Transcript
AO4714 30V N-Channel MOSFET
SRFET General Description
TM
Product Summary
TM
SRFET AO4714 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications.
VDS (V) = 30V ID =20A (VGS = 10V) RDS(ON) < 4.7mΩ (VGS = 10V) RDS(ON) < 6.7mΩ (VGS = 4.5V)
100% UIS Tested 100% Rg Tested
SOIC-8 Top View D D
D
Bottom View
TM
SRFET Soft Recovery MOSFET: Integrated Schottky Diode
D D
G
G S
S
S S
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage
VGS TA=25°C
Continuous Drain Current F Pulsed Drain Current B
TA=25°C Power Dissipation
±20
V
IDSM
16
IDM
100
Avalanche Current B B
A W
2.0
IAR
30
A
EAR
135
mJ
-55 to 150
°C
Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter t ≤ 10s Maximum Junction-to-Ambient A A Steady-State Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Lead C
Alpha & Omega Semiconductor, Ltd.
A
3.0
PDSM
TA=70°C
Repetitive avalanche energy L=0.3mH
Units V
20
TA=70°C
F
Maximum 30
Symbol RθJA RθJL
Typ 31 59 16
Max 41 75 24
Units °C/W °C/W °C/W
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AO4714
Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol
Parameter
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage
Conditions
Min
ID=1mA, VGS=0V
IGSS VGS(th)
Gate-Body leakage current
VDS=0V, VGS= ±20V
Gate Threshold Voltage On state drain current
VDS=VGS ID=250µA
1.2
VGS=10V, VDS=5V
100
TJ=125°C
VGS=10V, ID=20A Static Drain-Source On-Resistance
TJ=125°C VGS=4.5V, ID=16A
gFS
Forward Transconductance
VDS=5V, ID=20A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode + Schottky Continuous Current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
20
VGS=0V, VDS=0V, f=1MHz
0.1
µA
2.2
V
3.9
4.7
5.9
7.3
5.4
6.7
mΩ
0.5
V
6
A
A
90 0.36
4512
pF
314
pF
SWITCHING PARAMETERS Qg(10V) Total Gate Charge
62
74
Qg(4.5V) Total Gate Charge
29
35
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf trr
Turn-Off Fall Time Body Diode Reverse Recovery Time
Qrr
pF
682 1.5
Qgs
mΩ
S
0.75
VGS=10V, VDS=15V, ID=20A
mA
1.5
3760 VGS=0V, VDS=15V, f=1MHz
Units V
0.1
Zero Gate Voltage Drain Current
RDS(ON)
Max
30
VDS=30V, VGS=0V
IDSS
ID(ON)
Typ
Ω
nC
12
nC
12
nC
9.5
ns
VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω
8.5
ns
34
ns
9
ns
IF=20A, dI/dt=300A/µs
18
Body Diode Reverse Recovery Charge IF=20A, dI/dt=300A/µs
22
27
ns nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. F. The power dissipation and current rating is based on the t≤ 10s junction to ambient thermal resistance rating. Rev3: Nov. 2010
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
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AO4714
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 200
30 10V
5V
175
4.5V
150
7V
6V
4V
20 ID(A)
ID (A)
125 100
VDS=5V
25
3.5V
75
125°
15 10
50
25°C
VGS=3V 5
25 0
0 0
1
2
3
4
5
1
1.5
VDS (Volts) Figure 1: On-Region Characteristics
3
3.5
4
Normalized On-Resistance
1.8
7 RDS(ON) (mΩ )
2.5
VGS(Volts) Figure 2: Transfer Characteristics
8
6
VGS=4.5V
5 4 3
VGS=10V
2
VGS=10V 1.6
ID=20A
1.4
VGS=4.5V ID=16A
1.2 1 0.8
0
5
10
15
20
25
30
0
ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage
30
60
90
120
150
180
Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature
10
1.0E+02 ID=20A
1.0E+01
8
125°C
1.0E+00 IS (A)
125°C RDS(ON) (mΩ )
2
6
1.0E-01
25°C
1.0E-02 1.0E-03
4 25°C
1.0E-04 1.0E-05
2 2
4
6
8
10
VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts) Figure 6: Body-Diode Characteristics
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AO4714
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 12000
10
10000 VDS=15V ID=20A
6
Capacitance (pF)
VGS (Volts)
8
4
6000 4000 Crss
2
2000
0
Coss
0 0
20
40
60
80
100
0
Qg (nC) Figure 7: Gate-Charge Characteristics
1000.0
10
15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics
30
90
10µs
100.0
TJ(Max)=150°C TA=25°C
80 70
RDS(ON) limited
Power (W)
100µ
10.0 1.0
5
100 TJ(Max)=150°C T A=25°C
ID (Amps)
Ciss
8000
1ms 0.1s 1s
10s
50 40 30
DC
0.1
60
20 10
0.0 0.1
1
10
100
VDS (Volts)
0 0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s) Figure10: Single Pulse Power Rating Junction-toAmbient (Note E)
Figure 9: Maximum Forward Biased Safe Operating Area (Note E)
Zθ JA Normalized Transient Thermal Resistance
10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1
0.1
Single Pulse 0.001 0.00001
0.0001
PD
D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=41°C/W
0.01
0.001
0.01
0.1
Ton
1
T
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note E)
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