Transcript
http://www.fujielectric.com/products/semiconductor/
7MBR100VP060-50
IGBT Modules
IGBT MODULE (V series) 600V / 100A / PIM Features Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product
Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply
Maximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25°C unless otherwise specified) Items
Symbols
Inverter
Collector-Emitter voltage Gate-Emitter voltage Collector current
Converter
Brake
Collector power dissipation Collector-Emitter voltage Gate-Emitter voltage Collector current Collector power dissipation Repetitive peak reverse voltage (Diode) Repetitive peak reverse voltage Average output current Surge current (Non-Repetitive) I2t (Non-Repetitive)
Conditions
VCES VGES Ic Icp -Ic -Ic pulse Pc VCES VGES IC ICP PC VRRM VRRM IO IFSM I2 t
Junction temperature
Tj
Operating junciton temperature (under switching conditions)
Tjop
Case temperature Storage temperature
Tc Tstg
Continuous 1ms
Tc=80°C Tc=80°C
1ms 1 device
Continuous 1ms 1 device
Tc=80°C Tc=80°C
50Hz/60Hz, sine wave 10ms, Tj=150°C half sine wave Inverter, Brake Converter Inverter, Brake Converter
Isolation voltage
between terminal and copper base (*1) Viso between thermistor and others (*2)
AC : 1min.
Screw torque
Mounting (*3)
M5
-
Maximum ratings 600 ±20 100 200 100 200 430 600 ±20 50 100 215 600 800 100 700 2450 175 150 150 150 125 -40 to +125
Units V V A W V V A W V V A A A2 s
°C
2500
VAC
3.5
Nm
Note *1: All terminals should be connected together during the test. Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test. Note *3: Recommendable value : 2.5-3.5 Nm (M5)
1
1252b MARCH 2014
7MBR100VP060-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Electrical characteristics (at Tj= 25°C unless otherwise specified) Items Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage
Symbols
Conditions
ICES IGES VGE (th)
VGE = 0V, VCE = 600V VGE = 0V, VGE = ±20V VCE = 20V, IC = 75mA
VCE (sat) (terminal)
VGE = 15V IC = 100A
VCE (sat) (chip)
VGE = 15V IC = 100A
Rg(int) Cies ton tr tr (i) toff tf
VCE = 10V, VGE = 0V, f = 1MHz
Inverter
Collector-Emitter saturation voltage
Internal gate resistance Input capacitance Turn-on time Turn-off time
VF (terminal)
VCC = 300V IC = 100A VGE = +15 / -15V RG = 30Ω
IF = 100A
Forward on voltage
Brake
Tj=25°C Tj=125°C Tj=150°C Tj=25°C Tj=125°C Tj=150°C
Units mA nA V
V
Ω nF
µs
V
VF (chip)
IF = 100A
trr
IF = 100A
Zero gate voltage collector current
ICES
VGE = 0V VCE = 600V
-
-
1.0
mA
Gate-Emitter leakage current
IGES
VCE = 0V VGE = +20 / -20V
-
-
200
nA
VCE (sat) (terminal)
VGE = 15V IC = 50A
465 3305
1.80 2.10 2.20 1.60 1.90 2.00 0 0.36 0.25 0.52 0.03 1.65 1.25 5000 495 3375
2.25 2.05 1.20 0.60 1.20 0.45 1.00 2.10 1.0 520 3450
Reverse recovery time
Collector-Emitter saturation voltage
Internal gate resistance Turn-on time Turn-off time Reverse current Thermistor Converter
Tj=25°C Tj=125°C Tj=150°C Tj=25°C Tj=125°C Tj=150°C
Characteristics min. typ. max. 1.0 200 6.2 6.7 7.2 2.25 2.70 2.65 2.75 1.85 2.30 2.25 2.35 0 4.9 0.36 1.20 0.25 0.60 0.07 0.52 1.20 0.03 0.45 2.15 2.60 2.10 2.05 1.75 2.20 1.70 1.65 0.35
VCE (sat) (chip)
VGE = 15V IC = 50A
Rg(int) ton tr toff tf IRRM
-
Tj=25°C Tj=125°C Tj=150°C Tj=25°C Tj=125°C Tj=150°C
VCE = 300V IC = 50A VGE = +15 / -15V RG = 43Ω VR = 600V
Forward on voltage
VFM (chip)
Reverse current
IRRM
Resistance
R
B value
B
VR = 800V T = 25°C T = 100°C T = 25 / 50°C
Symbols
Conditions
IF = 100A
terminal chip
µs
V
Ω µs mA V mA Ω K
Thermal resistance characteristics Items
Thermal resistance (1device)
Rth(j-c)
Contact thermal resistance (1device) (*4)
Rth(c-f)
Inverter IGBT Inverter FWD Brake IGBT Converter Diode with Thermal Compound
Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound.
