Transcript
Smart Power High-Side-Switch One Channel: 20 mΩ
BTS441T
Product Summary On-state Resistance Operating Voltage Nominal load current Current limitation
Package RON Vbb(on) IL(ISO) IL(lim)
20mΩ 4.75 ... 41V 21A 65A
TO-220-5-11
TO-263-5-2
Standard
SMD
TO-220-5-12
Straight
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N channel vertical power FET with charge pump, ground referenced CMOS compatible input, monolithically integrated in Smart SIPMOS technology. • Green Product (RoHS compliant) Providing embedded protective functions. • AEC Qualified
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μC compatible power switch for 5V, 12 V and 24 V DC applications All types of resistive, inductive and capacitve loads Most suitable for loads with high inrush currents, so as lamps Replaces electromechanical relays, fuses and discrete circuits
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• • • • •
Very low standby current Optimized static electromagnetic compatibility (EMC) µC and CMOS compatible Fast demagnetization of inductive loads Stable behaviour at undervoltage
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Short circuit protection Current limitation Overload protection Thermal shutdown Overvoltage protection (including load dump) with external GND-resistor Reverse battery protection with external GND-resistor Loss of ground and loss of Vbb protection Electrostatic discharge (ESD) protection
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Data sheet
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Rev. 1.11, 2008-12-09
BTS441T
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Data sheet
2
Rev. 1.11, 2008-12-09
BTS441T
Maximum Ratings at Tj = 25 °C unless otherwise specified Parameter Supply voltage (overvoltage protection see page 4) Supply voltage for full short circuit protection Tj Start=-40 ...+150°C Load dump protection1) VLoadDump = VA + Vs, VA = 13.5 V RI2)= 2 Ω, RL= 0,5 Ω, td= 200 ms, IN= low or high Load current (Short-circuit current, see page 5) Operating temperature range Storage temperature range Power dissipation (DC) ; TC≤25°C Maximal switchable inductance, single pulse Vbb = 12V, Tj,start = 150°C, TC = 150°C const. (see diagram, p.8) IL(ISO) = 21 A, RL= 0 Ω: E4)AS=0.7J: Electrostatic discharge capability (ESD) IN: (Human Body Model) Out to all other pins shorted:
Symbol Vbb Vbb
43 34
Unit V V
60
V
IL Tj Tstg
self-limited -40 ...+150 -55 ...+150
A °C
Ptot
125
W
ZL VESD
2.1 1.0 8.0
mH kV
-10 ... +16 ±2.0
V mA
≤1 ≤ 75
K/W
VLoad dump3)
Values
acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993; R=1.5kΩ; C=100pF
VIN IIN
Input voltage (DC) Current through input pin (DC) see internal circuit diagrams page 7
Thermal resistance
1) 2) 3) 4) 5)
chip - case: junction - ambient (free air): SMD version, device on pcb5):
RthJC RthJA
≤ 33
Supply voltages higher than Vbb(AZ) require an external current limit for the GND pin, e.g. with a 150 Ω resistor in the GND connection. A resistor for the protection of the input is integrated. RI = internal resistance of the load dump test pulse generator VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 EAS is the maximum inductive switch off energy Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70μm thick) copper area for Vbb connection. PCB is vertical without blown air.
Data sheet
3
Rev. 1.11, 2008-12-09
BTS441T
Electrical Characteristics Parameter and Conditions
Symbol
at Tj =-40...+150°C, Vbb = 12 V unless otherwise specified
Values min typ max
Unit
Load Switching Capabilities and Characteristics On-state resistance (Vbb (pin3) to OUT (pin5)); IL = 2 A Vbb≥7V: Tj=25 °C: RON Tj=150 °C:
--
15 28
20 37
mΩ
17
21
--
A
--
--
2
mA
40 40
90 110
200 250
μs
dV /dton
0.1
--
1
V/μs
-dV/dtoff
0.1
--
1
V/μs
4.75 4.75 4.75 5.0 41 43 -----
-----47 5 --1.5
41 43 43 43 -52 10 10 25 10
V
--
2
4
see diagram page 9
Nominal load current (pin 3 to 5) ‘ISO 10483-1, 6.7:VON=0.5V, TC=85°C
IL(ISO)
Output current (pin 5) while GND disconnected or GND pulled up6), Vbb=30 V, VIN= 0,
IL(GNDhigh)
see diagram page 7
Turn-on time IN Turn-off time IN RL = 12 Ω, Slew rate on 10 to 30% VOUT, RL = 12 Ω, Slew rate off 70 to 40% VOUT, RL = 12 Ω,
to 90% VOUT: ton to 10% VOUT: toff
Operating Parameters Operating voltage
Tj =-40°C Vbb(on) Tj =+25°C Tj =+105°C6) Tj =+150°C Overvoltage protection7) Tj =-40°C: Vbb(AZ) I bb = 40 mA Tj =+25...+150°C: Standby current (pin 3) 8) Tj=-40...+25°C: Ibb(off) Tj=+105°C6): VIN=0 see diagram page 9 Tj=+150°C: IL(off) Off-State output current (included in Ibb(off)) VIN=0 Operating current (Pin 1)9), VIN=5 V, IGND
6) 7) 8) 9)
V μA μA mA
not subject to production test, specified by design see also VON(CL) in table of protection functions and circuit diagram page 7 Measured with load, typ. 40 µA without load. Add IIN, if VIN>5.5 V
