Transcript
Advanced Power Electronics Corp.
AP4509GM-HF-3
Complementary N and P-channel Enhancement-mode Power MOSFETs Simple Drive Requirement D2
Low On-resistance
N-CH
D2 D1
Fast Switching Performance
D1
G2
RoHS-compliant, halogen-free SO-8
S1
S2 G1
P-CH
Description
BV DSS
30V
RDS(ON)
14mΩ
ID BVDSS RDS(ON) ID
10A -30V 20mΩ -8.4A
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.
D1
The AP4509GM-HF-3 is in a standard SO-8 package, which is widely used for commercial and industrial surface-mount applications, and is well suited for applications such as DC and servo motor drives.
D2
G2
G1 S1
S2
Absolute Maximum Ratings Symbol
Rating
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID at TA=25°C ID at TA=70°C
Units
N-channel
P-channel
30
-30
V
±20
±20
V
Continuous Drain Current
3
10.0
-8.4
A
Continuous Drain Current
3
7.9
-6.7
A
30
-30
A
1
IDM
Pulsed Drain Current
PD at TA=25°C
Total Power Dissipation Linear Derating Factor
2.0
W
0.016
W/°C
TSTG
Storage Temperature Range
-55 to 150
°C
TJ
Operating Junction Temperature Range
-55 to 150
°C
Thermal Data Parameter
Symbol Rthj-a
3
Maximum Thermal Resistance, Junction-ambient
Value
Unit
62.5
°C/W
Ordering Information AP4509GM-HF-3TR
©2009 Advanced Power Electronics Corp. USA www.a-powerusa.com
RoHS-compliant, halogen-free SO-8, shipped on tape and reel (3000 pcs/reel)
200812042-3
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Advanced Power Electronics Corp.
AP4509GM-HF-3
N-channel Electrical Specifications at Tj=25°C (unless otherwise specified) Symbol
Parameter
BVDSS
Drain-Source Breakdown Voltage
∆ BV DSS /∆ Tj RDS(ON)
Test Conditions VGS=0V, ID=250uA
Min.
Typ. Max. Units
30
-
-
V
Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA
-
0.02
-
V/°C
Static Drain-Source On-Resistance2
VGS=10V, ID=9A
-
-
14
mΩ
VGS=4.5V, ID=5A
-
-
20
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=9A
-
14
-
S
IDSS
Drain-Source Leakage Current
VDS=30V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=70 C) VDS=24V, VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS=±20V
-
-
±100
nA
ID=9A
-
23
65
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=24V
-
6
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
14
-
nC
VDS=15V
-
14
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=1A
-
10
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω ,VGS=10V
-
36
-
ns
tf
Fall Time
RD=15Ω
-
17
-
ns
Ciss
Input Capacitance
VGS=0V
-
1770 2830
pF
Coss
Output Capacitance
VDS=25V
-
430
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
350
-
pF
Source-Drain Diode Symbol VSD
Parameter 2
Forward On Voltage
2
Test Conditions
Min.
Typ. Max. Units
IS=1.7A, VGS=0V
-
-
1.2
V
trr
Reverse Recovery Time
IS=9A, VGS=0V
-
31
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
25
-
nC
Notes: 1.Pulse width limited by maximum junction temperature. 2.Pulse width <300us, duty cycle < 2%.
3.Surface mounted on 1 in 2 copper pad of FR4 board, t <10sec; 135°C/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. ©2009 Advanced Power Electronics Corp. USA www.a-powerusa.com
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Advanced Power Electronics Corp.
AP4509GM-HF-3
P-channel Electrical Specifications at Tj=25°C (unless otherwise specified) Symbol
Parameter
Test Conditions
Min.
Typ.
