Transcript
TCST110. up to TCST230. Vishay Semiconductors
Transmissive Optical Sensor with Phototransistor Output Description This device has a compact construction where the emitting-light sources and the detectors are located face-to-face on the same optical axis. The operating wavelength is 950 nm. The detector consists of a phototransistor.
B)
Applications
A)
D Contactless optoelectronic switch, control and counter 15136
Features D Compact construction D No setting efforts D Polycarbonate case protected against
95 10796
+
D
E
+
ambient light
D 2 case variations D 3 different apertures D CTR selected in groups
7.6 0.3”
(regarding fourth number of type designation)
Top view
Order Instruction Ordering Code TCST1103A) TCST2103B) TCST1202A) TCST2202B) TCST1300A) TCST2300B)
Document Number 83764 Rev. A5, 08–Jun–99
Resolution (mm) / Aperture (mm) 0.6 / 1.0 0.4
/
0.5
0.2
/
0.25
Remarks No mounting flags With two mounting flags No mounting flags With two mounting flags No mounting flags With two mounting flags
www.vishay.com 1 (9)
TCST110. up to TCST230. Vishay Semiconductors Absolute Maximum Ratings Input (Emitter) Parameter Reverse voltage Forward current Forward surge current Power dissipation Junction temperature
Test Conditions
tp ≤ 10 ms Tamb ≤ 25°C
Symbol VR IF IFSM PV Tj
Value 6 60 3 100 100
Unit V mA A mW °C
Symbol VCEO VECO IC ICM PV Tj
Value 70 7 100 200 150 100
Unit V V mA mA mW °C
Symbol Ptot Tamb Tstg Tsd
Value 250 –55 to +85 –55 to +100 260
Unit mW °C °C °C
Output (Detector) Parameter Collector emitter voltage Emitter collector voltage Collector current Collector peak current Power dissipation Junction temperature
Test Conditions
tp/T = 0.5, tp ≤ 10 ms Tamb ≤ 25°C
Coupler Parameter Total power dissipation Operating temperature range Storage temperature range Soldering temperature
www.vishay.com 2 (9)
Test Conditions Tamb ≤ 25°C
2 mm from case, t ≤ 5 s
Document Number 83764 Rev. A5, 08–Jun–99
TCST110. up to TCST230. Vishay Semiconductors Electrical Characteristics (Tamb = 25°C) Input (Emitter) Parameter Forward voltage Junction capacitance
Test Conditions IF = 60 mA VR = 0, f = 1 MHz
Symbol VF Cj
Min.
Typ. 1.25 50
Max. 1.6
Unit V pF
Test Conditions IC = 1 mA IE = 10 mA VCE = 25 V, IF = 0, E = 0
Symbol VCEO VECO ICEO
Min. 70 7
Typ.
Max.
Unit V V nA
Output (Detector) Parameter Collector emitter voltage Emitter collector voltage Collector dark current
100
Coupler Parameter Current transfer ratio
Collector current
Collector emitter saturation voltage g
Resolution, path of the shutter crossing g the radiant sensitive zone
Document Number 83764 Rev. A5, 08–Jun–99
Test Conditions VCE = 5 V, IF = 20 mA
VCE = 5 V, IF = 20 mA
IF = 20 mA, IC = 1 mA IF = 20 mA, IC = 0.5 mA IF = 20 mA, IC = 0.1 mA ICrel = 10 to 90%
Type Symbol TCST1103, CTR TCST2103 TCST1202, CTR TCST2202 TCST1300, CTR TCST2300 TCST1103, IC TCST2103 TCST1202, IC TCST2202 TCST1300, IC TCST2300 TCST1103, VCEsat TCST2103 TCST1202, VCEsat TCST2202 TCST1300, VCEsat TCST2300 TCST1103, s TCST2103 TCST1202, s TCST2202 TCST1300, s TCST2300
Min. 10
Typ. 20
Max.