Data sheet
4
Rev. 1.11, 2008-12-09
BTS441T
Parameter and Conditions
Symbol min
at Tj =-40...+150°C, Vbb = 12 V unless otherwise specified
Protection Functions10) Current limit (pin 3 to 5) (see timing diagrams, page 9)
Repetitive short circuit current limit Tj = Tjt (see timing diagrams, page 10) Thermal shutdown time11)12)
Values typ max
Unit
IL(lim) Tj =-40°C: Tj =25°C: Tj =+150°C: IL(SCr)
--40 --
-65 -55
85 ----
A A
Tj,start =25°C: Toff(SC)
--
14
--
ms
41 43 150 ---
-47 -10 --
-52 --32
V °C K V
--
540
--
mV
(see timing diagram on page 10)
Output clamp (inductive load switch off)
;Tj =-40°C: Tj=25..150°C: VON(CL) Thermal overload trip temperature Tjt Thermal hysteresis ΔTjt Reverse battery (pin 3 to 1) 13) -Vbb Reverse battery voltage drop (VOUT > Vbb) -VON(rev) IL = -2A Tj =+150°C: at VOUT = Vbb - VON(CL), IL= 40 mA
10)
Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. 11) not subject to production test, specified by design 12) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70μm thick) copper area for V bb connection. PCB is vertical without blown air. 13) Requires 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature protection is not active during reverse current operation! Input and Status currents have to be limited (see max. ratings page 1 and circuit page 7).
Data sheet
5
Rev. 1.11, 2008-12-09
BTS441T
Parameter and Conditions at Tj =-40...+150°C, Vbb = 12 V unless otherwise specified
Values min typ max
Input14) Input resistance Input turn-on threshold voltage Input turn-off threshold voltage Input threshold hysteresis Off state input current (pin 2) On state input current (pin 2)
2.5 1.2 0.8 -1 4.5
14)
Symbol
RI VIN(T+) VIN(T-) Δ VIN(T) VIN = 0.4 V: IIN(off) VIN = 5 V: IIN(on)
see circuit page 7
3.8 --0.3 -12
6.5 2.2 --15 24
Unit
kΩ V V V μA μA
If a ground resistor RGND is used, add the voltage drop across this resistor.
Data sheet
6
Rev. 1.11, 2008-12-09
BTS441T
Overvolt. and reverse batt. protection
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VZ1 = 6.1 V typ., VZ2 = 47 V typ., RGND = 150 Ω, RI= 3.5 kΩ typ. In case of reverse battery the load current has to be limited by the load. Temperature protection is not active
Input circuit (ESD protection) ,1
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5,
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GND disconnect
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The use of ESD zener diodes as voltage clamp at DC conditions is not recommended.
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Any kind of load. In case of Input=high is VOUT ≈ VIN - VIN(T+) .
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GND disconnect with GND pull up VON clamped to 47 V typ.
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Any kind of load. If VGND > VIN - VIN(T+) device stays off
Data sheet
7
Rev. 1.11, 2008-12-09
BTS441T
Vbb disconnect with charged inductive load
Inductive load switch-off energy dissipation ( EE ( $6
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For inductive load currents up to the limits defined by ZL (max. ratings and diagram on page 8) each switch is protected against loss of Vbb. Consider at your PCB layout that in the case of Vbb disconnection with energized inductive load all the load current flows through the GND connection.
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Energy stored in load inductance: 2
EL = 1/2·L·I L While demagnetizing load inductance, the energy dissipated in PROFET is
EAS= Ebb + EL - ER= VON(CL)·iL(t) dt, with an approximate solution for RL > 0 Ω:
EAS=
IL· L (V + |VOUT(CL)|) 2·RL bb
OQ(1+ |V
IL·RL
OUT(CL)|
)
Maximum allowable load inductance for a single switch off / I ,/ Tj,start = 150°C, Vbb = 12 V, RL = 0 Ω L [mH]
IL [A]
Data sheet
8
Rev. 1.11, 2008-12-09
BTS441T
Typ. on-state resistance 521 I 9EE7M ; IL = 2 A, IN = high RON [mΩ]
7M &
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Vbb [V]
Typ. standby current ,EE RII I 7M ; Vbb = 9...34 V, IN1,2 = low Ibb(off) [μA]
Tj [°C]
Data sheet
9
Rev. 1.11, 2008-12-09
BTS441T
Figure 2b: Switching a lamp,
Timing diagrams
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Figure 1a: Vbb turn on: ,1
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Figure 3a: Short circuit shut down by overtemperature, reset by cooling proper turn on under all conditions
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Figure 2a: Switching a resistive load, turn-on/off time and slew rate definition:
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Heating up may require several milliseconds, depending on external conditions
Figure 4a: Overtemperature: Reset if Tj
