Transcript
AOD516/AOI516/AOY516 30V N-Channel AlphaMOS
General Description
Product Summary VDS
• Latest Trench Power MOSFET technology • Very Low RDS(on) at 4.5V VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant
Application
30V 46A
RDS(ON) (at VGS=10V)
< 5mΩ
RDS(ON) (at VGS = 4.5V)
< 10mΩ
100% UIS Tested 100% Rg Tested
• DC/DC Converters in Computing • Isolated DC/DC Converters in Telecom and Industrial
TO252 DPAK: AOD516
ID (at VGS=10V)
TO-251B IPAK: AOI516/AOY516 D
TopView
Top View
Bottom View
Bottom View
D
D
D
S
D
G
G
S D
S
G
S
VGS TC=25°C
Continuous Drain Current G Pulsed Drain Current
C
±20
V A
170 18
IDSM
TA=70°C
Units V
36
IDM TA=25°C
Continuous Drain Current
Maximum 30 46
ID
TC=100°C
S
D
G
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage
G
A
14
Avalanche Current C
IAS
29
A
Avalanche energy L=0.1mH C
EAS
42
mJ
VDS Spike
VSPIKE
36
V
100ns TC=25°C
Power Dissipation B
PD
TC=100°C TA=25°C
Power Dissipation
A
Junction and Storage Temperature Range
Rev.5.0: July 2013
2.5
Steady-State Steady-State
RθJA RθJC
W
1.6
TJ, TSTG
Symbol t ≤ 10s
W
25
PDSM
TA=70°C
Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case
50
-55 to 175
Typ 16 41 2.5
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°C
Max 20 50 3
Units °C/W °C/W °C/W
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AOD516/AOI516/AOY516
Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol
Parameter
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
Typ
30 1 TJ=55°C
Gate-Body leakage current
VDS=0V, VGS= ±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS，ID=250µA
5 1.8
VGS=10V, ID=20A
100
nA
2.6
V
4
5
5.4
6.8 10
Static Drain-Source On-Resistance VGS=4.5V, ID=20A
7.1
gFS
Forward Transconductance
VDS=5V, ID=20A
83
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.7
IS
Maximum Body-Diode Continuous CurrentG
DYNAMIC PARAMETERS Ciss Input Capacitance Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=15V, f=1MHz
µA
2.2
RDS(ON)
TJ=125°C
Units V
VDS=30V, VGS=0V
IGSS
Max
mΩ mΩ S
1
V
46
A
1333
pF
512
pF
42
pF
1.7
2.6
Ω
SWITCHING PARAMETERS Qg(10V) Total Gate Charge
18.3
33
nC
Qg(4.5V) Total Gate Charge
8.5
17
nC
Qgs
Gate Source Charge
Qgd
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=15V, ID=20A
0.8
4.8
nC
Gate Drain Charge
2.5
nC
tD(on)
Turn-On DelayTime
7.5
ns
tr
Turn-On Rise Time
4.8
ns
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
Qrr
VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω
23.3
ns
4.5
ns
IF=20A, dI/dt=500A/µs
14.1
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
16.2
ns nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=175°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.5.0: July 2013
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AOD516/AOI516/AOY516
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100
100
10V
4.5V 6V
80
VDS=5V 80
8V
4V
60 ID(A)
ID (A)
60 3.5V
40
40
20
20
125°C
25°C
VGS=3V 0
0 0
1
2
3
4
0
5
10
2
3
4
5
6
Normalized On-Resistance
1.6
8 RDS(ON) (mΩ Ω)
1
VGS(Volts) Figure 2: Transfer Characteristics (Note E)
VDS (Volts) Fig 1: On-Region Characteristics (Note E)
VGS=4.5V
6 4 VGS=10V
2 0
VGS=10V ID=20A
1.4
1.2
1
VGS=4.5V ID=20A
0.8 0
5
10
15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E)
0
25
50
75
100
125
150
175
200
Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E)
12
1.0E+02 ID=20A 1.0E+01
40
9 125°C IS (A)
RDS(ON) (mΩ Ω)
1.0E+00 6
1.0E-02 3
125°C
1.0E-01 25°C
1.0E-03
25°C
1.0E-04 0
1.0E-05 2
6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E)
Rev.5.0: July 2013
4
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0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E)
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AOD516/AOI516/AOY516
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10
1800 Ciss
1400 Capacitance (pF)
VGS (Volts)
1600
VDS=15V ID=20A
8
6
4
1200 1000 800 Coss
600 400
2
Crss
200 0
0 0
5
10 15 Qg (nC) Figure 7: Gate-Charge Characteristics
0
20
250
10µs
RDS(ON) limited
100µs
10.0
1ms
DC
10ms
1.0
TJ(Max)=150°C TC=25°C
0.1
TJ(Max)=150°C TC=25°C
10µs Power (W)
ID (Amps)
30
300
1000.0 100.0
5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics
200 150 100 50
0.0
0 0.01
0.1
1 VDS (Volts)
10
100
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-to-Case (Note F)
Figure 9: Maximum Forward Biased Safe Operating Area (Note F)
Zθ JC Normalized Transient Thermal Resistance
10 D=Ton on/T TJ,PK J,PK=TC C+PDM DM.ZθJC θJC.RθJC θJC
1
descendingorder order InIndescending D=0.5,0.3, 0.3,0.1, 0.1,0.05, 0.05,0.02, 0.02,0.01, 0.01,single singlepulse pulse D=0.5,
=5°C/W RθJC θJC=3°C/W
0.1 Single Pulse Single Pulse
0.01 1E-05
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.5.0: July 2013
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AOD516/AOI516/AOY516
60
60
50
50 Current rating ID(A)
Power Dissipation (W)
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40 30 20 10
40 30 20 10
0
0 0
25
50
75 100 125 TCASE (° °C) Figure 12: Power De-rating (Note F)
150
0
25
50
75 100 125 150 TCASE (° °C) Figure 13: Current De-rating (Note F)
175
10000 TA=25°C
Power (W)
1000
100
10
1 1E-05
0.001
0.1
10
1000
Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-toAmbient (Note H)
Zθ JA Normalized Transient Thermal Resistance
10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=50°C/W
0.1 Single Pulse
0.01
0.001 1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.5.0: July 2013
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AOD516/AOI516/AOY516
Gate Charge Test Circuit & Waveform Vgs Qg 10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT Vgs Ig
Charge
Resistive Switching Test Circuit & Waveforms RL Vds Vds
Vgs
90%
+ Vdd
DUT
VDC
-
Rg
10%
Vgs
Vgs
td(on)
tr
td(off)
t on
tf toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT Vgs
Vgs
Diode Recovery Test Circuit & Waveforms Q rr = - Idt
Vds + DUT Vgs
Vds Isd Vgs Ig
Rev.5.0: July 2013
L
Isd
+ Vdd
t rr
dI/dt I RM Vdd
VDC
-
IF
Vds
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