Transcript
TP0606 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS
RDS(ON) (max)
ID(ON) (min)
VGS(th) (max)
Order Number / Package
-60V
3.5Ω
-1.5A
-2.4V
TP0606N3
TO-92
Features
Low Threshold DMOS Technology
❏ Low threshold — -2.4V max
These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown.
❏ High input impedance ❏ Low input capacitance — 80pF typical ❏ Fast switching speeds ❏ Low on resistance ❏ Free from secondary breakdown
Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
❏ Low input and output leakage ❏ Complementary N- and P-channel devices
Applications Package Options
❏ Logic level interfaces – ideal for TTL and CMOS ❏ Solid state relays ❏ Battery operated systems ❏ Photo voltaic drives ❏ Analog switches ❏ General purpose line drivers ❏ Telecom switches
Absolute Maximum Ratings SGD
Drain-to-Source Voltage
BVDSS
Drain-to-Gate Voltage
BVDGS
Gate-to-Source Voltage
± 20V
Operating and Storage Temperature Soldering Temperature*
TO-92
-55°C to +150°C 300°C
* Distance of 1.6 mm from case for 10 seconds.
Note 1: See Package Outline section for dimensions. Note 2: See Array section for quad pinouts.
11/12/01 Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
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TP0606
Thermal Characteristics Package
ID (continuous)*
TO-92
ID (pulsed)
0.32A
Power Dissipation @ TC = 25°C
-3.5A
θjc °C/W
1W
θja °C/W
125
170
IDR*
IDRM
0.32A
-3.5A
* ID (continuous) is limited by max rated Tj.
Electrical Characteristics (@ 25°C unless otherwise specified) Symbol
Parameter
Min
BVDSS
Drain-to-Source Breakdown Voltage
-60
VGS(th)
Gate Threshold Voltage
-1.0
∆V GS(th)
Typ
Max
Unit
Conditions
V
VGS = 0V, ID = -2.0mA
-2.4
V
VGS = VDS, ID = -1.0mA
Change in VGS(th) with Temperature
-5.0
mV/°C
VGS = VDS, ID = -1.0mA
IGSS
Gate Body Leakage
-100
nA
VGS = ±20V, VDS = 0V
IDSS
Zero Gate Voltage Drain Current
-10
µA
VGS = 0V, VDS = Max Rating
-1.0
mA
VGS = 0V, VDS = 0.8 Max Rating TA = 125°C
ON-State Drain Current
RDS(ON)
Static Drain-to-Source ON-State Resistance
-0.4
-0.6
-1.5
-2.5 5.0 3.0
VGS = -10V, VDS = -25V
7.0
Change in RDS(ON) with Temperature
1.7
GFS
Forward Transconductance
CISS
Input Capacitance
80
150
COSS
Common Source Output Capacitance
50
85
CRSS
Reverse Transfer Capacitance
15
35
td(ON)
Turn-ON Delay Time
10
tr
Rise Time
15
td(OFF)
Turn-OFF Delay Time
20
tf
Fall Time
15
VSD
Diode Forward Voltage Drop
trr
Reverse Recovery Time
VGS = -10V, ID = -0.75A
%/°C
VGS = -10V, ID = -0.75A VDS = -25V, ID = -0.75A
400
m
pF
VGS = 0V, VDS = -25V f = 1 MHz
ns
VDD = -25V ID = -1.0A RGEN = 25Ω
-1.8 300
VGS = -5V, ID = -250mA
Ω
3.5
∆RDS(ON)
300
VGS = -5V, VDS = -25V
A
Ω
ID(ON)
V
VGS = 0V, ISD = -1.0A
ns
VGS = 0V, ISD = -1.0A
Notes: 1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit 0V
10%
PULSE GENERATOR
INPUT 90%
-10V
t(ON)
td(ON)
Rgen
t(OFF) td(OFF)
tr
tF
D.U.T.
0V
90%
OUTPUT
INPUT
90%
RL
OUTPUT VDD
10%
10% VDD
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TP0606
Typical Performance Curves Saturation Characteristics -5
-4
-4
ID (amperes)
ID (amperes)
Output Characteristics -5
-3 VGS = -10V -2
-3 VGS = -10V -2
-8V -1
-8V -1
-6V
-6V -4V
-4V 0
0 0
-10
-20
-30
-40
-50
0
-2
-4
VDS (volts)
-6
-8
-10
VDS (volts) Power Dissipation vs. Case Temperature
Transconductance vs. Drain Current 0.6
2.0
V = -25V VDS DS = -25V
T A = -55°C
T A = 25°C 0.4
PD (watts)
GFS (siemens)
0.5
T A = 150°C 0.3
TO-92 1.0
0.2
0
0 0
-0.4
-0.8
-1.2
-1.6
-2.0
-2.4
-2.8
-3.2
0
25
50
ID (amperes)
100
125
150
TC (°C) Thermal Response Characteristics
Maximum Rated Safe Operating Area 1.0
-10
Thermal Resistance (normalized)
T C = 25°C
ID (amperes)
75
-1.0
-0.1
TO-92 (DC)
-0.01 -1
-10
-100
0.8
0.6
0.4
0.2
0 0.001
-1000
VDS (volts)
TO-92 P D = 1W T C = 25°C 0.01
0.1
tp (seconds)
3
1
10
TP0606
Typical Performance Curves BVDSS Variation with Temperature
On-Resistance vs. Drain Current 15
1.1
VGS = -5V
RDS(ON) (ohms)
BVDSS (normalized)
12
1.0
9
VGS = -10V 6
3
0
0.9 -50
0
50
100
0
150
-0.8
-1.6
Tj (°C)
-2.4
-3.2
-4.0
ID (amperes) V(th) and RDS Variation with Temperature
Transfer Characteristics
2.0
-5 1.4
RDS(ON) @ -10V, -0.75A
-3
=
° 55
VGS(th) (normalized)
ID (amperes)
-4
C
-
TA
-2
=
°C 25
TA
0°
-1
5 =1
TA
1.6
1.2 1.2 1.0 0.8 0.8
V(th) @ -1mA
RDS(ON) (normalized)
VDS = -25V
0.4
C 0.6
0
0 0
-2
-4
-6
-8
-10
-50
0
50
VGS (volts)
100
150
Tj (°C)
Capacitance vs. Drain-to-Source Voltage
Gate Drive Dynamic Characteristics
200
-10
f = 1MHz
VDS = -10V
-8
200 pF
VGS (volts)
C (picofarads)
150
100
CISS
-6
VDS = -40V
-4
COSS
50
-2
CRSS
75 pF
0
0 0
-10
-20
-30
-40
0
VDS (volts)
0.5
1.0
1.5
2.0
2.5
QG (nanocoulombs)
11/12/01
©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
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