Transcript
SST200/200A Vishay Siliconix
N-Channel JFETs
PRODUCT SUMMARY VGS(off) (V)
V(BR)GSS Min (V)
gfS Min (mS)
IDSS Min (mA)
-0.3 to -0.9
-25
0.25
0.15
FEATURES D D D D
Low Cutoff Voltage: <0.9 V High Input Impedance Very Low Noise High Gain: AV = 80 @ 20 mA
BENEFITS
APPLICATIONS
D High Quality Low-Level Signal Amplification D Low Signal Loss/System Error D High System Sensitivity
D D D D
Mini-Microphones Hearing Aids High-Gain, Low-Noise Amplifiers Low-Current, Low-Voltage Battery-Powered Amplifiers D Ultra High Input Impedance Pre-Amplifiers
DESCRIPTION The SST200/200A features low leakage, very low noise and low cutoff voltage for use with low-level power supplies. The SST200/200A is excellent for battery powered equipment and low current amplifiers such as mini-microphones.
The TO-236 (SOT-23) and SOT-323 (SC-70 3-leads) packages, provide surface-mount capability and is available in tape-and-reel for automated assembly. For applications information see AN102 and AN106.
SOT-323 (SC-70 3-LEADS)
TO-236 (SOT-23)
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D 3
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Document Number: 70976 S-31623—Rev. E, 01-Sep-03
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Top View
Top View
SST200 (S2)* *Marking Code for TO-236
SST200A (C)* *Marking Code for SOT-323
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SST200/200A Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -25 V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA Lead Temperature (1/16” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to 150_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . -55 to 150_C
Power Dissipation To-236 (SOT-23)a . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW SC-70b . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150 mW Notes a. Derate 2.8 mW/_C above 25_C b. Derate 1.2 mW/_C above 25_C
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits Parameter
Symbol
Test Conditions
Min
V(BR)GSS
IG = -1 mA , VDS = 0 V
-25
VGS(off)
VDS = 15 V, ID = 1.0 mA
-0.3
VDS = 15 V, VGS = 0 V
0.15
Typa
Max
Unit
Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentb Gate Reverse Current Gate Operating Current
IDSS IGSS
VGS = -20 V, VDS = 0 V
V -0.9
-2 -1
TA = 125_C
0.7
mA
-100
pA nA
IG
VDG = 10 V, ID = 0.1 mA
-2
Drain Cutoff Current
ID(off)
VDS = 15 V, VGS = -5 V
2
Gate-Source Forward Voltage
VGS(F)
IG = 1 mA , VDS = 0 V
0.7
V
Common-Source Forward Transconductance
gfs
VDS = 15 V, VGS = 0 V f = 1 kHz
0.7
mS
Common-Source Input Capacitance
Ciss
Common-Source Reverse Transfer Capacitance
Crss
Equivalent Input Noise Voltage
en
pA
Dynamic
VDS = 15 V, VGS = 0 V f = 1 MHz VDS = 10 V, VGS = 0 V f = 1 kHz
Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b. Pulse test: PW v300 ms duty cycle v3%.
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0.25
4.5 pF 1.3 6
nV⁄ √Hz
NPA
Document Number: 70976 S-31623—Rev. E, 01-Sep-03
SST200/200A Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Drain Current and Transconductance vs. Gate-Source Cutoff Voltage IDSS @ VDS = 10 V, VGS = 0 V gfs @ VDS = 10 V, VGS = 0 V f = 1 kHz
0.8
1.6
0.7
1.2
gfs
0.5
1.0
0.4
0.8
0.3
0.6
IDSS
0.2
0.4
0.1
0.2
0.0 0.0
0.2
0.4
IG @ ID = 500 mA
1.8
1.4
0.6
10 nA
0.6
0.8
1.0
ID = 100 mA
gfs - Forward Transconductance (µS)
IDSS - Saturation Drain Current (mA)
0.9
Gate Leakage Current
2.0
1 nA
IG - Gate Leakage
1.0
TA = 125_C IGSS @ 125_C
100 pA
ID = 500 mA 10 pA ID = 100 mA TA = 25_C
1 pA
IGSS @ 25_C
0.1 pA
0
0
15
VGS(off) - Gate-Source Cutoff Voltage (V)
VDG - Drain-Gate Voltage (V)
Output Characteristics
400
VGS(off) = -0.7 V
Transfer Characteristics
500
VGS(off) = -0.7 V
VGS = 0 V
360
VDS = 10 V
400 ID - Drain Current (mA)
ID - Drain Current (mA)
30
-0.1 V
240
-0.2 V
160
-0.3 V 80
25_C 200 125_C 100
-0.4 V
-0.5 V
TA = -55_C
300
0
0 0
8
4
12
16
0
20
-0.1
VDS - Drain-Source Voltage (V)
-0.3
-0.4
-0.5
Transconductance vs. Gate-Source Voltage
1.5
VGS(off) = -0.7 V gfs - Forward Transconductance (mS)
-0.2
VGS - Gate-Source Voltage (V)
VDS = 10 V f = 1 kHz
1.2 TA = -55_C 25_C
0.9
0.6 125_C 0.3
0 0
-0.1
-0.2
-0.3
-0.4
-0.5
VGS - Gate-Source Voltage (V) Document Number: 70976 S-31623—Rev. E, 01-Sep-03
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SST200/200A Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Circuit Voltage Gain vs. Drain Current
160
g fs R L AV + 1 ) R g L os
120
RL +
Assume VDD = 15 V, VDS = 5 V 10 V ID
80
VGS(off) = -0.7 V -1.5 V
40
0
1600 VGS(off) = -0.7 V
1200
800 -1.5 V 400
0 0.01
10
0.1
1
Common-Source Reverse Feedback Capacitance vs. Gate-Source Voltage
5 Crss - Reverse Feedback Capacitance (pF)
VDS = 0 V 4 10 V 2
0 -4
-8
-12
-16
f = 1 MHz 4
3 VDS = 0 V 2
1
10 V
0
-20
0
VGS - Gate-Source Voltage (V)
Equivalent Input Noise Voltage vs. Frequency
-8
-12
-16
-20
Output Characteristics
300
VGS(off) = -0.7 V
VGS = 0 V
240
16 ID - Drain Current (µA)
Hz en - Noise Voltage nV /
-4
VGS - Gate-Source Voltage (V)
VDS = 10 V
ID @ 100 mA
12
8 VGS = 0 V
-0.1 180 -0.2 120
4
-0.3
-0.5
60
-0.4
0
0 10
100
1k f - Frequency (Hz)
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Common-Source Input Capacitance vs. Gate-Source Voltage
6
20
0.1 ID - Drain Current (mA)
8
0
0.01
ID - Drain Current (mA)
f = 1 MHz C iss - Input Capacitance (pF)
On-Resistance vs. Drain Current
2000 rDS(on) - Drain-Source On-Resistance ( Ω )
AV - Voltage Gain
200
10 k
100 k
0
0.1
0.2
0.3
0.4
0.5
VDS - Drain-Source Voltage (V) Document Number: 70976 S-31623—Rev. E, 01-Sep-03
Legal Disclaimer Notice Vishay
Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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