Transcript
TS117 Multifunction Telecom Switch
INTEGRATED CIRCUITS DIVISION Parameter Blocking Voltage Load Current On-Resistance (max)
Rating 350 120 35
Description The TS117 integrated circuit device combines a 350V normally open (1-Form-A) relay with an optocoupler in a single package. The relay uses optically coupled MOSFET technology to provide 3750Vrms of input to output isolation.
Units VP mArms / mADC
Features • 3750Vrms Input/Output Isolation • Low Drive Power Requirements (TTL/CMOS Compatible) • FCC Compatible • VDE Compatible • No EMI/RFI Generation • No Moving Parts • High Reliability • Arc-Free With No Snubbing Circuits • Small 8-Pin Package • Machine Insertable, Wave Solderable • Surface Mount and Tape & Reel Versions Available
Its optically coupled relay outputs, which use the patented OptoMOS architecture, are controlled by a highly efficient GaAIAs infrared LED. The TS117 enables telecom circuit designers to combine two discrete functions in a single component that uses less space than traditional discrete component solutions. Approvals • UL Recognized Component: File E76270 • CSA Certified Component: Certificate 1175739 • EN/IEC 60950 Certified Component: TUV Certificate: B 10 05 49410 006
Applications • Telecommunications • Telecom Switching • Tip/Ring Circuits • Modem Switching (Laptop, Notebook, Pocket Size) • Hook Switch • Dial Pulsing • Ground Start • Ringing Injection • Instrumentation • Multiplexers • Data Acquisition • Electronic Switching • I/O Subsystems • Meters (Watt-Hour, Water, Gas) • Medical Equipment-Patient/Equipment Isolation • Security • Aerospace • Industrial Controls
Ordering Information Part # TS117 TS117P TS117PTR TS117S TS117STR
Description 8-Pin DIP (50/Tube) 8-Pin Flatpack (50/Tube) 8-Pin Flatpack (1000/Reel) 8-Pin Surface Mount (50/Tube) 8-Pin Surface Mount (1000/Reel)
Pin Configuration + LED - Relay – LED - Relay Collector - Phototransistor Emitter - Phototransistor
1
8
2
7
3
6
4
5
Load - Relay (MOSFET Output) Load - Relay (MOSFET Output) LED - Phototransistor –/+ LED - Phototransistor +/–
Switching Characteristics of Normally Open Devices Form-A IF 90% 10%
ILOAD ton
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INTEGRATED CIRCUITS DIVISION
TS117
Absolute Maximum Ratings @ 25ºC Parameter Blocking Voltage Input Power Dissipation 1 Input Control Current, Relay Peak (10ms) Input Control Current, Detector Reverse Input Voltage Total Power Dissipation 2 Isolation Voltage, Input to Output Operational Temperature Storage Temperature 1
Derate linearly 1.33 mW / ºC
2
Derate linearly 6.67 mW / ºC
Ratings 350 150 50 1 100 5 800 3750 -40 to +85 -40 to +125
Absolute Maximum Ratings are stress ratings. Stresses in excess of these ratings can cause permanent damage to the device. Functional operation of the device at conditions beyond those indicated in the operational sections of this data sheet is not implied.
Units VP mW mA A mA V mW Vrms °C °C
Electrical Characteristics @25ºC: Relay Section Parameter Output Characteristics Load Current Continuous Peak On-Resistance Off-State Leakage Current Switching Speeds Turn-On Turn-Off Output Capacitance Input Characteristics Input Control Current to Activate Input Control Current to Deactivate Input Voltage Drop Reverse Input Current Common Characteristics Input to Output Capacitance
Conditions
Symbol
Min
Typ
Max
Units
t=10ms IL=120mA VL=350V
IL ILPK RON ILEAK
-
23 -
120 ±350 35 1
mArms / mADC mAP
VL=50V, f=1MHz
ton toff COUT
-
25
3 3 -
ms ms pF
IL=120mA IF=5mA VR=5V
IF IF VF IR
0.4 0.9 -
0.7 1.2 -
2 1.4 10
mA mA V A
-
CI/O
-
3
-
pF
IF=5mA, VL=10V
A
Electrical Characteristics @25ºC: Detector Section Parameter Output Characteristics Phototransistor Blocking Voltage Phototransistor Dark Current Saturation Voltage Current Transfer Ratio Input Characteristics Input Control Current Input Voltage Drop Input Current (Detector Must be Off) Isolation, Input to Output
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Conditions
Symbol
Min
