Transcript
Three Phase Rectifier Bridges Slim Version
PSDS 162
IdAV VRRM
= 175 A = 800-1800 V
Preliminary Data Sheet VRSM V 800 1200 1400 1600 1800
VRRM V 800 1200 1400 1600 1800
Type PSDS 162/08 PSDS 162/12 PSDS 162/14 PSDS 162/16 PSDS 162/18
Symbol
Test Conditions
IdAV IFSM
TC = 90°C, module
2
∫ i dt
TVJ TVJM Tstg VISOL
Maximum Ratings 175
A
TVJ = 45°C VR = 0
t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine
1800 1950
A A
TVJ = TVJM VR = 0
t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine
1600 1800
A A
TVJ = 45°C VR = 0
t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine
16200 16200
A s 2 A s
TVJ = TVJM VR = 0
t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine
12800 13400
A s 2 A s
-40 ... + 150 150
°C °C
-40 ... + 125
°C
2500 3000 5 5
V∼ V∼ Nm Nm
225
g
50/60 HZ, RMS
t = 1 min t=1s
Md
IISOL ≤ 1 mA Mounting torque Terminal connection torque
Weight
typ.
(M6) (M6)
2
2
Features • Low profile (overall height: 17 mm) • Package with screw terminals • Isolation voltage 3000 V∼ • Planar glasspassivated chips • Blocking voltage up to 1800 V • Low forward voltage drop • UL release applied, RoHS conform Applications • Supplies for DC power equipment • Input rectifiers for PWM inverter • Battery DC power supplies • Field supply for DC motors Advantages • Easy to mount with two screws • Space and weight savings • Improved temperature and power cycling capability Package, style and outline Dimensions in mm (1mm = 0.0394“)
Symbol
Test Conditions
Characteristic Value
IR
VR = VRRM VR = VRRM
TVJ = 25°C TVJ = TVJM
≤ ≤
0.3 5
mA mA
VF VTO rT RthJC
IF = 300 A
TVJ = 25°C
≤
1.55
V
0.8 3
V
per diode; DC current per module
0.65 0.108
mΩ K/W K/W
RthJK
per diode; DC current per module
0.83 0.138
K/W K/W
dS
Creeping distance on surface
10.0
mm
dA a
Creeping distance in air
9.4
Max. allowable acceleration
50
For power-loss calculations only TVJ = TVJM
Max. allowed screw-in depth: 7.2 mm
mm m/s
2
POWERSEM GmbH, Walpersdorfer Str. 53 2009 POWERSEM reserves the right to change limits, test conditions and dimensions 91126 D- Schwabach Phone: 09122 - 9764-0 Email:
[email protected] Fax.: 09122 - 9764-20
PSDS 162 IF(OV) -----IFSM
200
5 10 2 As
IFSM (A)
[A]
TVJ=45°C 1.6
TVJ=150°C
1800
1600
150 1.4
10
1.2
100
TVJ=45°C
4
TVJ=150°C 1 0 VRRM
0.8
50
1/2 VRRM
Tvj = 150°C IF
0.6
1 VRRM
Tvj = 25°C
0 0.5
1 1.5 VF [V]
10 10
Fig. 1 Forward current versus voltage drop per diode
600 [W]
1
0.4
2
3
0
10
1
t[ms]
10
2
10
2
3
Fig. 2 Surge overload current per diode IFSM: Crest value. t: duration
4 t [ms]
6
10
2
Fig. 3 ∫i dt versus time (1-10ms) per diode (or thyristor)
70
TC 75
PSD 162 PSDS 162
0.08 0.04
500
= RTHCA [K/W]
0.12
80 85 90
200 DC [A]
sin.180°
95
400
100
0.2
rec.120° rec.60°
150
105 110
300
rec.30° 125
115
0.37
200
125
DC sin.180° rec.120° rec.60° rec.30°
100 PVTOT 0
120
125
75
130
0.87
135
50
140 145
°C
150
25 75 IFAVM
100
175 0 [A]
50
100
Tamb
150 [K]
Fig. 4 Power dissipation versus direct output current and ambient temperature
25 IdAV 0 50
100
150
200
TC(°C)
Fig.5 Maximum forward current at case temperature
1 K/W
Z thJK
0.8 Z thJC
0.6
0.4
0.2 Z th
0.01
0.1
1
10
t[s]
Fig. 6 Transient thermal impedance per diode (or thyristor), calculated
POWERSEM GmbH, Walpersdorfer Str. 53 2009 POWERSEM reserves the right to change limits, test conditions and dimensions 91126 D- Schwabach Phone: 09122 - 9764-0 Email:
[email protected] Fax.: 09122 - 9764-20
