Transcript
AOD423/AOI423/AOY423 30V P-Channel MOSFET
General Description
Product Summary
The AOD423/AOI423/AOY423 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK/IPAK package, this device is well suited for high current load applications.
VDS ID (at VGS= -20V)
-30V -70A
RDS(ON) (at VGS= -20V)
< 6.2mΩ (< 6.7mΩ∗)
RDS(ON) (at VGS = -10V)
< 8mΩ
(< 8.5mΩ∗)
100% UIS Tested 100% Rg Tested
TO252 DPAK
TO-251A IPAK
TO251B (IPAK short lead)
Top View
Bottom View
D
D
D
D
Bottom View
Top View
D
S
G
G
G
S
S
D
D
S
G
S
G
Orderable Part Number
Package Type
Form
Minimum Order Quantity
AOD423 AOI423 AOY423
TO-252 TO-251A TO-251B
Tape & Reel Tube Tube
2500 4000 4000
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current G
VGS TC=25°C
Pulsed Drain Current C Continuous Drain Current
TA=25°C
±25
V
-67
IDM
A
-200 -15
IDSM
TA=70°C
Units V
-70
ID
TC=100°C
Maximum -30
A
-12
Avalanche Current C
IAS, IAR
-50
A
Avalanche energy L=0.1mH C TC=25°C
EAS, EAR
125
mJ
Power Dissipation B
TC=100°C
Power Dissipation A
TA=70°C
TA=25°C
2.5
Steady-State Steady-State
RθJA RθJC
W
1.6
TJ, TSTG
Symbol t ≤ 10s
W
45
PDSM
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case
90
PD
-55 to 175
Typ 16 41 0.9
°C
Max 20 50 1.6
Units °C/W °C/W °C/W
* package TO251A, TO251B
Rev.1.0: August 2014
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Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol
Parameter
STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS
Conditions
Min
ID=-250µA, VGS=0V
-30 -1
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±25V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=-250µA
-1.5
ID(ON)
On state drain current
VGS=-10V, VDS=-5V
-200
TJ=55°C
-5
nA
-3.5
V
5.1
6.2
7.6
9.2
6.2
8
mΩ
VGS=-20V, ID=-20A TO251A, TO251B
5.6
6.7
mΩ
VGS=-10V, ID=-20A TO251A, TO251B
6.7
8.5
mΩ
TO252 VGS=-10V, ID=-20A TO252
Forward Transconductance
VDS=-5V, ID=-20A
VSD
Diode Forward Voltage
IS=-1A,VGS=0V
IS
Maximum Body-Diode Continuous CurrentG
TJ=125°C
Crss
Reverse Transfer Capacitance
42
Rg
Gate resistance
VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS Qg Total Gate Charge VGS=-10V, VDS=-15V, ID=-20A
A
-0.7
DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance
µA
±100
gFS
Coss
Units
-2.5
VGS=-20V, ID=-20A
Static Drain-Source On-Resistance
Max
V
VDS=-30V, VGS=0V
IDSS
RDS(ON)
Typ
1.5
mΩ
S -1
V
-70
A
2760
pF
550
pF
375
pF
3
6.0
Ω
45
65
nC
Qgs
Gate Source Charge
10
nC
Qgd
Gate Drain Charge
12
nC
tD(on)
Turn-On DelayTime
13
ns
23
ns
35
ns
26
ns ns nC
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
VGS=-10V, VDS=-15V, RL=0.75Ω, RGEN=3Ω
trr
Body Diode Reverse Recovery Time
IF=-20A, dI/dt=500A/µs
15
Qrr
Body Diode Reverse Recovery Charge IF=-20A, dI/dt=500A/µs
30
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: August 2014
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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100
100 -10V
VDS=-5V
-6V
80
80 -5V 60 -ID(A)
-ID (A)
60
40
125°C
40
-4.5V
25°C
20
20 VGS=-4V
0
0 0
1
2
3
4
1.5
5
10 Normalized On-Resistance
RDS(ON) (mΩ)
2.5
3
3.5
4
4.5
5
5.5
6
1.8
8 VGS=-10V 6
4
VGS=-20V
