Transcript
AOWF4N60 600V,4A N-Channel MOSFET
General Description
Product Summary
The AOWF4N60 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this parts can be adopted quickly into new and existing offline power supply designs.
VDS ID (at VGS=10V)
700V@150℃ 4A
RDS(ON) (at VGS=10V)
< 2.3Ω
100% UIS Tested 100% Rg Tested
TO-262F Top View
D
Bottom View
S G
D
S
D
G
G
S
AOWF4N60
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current
VGS TC=25°C TC=100°C
ID
AOWF4N60 600
Units V
±30
V
4* 2.6*
A
Pulsed Drain Current C
IDM
Avalanche Current C
IAR
2.8
A
Repetitive avalanche energy C
EAR
118
mJ
235 5 25
mJ V/ns W
0.2 -55 to 150
W/ oC °C
300
°C
AOWF4N60 65 5
Units °C/W °C/W
Single pulsed avalanche energy G EAS Peak diode recovery dv/dt dv/dt TC=25°C PD Power Dissipation B Derate above 25oC TJ, TSTG Junction and Storage Temperature Range Maximum lead temperature for soldering TL purpose, 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Maximum Junction-to-Ambient A,D RθJA Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature.
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AOWF4N60
Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol
Parameter
Conditions
Min
ID=250µA, VGS=0V, TJ=25°C
600
Typ
Max
Units
STATIC PARAMETERS BVDSS
Drain-Source Breakdown Voltage
BVDSS /∆TJ
Breakdown Voltage Temperature Coefficient
IDSS
Zero Gate Voltage Drain Current
ID=250µA, VGS=0V, TJ=150°C
700
V
ID=250µA, VGS=0V
0.67
V/ oC
VDS=600V, VGS=0V
1
VDS=480V, TJ=125°C
10
IGSS
Gate-Body leakage current
VDS=0V, VGS=±30V
VGS(th)
Gate Threshold Voltage
VDS=5V, ID=250µA
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=2A
gFS
Forward Transconductance
VDS=40V, ID=2A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
±100 3.4
µA
4.1
4.5
nΑ V
1.8
2.3
Ω
1
V
6
S
0.76
IS
Maximum Body-Diode Continuous Current
4
A
ISM
Maximum Body-Diode Pulsed Current
14
A
DYNAMIC PARAMETERS Input Capacitance Ciss Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS Qg Total Gate Charge Qgs
Gate Source Charge
Qgd
Gate Drain Charge
VGS=10V, VDS=480V, ID=4A
420
528
640
pF
35
53
70
pF
2.5
4.8
7
pF
1.2
2.5
3.8
Ω
9.5
12
14.5
nC
2.8
3.6
4.5
nC
2.2
4.4
6.6
nC
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf trr
Turn-Off Fall Time IF=4A,dI/dt=100A/µs,VDS=100V
150
190
230
Qrr
Body Diode Reverse Recovery Charge IF=4A,dI/dt=100A/µs,VDS=100V
1.9
2.4
3
Body Diode Reverse Recovery Time
VGS=10V, VDS=300V, ID=4A, RG=25Ω
17
ns
26
ns
34
ns
21
ns ns µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. L=30mH, IAS=2.8A, VDD=150V, RG=25Ω, Starting TJ=25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev0: Nov 2011
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AOWF4N60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100
8 10V
7
VDS=40V -55°C
6
4
ID(A)
5 ID (A)
10
6.5V 6V
3
125°C 1
2
25°C
VGS=5.5V 1 0 0
5
10
15
20
25
0.1
30
2
4
VDS (Volts) Fig 1: On-Region Characteristics 4.5
8
10
Normalized On-Resistance
3
4.0 3.5 RDS(ON) (Ω)
6
VGS(Volts) Figure 2: Transfer Characteristics
VGS=10V
3.0 2.5 2.0 1.5
2
4
6
8
VGS=10V ID=2A
2 1.5 1 0.5 0 -100
1.0 0
2.5
10
-50
0
50
100
150
200
Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature
ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 1.2
1.0E+02
125°C
40 1.0E+00 IS (A)
BVDSS (Normalized)
1.0E+01 1.1
1
1.0E-01 1.0E-02
25°C
0.9 1.0E-03 0.8 -100
1.0E-04 -50
0
50
100
150
200
TJ (°C) Figure 5:Break Down vs. Junction Temperature
Rev0: Nov 2011
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0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts) Figure 6: Body-Diode Characteristics (Note E)
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AOWF4N60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15
10000 VDS=480V ID=4A Capacitance (pF)
VGS (Volts)
12
9
6
1000
Ciss
Coss
100
Crss
10 3
1
0 0
3
6
9
12
15
0.1
18
10
100
100
5
4
10µs
10 RDS(ON) limited
ID (Amps)
Current rating ID(A)
1
VDS (Volts) Figure 8: Capacitance Characteristics
Qg (nC) Figure 7: Gate-Charge Characteristics
3
2
100µs
1 1ms 10ms
DC
0.1 1
0.1s
TJ(Max)=150°C TC=25°C
0
1s
0.01 0
25
50
75
100
125
150
1
TCASE (°C) Figure 9: Current De-rating (Note B)
10
100
1000
VDS (Volts) Figure 10: Maximum Forward Biased Safe Operating Area for AOWF4N60 (Note F)
ZθJC Normalized Transient Thermal Resistance
10
1
D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=5°C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1 PD 0.01
Ton T
Single Pulse 0.001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance for AOWF4N60 (Note F)
Rev0: Nov 2011
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AOWF4N60
Gate Charge Test Circuit & Waveform Vgs Qg 10V
+ + Vds
VDC
-
Qgs
Qgd
VDC
DUT
-
Vgs Ig Charge
Res istive Switching Test Circuit & Waveforms RL Vds Vds
DUT
Vgs
+ VDC
90% Vdd
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI
Vds
2 AR
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT Vgs
Vgs
Diode Recovery Tes t Circuit & Waveforms Qrr = - Idt
Vds + DUT Vgs Vds -
Isd Vgs
Ig
Rev0: Nov 2011
L
Isd
+ VDC
-
IF
trr
dI/dt IRM
Vdd
Vdd Vds
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