Transcript
GD450HFT120C6S_G8
IGBT Module
STARPOWER IGBT
SEMICONDUCTOR
GD450HFT120C6S_G8 Molding Type Module 1200V/450A 2 in one-package
General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS.
Features
Low VCE(sat) Trench IGBT technology Low switching loss 10μs short circuit capability Low inductance case VCE(sat) with positive temperature coefficient Fast & soft reverse recovery anti-parallel FWD Isolated copper baseplate using DBC technology
Typical Applications
Inverter for motor drive AC and DC servo drive amplifier Uninterruptible power supply
©2014 STARPOWER Semiconductor Ltd.
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Preliminary
GD450HFT120C6S_G8
IGBT Module
Absolute Maximum Ratings TC=25℃ unless otherwise noted Symbol VCES VGES IC ICM IF IFM PD Tjmax Tjop TSTG VISO M G
Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current @ TC=25℃ @ TC=100℃ Pulsed Collector Current tp=1ms Diode Continuous Forward Current Diode Maximum Forward Current tp=1ms Maximum Power Dissipation @ Tj=175℃ Maximum Junction Temperature Operating Junction Temperature Storage Temperature Range Isolation Voltage RMS,f=50Hz,t=1min Terminal Connection Torque, Screw M5 Mounting Torque, Screw M6 Weight of Module
GD450HFT120C6S_G8 1200 ±30 660 450 900 450 900 2083 175 -40 to +150 -40 to +125 2500 2.5 to 5.0 3.0 to 5.0 350
Units V V A A A A W ℃ ℃ ℃ V N.m g
Electrical Characteristics of IGBT TC=25℃ unless otherwise noted Off Characteristics Symbol V(BR)CES ICES IGES
Parameter Collector-Emitter Breakdown Voltage Collector Cut-Off Current Gate-Emitter Leakage Current
Test Conditions
Min.
Typ.
Max.
1200
Tj=25℃
Units V
VCE=VCES,VGE=0V, Tj=25℃ VGE=VGES,VCE=0V, Tj=25℃
5.0
mA
400
nA
On Characteristics Symbol VGE(th)
VCE(sat)
Parameter Gate-Emitter Threshold Voltage Collector to Emitter Saturation Voltage
Test Conditions IC=18.0mA,VCE=VGE, Tj=25℃ IC=450A,VGE=15V, Tj=25℃ IC=450A,VGE=15V, Tj=125℃
©2014 STARPOWER Semiconductor Ltd.
4/21/2014
Min.
Typ.
Max.
Units
5.0
5.6
6.5
V
1.70
2.15 V
1.95
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Preliminary
GD450HFT120C6S_G8
IGBT Module
Switching Characteristics Symbol td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff Cies Cres
Parameter Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Input Capacitance Reverse Transfer Capacitance
Min.
VCC=600V,IC=450A, RG=1.5Ω,VGE=±15V, Tj=25℃
VCC=600V,IC=450A, RG=1.5Ω,VGE=±15V, Tj=125℃
VCE=30V,f=1MHz, VGE=0V tP≤10μs,VGE=15V, Tj=125℃,VCC=900V, VCEM≤1200V
ISC
SC Data
RGint LCE
Internal Gate Resistance Stray Inductance Module Lead Resistance, Terminal To Chip
RCC’+EE’
Test Conditions
Typ. 360 140 550 146
Max.
Units ns ns ns ns
11.5
mJ
48.0
mJ
374 147 623 178
ns ns ns ns
17.9
mJ
64.5
mJ
39.0
nF
1.26
nF
1800
A
0.67 20
Ω nH
1.10
mΩ
Electrical Characteristics of Diode TC=25℃ unless otherwise noted Symbol VF Qr IRM Erec
Parameter Diode Forward Voltage Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy
Test Conditions Tj=25℃ IF=450A Tj=125℃ Tj=25℃ Tj=125℃ IF=450A, Tj=25℃ VR=600V, RG=1.5Ω, Tj=125℃ VGE=-15V Tj=25℃ Tj=125℃
©2014 STARPOWER Semiconductor Ltd.
4/21/2014
Min.
Typ. 1.65 1.65 41.6 77.5 241 325 23.2 43.1
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Max. 2.25
Units V μC A mJ
Preliminary
GD450HFT120C6S_G8
IGBT Module
NTC TC=25℃ unless otherwise noted Symbol R25 ∆R/R P25
Parameter Rated Resistance Deviation of R100 Power Dissipation
Test Conditions R100=493.3Ω
B25/50
B-value
R2=R25exp[B25/50(1/T21/(298.15K))]
Min.
Typ. 5.0
-5
Max. 5 20.0
3375
Units kΩ % mW K
Thermal Characteristics Symbol RθJC RθJC RθCS
Parameter Junction-to-Case (per IGBT) Junction-to-Case (per Diode) Case-to-Sink (Conductive grease applied)
©2014 STARPOWER Semiconductor Ltd.
Typ.
Max. 0.072 0.110
0.009
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Units K/W K/W K/W
Preliminary
GD450HFT120C6S_G8
IGBT Module
Equivalent Circuit Schematic
Package Dimensions Dimensions in Millimeters
9
8
7
6
5
4
10
11
3
1 2 A B
©2014 STARPOWER Semiconductor Ltd.
4/21/2014
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Preliminary
GD450HFT120C6S_G8
IGBT Module
Terms and Conditions of Usage The data contained in this product datasheet is exclusively intended for technically trained staff. you and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. This product data sheet is describing the characteristics of this product for which a warranty is granted. Any such warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its characteristics. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of our product, please contact the sales office, which is responsible for you (see www.powersemi.cc), For those that are specifically interested we may provide application notes. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the Product in aviation applications, in health or live endangering or life support applications, please notify. If and to the extent necessary, please forward equivalent notices to your customers. Changes of this product data sheet are reserved.
©2014 STARPOWER Semiconductor Ltd.
4/21/2014
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Preliminary