Typ
Max
Units
IC=10A VCE=5V, IF=0mA IC=2mA, IF=16mA IF=6mA, VCE=0.5V
BVCEO ICEO VSAT CTR
20 33
50 50 0.3 100
500 0.5 -
V nA V %
IC=2mA, VCE=0.5V IF=5mA IC=1A, VCE=5V -
IF VF IF VI/O
0.9 5 3750
2 1.2 25 -
6 1.4 -
mA V A Vrms
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INTEGRATED CIRCUITS DIVISION
TS117
RELAY PERFORMANCE DATA @25ºC (Unless Otherwise Noted)*
25 20 15 10 5
25
20
20
15 10 5 0
0 1.17
25
1.19
1.21
1.23
15 10 5 0
0.15
1.25
0.45
0.75
1.05
1.35
1.65
1.95
0.035 0.105 0.175 0.245 0.315 0.385 0.455
LED Forward Voltage Drop (V)
Turn-On Time (ms)
Turn-Off Time (ms)
Typical IF for Switch Operation (N=50, IL=120mADC)
Typical IF for Switch Dropout (N=50, IL=120mADC)
Typical On-Resistance Distribution (N=50, IF=2mA, IL=120mADC, VL=350VDC)
25
20
Device Count (N)
Device Count (N)
25
Device Count (N)
Device Count (N)
Device Count (N)
30
Typical Turn-Off Time (N=50, IF=2mA, IL=120mADC)
15 10 5
35 30
20
Device Count (N)
35
Typical Turn-On Time (N=50, IF=2mA, IL=120mADC)
Typical LED Forward Voltage Drop (N=50, IF=5mA)
15 10 5
0.39
0.65
0.91
1.17
1.43
1.69
20 15 10 5
0
0
25
0 0.39
1.95
0.65
0.91
1.17
1.43
1.69
18.75 19.85 20.95 22.05 23.15 24.25 25.35
1.95
On-Resistance (:)
LED Current (mA)
LED Current (mA)
Typical Blocking Voltage Distribution (N=50) 35
Device Count (N)
30 25 20 15 10 5 0 377.5 388.5 399.5 410.5 421.5 432.5 443.5 Blocking Voltage (VP)
Typical Turn-On Time vs. LED Forward Current (IL=120mADC)
1.6 1.4
IF=50mA IF=30mA IF=20mA IF=10mA IF=5mA
1.2 1.0 0.8 -40
-20
0
20
40
60
Temperature (ºC)
80
100
120
2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0
Typical Turn-Off Time vs. LED Forward Current (IL=120mADC)
0.7 0.6 Turn-Off Time (ms)
1.8 Turn-On Time (ms)
LED Forward Voltage Drop (V)
Typical LED Forward Voltage Drop vs. Temperature
0.5 0.4 0.3 0.2 0.1 0
0
5
10
15
20
25
30
35
40
LED Forward Current (mA)
45
50
0
5
10
15
20
25
30
35
40
45
50
LED Forward Current (mA)
* The Performance data shown in the graphs above is typical of device performance. For guaranteed parameters not indicated in the written specifications, please contact our application department. R10
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INTEGRATED CIRCUITS DIVISION
TS117
5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0
IF=2mA IF=5mA IF=10mA IF=20mA
-40
-20
0
20
40
60
80
1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 -20
0
2.0 1.5 1.0
60
80
-40
100
0 80
100
20
40
60
80
160 140 120 100
IF=20mA IF=10mA IF=5mA
80 60 40 20 0
-40
-20
0
20
40
60
80
100
-40
-20
0
20
40
60
80
100
Temperature (ºC)
Temperature (ºC)
Temperature (ºC)
Typical Load Current vs. Load Voltage (IF=2mA)
Typical Blocking Voltage vs. Temperature
Typical Leakage vs. Temperature Measured across Pins 7&8 0.016
425
0.014
420
0.012
0 -50 -100
Leakage (PA)
430
100 50
415 410 405
-1
0
1
2
-20
0
20
40
60
80
100
Temperature (ºC)
Load Voltage (V)
0.010 0.008 0.006
0.002 -40
3
120
0.004
400 395
-150
100
180
150
-2
0
Maximum Load Current vs. Temperature
1.0
0
-3
-20
Temperature (ºC)
1.5
0.5
Blocking Voltage (VP)
Load Current (mA)
40
2.0
0.5 60
20
Load Current (mA)
2.5 LED Current (mA)
LED Current (mA)
3.0
40
20
Typical IF for Switch Dropout vs. Temperature (IL=120mADC)
2.5
20
30
Temperature (ºC)
3.0
0
40
0
Typical IF for Switch Operation vs. Temperature (IL=120mADC)
-20
50
10
IF=5mA
Temperature (ºC)
-40
60
IF=2mA
-40
100
Typical On-Resistance vs. Temperature (IF=2mA, IL=120mADC)
Typical Turn-Off Time vs. Temperature (IL=120mADC)
On-Resistance (:)
Typical Turn-On Time vs. Temperature (IL=120mADC)
Turn-Off Time (ms)
Turn-On Time (ms)
RELAY PERFORMANCE DATA @25ºC (Unless Otherwise Noted)*
0 -40
-20
0
20
40
60
80
100
Temperature (ºC)
Load Current (A)
Energy Rating Curve 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 10Ps 100Ps 1ms 10ms 100ms
1s
10s
100s
Time * The Performance data shown in the graphs above is typical of device performance. For guaranteed parameters not indicated in the written specifications, please contact our application department.
