Transcript
Power F-MOS FETs
2SK3024 (Tentative) Silicon N-Channel Power F-MOS FET ■ Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage
unit: mm 6.5±0.1 5.3±0.1 4.35±0.1
■ Absolute Maximum Ratings (TC = 25°C) Symbol
*
2.3±0.1
Ratings
Unit
VDSS
60
V
Gate to Source voltage
VGSS
±20
V
DC
ID
±20
A
Pulse
IDP
±40
A
EAS*
20
mJ
Avalanche energy capacity Allowable power
TC = 25°C
dissipation
Ta = 25°C
4.6±0.1
1
2
1: Gate 2: Drain 3: Source U Type Package
3
Internal Connection
20
PD
0.5±0.1
0.75±0.1
Drain to Source breakdown voltage
Drain current
1.0±0.2
1.0±0.1 0.1±0.05
0.93±0.1
0.8max
7.3±0.1 2.5±0.1
● Contactless relay ● Diving circuit for a solenoid ● Driving circuit for a motor ● Control equipment ● Switching power supply
1.8±0.1
0.5±0.1
■ Applications
Parameter
2.3±0.1
W
1
Channel temperature
Tch
150
°C
Storage temperature
Tstg
−55 to +150
°C
D G
S
L = 0.1mH, IL = 20A, 1 pulse
■ Electrical Characteristics (TC = 25°C) Parameter
Symbol
Conditions
min
Drain to Source cut-off current
IDSS
Gate to Source leakage current
IGSS
VGS = ±20V, VDS = 0
Drain to Source breakdown voltage
VDSS
ID = 1mA, VGS = 0
60
Gate threshold voltage
Vth
VDS = 10V, ID = 1mA
1
RDS(on)1
VGS = 10V, ID = 10A
Drain to Source ON-resistance
RDS(on)2
VGS = 4V, ID = 10A
Forward transfer admittance
| Yfs |
VDS = 10V, ID = 10A
Diode forward voltage
VDSF
IDR = 20A, VGS = 0
Input capacitance (Common Source) Ciss Output capacitance (Common Source)
Coss
typ
VDS = 50V, VGS = 0
VDS = 10V, VGS = 0, f = 1MHz
Reverse transfer capacitance (Common Source) Crss
8
max
Unit
10
µA
±10
µA V
2.5
V
33
50
mΩ
44
70
mΩ
12
S −1.5
V
330
pF
290
pF
70
pF
Turn-on time (delay time)
td(on)
Rise time
tr
VDD = 30V, ID = 10A
20
ns
125
ns
Fall time
tf
VGS = 10V, RL = 3Ω
Turn-off time (delay time)
td(off)
520
ns
1480
ns
Thermal resistance between channel and case
Rth(ch-c)
6.25
°C/W
Thermal resistance between channel and atmosphere
Rth(ch-a)
125
°C/W
1
