Transcript
TSUS5400, TSUS5401, TSUS5402 www.vishay.com
Vishay Semiconductors
Infrared Emitting Diode, 950 nm, GaAs FEATURES • • • • • • • • • • •
94 8390
DESCRIPTION
Package type: leaded Package form: T-1¾ Dimensions (in mm): Ø 5 Leads with stand-off Peak wavelength: λp = 950 nm High reliability Angle of half intensity: ϕ = ± 22° Low forward voltage Suitable for high pulse current operation Good spectral matching with Si photodetectors Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC
Note ** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902
TSUS5400 is an infrared, 950 nm emitting diode in GaAs technology molded in a blue-gray tinted plastic package.
APPLICATIONS • Infrared remote control and free air transmission systems with low forward voltage and small package requirements • Emitter in transmissive sensors • Emitter in reflective sensors
PRODUCT SUMMARY COMPONENT
Ie (mW/sr)
ϕ (deg)
λp (nm)
tr (ns)
14 17 20
± 22 ± 22 ± 22
950 950 950
800 800 800
TSUS5400 TSUS5401 TSUS5402
Note • Test conditions see table “Basic Characteristics”
ORDERING INFORMATION ORDERING CODE TSUS5400 TSUS5401 TSUS5402
PACKAGING
REMARKS
PACKAGE FORM
Bulk Bulk Bulk
MOQ: 4000 pcs, 4000 pcs/bulk MOQ: 4000 pcs, 4000 pcs/bulk MOQ: 4000 pcs, 4000 pcs/bulk
T-1¾ T-1¾ T-1¾
Note • MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER Reverse voltage Forward current Peak forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Rev. 1.8, 24-Aug-11
TEST CONDITION
tp/T = 0.5, tp = 100 μs tp = 100 μs
t ≤ 5 s, 2 mm from case J-STD-051, leads 7 mm, soldered on PCB
SYMBOL
VALUE
UNIT
VR IF IFM IFSM PV Tj Tamb Tstg Tsd RthJA
5 150 300 2.5 170 100 - 40 to + 85 - 40 to + 100 260 230
V mA mA A mW °C °C °C °C K/W
Document Number: 81056 1 For technical questions, contact:
[email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TSUS5400, TSUS5401, TSUS5402 www.vishay.com
Vishay Semiconductors 120
160
IF - Forward Current (mA)
PV - Power Dissipation (mW)
180
140 120 100
RthJA = 230 K/W
80 60 40 20
100 80 60
RthJA = 230 K/W 40 20
0 0
10
21313
20 30
40
50
60
70 80
90
0
100
0
Tamb - Ambient Temperature (°C)
21314
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
10
20 30 40
50 60 70 80
90 100
Tamb - Ambient Temperature (°C)
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) TEST CONDITION
SYMBOL
TYP.
MAX.
UNIT
IF = 100 mA, tp = 20 ms
VF
1.3
1.7
V
IF = 100 mA
TKVF
- 1.3
VR = 5 V
IR
VR = 0 V, f = 1 MHz, E = 0
Cj
30
pF
IF = 20 mA
TKφe
- 0.8
%/K
ϕ
± 22
deg
Peak wavelength
IF = 100 mA
λp
950
nm
Spectral bandwidth
IF = 100 mA
Δλ
50
nm
Temperature coefficient of λp
IF = 100 mA
TKλp
0.2
nm/K
IF = 100 mA
tr
800
ns
IF = 1.5 A
tr
400
ns
IF = 100 mA
tf
800
ns
IF = 1.5 A
tf
400
ns
d
2.9
mm
PARAMETER Forward voltage Temperature coefficient of VF Reverse current Junction capacitance Temperature coefficient of φe Angle of half intensity
Rise time Fall time Virtual source diameter
MIN.
mV/K 100
μA
TYPE DEDICATED CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Forward voltage
TEST CONDITION IF = 1.5 A, tp = 100 μs
IF = 100 mA, tp = 20 ms Radiant intensity IF = 1.5 A, tp = 100 μs
Radiant power
Rev. 1.8, 24-Aug-11
IF = 100 mA, tp = 20 ms
PART
SYMBOL
TYP.