2
Characteristics min. typ. max. 0.35 0.62 0.71 0.66 0.05 -
Units
°C/W
7MBR100VP060-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Characteristics (Representative) [ Inverter ] Collector current vs. Collector-Emitter voltage (typ.)
[ Inverter ] Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25oC / chip 200 VGE=20V
Tj= 150oC / chip 200
15V
VGE=20V
15V
Collector current: IC [A]
Collector current: IC [A]
12V 150
100
10V
50
12V 150
100
10V
50 8V
8V 0
0 0
1
2
3
4
0
5
Collector-Emitter voltage: VCE[V]
3
4
5
[ Inverter ] Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj= 25oC / chip 8
Tj=25°C
Collector - Emitter voltage: VCE [V]
200
Collector current: IC [A]
2
Collector-Emitter voltage: VCE[V]
[ Inverter ] Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip
Tj=150°C
150
Tj=125°C
100
50
0
6
4
Ic=200A Ic=100A Ic=50A
2
0 0
1
2
3
4
5
5
10
Collector-Emitter voltage: VCE[V]
Collector - Emitter voltage: VCE [200V/div] Gate - Emitter voltage: VGE [5V/div]
100.0
Cies
Coes
1.0
Cres 0.1
0.0 0
10
20
20
25
[ Inverter ] Dynamic gate charge (typ.) Vcc=300V, Ic=100A, Tj= 25°C
VGE=0V, f= 1MHz, Tj= 25oC
10.0
15
Gate - Emitter voltage: VGE [V]
[ Inverter ] Capacitance vs. Collector-Emitter voltage (typ.)
Capacitance: Cies, Coes, Cres [nF]
1
30
Collector - Emitter voltage: VCE [V]
VCE VGE
0
-600
0
Gate charge: Qg [nC]
3
600
7MBR100VP060-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
[ Inverter ] Switching time vs. Collector current (typ.)
[ Inverter ] Switching time vs. Collector current (typ.)
Vcc=300V, VGE=±15V, Rg=30Ω, Tj=150°C 10000
Switching time : ton, tr, toff, tf [ nsec ]
Switching time : ton, tr, toff, tf [ nsec ]
Vcc=300V, VGE=±15V, Rg=30Ω, Tj=125°C 10000
ton
1000
tr toff
100 tf
10 0
100
200
1000
ton tr toff
100 tf
10
300
0
Collector current: IC [A] [ Inverter ] Switching time vs. gate resistance (typ.) Switching loss : Eon, Eoff, Err [mJ/pulse ]
Switching time : ton, tr, toff, tf [ nsec ]
Vcc=300V, Ic=100A, VGE=±15V, Tj=125°C toff ton tr 1000
tf
10 10
100
1000
Eon(150°C) Eon(125°C)
20
15 Eoff(150°C) Eoff(125°C)
10
5 Err(150°C) Err(125°C)
0 0
100
300
[ Inverter ] Reverse bias safe operating area (max.) +VGE=15V, -VGE <= 15V, Rg >= 30Ω, Tj = 150°C 300
Eon(150oC) Eon(125oC)
25
Collector current: IC [A]
Switching loss : Eon, Eoff, Err [mJ/pulse ]
200
Collector current: IC [A]
[ Inverter ] Switching loss vs. gate resistance (typ.) Vcc=300V, Ic=100A, VGE=±15V
20 15 Eoff(150oC)
10
Eoff(125oC)
5 0
300
25
Gate resistance : Rg [Ω]
30
200
[ Inverter ] Switching loss vs. Collector current (typ.) Vcc=300V, VGE=±15V, Rg=30Ω
10000
100
100
Collector current: IC [A]
Err(150oC) Err(125oC)
10
100
200 RBSOA (Repetitive pulse)
100
0 0
1000
200
400
600
Collector-Emitter voltage : VCE [V] (Main terminals)
Gate resistance : Rg [Ω]
4
800
7MBR100VP060-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
[ Inverter ] Reverse recovery characteristics (typ.) Vcc=300V, VGE=±15V, Rg=30Ω
[ Inverter ] Forward current vs. forward on voltage (typ.) chip
150
100 Tj=125°C
Tj=150°C 50
Tj=25°C 0 0.0
0.5
1.0
1.5
2.0
1000
Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ]
Forward current : IF [A]
200
2.5
trr(150°C) trr(125°C)
100
Irr(150°C) Irr(125°C)
10
3.0
0
100
Forward on voltage : VF [V]
200
300
Forward current : IF [A]
[ Converter ] Forward current vs. forward on voltage (typ.) chip
Forward current : IF [A]
200
150
100 Tj=125° C
50
Tj=25°C
0 0.0
0.5
1.0
1.5
2.0
2.5
3.0
Forward on voltage : VFM [V] [ Thermistor ] Temperature characteristic (typ.)
