Transcript
SUD40N08-16 Vishay Siliconix
N-Channel 80-V (D-S) 175_C MOSFET FEATURES
PRODUCT SUMMARY VDS (V)
rDS(on) (W)
ID (A)
80
0.016 @ VGS = 10 V
40
D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D 100% Rg Tested
D
TO-252
Drain Connected to Tab G
D
G
S
Top View Ordering Information:
S
SUD40N08-16 SUD40N08-16—E3 (Lead Free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter
Symbol
Limit
Drain-Source Voltage
VDS
80
Gate-Source Voltage
VGS
"20
Continuous Drain Current (TJ = 175_C)b
TC = 25_C TC = 125_C
Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Current Repetitive Avalanche Energy (Duty Cycle v 1%)
L = 0.1 mH TC = 25_C
Maximum Power Dissipation
TA = 25_C
Operating Junction and Storage Temperature Range
Unit V
40
ID
30
IDM
60
IS
40
IAR
40
EAR
80
A
mJ
136b PD
W
3a
TJ, Tstg
−55 to 175
_C
THERMAL RESISTANCE RATINGS Parameter J Junction-to-Ambient ti t A bi ta Junction-to-Case
Symbol t v 10 sec Steady State
RthJA RthJC
Typical
Maximum
15
18
40
50
0.85
1.1
Unit _C/W C/W
Notes a. Surface Mounted on 1” x1” FR4 Board. b. See SOA curve for voltage derating. Document Number: 71323 S-40272—Rev. C, 23-Feb-04
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SUD40N08-16 Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter
Typa
Symbol
Test Condition
Min
Max
V(BR)DSS
VGS = 0 V, ID = 250 mA
80
VGS(th)
VDS = VGS, ID = 250 mA
2.0
IGSS
VDS = 0 V, VGS = "20 V
"100
VDS = 80 V, VGS = 0 V
1
VDS = 80 V, VGS = 0 V, TJ = 125_C
50
VDS = 80 V, VGS = 0 V, TJ = 175_C
250
Unit
Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage
Zero Gate Voltage g Drain Current On-State Drain Currentb
IDSS ID(on)
VDS = 5 V, VGS = 10 V
60
rDS(on)
VGS = 10 V, ID = 40 A, TJ = 125_C
0.027
VGS = 10 V, ID = 40 A, TJ = 175_C
0.037
VGS = 10 V, ID = 40 A Drain-Source On-State Resistanceb Forward Transconductanceb
4.0
gfs
nA
mA m A
0.013
VDS = 15 V, ID = 40 A
V
0.016
45
W S
Dynamica Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Chargec
Qg
Gate-Source Chargec
Qgs
Gate-Drain
Chargec
Gate Resistance Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec
1960 VGS = 0 V, VDS = 25 V, F = 1 MHz
370 200 42
nC
13
Rg
0.5
td(on) tr
60
7
VDS = 40 V,, VGS = 10 V,, ID = 40 A
Qgd
td(off)
pF
VDD = 40 V, RL = 1.0 W ID ^ 40 A, VGEN = 10 V, Rg = 2.5 W
tf
2.7 12
20
52
80
25
38
10
15
W
ns
Source-Drain Diode Ratings and Characteristic (TC = 25_C) Pulsed Current
ISM
Diode Forward Voltageb
VSD
IF = 40 A, VGS = 0 V
1.0
1.5
V
trr
IF = 40 A, di/dt = 100 A/ms
45
70
ns
Source-Drain Reverse Recovery Time
60
A
Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. c. Independent of operating temperature.
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Document Number: 71323 S-40272—Rev. C, 23-Feb-04
SUD40N08-16 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics
Transfer Characteristics
100
100 VGS = 10 thru 7 V 80
60
I D − Drain Current (A)
I D − Drain Current (A)
80
6V
40
20
5V
3, 4 V
60
40
TC = 125_C
20
25_C −55_C
0
0 0
2
4
6
8
10
0
VDS − Drain-to-Source Voltage (V)
1
2
3
4
5
6
7
VGS − Gate-to-Source Voltage (V)
Transconductance
On-Resistance vs. Drain Current
80
0.04
25_C
60
r DS(on)− On-Resistance ( W )
g fs − Transconductance (S)
TC = −55_C
125_C 40
20
0
0.03
0.02 VGS = 10 V
0.01
0.00 0
20
40
60
80
100
0
20
40
ID − Drain Current (A)
V GS − Gate-to-Source Voltage (V)
C − Capacitance (pF)
Ciss
1500 1000 Crss
500
100
60
75
Gate Charge
20
2500 2000
80
ID − Drain Current (A)
Capacitance
3000
60
Coss
0
VDS = 10 V ID = 40 A
16
12
8
4
0 0
20
40
60
VDS − Drain-to-Source Voltage (V)
Document Number: 71323 S-40272—Rev. C, 23-Feb-04
80
0
15
30
45
Qg − Total Gate Charge (nC)
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SUD40N08-16 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
2.4
100 VGS = 10 V ID = 40 A 10
I S − Source Current (A)
rDS(on) − On-Resiistance (Normalized)
2.0 1.6 1.2 0.8
TJ = 150_C
1
TJ = 25_C
0.1
0.4 0.0 −50
−25
0
25
50
75
100
125
150
0.01
175
0
TJ − Junction Temperature (_C)
0.3
0.6
0.9
1.2
VSD − Source-to-Drain Voltage (V)
THERMAL RATINGS Maximum Avalanche Drain Current vs. Case Temperature 50
40
100 I D − Drain Current (A)
I D − Drain Current (A)
Safe Operating Area
1000
30
20
10
0 0
25
50
75
100
125
150
100 ms 10 1 ms 10 ms 1
0.1
175
100 ms 1 s, dc
TC = 25_C Single Pulse
0.1
1
10
100
VDS − Drain-to-Source Voltage (V)
TC − Case Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Case
2 1 Normalized Effective Transient Thermal Impedance
10 ms
Limited by rDS(on)
Duty Cycle = 0.5 0.2 0.1
0.1 0.02 0.05 Single Pulse 0.01 10−4
10−3
10−2
10−1
1
10
30
Square Wave Pulse Duration (sec) www.vishay.com
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Document Number: 71323 S-40272—Rev. C, 23-Feb-04
Legal Disclaimer Notice Vishay
Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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