MAX.
UNIT
TSUS5400
VF
MIN.
2.2
3.4
V
TSUS5401
VF
2.2
3.4
V
TSUS5402
VF
2.2
2.7
V
TSUS5400
Ie
7
14
35
mW/sr
TSUS5401
Ie
10
17
35
mW/sr
TSUS5402
Ie
15
20
35
TSUS5400
Ie
60
140
TSUS5401
Ie
85
160
mW/sr
TSUS5402
Ie
120
190
mW/sr
mW/sr mW/sr
TSUS5400
φe
13
mW
TSUS5401
φe
14
mW
TSUS5402
φe
15
mW
Document Number: 81056 2 For technical questions, contact:
[email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TSUS5400, TSUS5401, TSUS5402 www.vishay.com
Vishay Semiconductors
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
1000 Ie - Radiant Intensity (mW/sr)
I F - Forward Current (A)
10 1
I FSM = 2.5 A ( Single Pulse ) tp/T = 0.01 10 0
0.05 0.1 0.5
1.0 10 -1 -2 10 94 7989
TSUS 5401 TSUS 5402
100
TSUS5400
10
1
10 -1 10 0 10 1 t p - Pulse Duration (ms)
10 0
10 2
10 1 10 2 10 3 I F - Forward Current (mA)
94 7997
Fig. 3 - Pulse Forward Current vs. Pulse Duration
10 4
Fig. 6 - Radiant Intensity vs. Forward Current
10 4
Φ - Radiant Power (mW) e
I F - Forward Current (mA)
1000 10 3 10 2 10 1 10 0 10 -1
0
1
2
3
4
TSUS 5402 100 TSUS5400 10
1
0.1
V F - Forward Voltage (V)
94 7996
10 0
10 1 10 2 10 3 I F - Forward Current (mA)
94 7998
10 4
Fig. 4 - Forward Current vs. Forward Voltage Fig. 7 - Radiant Power vs. Forward Current
1.6
1.1 IF = 10 mA 1.2
1.0 Ie rel; Φe rel
VF rel - Relative Forward Voltage (V)
1.2
0.9
IF = 20 mA 0.8
0.8 0.4
0.7 0 94 7990
20
40
60
80
100
Tamb - Ambient Temperature (°C)
0 - 10 0 10 94 7993
50
100
140
T amb - Ambient Temperature (°C)
Fig. 5 - Relative Forward Voltage vs. Ambient Temperature Fig. 8 - Relative Radiant Intensity/Power vs. Ambient Temperature
Rev. 1.8, 24-Aug-11
Document Number: 81056 3 For technical questions, contact:
[email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TSUS5400, TSUS5401, TSUS5402 www.vishay.com
Vishay Semiconductors
0°
I e rel - Relative Radiant Intensity
Φe rel - Relative Radiant Power
1.25 1.0
0.75 0.5
0.25
10°
20° 30°
40° 1.0 0.9
50°
0.8
60° 70°
0.7
IF = 100 mA 0 900
80° 0.6
1000
950 λ - Wavelength (nm)
94 7994
0.4
0.2
0
0.2
0.4
0.6
94 7999
Fig. 9 - Relative Radiant Power vs. Wavelength
Fig. 10 - Relative Radiant Intensity vs. Angular Displacement
PACKAGE DIMENSIONS in millimeters
C ± 0.15
A
± 0.15
7.7
< 0.7
± 0.3
8.7
11.9
± 0.3
(4.1)
5.8
R 2.49 (sphere)
34.9
± 0.55
Area not plane
± 0.25
Ø 5 ± 0.15
1 min.
1.1
0.5 0.5
+ 0.15 - 0.05
technical drawings according to DIN specifications
+ 0.15 - 0.05
2.54 nom.
6.544-5258.01-4 Issue: 5; 19.05.09 96 12119
Rev. 1.8, 24-Aug-11
Document Number: 81056 4 For technical questions, contact:
[email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice www.vishay.com
Vishay
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Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000
