Transcript
RB731XN Diodes
Schottky barrier diode RB731XN zApplications General rectification
zLand size figure
zExternal dimensions (Unit : mm)
0.65
2.0±0.2 各リードとも Each lead has same dimension 同寸法
0.25± 0.1
(6)
(5)
(1)
(2)
(4)
0.9
2.1±0.1
1.25±0.1
1.6
zFeatures 1) Small power mold type. (UMD6) 2) Low VF 3) High reliability
0.65
0.15±0.05
0.05
0～0.1
0.35
0.1Min
(3)
UMD6
0.65
0.65
0.7
1.3±0.1
0.9±0.1
zStructure ROHM : UMD6 JEDEC : SOT-363 JEITA : SC-88 dot (year week factory)
zTaping dimensions (Unit : mm) φ1.5±0.1 0
2.0±0.05
0.3±0.1
φ1.1±0.1
4.0±0.1
2.2±0.1
2.4±0.1
8.0±0.2
5.5±0.2 0～0.5
2.45±0.1
2.4±0.1
3.5±0.05
1.75±0.1
4.0±0.1
1.15±0.1
zAbsolute maximum ratings (Ta=25°C) Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive peak)
VRM
40
V
Reverse voltage (DC)
VR
40
V
Average rectified forward current ∗
IO
30
mA
IFSM
200
mA
Junction temperature
Tj
125
°C
Storage temperature
Tstg
−40 to +125
°C
Forward current surge peak (60Hz 1cyc.) ∗
∗ Rating for each diode Io/3
zElectrical characteristic (Ta=25°C) Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Forward voltage
VF
−
−
0.37
V
IF=1mA
Reverse current
IR
−
−
1
µA
VR=10V
Capacitance between terminal
Ct
−
2
−
pF
VR=1V, f=1MHz
Rev.B
1/3
RB731XN Diodes zElectrical characteristic curves
Ta=75℃
1 Ta=-25℃ Ta=25℃ 0.1
100
Ta=75℃
10 1
Ta=25℃
0.1
Ta=-25℃
0.01
0.01
0.001
100 200 300 400 500 600 700 800 900 1000
0
FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS
0
5
280 270 260
0.8 0.7 0.6 0.5 0.4 0.3 AVE:0.083nA
0.2
PEAK SURGE FORWARD CURRENT:IFSM(A)
8.3ms
10
AVE:7.30A
35
6 5 4 3 2 1 0
AVE:2.52pF
Ct DISPERSION MAP
10 Ifsm 8.3ms 8.3ms 1cyc
10
5
30
Ta=25℃ f=1MHz VR=0V n=10pcs
7
0
15
15
25
8
0.1
20 1cyc
20
9
IR DISPERSION MAP
Ifsm
15
10 Ta=25℃ VR=10V n=30pcs
VF DIPERSION MAP
20
10
REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
REVERSE CURRENT:IR(nA)
Ta=25℃ IF=1mA n=30pcs
290
250
5
9 Ifsm
8
t
7 6 5 4 3 2 1
0
0
0 1
IFSM DISPERSION MAP
1000
10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS
100
1
10 TIME:t(ms) IFSM-t CHARACTERISTICS
100
0.003
0.04
100
Rth(j-c) Mounted on epoxy board IM=1mA
IF=10mA
10 1ms
time
FORWARD POWER DISSIPATION:Pf(W)
Rth(j-a) 0.03
D=1/2
REVERSE POWER DISSIPATION:PR (W)
PEAK SURGE FORWARD CURRENT:IFSM(A)
0.1
30
1 0.9
AVE:267.4mV
TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W)
20
1
REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS
300 FORWARD VOLTAGE:VF(mV)
10
PEAK SURGE FORWARD CURRENT:IFSM(A)
0
f=1MHz
Ta=125℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF)
Ta=125℃ 10
REVERSE CURRENT:IR(uA)
FORWARD CURRENT:IF(mA)
10
1000
100
Sin(θ＝180) 0.02
DC
0.01
0.002 DC
0.001
Sin(θ＝180)
300us
1 0.001
0.00 0.1
10 TIME:t(s) Rth-t CHARACTERISTICS
1000
0 0.00
0.01
0.02
0.03
0.04
AVERAGE RECTIFIED FORWARD CURRENT Io(A) Io-Pf CHARACTERISTICS
0.05
0
10
20
30
REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS
Rev.B
2/3
RB731XN Diodes 0.1 Per chip
0.08
Io
0A 0V t
0.06
DC
T
VR D=t/T VR=15V Tj=125℃
D=1/2
0.04 0.02
Sin(θ＝180) 0 0
25
50
75
100
AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta)
125
AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
0.1
Per chip 0.08
Io
0A 0V t
0.06
DC
0.04
D=1/2
0.02
Sin(θ＝180)
T
VR D=t/T VR=15V Tj=125℃
0 0
25 50 75 100 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc)
125
Rev.B
3/3
Appendix
Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
