Transcript
VDRM IT(AV)M IT(RMS) ITSM VT0 rT
= = = = = =
1800 V 730 A 1150 A 9×103 A 0.8 V 0.54 mΩ
Phase Control Thyristor
5STP 07D1800 Doc. No. 5SYA1027-06 May 07
•
Patented free-floating silicon technology
•
Low on-state and switching losses
•
Designed for traction, energy and industrial applications
•
Optimum power handling capability
Blocking Maximum rated values
1)
Symbol Conditions
Parameter
Max repetitive peak forward VDRM, and reverse blocking voltage VRRM
5STP 07D1800
Unit
1800
V
1000
V/µs
f = 50 Hz, tp = 10 ms, Tvj = 5…125°C, Note 1
VAK VDRM,VRRM tp Critical rate of rise of commutating voltage
dv/dtcrit
t
Exp. to 1210 V, Tvj = 125°C
Characteristic values
Parameter
Symbol Conditions
min
typ
max
Unit
Forward leakage current
IDRM
VDRM, Tvj = 125°C
100
mA
Reverse leakage current
IRRM
VRRM, Tvj = 125°C
100
mA
Note 1: Voltage de-rating factor of 0.11% per °C is applicable for Tvj below +5 °C
Mechanical data Maximum rated values
1)
Parameter
Symbol Conditions
Mounting force
FM
Acceleration
a
Acceleration
a
min 8
typ 10
max
Unit
12
kN
Device unclamped
50
m/s
2
Device clamped
100
m/s
2
Characteristic values
Parameter
Symbol Conditions
Weight
m
Housing thickness
H
Surface creepage distance
DS
25
mm
Air strike distance
Da
14
mm
FM = 10 kN, Ta = 25 °C
min
typ
25.6
1) Maximum rated values indicate limits beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
max
Unit
0.3
kg
26.2
mm
5STP 07D1800
On-state Maximum rated values
1)
Parameter
Symbol Conditions
Average on-state current
IT(AV)M
RMS on-state current
IT(RMS)
Peak non-repetitive surge current
ITSM
Limiting load integral
I2t
Peak non-repetitive surge current
ITSM
Limiting load integral
I2t
min
typ
Half sine wave, Tc = 70 °C
max
Unit
730
tp = 10 ms, Tvj = 125 °C, sine wave after surge: VD = VR= 0 V
A
1150
A
3
A
9×10
3
A2s
3
A
3
A2s
405×10 9.5×10
tp = 8.3 ms, Tvj = 125 °C, sine wave after surge: VD = VR= 0 V
374×10
Characteristic values
Parameter
Symbol Conditions
On-state voltage
VT
IT = 1500 A, Tvj = 125 °C
1.6
V
Threshold voltage
V(T0)
IT = 500 A - 1500 A, Tvj= 125 °C
0.8
V
Slope resistance
rT
0.54
mΩ
Holding current
IH
Tvj = 25 °C
70
mA
Tvj = 125 °C
50
mA
Tvj = 25 °C
500
mA
Tvj = 125 °C
200
mA
Latching current
Switching Maximum rated values
IL
min
typ
max
Unit
1)
Parameter
Symbol Conditions
Critical rate of rise of onstate current
di/dtcrit
Critical rate of rise of onstate current
di/dtcrit
Circuit-commutated turn-off tq time
min
Tvj = 125 °C,
Cont.
ITRM = 1500 A,
f = 50 Hz
VD ≤1210 V,
Cont.