-30
-
-
V
-
-0.02
-
V/°C
VGS=-10V, ID=-8A
-
-
20
mΩ
VGS=-4.5V, ID=-4A
-
-
30
mΩ
BVDSS
Drain-Source Breakdown Voltage
∆ BV DSS /∆ Tj
Breakdown Voltage Temperature Coefficient Reference to 25°C,ID=-1mA
RDS(ON)
VGS=0V, ID=-250uA 2
Static Drain-Source On-Resistance
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-8A
-
14
-
S
IDSS
Drain-Source Leakage Current
VDS=-30V, VGS=0V
-
-
-1
uA
Drain-Source Leakage Current (Tj=70 C) VDS=-24V, VGS=0V
-
-
-25
uA
Gate-Source Leakage
VGS=±20V
-
-
±100
nA
o
IGSS
2
Qg
Total Gate Charge
ID=-8A
-
27
45
nC
Qgs
Gate-Source Charge
VDS=-24V
-
4
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
18
-
nC
VDS=-15V
-
16
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-1A
-
11
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω ,VGS=-10V
-
40
-
ns
tf
Fall Time
RD=15Ω
-
25
-
ns
Ciss
Input Capacitance
VGS=0V
-
1580 2530
pF
Coss
Output Capacitance
VDS=-25V
-
540
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
450
-
pF
Min.
Typ.
IS=-1.7A, VGS=0V
-
-
-1.2
V
IS=-8A, VGS=0V
-
40
-
ns
dI/dt=-100A/µs
-
32
-
nC
Source-Drain Diode Symbol VSD
Parameter
Test Conditions
2
Forward On Voltage
2
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Max. Units
Notes: 1.Pulse width limited by maximum junction temperature. 2.Pulse width <300us, duty cycle < 2%.
3.Surface mounted on 1 in 2 copper pad of FR4 board, t <10sec; 135°C/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. ©2009 Advanced Power Electronics Corp. USA www.a-powerusa.com
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Advanced Power Electronics Corp.
AP4509GM-HF-3
Typical N-channel Electrical Characteristics 160
140
T A = 25 o C
10V 7.0V
120
100
80
5.0V
60
4.5V
T A = 150 o C
120
ID , Drain Current (A)
ID , Drain Current (A)
140
10V 7.0V
100
80
60
5.0V
40
4.5V
40
20
20
V G =3.0V
V G =3.0V 0
0 0
1
2
3
0
4
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
2
3
4
Fig 2. Typical Output Characteristics
18
1.6
ID=9A V G =10V
ID=5A T A =25 o C
1.4
Normalized RDS(ON)
RDS(ON) (mΩ )
1
V DS , Drain-to-Source Voltage (V)
15
12
1.2
1.0
0.8
9
0.6 3
5
7
9
11
-50
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance vs. Gate Voltage
Fig 4. Normalized On-Resistance vs. Junction Temperature 2.5
10
VGS(th) (V)
8
IS(A)
6
T j =150 o C
T j =25 o C
2.0
4 1.5
2
1.0
0
0
0.2
0.4
0.6
0.8
1
1.2
-50
0
50
100
150
V SD , Source-to-Drain Voltage (V)
T j , Junction Temperature ( o C)
Fig 5. Forward Characteristic of Reverse Diode
Fig 6. Gate Threshold Voltage vs. Junction Temperature
©2009 Advanced Power Electronics Corp. USA www.a-powerusa.com
4/8
Advanced Power Electronics Corp.
AP4509GM-HF-3
Typical N-channel Electrical Characteristics (cont.) f=1.0MHz 10000
I D =9A V DS =24V
12
10
C (pF)
VGS , Gate to Source Voltage (V)
14
8
C iss 1000
6
C oss C rss
4
2
0
100 0
10
20
30
40
50
1
5
9
Fig 7. Gate Charge Characteristics
17
21
25
29
Fig 8. Typical Capacitance Characteristics
100
10
1ms 10ms 1
100ms 1s 0.1
o
T A =25 C Single Pulse
DC
0.01
Normalized Thermal Response (Rthja)
1
100us
ID (A)
13
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
PDM
t
0.01
T
Single Pulse
Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja =135°C/W
0.001 0.1
1
10
100
0.0001
0.001
0.01
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
VDS
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
90%
QG 4.5V QGS
QGD
10% VGS td(on) tr
td(off) tf
Fig 11. Switching Time Waveforms
©2009 Advanced Power Electronics Corp. USA www.a-powerusa.com
Charge
Q
Fig 12. Gate Charge Waveform
5/8
Advanced Power Electronics Corp.
