Transcript
TP0205A/AD New Product
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET, Low-Threshold PRODUCT SUMMARY VDS (V) –20
rDS(on) (W)
ID (mA)
3.8 @ VGS = –4.5 V
–180
5.0 @ VGS = –2.5 V
–100
FEATURES
BENEFITS
APPLICATIONS
D D D D D
D D D D D
D Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories D Battery Operated Systems D Load/Power Switching-Cell Phones, PDA
High-Side Switching Low On-Resistance: 2.6 W (typ) Low Threshold: 0.9 V (typ) Fast Switching Speed: 35 ns 2.5 V or Lower Operation
Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation
SOT-363
SOT-323
SC-70 (6-Leads)
SC-70 (3-Leads) G
1 3
S
D
2
S1
1
6
D1
G1
2
5
G2
D2
3
4
S2
Marking Code: TP0205A: Al TP0205AD: Cwl w = Week Code l = Lot Traceability
Order Number: TP0205AD
Order Number: TP0205A
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter
Symbol
TP0205A
TP0205AD
Drain-Source Voltage
VDS
–20
Gate-Source Voltage
VGS
"8
Continuous Drain Current (TJ = 150_C) _ a
TA = 25_C TA = 70_C
Pulsed Drain Current TA = 25_C TA = 70_C
Operating Junction and Storage Temperature Range
PD
V
–180
ID
mA
–140
IDM
Maximum Power Dissipationa
Unit
–500 0.15
0.20 (Total)
0.10
0.13 (Total)
TJ, Tstg
W _C
–55 to 150
THERMAL RESISTANCE RATINGS Parameter Thermal resistance, Junction-to-Ambienta
Symbol
TP0205A
TP0205AD
Unit
RthJA
833
625 (Total)
_C/W
Notes a. Surface Mounted on FR4 Board, t v 10 sec. Document Number: 70869 S-04279—Rev. B, 16-Jul-01
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TP0205A/AD New Product
Vishay Siliconix
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter
Symbol
Test Condition
Min
Typb
V(BR)DSS
VDS = 0 V, ID = –10 mA
–20
–24
VGS(th)
VDS = VGS, ID = –50 mA
–0.4
–0.9
–1.5
IGSS
VDS = 0 V, VGS = "8 V
"2
"100
VDS = –20 V, VGS = 0 V
–0.001
–100
Max
Unit
Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea Forward Transconductancea Diode Forward
Voltagea
V
nA
IDSS
–1
VDS = –20 V, VGS = 0 V, TJ = 55_C
ID(on)
VGS = –4.5 V, VDS = –8.0 V
–400
VGS = –2.5 V, VDS = –5.0 V
–120
mA
VGS = –4.5 V, ID = –180 mA
2.6
3.8
–75 mA
4.0
5.0
gfs
VDS = –2.5 V, ID = –50 mA
200
VSD
IS = –50 mA, VGS = 0 V
–0.7
–1.2
350
450
rDS(on)
VGS = –2.5 V, ID =
mA
W mS V
Dynamic Total Gate Charge
Qg VDS = –5.0 V, VGS = –4.5 V, ID = –100 mA
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
125
Input Capacitance
Ciss
20
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS = –5.0 V, VGS = 0 V, f = 1 MHz
pC
25
14
pF
5
Switching c Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
td(on)
7
12
tr
25
35
19
30
9
15
td(off)
VDD = –3.0 V, RL = 100 W ID = –0.25 A, VGEN = –4.5 V, RG = 10 W
tf
Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. For design only, not subject to production testing. c. Switching time is essentially independent of operating temperature.
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ns
VPOJ
Document Number: 70869 S-04279—Rev. B, 16-Jul-01
TP0205A/AD New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Output Characteristics
Transfer Characteristics –0.5
–1.2
–0.4 ID – Drain Current (A)
ID – Drain Current (A)
TJ = –55_C
5V
–1.0 4.5 V –0.8
–4 V
–0.6
–3.5 V –3 V
–0.4
–2.5 V
–0.2
25_C –0.3 125_C –0.2
–0.1
–2 V 0.0 0
–1
–2
–3
0.0 0.0
–4
–0.5
VDS – Drain-to-Source Voltage (V)
–1.0
–1.5
–2.0
–2.5
–3.0
VGS – Gate-to-Source Voltage (V)
Capacitance
On-Resistance vs. Drain Current 8
45
36 6
C – Capacitance (pF)
rDS(on) – On-Resistance ( Ω )
VGS = 0 V f = 1 MHz
VGS = –2.5 V 4 VGS = –4.5 V
27 Ciss 18 Coss
2 9
0 0.0
Crss
0 –0.5
–1.0
–1.5
–2.0
–2.5
–3.0
0
–3
ID – Drain Current (A)
–12
On-Resistance vs. Junction Temperature 1.6
VDS = –6 V ID = 80 mA
–8
rDS(on) – On-Resistance ( Ω ) (Normalized)
VGS – Gate-to-Source Voltage (V)
–9
VDS – Drain-to-Source Voltage (V)
Gate Charge
–10
–6
–6
–4
1.4
VGS = –4.5 V ID = –180 mA
1.2
1.0
0.8
–2
0 0
100
200
300
400
Qg – Total Gate Charge (pC)
Document Number: 70869 S-04279—Rev. B, 16-Jul-01
500
600
0.6 –50
–25
0
25
50
75
100
125
150
TJ – Junction Temperature (_C)
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TP0205A/AD New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage 6
–1
5 rDS(on) – On-Resistance ( Ω )
LS – Source Current (A)
TJ = 150_C
–0.1
TJ = 25_C
–0.01
4 ID = –180 mA 3
2
1
–0.001 0.00
–0.5
–1.0
0 –1.0
1.5
–1.5
VSD – Source-to-Drain Voltage (V)
–2.0
–2.5
–3.0
–3.5
–4.0
–4.5
VGS – Gate-to-Source Voltage (V)
Threshold Voltage 0.3 ID = –50 mA
VGS(th) – Variance (V)
0.2
0.1
0.0
–0.1
–0.2 –50
–25
0
25
50
75
100
125
150
TJ – Junction Temperature (_C)
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Document Number: 70869 S-04279—Rev. B, 16-Jul-01
Legal Disclaimer Notice Vishay
Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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