Transient thermal resistance (max.) 100
IGBT[Brake] FWD[Inverter]
Resistance : R [kΩ]
Thermal resistanse : Rth(j-c) [ °C/W ]
1.00
IGBT[Inverter]
Conv. Diode
0.10
t
4
Zth =
n =1
n
Tn rn [°C/W]
0.01 0.001
[sec] IGBT FWD B-IGBT Conv
0.010
rn
1
e
n
1
2
3
4
0.0023 0.03754 0.06650 0.07616 0.07079
0.0301 0.09518 0.16861 0.19308 0.17948
0.0598 0.13446 0.23819 0.27277 0.25356
0.0708 0.08282 0.14670 0.16800 0.15617
0.100
10
1
0.1
1.000
-60
Pulse width : Pw [sec]
-40
-20
0
20
40
60
80
100 120 140 160 180
Temperature [°C ]
5
7MBR100VP060-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
[ Brake ] Collector current vs. Collector-Emitter voltage (typ.)
[ Brake ] Collector current vs. Collector-Emitter voltage (typ.) Tj= 25oC / chip VGE=20V
15V
100
VGE=20V
12V
Collector current: IC [A]
Collector current: IC [A]
100
Tj= 150oC / chip
75 10V 50
25
15V
12V
75
10V
50
25
8V
8V 0
0 0
1
2
3
4
0
5
Collector-Emitter voltage: VCE[V]
5
Tj= 25oC / chip
Tj=150°C
Collector - Emitter voltage: VCE [V]
Collector current: IC [A]
4
[ Brake ] Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj=125°C
50
25
0
6
4
Ic=100A Ic=50A Ic=25A
2
0 0
1
2
3
4
5
5
10
VGE=0V, f= 1MHz, Tj= 25oC
Vcc=300V, Collector - Emitter voltage: VCE [200V/div] Gate - Emitter voltage: VGE [5V/div]
10.0 Cies
1.0 Coes Cres 0.1 10
20
20
25
[ Brake ] Dynamic gate charge (typ.)
[ Brake ] Capacitance vs. Collector-Emitter voltage (typ.)
0
15
Gate - Emitter voltage: VGE [V]
Collector-Emitter voltage: VCE[V]
Capacitance: Cies, Coes, Cres [nF]
3
8
Tj=25°C
75
2
Collector-Emitter voltage: VCE[V]
[ Brake ] Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip 100
1
30
Collector - Emitter voltage: VCE [V]
Ic=50A,
Tj= 25°C VGE
VCE 0
-500
0
Gate charge: Qg [nC]
6
500
7MBR100VP060-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Outline Drawings(Unit:mm)
(
shows theoretical dimension. ) shows reference dimension.
Section A-A Weight: 200g(typ.)
Equivalent Circuit [ Converter ]
[ Brake]
[ Inverter ]
7
[ Thermistor ]
7MBR100VP060-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
WARNING 1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of March 2014. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sure to obtain the latest specifications. 2. A ll applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Device Technology Co., Ltd. is (or shall be deemed) granted. Fuji Electric Device Technology Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3. A lthough Fuji Electric Device Technology Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design fail-safe, flame retardant, and free of malfunction. 4. T he products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements. • Computers • OA equipment • Communications equipment (terminal devices) • Measurement equipment • Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc. 5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric Device Technology Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty. • Transportation equipment (mounted on cars and ships) • Trunk communications equipment • Traffic-signal control equipment • Gas leakage detectors with an auto-shut-off feature • Emergency equipment for responding to disasters and anti-burglary devices • Safety devices • Medical equipment 6. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation). • Space equipment • Aeronautic equipment • Nuclear control equipment • Submarine repeater equipment 7. Copyright ©1996-2014 by Fuji Electric Device Technology Co., Ltd. All rights reserved. No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Device Technology Co., Ltd. 8. If you have any question about any portion in this Catalog, ask Fuji Electric Device Technology Co., Ltd. or its sales agents before using the product. Neither Fuji Electric Device Technology Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions set forth herein.
