Super Fast Recovery Diode Data Sheet Rf081m2s

Transcript

Data Sheet Super Fast Recovery Diode RF081M2S Land size figure (Unit : mm) Dimensions (Unit : mm) Series Standard Fast Recovery 0.1±0.1 　　　 0.05 1.2 0.85 1.6±0.1 2.6±0.1 ① 3.5±0.2 3.05 Applications General rectification PMDU Features 1)Small power mold type. (PMDU) 2)high switching speed 3)Low Reverse current Structure 0.9±0.1 0.8±0.1 ROHM : PMDU JEDEC :SOD-123 Manufacture Date Construction Silicon epitaxial planar Taping dimensions (Unit : mm) 4.0±0.1 1.81±0.1 Absolute maximum ratings (Tl=25°C) Parameter Symbol VRM Repetitive peak Reverse voltage VR Reverse voltage Average rectified forward current Io IFSM Tj Tstg Forward current surge peak Junction temperature Storage temperature Electrical characteristics (Tj=25°C) Parameter Symbol Limits 200 200 0.8 1.0 15 150 55 to 150 Forward voltage VF Reverse current IR Min. － － － Reverse recovery time trr － 12 25 Rth(j-l) － － 20 Thermal Resistance www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. φ1.0±0.1 8.0±0.2 3.71±0.1 0.25±0.05 1.75±0.1 φ1.55±0.05 2.0±0.05 3.5±0.05 4.0±0.1 1.5MAX Conditions Unit V V Direct voltage Glass epoxy substrate mounted A 50×50mm Glass epoxy substrate mounted A 60Hz half sin wave, Non-repetitive one cycle peak value, Tj=25°C °C °C Typ. 0.83 0.86 0.01 Max. 0.95 0.98 10 Conditions Unit μA IF=0.8A IF=1.0A VR=200V ns IF=0.5A,IR=1A,Irr=0.25*IR V °C/W junction to lead 1/3 2011.05 Data Sheet RF081M2S Electrical characteristics curves 10000 10 100 Tj=150℃ REVERSE CURRENT:IR(nA) Tj=150℃ Tj=25℃ 0.1 0.01 200 400 600 800 1000 Tj=125℃ 100 Tj=25℃ 10 1 0 50 100 150 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 0 200 800 AVE:818mV 750 10 AVE:10.8nA VF DISPERSION MAP REVERSE RECOVERY TIME:trr(ns) 60 AVE:69.5A 40 20 20 15 10 50 AVE:51.5pF 45 Ct DISPERSION MAP AVE:12.2ns Ifsm 8.3ms 100 10 1 0 1 trr DISPERSION MAP 1000 30 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS IM=10mA 10 20 15 10 AVE:13.6kV 5 0 1 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Rth(j-a) TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) ELECTROSTATIC DISCHARGE TEST ESD(KV) PEAK SURGE FORWARD CURRENT:IFSM(A) 100 25 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP 2/3 100 IF=0.5A No break at 30kV t 8.3ms 1cyc 5 IFSM DISPERSION MAP Ifsm 30 1000 Tj=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 25 0 1000 25 40 30 80 20 Tj=25℃ f=1MHz VR=0V n=10pcs IR DISPERSION MAP 100 15 55 1 700 10 60 Tj=25℃ VR=200V n=20pcs CAPACITANCE BETWEEN TERMINALS:Ct(pF) 850 REVERSE CURRENT:IR(nA) Tj=25℃ IF=1.0A n=20pcs 5 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 100 900 FORWARD VOLTAGE:VF(mV) 10 1 1200 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS PEAK SURGE FORWARD CURRENT:IFSM(A) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1 f=1MHz 1000 PEAK SURGE FORWARD CURRENT:IFSM(A) FORWARD CURRENT:IF(A) Tj=125℃ 1ms 100 time 300us Mounted on epoxy board Rth(j-c) 10 1 0.1 0.001 0.01 0.1 1 10 100 1000 TIME:t(s) Rth-t CHARACTERISTICS 2011.05 Data Sheet RF081M2S 0A Io 0V VR t half sin wave 0.6 D=0.2 D=0.1 0.4 D=0.05 0.2 D=t/T VR=1６0V Tj=150℃ D.C. 1.5 T D=0.8 D=0.5 1 half sin wave D=0.2 0.5 D=0.1 D.C. 1.5 D=0.8 D=0.5 1 half sin wave D=0.2 0.5 D=0.1 D=0.05 0 0 0.5 1 1.5 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2 D=t/T VR=160V Tj=150℃ T VR t D=0.8 D=0.5 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) FORWARD POWER DISSIPATION:Pf(W) 0V 2 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) D.C. 0.8 Io 0A 2 1 D=0.05 0 0 0 30 60 90 120 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 3/3 150 0 30 60 90 120 150 CASE TEMPARATURE:Tc(℃) Derating Curve(Io-Tc) 2011.05 Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A