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INTEGRATED CIRCUITS DIVISION
TS117
DETECTOR PERFORMANCE DATA @25ºC (Unless Otherwise Noted)*
8
4.0
7
3.5 3.0 2.5 2.0 1.5 1.0
12
6 5 4
IF=1mA IF=2mA IF=5mA IF=10mA IF=15mA IF=20mA
3 2 1
0.5 0 2
4
6
8
10
12
14
Forward Current (mA)
16
18
20
0
-40
-20
0
20
40
60
80
Temperature (ºC)
100
120
Collector Current (mA)
4.5
0
Typical Collector Current vs. Forward Current (VCE=0.5V)
Typical Normalized CTR vs. Temperature (VCE=0.5V) Normalized CTR (%)
Normalized CTR (%)
Typical Normalized CTR vs Forward Current (VCE=0.5V)
10 8 6 4 2 0
0
2
4
6
8
10
12
14
16
18
20
Forward Current (mA)
* The Performance data shown in the graphs above is typical of device performance. For guaranteed parameters not indicated in the written specifications, please contact our application department. R10
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INTEGRATED CIRCUITS DIVISION
TS117
Manufacturing Information Moisture Sensitivity All plastic encapsulated semiconductor packages are susceptible to moisture ingression. IXYS Integrated Circuits Division classified all of its plastic encapsulated devices for moisture sensitivity according to the latest version of the joint industry standard, IPC/JEDEC J-STD-020, in force at the time of product evaluation. We test all of our products to the maximum conditions set forth in the standard, and guarantee proper operation of our devices when handled according to the limitations and information in that standard as well as to any limitations set forth in the information or standards referenced below. Failure to adhere to the warnings or limitations as established by the listed specifications could result in reduced product performance, reduction of operable life, and/or reduction of overall reliability. This product carries a Moisture Sensitivity Level (MSL) rating as shown below, and should be handled according to the requirements of the latest version of the joint industry standard IPC/JEDEC J-STD-033. Device
Moisture Sensitivity Level (MSL) Rating
TS117 / TS117P / TS117S
MSL 1
ESD Sensitivity This product is ESD Sensitive, and should be handled according to the industry standard JESD-625.
Reflow Profile This product has a maximum body temperature and time rating as shown below. All other guidelines of J-STD-020 must be observed. Device
Maximum Temperature x Time
TS117 / TS117S
250ºC for 30 seconds
TS117P
260ºC for 30 seconds
Board Wash IXYS Integrated Circuits Division recommends the use of no-clean flux formulations. However, board washing to remove flux residue is acceptable. Since IXYS Integrated Circuits Division employs the use of silicone coating as an optical waveguide in many of its optically isolated products, the use of a short drying bake could be necessary if a wash is used after solder reflow processes. Chlorine- or Fluorine-based solvents or fluxes should not be used. Cleaning methods that employ ultrasonic energy should not be used.
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INTEGRATED CIRCUITS DIVISION
TS117 Mechanical Dimensions
TS117 2.540 ± 0.127 (0.100 ± 0.005)
9.652 ± 0.381 (0.380 ± 0.015)
8-0.800 DIA. (8-0.031 DIA.)
