Transcript
GD400HFT120C2S_G8
IGBT Module
STARPOWER IGBT
SEMICONDUCTOR
GD400HFT120C2S_G8 1200V/400A 2 in one-package
General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS.
Features
Low VCE(sat) Trench IGBT technology 10μs short circuit capability VCE(sat) with positive temperature coefficient Maximum junction temperature 175oC Low inductance case Fast & soft reverse recovery anti-parallel FWD Isolated copper baseplate using DBC technology
Typical Applications
Inverter for motor drive AC and DC servo drive amplifier Uninterruptible power supply
Equivalent Circuit Schematic
©2015 STARPOWER Semiconductor Ltd.
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GD400HFT120C2S_G8
IGBT Module
Absolute Maximum Ratings TC=25oC unless otherwise noted IGBT Symbol VCES VGES IC ICM PD
Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current @ TC=25oC @ TC=100oC Pulsed Collector Current tp=1ms Maximum Power Dissipation @ Tj=175oC
Value 1200 ±30 630 400 800 2083
Unit V V
Description Repetitive Peak Reverse Voltage Diode Continuous Forward Current Diode Maximum Forward Current tp=1ms
Value 1200 400 800
Unit V A A
Value 175 -40 to +150 -40 to +125 4000
Unit o C o C o C V
A A W
Diode Symbol VRRM IF IFM
Module Symbol Tjmax Tjop TSTG VISO
Description Maximum Junction Temperature Operating Junction Temperature Storage Temperature Range Isolation Voltage RMS,f=50Hz,t=1min
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GD400HFT120C2S_G8
IGBT Module
IGBT Characteristics TC=25oC unless otherwise noted Symbol
VCE(sat)
VGE(th) ICES IGES RGint Cies Cres QG td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff ISC
Parameter Collector to Emitter Saturation Voltage Gate-Emitter Threshold Voltage Collector Cut-Off Current Gate-Emitter Leakage Current Internal Gate Resistance Input Capacitance Reverse Transfer Capacitance Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss SC Data
Test Conditions IC=400A,VGE=15V, Tj=25oC IC=400A,VGE=15V, Tj=125oC IC=400A,VGE=15V, Tj=150oC IC=16.0mA,VCE=VGE, Tj=25oC VCE=VCES,VGE=0V, Tj=25oC VGE=VGES,VCE=0V, Tj=25oC
Min.
Max.
1.70
2.15
1.95
Unit
V
2.00 5.0
VCE=30V,f=1MHz, VGE=0V VGE=15V
VCC=600V,IC=400A, RG=2.0Ω,VGE=±15V, Tj=25oC
VCC=600V,IC=400A, RG=2.0Ω,VGE=±15V, Tj=125oC
VCC=600V,IC=400A, RG=2.0Ω,VGE=±15V, Tj=150oC
tP≤10μs,VGE=15V, Tj=150oC,VCC=900V, VCEM≤1200V
©2015 STARPOWER Semiconductor Ltd.
Typ.
1/14/2015
5.7
6.5
V
5.0
mA
400
nA
0.5 39.6
Ω nF
1.20
nF
2.40 408 119 573 135
μC ns ns ns ns
10.5
mJ
36.2
mJ
409 120 632 188
ns ns ns ns
13.2
mJ
53.6
mJ
410 123 638 198
ns ns ns ns
14.4
mJ
56.1
mJ
1600
A
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GD400HFT120C2S_G8
IGBT Module
Diode Characteristics TC=25oC unless otherwise noted Symbol VF Qr IRM Erec Qr IRM Erec Qr IRM Erec
Parameter Diode Forward Voltage Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy
Test Conditions IF=400A,VGE=0V,Tj=25oC IF=400A,VGE=0V,Tj=125oC IF=400A,VGE=0V,Tj=150oC
Min.
Typ. 1.80 1.85 1.85 40.5
VR=600V,IF=400A, -di/dt=3350A/μs,VGE=-15V Tj=25oC VR=600V,IF=400A, -di/dt=3350A/μs,VGE=-15V Tj=125oC VR=600V,IF=400A, -di/dt=3350A/μs,VGE=-15V Tj=150oC
Max. 2.25
Unit V μC
259
A
19.7
mJ
67.9
μC
323
A
32.6
mJ
77.7
μC
342
A
38.3
mJ
Module Characteristics TC=25oC unless otherwise noted Symbol LCE RCC’+EE’ RθJC RθCS RθCS M G
Parameter
Stray Inductance Module Lead Resistance, Terminal to Chip Junction-to-Case (per IGBT) Junction-to-Case (per Diode) Case-to-Sink (per IGBT) Case-to-Sink (per Diode) Case-to-Sink Terminal Connection Torque, Screw M6 Mounting Torque, Screw M6 Weight of Module
©2015 STARPOWER Semiconductor Ltd.