Unit %
5
10
%
1.25
2.5
%
2
4
mA
1
2
mA
0.25
0.5
mA 0.4
V
0.4
V
0.4
V
0.6
mm
0.4
mm
0.2
mm
www.vishay.com 3 (9)
TCST110. up to TCST230. Vishay Semiconductors Switching Characteristics Parameter Turn-on time Turn-off time
IF
0
Test Conditions VS = 5 V, IC = 2 mA, RL = 100 ((see figure g 1))
Symbol ton toff
W
Typ. 10.0 8.0
+5V
IF
m m
96 11698
IC = 2 mA; adjusted through input amplitude
W
Unit s s
RG = 50 tp = 0.01 T tp = 50 s
IF
0
t
tp
m
IC 100% 90%
Channel I Channel II 50
W
100
W
y W x 20 pF
Oscilloscope RL 1M CL
10% 0
95 10897
t
tr
Figure 1. Test circuit, saturated operation
ts
td ton tp td tr ton (= td + tr)
tf toff
pulse duration delay time rise time turn-on time
ts tf toff (= ts + tf)
storage time fall time turn-off time
Figure 2. Switching times
www.vishay.com 4 (9)
Document Number 83764 Rev. A5, 08–Jun–99
TCST110. up to TCST230. Vishay Semiconductors Typical Characteristics (Tamb = 25_C, unless otherwise specified) 10000 ICEO– Collector Dark Current, with open Base ( nA )
P tot – Total Power Dissipation ( mW )
400
300 Coupled device 200 Phototransistor IR-diode
100
VCE=25V IF=0
1000
100
10
0
1 0
30
60
90
120
150
Tamb – Ambient Temperature ( °C )
95 11088
0 95 11090
Figure 3. Total Power Dissipation vs. Ambient Temperature
25
50
100
75
Tamb – Ambient Temperature ( °C )
Figure 6. Collector Dark Current vs. Ambient Temperature
1000.0
10.000
IC – Collector Current ( mA )
I F – Forward Current ( mA )
VCE=5V 100.0
10.0
1.0
0.1 0
VF – Forward Voltage ( V )
10.00 VCE=5V IF=20mA
IC – Collector Current ( mA )
CTR rel – Relative Current Transfer Ratio
1.0
1.5
1.0
0.5
0
25
50
75
100
Tamb – Ambient Temperature ( °C )
Figure 5. Relative Current Transfer Ratio vs. Ambient Temperature Document Number 83764 Rev. A5, 08–Jun–99
10.0
100.0
IF – Forward Current ( mA )
Figure 7. Collector Current vs. Forward Current
2.0
95 11089
0.010
96 12066
Figure 4. Forward Current vs. Forward Voltage
0 –25
0.100
0.001 0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
96 11862
1.000
IF=50mA 20mA 10mA
1.00
5mA 2mA 0.10 1mA
0.01 0.1 96 12067
1.0
10.0
100.0
VCE – Collector Emitter Voltage ( V )
Figure 8. Collector Current vs. Collector Emitter Voltage
www.vishay.com 5 (9)
TCST110. up to TCST230. Vishay Semiconductors 110
10.0
1.0
0.1 0.1
1.0
10.0
A=1mm
80 70
s
60 50 40 30 20 10 0 –0.5 –0.4 –0.3 –0.2 –0.1 –0.0 0.1 0.2 0.3 0.4 0.5 s – Displacement ( mm )
96 12005
Figure 9. Current Transfer Ratio vs. Forward Current
Figure 11. Relative Collector Current vs. Displacement 110
20
100
Non Saturated Operation VS=5V RL=100
15
I Crel – Relative Collector Current
t on / t off – Turn on / Turn off Time ( m s )
90
100.0
IF – Forward Current ( mA )
96 12068
0
100
VCE=5V
I Crel – Relative Collector Current
CTR – Current Transfer Ratio ( % )
100.0
W
10 ton 5 toff
95 11086
2
4
6
8
80
Figure 10. Turn on / off Time vs. Collector Current
s
70 60 50 40 30 20 10
0 –0.5 –0.4 –0.3 –0.2 –0.1 –0.0 0.1 0.2 0.3 0.4 0.5
10
IC – Collector Current ( mA )
A=0.5mm
90
0 0
0
s – Displacement ( mm )
96 12006
Figure 12. Relative Collector Current vs. Displacement 110 I Crel – Relative Collector Current
100
0
A=0.25mm
90 80 70
s
60 50 40 30 20 10 0 –0.5 –0.4 –0.3 –0.2 –0.1 –0.0 0.1 0.2 0.3 0.4 0.5
96 12007
s – Displacement ( mm )
Figure 13. Relative Collector Current vs. Displacement
www.vishay.com 6 (9)
Document Number 83764 Rev. A5, 08–Jun–99
TCST110. up to TCST230. Vishay Semiconductors Dimensions of TCST1.0. in mm
96 12094
Document Number 83764 Rev. A5, 08–Jun–99
www.vishay.com 7 (9)
TCST110. up to TCST230. Vishay Semiconductors Dimensions of TCST2.0. in mm
96 12095
www.vishay.com 8 (9)
Document Number 83764 Rev. A5, 08–Jun–99
TCST110. up to TCST230. Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
Document Number 83764 Rev. A5, 08–Jun–99
www.vishay.com 9 (9)
Legal Disclaimer Notice Vishay
Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000 Revision: 08-Apr-05
www.vishay.com 1
