TJ=55°C
uses ID(ON)
Typ
Qgs
Gate Source Charge
1.6
nC
Qgd
Gate Drain Charge
2.2
nC
tD(on)
Turn-On DelayTime
7.5
ns
tr
Turn-On Rise Time
5.5
ns
tD(off)
Turn-Off DelayTime
19
ns
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
Qrr
VGS=-10V, VDS=-15V, RL=2.7Ω, RGEN=3Ω
7
ns
IF=-5.5A, dI/dt=500A/µs
11
Body Diode Reverse Recovery Charge IF=-5.5A, dI/dt=500A/µs
5.3
ns nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 2: Nov 2011
www.aosmd.com
Page 6 of 9
AO4629
P-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30
25 -10V
-5V -8V
20
VDS=-5V
25
-4.5V
20 -ID(A)
-ID (A)
15 -4V
15
10 10 5
VGS=-3.5V
125°C
5
25°C
0
0 0
1
2
3
4
5
0.5
-VDS (Volts) Fig 1: On-Region Characteristics (Note E)
1.5
2
2.5
3
3.5
4
4.5
5
5.5
-VGS(Volts) Figure 2: Transfer Characteristics (Note E)
80 Normalized On-Resistance
1.8
70 VGS=-4.5V
60 RDS(ON) (mΩ Ω)
1
50 40 30 VGS=-10V
20 10
VGS=-10V ID=-5.5A
1.6 1.4
17 5 2 10 VGS=-4.5V
1.2 1
ID=-4.5A
0.8 0
2
4 6 8 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E)
0
120
25
50
75 100 125 150 175 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E)
1.0E+02 ID=-5.5A
1.0E+01
100
40
80
-IS (A)
RDS(ON) (mΩ Ω)
1.0E+00
60
125°C
1.0E-01 125°C 1.0E-02
25°C
1.0E-03 40 1.0E-04 25°C 20
1.0E-05 2
6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E)
Rev 2: Nov 2011
4
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0.0
0.2
0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E)
Page 7 of 9
AO4629
P-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10
800 VDS=-15V ID=-5.5A
700
Ciss
600 Capacitance (pF)
-VGS (Volts)
8
6
4
500 400 300 Coss 200
2 100 Crss 0
0 0
2 4 g (nC) 6 8 Q Figure 7: Gate-Charge Characteristics
0
10
5 10 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics
30
1000
100.0
TA=25°C
10µs RDS(ON) 100µs 1ms
1.0
10ms 0.1
TJ(Max)=150°C TA=25°C
100
Power (W)
-ID (Amps)
10.0
10
10s
DC
0.0
1 0.01
0.1
1 -VDS (Volts)
10
100
0.00001
Figure 9: Maximum Forward Biased Safe Operating Area (Note F)
0.001
0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note F)
Zθ JA Normalized Transient Thermal Resistance
10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=90°C/W
0.1 PD
0.01
Single Pulse Ton
T
0.001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 2: Nov 2011
www.aosmd.com
Page 8 of 9
AO4629
Gate Charge Test Circuit & W aveform Vgs Qg -10V
-
-
VDC
+
VDC
Qgs
Vds
Qgd
+
DUT Vgs Ig
Charge
Resistive Switching Test Circuit & Waveforms RL Vds
toff
ton
Vgs
-
DUT
Vgs
VDC
td(on)
td(off)
tr
tf
90%
Vdd
+
Rg
Vgs
10% Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2
L
E AR= 1/2 LIAR
Vds Vds
Id
-
Vgs
Vgs
VDC
+
Rg
BVDSS Vdd Id I AR
DUT Vgs
Vgs
Diode Recovery Test Circuit & Waveforms Q rr = - Idt
Vds + DUT
Vds -
Isd Vgs
Ig
Rev 2: Nov 2011
Vgs
L
-Isd
+ Vdd
t rr
dI/dt -I RM Vdd
VDC
-
-I F
-Vds
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Page 9 of 9