8
Technical Information
IGBT Modules
Please refer to URLs below for futher information about products, application manuals and technical documents. 关于本规格书中没有记载的产品信息，应用手册，技术资料等，请参考以下链接。 本データシートに記載されていない製品情報 , アプリケーションマニュアル , 技術資料は以下の URL をご参照下さい。
FUJI ELECTRIC Power Semiconductor WEB site 日本
www.fujielectric.co.jp/products/semiconductor/
Global
www.fujielectric.com/products/semiconductor/
中国
www.fujielectric.com.cn/products/semiconductor/
Europe
www.fujielectric-europe.com/components/semiconductors/
North America
www.americas.fujielectric.com/components/semiconductors/
Information 日本 1 半導体総合カタログ 2 製品情報 3 アプリケーションマニュアル 4 技術資料 5 マウンティングインストラクション 6 IGBT 損失シミュレーションソフト 7 AT-NPC 3-Level 損失シュミレーションソフト 8 富士電機技報 9 製品のお問い合わせ 10 改廃のお知らせ
www.fujielectric.co.jp/products/semiconductor/catalog/ www.fujielectric.co.jp/products/semiconductor/model/ www.fujielectric.co.jp/products/semiconductor/model/igbt/application/ www.fujielectric.co.jp/products/semiconductor/model/igbt/technical/ www.fujielectric.co.jp/products/semiconductor/model/igbt/mounting/ www.fujielectric.co.jp/products/semiconductor/model/igbt/simulation/ www.fujielectric.co.jp/products/semiconductor/model/igbt/simulation_3level/ www.fujielectric.co.jp/products/semiconductor/journal/ www.fujielectric.co.jp/products/semiconductor/contact/ www.fujielectric.co.jp/products/semiconductor/discontinued/
Global 1 Semiconductors General Catalog 2 Product Information 3 Application Manuals 4 Technical Documents 5 Mounting Instructions 6 IGBT Loss Simulation Software 7 AT-NPC 3-Level Loss Simulation Software 8 Fuji Electric Journal 9 Contact 10 Revised and discontinued product information
www.fujielectric.com/products/semiconductor/catalog/ www.fujielectric.com/products/semiconductor/model/ www.fujielectric.com/products/semiconductor/model/igbt/application/ www.fujielectric.com/products/semiconductor/model/igbt/technical/ www.fujielectric.com/products/semiconductor/model/igbt/mounting/ www.fujielectric.com/products/semiconductor/model/igbt/simulation/ www.fujielectric.com/products/semiconductor/model/igbt/simulation_3level/ www.fujielectric.com/products/semiconductor/journal/ www.fujielectric.com/products/semiconductor/contact/ www.fujielectric.com/products/semiconductor/discontinued/
中国 1 半导体综合目录 2 产品信息 3 应用手册 4 技术资料 5 安装说明书 6 IGBT 损耗模拟软件 7 AT-NPC 3-Level 损耗模拟软件 8 富士电机技报 9 产品咨询 10 产品更改和停产信息
www.fujielectric.com.cn/products/semiconductor/catalog/ www.fujielectric.com.cn/products/semiconductor/model/ www.fujielectric.com.cn/products/semiconductor/model/igbt/application/ www.fujielectric.com.cn/products/semiconductor/model/igbt/technical/ www.fujielectric.com.cn/products/semiconductor/model/igbt/mounting/ www.fujielectric.com.cn/products/semiconductor/model/igbt/simulation/ www.fujielectric.com.cn/products/semiconductor/model/igbt/simulation_3level/ www.fujielectric.com.cn/products/semiconductor/journal/ www.fujielectric.com.cn/products/semiconductor/contact/ www.fujielectric.com.cn/products/semiconductor/discontinued/ 2015-10
