Transcript
AO3402 30V N-Channel MOSFET
General Description
Product Summary
The AO3402 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.
ID (at VGS=10V)
VDS
30V 4A
RDS(ON) (at VGS=10V)
< 52mΩ
RDS(ON) (at VGS =4.5V)
< 65mΩ
RDS(ON) (at VGS =2.5V)
< 85mΩ
SOT23 Top View
D
Bottom View
D
D
G
S
G S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage
VGS TA=25°C
Continuous Drain Current Pulsed Drain Current Power Dissipation
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead
Rev 6: Jan. 2011
Steady-State Steady-State
A
1.4
W
0.9
TJ, TSTG
Symbol t ≤ 10s
V
15
PD
TA=70°C
±12 3.2
IDM TA=25°C
B
Units V
4
ID
TA=70°C C
Maximum 30
RθJA RθJL
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-55 to 150
Typ 70 100 63
°C
Max 90 125 80
Units °C/W °C/W °C/W
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AO3402
Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol
Parameter
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V TJ=55°C
µA
5
Gate-Body leakage current
VDS=0V, VGS=±12V
Gate Threshold Voltage
VDS=VGS ID=250µA
0.5
ID(ON)
On state drain current
VGS=10V, VDS=5V
15
Units V
1
VGS(th)
±100
nA
1
1.5
V
43
52
70
84
VGS=4.5V, ID=3A
47
65
mΩ
VGS=2.5V, ID=2A
60
85
mΩ
14 1
V
1.5
A
VGS=10V, ID=4A Static Drain-Source On-Resistance
Max
30
VDS=30V, VGS=0V
IGSS
RDS(ON)
Typ
TJ=125°C
gFS
Forward Transconductance
VDS=5V, ID=3.6A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS Ciss Input Capacitance
A
0.75
mΩ
S
185
235
285
pF
25
35
45
pF
10
18
25
pF
2.1
4.3
6.5
Ω
SWITCHING PARAMETERS Qg(10V) Total Gate Charge
10
12
Qg(4.5V) Total Gate Charge
4.7
nC
0.95
nC
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Qgs
Gate Source Charge
VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=15V, ID=4A
nC
Qgd
Gate Drain Charge
1.6
nC
tD(on)
Turn-On DelayTime
3.5
ns
tr
Turn-On Rise Time
1.5
ns
tD(off)
Turn-Off DelayTime
17.5
ns
tf
Turn-Off Fall Time
2.5
ns
trr Qrr
VGS=10V, VDS=15V, RL=3.75Ω, RGEN=3Ω IF=4A, dI/dt=100A/µs
Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=4A, dI/dt=100A/µs
8.5
11
2.6
3.5
ns nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 6: Jan. 2011
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AO3402
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15
10 10V
VDS=5V
3V 2.5V
12
8
4.5V 9 ID(A)
ID (A)
6
125°C
4
6 VGS=2.0V 3
2
0
0 0
1
2
3
4
25°C
0
5
80
1
1.5
2
2.5
3
Normalized On-Resistance
1.8 VGS=2.5V
70 RDS(ON) (mΩ Ω)
0.5
VGS(Volts) Figure 2: Transfer Characteristics (Note E)
VDS (Volts) Fig 1: On-Region Characteristics (Note E)
60 VGS=4.5V 50 40
VGS=10V
VGS=4.5V ID=3A
1.6 1.4
VGS=10V 17 ID=4A
1.2 VGS=2.5V ID=2A
1
5 2 10
0.8
30 0
2
0
4
6 8 10 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E)
25
50
75
100
125
150
175
0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E)
120
1.0E+02 ID=4A 1.0E+01
100
40
125°C
80
60
IS (A)
RDS(ON) (mΩ Ω)
1.0E+00 1.0E-01
125°C
1.0E-02 1.0E-03
40
25°C
25°C
1.0E-04 1.0E-05
20 0
4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E)
Rev 6: Jan. 2011
2
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts) Figure 6: Body-Diode Characteristics (Note E)
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AO3402
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10
400 VDS=15V ID=4A
350
8 Capacitance (pF)
VGS (Volts)
300 6
4
250 Ciss
200 150 100
Coss
2 50 0
Crss
0 0
2 4 6 8 10 Qg (nC) Figure 7: Gate-Charge Characteristics
12
0
5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics
30
10000
100.0
TA=25°C 1000
RDS(ON) limited
10µs 100µs
1.0
1ms 10ms 0.1
TJ(Max)=150°C TA=25°C
Power (W)
ID (Amps)
10.0
100
10
10s DC
1
0.0
0.00001 0.01
0.1
1 VDS (Volts)
10
0.001
0.1
10
1000
100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
Figure 9: Maximum Forward Biased Safe Operating Area (Note F)
Zθ JA Normalized Transient Thermal Resistance
10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=125°C/W
0.1
PD
0.01 Single Pulse
Ton
T
0.001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 6: Jan. 2011
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AO3402
Gate Charge Test Circuit & Waveform Vgs Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
DUT
-
Vgs Ig Charge
R es istiv e S w itch ing T e st C ircu it & W a ve fo rm s RL V ds Vds
DUT
Vgs
90 %
+
Vdd
VDC
-
Rg
1 0%
Vgs
V gs
t d (o n )
tr
t d (o ff)
to n
tf t o ff
D iode R ecovery T est C ircuit & W aveform s Q rr = -
V ds +
Idt
DUT V gs
V ds -
Isd V gs
Ig
Rev 6: Jan. 2011
L
Isd
+ VD C
-
IF
t rr
dI/dt I RM
V dd
V dd V ds
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