2
VGS=-20V ID=-20A
1.6 1.4
17 5 2 VGS=-10V 10
1.2
ID=-20A
1 0.8
0
15 20 25 30 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E)
5
10
0
25
50
75
100
125
150
175
200
Temperature (°C) 0 Figure 4: On-Resistance vs. Junction 18Temperature (Note E)
20
1.0E+02 ID=-20A
1.0E+01
40
15
1.0E+00 125°C
125°C
-IS (A)
RDS(ON) (mΩ)
2
-VGS(Volts) Figure 2: Transfer Characteristics (Note E)
-VDS (Volts) Fig 1: On-Region Characteristics (Note E)
10
25°C 1.0E-02 1.0E-03
25°C
5
1.0E-01
1.0E-04 0
1.0E-05 0
5
10
15
20
-VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E)
Rev.1.0: August 2014
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VSD (Volts) Figure 6: Body-Diode Characteristics (Note E)
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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10
5000 VDS=-15V ID=-20A 4000 Capacitance (pF)
-VGS (Volts)
8
6
4
2
Ciss
3000
2000 Coss 1000
0
Crss
0 0
10
20
30
40
0
50
10µs
RDS(ON) limited
20
25
30
10.0
DC
320
10µs
1ms 10ms
1.0 TJ(Max)=175°C TC=25°C
0.0 0.01
TJ(Max)=175°C TC=25°C
100µs Power (W)
-ID (Amps)
15
400
1000.0
0.1
10
-VDS (Volts) Figure 8: Capacitance Characteristics
Qg (nC) Figure 7: Gate-Charge Characteristics
100.0
5
0.1
240 160 80
1
10
0 0.0001
100
-VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F)
0.001
0.01
0.1
1
10
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
ZθJC Normalized Transient Thermal Resistance
10
1
D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=1.6°C/W
40
PD
0.1 Single Pulse
Ton T
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.1.0: August 2014
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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 150
TA=25°C TA=100°C 100.0 TA=150°C
Power Dissipation (W)
-IAR (A) Peak Avalanche Current
1000.0
120 90 60 30
TA=125°C 0
10.0 1
10
100
0
1000
25
50
75
100
175
10000
80 70
TA=25°C
1000
60 Power (W)
Current rating ID(A)
150
TCASE (°C) Figure 13: Power De-rating (Note F)
Time in avalanche, tA (ms) Figure 12: Single Pulse Avalanche capability (Note C)
50 40 30
100
10
20 10
1 0.00001
0 0
25
50
75
100
125
150
10
1
0.001
0.1
10
1000
0 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-to18 Ambient (Note H)
175
TCASE (°C) Figure 14: Current De-rating (Note F)
ZθJA Normalized Transient Thermal Resistance
125
D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=50°C/W
40
0.1 PD
0.01 Single Pulse
Ton T
0.001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.1.0: August 2014
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Page 5 of 6
Gate Charge Test Circuit & Waveform Vgs Qg -10V
-
-
VDC
+
VDC
Qgs
Vds
Qgd
+
DUT Vgs Ig
Charge
Resistive Switching Test Circuit & Waveforms RL Vds
toff
ton td(on)
Vgs
-
DUT
Vgs
td(off)
tr
tf
90%
Vdd
VDC
+
Rg
Vgs
10% Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2
L
E AR= 1/2 LIAR
Vds Vds
Id
-
Vgs
Vgs
VDC
+
Rg
BVDSS Vdd Id I AR
DUT Vgs
Vgs
Diode Recovery Test Circuit & Waveforms Q rr = - Idt
Vds + DUT
Vds -
Isd Vgs
Ig
Rev.1.0: August 2014
Vgs
L
-Isd
+ Vdd
t rr
dI/dt -I RM Vdd
VDC
-
-I F
-Vds
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