2.540 ± 0.127 (0.100 ± 0.005)
9.144 ± 0.508 (0.360 ± 0.020)
6.350 ± 0.127 (0.250 ± 0.005) Pin 1
PCB Hole Pattern
7.620 ± 0.254 (0.300 ± 0.010)
6.350 ± 0.127 (0.250 ± 0.005) 3.302 ± 0.051 (0.130 ± 0.002)
0.457 ± 0.076 (0.018 ± 0.003)
7.620 ± 0.127 (0.300 ± 0.005)
7.239 TYP. (0.285)
4.064 TYP (0.160)
7.620 ± 0.127 (0.300 ± 0.005)
0.254 ± 0.0127 (0.010 ± 0.0005)
Dimensions mm (inches)
0.813 ± 0.102 (0.032 ± 0.004)
TS117P 0 MIN / 0.102 MAX (0 MIN / 0.004 MAX)
2.540 ± 0.127 (0.100 ± 0.005) 6.350 ± 0.127 (0.250 ± 0.005)
7.620 ± 0.254 (0.300 ± 0.010)
9.398 ± 0.127 (0.370 ± 0.005)
Pin 1
2.286 MAX. (0.090 MAX.)
2.54 (0.10) 0.635 ± 0.127 (0.025 ± 0.005) 8.70 (0.3425)
1.55 (0.0610)
0.203 ± 0.013 (0.008 ± 0.0005)
9.652 ± 0.381 (0.380 ± 0.015)
PCB Land Pattern
0.65 (0.0255)
2.159 ± 0.025 (0.085 ± 0.001)
0.457 ± 0.076 (0.018 ± 0.003) 0.864 ± 0.120 (0.034 ± 0.004)
Dimensions mm (inches)
TS117S 9.652 ± 0.381 (0.380 ± 0.015) 2.540 ± 0.127 (0.100 ± 0.005)
6.350 ± 0.127 (0.250 ± 0.005) Pin 1
0.635 ± 0.127 (0.025 ± 0.005)
3.302 ± 0.051 (0.130 ± 0.002) 9.525 ± 0.254 (0.375 ± 0.010)
0.457 ± 0.076 (0.018 ± 0.003)
PCB Land Pattern 2.54 (0.10)
8.90 (0.3503)
1.65 (0.0649)
7.620 ± 0.254 (0.300 ± 0.010) 0.254 ± 0.0127 (0.010 ± 0.0005)
0.65 (0.0255)
4.445 ± 0.127 (0.175 ± 0.005)
Dimensions mm (inches)
0.813 ± 0.102 (0.032 ± 0.004)
R10
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INTEGRATED CIRCUITS DIVISION
TS117
TS117STR Tape & Reel 330.2 DIA. (13.00 DIA.) Top Cover Tape Thickness 0.102 MAX. (0.004 MAX.)
W=16.00 (0.63)
Bo=10.30 (0.406)
K0 =4.90 (0.193)
Ao=10.30 (0.406)
K1 =4.20 (0.165)
Embossed Carrier
Embossment
P=12.00 (0.472)
User Direction of Feed Dimensions mm (inches)
NOTES: 1. Dimensions carry tolerances of EIA Standard 481-2 2. Tape complies with all “Notes” for constant dimensions listed on page 5 of EIA-481-2
TS117PTR Tape & Reel 2.00 (0.079)
330.2 DIA. (13.00 DIA.)
Top Cover Tape Thickness 0.102 MAX. (0.004 MAX.)
Embossment
W = 16.00 (0.63)
7.50 (0.295)
Bo = 10.30 (0.406)
K0 = 2.70 (0.106) K1 = 2.00 (0.079)
Embossed Carrier
4.00 (0.157)
P = 12.00 (0.472) User Direction of Feed
Ao = 10.30 (0.406) Dimensions mm (inches)
NOTES: 1. All dimensions carry tolerances of EIA Standard 481-2 2. The tape complies with all “Notes” for constant dimensions listed on page 5 of EIA-481-2
For additional information please visit our website at: www.ixysic.com IXYS Integrated Circuits Division makes no representations or warranties with respect to the accuracy or completeness of the contents of this publication and reserves the right to make changes to specifications and product descriptions at any time without notice. Neither circuit patent licenses nor indemnity are expressed or implied. Except as set forth in IXYS Integrated Circuits Division’s Standard Terms and Conditions of Sale, IXYS Integrated Circuits Division assumes no liability whatsoever, and disclaims any express or implied warranty, relating to its products including, but not limited to, the implied warranty of merchantability, fitness for a particular purpose, or infringement of any intellectual property right. The products described in this document are not designed, intended, authorized or warranted for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or where malfunction of IXYS Integrated Circuits Division’s product may result in direct physical harm, injury, or death to a person or severe property or environmental damage. IXYS Integrated Circuits Division reserves the right to discontinue or make changes to its products at any time without notice.
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Specification: DS-TS117-R10 ©Copyright 2012, IXYS Integrated Circuits Division All rights reserved. Printed in USA. 12/22/2012
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