Min.
Typ. 0.35
2.5 3.0
1/14/2015
0.123 0.162 0.035 300
4/9
Max. 20 0.072 0.095
Unit nH mΩ K/W K/W
5.0 5.0
K/W N.m g
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GD400HFT120C2S_G8
IGBT Module
800
800 VGE=15V
700 600
600 500
25oC
400
IC [A]
IC [A]
500
150oC
300
200
200
100
100 0
0.5
1
1.5 2 2.5 VCE [V]
3
0
3.5
Fig 1. IGBT Output Characteristics
5
6
7
25oC
8 9 10 11 12 13 VGE [V]
Fig 2. IGBT Transfer Characteristics 100
150 125
150oC
400
300
0
VCE=20V
700
VCC=600V RG=2.0Ω VGE=±15V Tj=150oC
90 Eoff
80 70
100 75
E [mJ]
E [mJ]
60 Eoff
Eon
40
50 25
50
30 Eon
VCC=600V IC=400A VGE=±15V Tj=150oC
20 10
0
0 100 200 300 400 500 600 700 800 IC [A] Fig 3. IGBT Switching Loss vs. IC ©2015 STARPOWER Semiconductor Ltd.
0
0 2 4 6 8 10 12 14 16 18 20 22 RG [Ω]
Fig 4. IGBT Switching Loss vs. RG 1/14/2015
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IGBT Module 0.1
Module
800
IGBT
700
ZthJC [K/W]
IC [A]
600 500 400
0.01
300 200
RG=2.0Ω VGE=±15V Tj=150oC
100 0
0
350
700 VCE [V]
i: 1 2 3 4 ri[K/W]: 0.0042 0.0239 0.0230 0.0209 0.01 0.02 0.05 0.1 τi[s]:
1050
0.001 0.001
1400
Fig 5. RBSOA
1
10
50 45
700
Erec
40
600
35
500
30 E [mJ]
IF [A]
0.1 t [s]
Fig 6. IGBT Transient Thermal Impedance
800
400 300
25 20
150oC
200
VCC=600V RG=2.0Ω VGE=-15V Tj=150oC
15 25oC
10
100 0
0.01
5 0
0.5
1 1.5 VF [V]
2
2.5
Fig 7. Diode Forward Characteristics ©2015 STARPOWER Semiconductor Ltd.
0
0 100 200 300 400 500 600 700 800 IF [A]
Fig 8. Diode Switching Loss vs. IF 1/14/2015
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IGBT Module 0.1
40
E [mJ]
36 Erec
32
ZthJC [K/W]
38
34
Diode
VCC=600V IF=400A VGE=-15V Tj=150oC
0.01
30 i: 1 2 3 4 ri[K/W]: 0.0057 0.0313 0.0304 0.0276 τi[s]: 0.01 0.02 0.05 0.1
28 26
0 2 4 6 8 10 12 14 16 18 20 22 RG [Ω]
Fig 9. Diode Switching Loss vs. RG
©2015 STARPOWER Semiconductor Ltd.
0.001 0.001
0.01
0.1 t [s]
1
10
Fig 10. Diode Transient Thermal Impedance
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GD400HFT120C2S_G8
IGBT Module
Circuit Schematic
Package Dimensions Dimensions in Millimeters
©2015 STARPOWER Semiconductor Ltd.
1/14/2015
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RY0A
GD400HFT120C2S_G8
IGBT Module
Terms and Conditions of Usage The data contained in this product datasheet is exclusively intended for technically trained staff. you and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. This product data sheet is describing the characteristics of this product for which a warranty is granted. Any such warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its characteristics. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of our product, please contact the sales office, which is responsible for you (see www.powersemi.cc), For those that are specifically interested we may provide application notes. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the Product in aviation applications, in health or live endangering or life support applications, please notify. If and to the extent necessary, please forward equivalent notices to your customers. Changes of this product data sheet are reserved.
©2015 STARPOWER Semiconductor Ltd.
1/14/2015
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