Transcript
AO4312 36V N-Channel MOSFET
General Description
Product Summary
The AO4312 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.Power losses are minimized due to an extremely low combination of RDS(ON) and Crss.In addition,switching behavior is well controlled with a "Schottky style" soft recovery body diode.
VDS
36V 23A
ID (at VGS=10V) RDS(ON) (at VGS=10V)
< 4.5mΩ
RDS(ON) (at VGS = 4.5V)
< 6.2mΩ
100% UIS Tested 100% Rg Tested
SOIC-8 Top View D D
D Bottom View
D D G G S
S S S
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage
VGS TA=25°C
Continuous Drain Current Pulsed Drain Current
C
Units V
±20
V
23
ID
TA=70°C
Maximum 36
18
A
264
IDM
Avalanche Current C
IAS, IAR
45
A
Avalanche energy L=0.1mH C TA=25°C
EAS, EAR
101
mJ
Power Dissipation B
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead
Rev 0: December 2010
4.2
PD
TA=70°C
Steady-State Steady-State
-55 to 150
TJ, TSTG
Symbol t ≤ 10s
W
2.7
RθJA RθJL
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Typ 25 50 12
°C
Max 30 60 15
Units °C/W °C/W °C/W
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AO4312
Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol
Parameter
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
Max
1 TJ=55°C
µA
5
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±20V
Gate Threshold Voltage
VDS=VGS ID=250µA
1.3
ID(ON)
On state drain current
VGS=10V, VDS=5V
264
Units V
36
VDS=36V, VGS=0V
VGS(th)
100
nA
1.8
2.3
V
3.4
4.5
5.2
6.9
VGS=4.5V, ID=20A
4.5
6.2
VGS=10V, ID=20A RDS(ON)
Typ
Static Drain-Source On-Resistance
TJ=125°C
A
gFS
Forward Transconductance
VDS=5V, ID=20A
110
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.7
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS Ciss Input Capacitance
mΩ mΩ S
1
V
5.5
A
1560
1952
2345
pF
VGS=0V, VDS=18V, f=1MHz
475
685
890
pF
14
50
85
pF
VGS=0V, VDS=0V, f=1MHz
0.5
1.1
1.6
Ω
SWITCHING PARAMETERS Qg(10V) Total Gate Charge
22
27.8
34
nC
Qg(4.5V) Total Gate Charge
10
12.7
17
nC
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
VGS=10V, VDS=18V, ID=20A
VGS=10V, VDS=18V, RL=0.9Ω, RGEN=3Ω
4.3
nC
4.7
nC
7
ns
3.1
ns
26
ns
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=20A, dI/dt=500A/µs
13
17
21
ns
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
30
38.5
47
4.5
ns nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: December 2010
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AO4312
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100
100
4V
10V 4.5V
VDS=5V
3.5V
80
80
60 ID(A)
ID (A)
60 3V
40
40
20
125°C 25°C
20
VGS=2.5V
0
0 0
1
2
3
4
0
5
18 Normalized On-Resistance
14 RDS(ON) (mΩ Ω)
2
3
4
5
6
2
16 VGS=4.5V
12 10 8
VGS=10V
6 4 2
1.8
VGS=10V ID=20A
1.6
17 5 2 10 =4.5V
1.4 1.2
VGS ID=20A
1 0.8
0 0
5
0
10
15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E)
25
50
75
100
125
150
175
200
0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E)
12
1.0E+02 ID=20A
1.0E+01
40
9
1.0E+00 125°C
IS (A)
RDS(ON) (mΩ Ω)
1
VGS(Volts) Figure 2: Transfer Characteristics (Note E)
VDS (Volts) Fig 1: On-Region Characteristics (Note E)
6
125°C
1.0E-01 1.0E-02
25°C 1.0E-03
3 25°C
1.0E-04 1.0E-05
0 2
4
6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E)
Rev 0: December 2010
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts) Figure 6: Body-Diode Characteristics (Note E)
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AO4312
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 2800 VDS=18V ID=20A
2400 Ciss Capacitance (pF)
VGS (Volts)
8
6
4
2000 1600 1200 Coss 800
2 400 0
0 0
5
10
15 20 25 Qg (nC) Figure 7: Gate-Charge Characteristics
30
0
1000.0 IAR (A) Peak Avalanche Current
Crss
6 12 18 24 30 VDS (Volts) Figure 8: Capacitance Characteristics
36
1000.0
TA=25°C
10µs
TA=100°C 100.0
ID (Amps)
100.0 TA=150°C
100µs
RDS(ON) limited
10.0
1ms 10ms
1.0
100ms
TA=125°C
10.0
TJ(Max)=150°C TA=25°C
0.1
10s
DC
0.0
1.0 1
0.01
10 100 1000 Time in avalanche, tA (µ µs) Figure 12: Single Pulse Avalanche capability (Note C)
0.1
1 VDS (Volts)
10
100
Figure 10: Maximum Forward Biased Safe Operating Area (Note F)
10000 TA=25°C
Power (W)
1000
100
10
1 0.00001
0.001
0.1
10
1000
Pulse Width (s) Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F)
Rev 0: December 2010
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AO4312
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Zθ JA Normalized Transient Thermal Resistance
10
1
D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=60°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)
4
Rev 0: December 2010
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AO4312
Gate Charge Test Circuit & Waveform Vgs Qg 10V
+ + Vds
VDC
-
Qgs
Qgd
VDC
-
DUT Vgs Ig
Charge
Resistive Switching Test Circuit & Waveforms RL Vds Vds 90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT Vgs
Vgs
Diode Recovery Test Circuit & Waveforms Q rr = - Idt
Vds + DUT
Vds Isd Vgs Ig
Rev 0: December 2010
Vgs
L
Isd
+ Vdd
t rr
dI/dt I RM Vdd
VDC
-
IF
Vds
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