AP4509GM-HF-3
Typical P-channel Electrical Characteristics 120
160
-10V
o
T A = 25 C
140
-10V
T A = 150 o C
120
-ID , Drain Current (A)
-ID , Drain Current (A)
100
-7.0V
100
80
-5.0V -4.5V
60
-7.0V
80
-5.0V
60
-4.5V
40
40
20
V G =-3.0V
20
0
V G =-3.0V
0 0
1
2
3
4
5
6
7
0
1
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
3
4
5
6
Fig 2. Typical Output Characteristics
33
1.6
I D =- 8 A V G =-10V
ID=-4A
30
o T A =25 C
Normalized RDS(ON)
1.4
27
RDS(ON) (mΩ )
2
-V DS , Drain-to-Source Voltage (V)
24
21
1.2
1.0
0.8 18
0.6
15
3
5
7
9
11
-50
0
50
100
150
o
-V GS ,Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance vs. Gate Voltage
Fig 4. Normalized On-Resistance vs. Junction Temperature
8
2.5
6
T j =150 o C
4
-VGS(th) (V)
-IS(A)
2
T j =25 o C
1.5 2
1
0
0
0.2
0.4
0.6
0.8
1
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of Reverse Diode
©2009 Advanced Power Electronics Corp. USA www.a-powerusa.com
1.2
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage vs. Junction Temperature
6/8
Advanced Power Electronics Corp.
AP4509GM-HF-3
Typical P-channel Electrical Characteristics (cont.) f=1.0MHz 14
10000
I D =- 8 A V DS =-24V
-VGS , Gate to Source Voltage (V)
12
C (pF)
10
8
C iss 1000
6
C oss C rss
4
2
100
0 0
10
20
30
40
50
1
60
5
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
13
17
21
25
29
Fig 8. Typical Capacitance Characteristics
100
100us 1ms 10ms
1
100ms 1s
0.1
T A =25 o C Single Pulse
DC
Normalized Thermal Response (Rthja)
1
10
-ID (A)
9
-V DS , Drain-to-Source Voltage (V)
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
PDM
t
Single Pulse
T Duty factor = t/T Peak Tj = PDM x Rthja + T a Rthja=135°C/W
0.001
0.01 0.1
1
10
100
0.0001
0.001
-V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS 90%
QG -4.5V QGS
QGD
10% VGS td(on) tr
td(off) tf
Fig 11. Switching Time Waveforms
©2009 Advanced Power Electronics Corp. USA www.a-powerusa.com
Charge
Q
Fig 12. Gate Charge Waveform
7/8
Advanced Power Electronics Corp.
AP4509GM-HF-3
Package Dimensions: SO-8 D
8
7
Millimeters
6
5
SYMBOLS
MIN
NOM MAX
A
1.35
1.55
1.75
A1
0.10
0.18
0.25
B
0.33
0.41
0.51
C
0.19
0.22
0.25
D
4.80
4.90
5.00
E1
3.80
3.90
4.00
E
5.80
6.15
6.50
L
0.38
0.71
1.27
0
4.00
8.00
E
E1 1 2
3
4
e e
B
1.27 TYP
A A1 DETAIL A
L
Θ
1. All dimensions are in millimeters. 2. Dimensions do not include mold protrusions.
c DETAIL A
Marking Information:
Product: AP4509
4509GM YWWSSS
Package: GM = RoHS-compliant SO-8 Date/lot code (YWWSSS) Y: Last digit of the year WW: Work week SSS: Lot code sequence
©2009 Advanced Power Electronics Corp. USA www.a-powerusa.com
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