IFG = 2 A, tr = 0.5 µs
f = 1Hz
Tvj = 125°C, ITRM = 2000 A, VR = 200 V, diT/dt = -1.5 A/µs, VD ≤ 0.67⋅VDRM, dvD/dt = 20 V/µs
typ
max
Unit
150
A/µs
1000
A/µs
400
µs
Characteristic values
Parameter
Symbol Conditions
Reverse recovery charge
Qrr
Reverse recovery current
IRM
Gate turn-on delay time
tgd
Tvj = 125°C, ITRM = 2000 A, VR = 200 V, diT/dt = -1.5 A/µs
min
typ
max
Unit
250
600
µAs
17
35
A
3
µs
Tvj = 25 °C, VD = 0.4⋅VRM, IFG = 2 A, tr = 0.5 µs
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1027-06 May 07
page 2 of 7
5STP 07D1800
Triggering Maximum rated values
1)
Parameter
Symbol Conditions
Peak forward gate voltage
VFGM
min
typ
max 12
V
Peak forward gate current
IFGM
10
A
Peak reverse gate voltage
VRGM
10
V
Average gate power loss
PG(AV)
see Fig. 9
Unit
W
Characteristic values
Parameter
Symbol Conditions
Gate-trigger voltage
VGT
Tvj = 25 °C
min
typ
max 2.6
Unit V
Gate-trigger current
IGT
Tvj = 25 °C
400
mA
Gate non-trigger voltage
VGD
VD = 0.4 x VDRM, Tvjmax = 125 °C
0.3
V
Gate non-trigger current
IGD
VD = 0.4 x VDRM, Tvjmax = 125°C
10
mA
Thermal Maximum rated values
1)
Parameter
Symbol Conditions
Operating junction temperature range
Tvj
min
max
Unit
125
°C
140
°C
max
Unit
Double-side cooled Fm = 8...12 kN
36
K/kW
Rth(j-c)A
Anode-side cooled Fm = 8...12 kN
70
K/kW
Rth(j-c)C
Cathode-side cooled Fm = 8...12 kN
74
K/kW
Double-side cooled Fm = 8...12 kN
7.5
K/kW
Single-side cooled Fm = 8...12 kN
15
K/kW
Storage temperature range Tstg
typ
-40
Characteristic values
Parameter
Symbol Conditions
Thermal resistance junction Rth(j-c) to case
Thermal resistance case to Rth(c-h) heatsink Rth(c-h)
min
typ
Analytical function for transient thermal impedance:
n
Z th(j- c) (t) = ∑ R i (1 - e- t/τ i ) i =1
i
1
2
3
4
Ri(K/kW)
19.180
9.820
5.450
1.440
τi(s)
0.3862
0.0561
0.0058
0.0024
Fig. 1 Transient thermal impedance (junction-tocase) vs. time
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1027-06 May 07
page 3 of 7
5STP 07D1800
Fig. 2 On-state voltage characteristics
Fig. 3 On-state characteristics, Tj = 125°C, 10ms half sine
Fig. 4 On-state power dissipation vs. mean on-state current, turn-on losses excluded
Fig. 5 Max. permissible case temperature vs. mean on-state current, switching losses ignored
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1027-06 May 07
page 4 of 7
5STP 07D1800
Fig. 6 Surge on-state current vs. pulse length, half-sine wave IG (t) 100 % 90 %
IGM
IGM IGon diG/dt tr tp(IGM)
Fig. 7 Surge on-state current vs. number of pulses, half-sine wave, 10 ms, 50Hz
≈ 2..5 A ≥ 1.5 IGT ≥ 2 A/µs ≤ 1 µs ≈ 5...20 µs
diG/dt
IGon
10 % tr
t tp (IGM)
tp (IGon)
Fig. 8 Recommended gate current waveform
Fig. 9 Max. peak gate power loss
Fig. 10 Reverse recovery charge vs. decay rate of on-state current
Fig. 11 Peak reverse recovery current vs. decay rate of on-state current
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1027-06 May 07
page 5 of 7
5STP 07D1800
Turn-on and Turn-off losses
Fig. 12 Turn-on energy, half sinusoidal waves
Fig. 13 Turn-on energy, rectangular waves
Fig. 14 Turn-off energy, half sinusoidal waves
Fig. 15 Turn-off energy, rectangular waves
Total power loss for repetitive waveforms:
IT(t)
IT(t), V(t)
PTOT = PT + Won ⋅ f + Woff ⋅ f
-diT/dt
where
t
Qrr
V(t) -IRRM
-V0
T
1 PT = ∫ IT ⋅ VT (IT ) dt T 0
-dv/dtcom -VRRM Fig. 16 Current and voltage waveforms at turn-off
Fig. 17 Relationships for power loss
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1027-06 May 07
page 6 of 7
5STP 07D1800
H
ø
ø
Fig. 18 Device Outline Drawing
Related documents: 5SYA 2020 5SYA 2049 5SYA 2051 5SYA 2034 5SYA 2036 5SZK 9104 5SZK 9105
Design of RC-Snubber for Phase Control Applications Voltage definitions for phase control thyristors and diodes Voltage ratings of high power semiconductors Gate-Drive Recommendations for PCT's Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors Specification of environmental class for pressure contact diodes, PCTs and GTO, STORAGE available on request, please contact factory Specification of environmental class for pressure contact diodes, PCTs and GTO, TRANSPORTATION available on request, please contact factory
Please refer to http://www.abb.com/semiconductors for current version of documents.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet
+41 (0)58 586 1419 +41 (0)58 586 1306
[email protected] www.abb.com/semiconductors
Doc. No. 5SYA1027-06 May 07
