Transcript
ULN2001A, ULN2002A, ULN2003A, ULN2004A DARLINGTON TRANSISTOR ARRAYS SLRS027 – DECEMBER 1976 – REVISED APRIL 1993
HIGH-VOLTAGE HIGH-CURRENT DARLINGTON TRANSISTOR ARRAYS
D D D D D D
500-mA Rated Collector Current (Single Output) High-Voltage Outputs . . . 50 V Output Clamp Diodes Inputs Compatible With Various Types of Logic Relay Driver Applications Designed to Be Interchangeable With Sprague ULN2001A Series
D OR N PACKAGE (TOP VIEW)
1B 2B 3B 4B 5B 6B 7B E
description
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1C 2C 3C 4C 5C 6C 7C COM
The ULN2001A, ULN2002A, ULN2003A, and ULN2004A are monolithic high-voltage, high-current Darlington transistor arrays. Each consists of seven npn Darlington pairs that feature high-voltage outputs with common-cathode clamp diodes for switching inductive loads. The collector-current rating of a single Darlington pair is 500 mA. The Darlington pairs may be paralleled for higher current capability. Applications include relay drivers, hammer drivers, lamp drivers, display drivers (LED and gas discharge), line drivers, and logic buffers. For 100-V (otherwise interchangeable) versions, see the SN75465 through SN75469. The ULN2001A is a general-purpose array and can be used with TTL and CMOS technologies. The ULN2002A is specifically designed for use with 14- to 25-V PMOS devices. Each input of this device has a zener diode and resistor in series to control the input current to a safe limit. The ULN2003A has a 2.7-kΩ series base resistor for each Darlington pair for operation directly with TTL or 5-V CMOS devices. The ULN2004A has a 10.5-kΩ series base resistor to allow its operation directly from CMOS devices that use supply voltages of 6 to 15 V. The required input current of the ULN2004A is below that of the ULN2003A, and the required voltage is less than that required by the ULN2002A.
logic symbol†
logic diagram 9 CLAMP
1B 2B 3B 4B 5B 6B 7B
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9 COM
1B
1C 2C
2B
3C 4C
3B
5C 6C
4B
7C
† This symbol is in accordance with ANSI/IEEE Std 91-1984 and IEC Publication 617-12.
5B
6B
7B
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COM 1C
2C
3C
4C
5C
6C
7C
Copyright 1993, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.
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• DALLAS, TEXAS 75265
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ULN2001A, ULN2002A, ULN2003A, ULN2004A DARLINGTON TRANSISTOR ARRAYS SLRS027 – DECEMBER 1976 – REVISED APRIL 1993
schematics (each Darlington pair) COM
COM 7V
Output C
Output C
Input B
Input B
10.5 kΩ 7.2 kΩ
E 7.2 kΩ
3 kΩ
3 kΩ
E
ULN2002A
ULN2001A COM RB
Output C
Input B ULN2003A: RB = 2.7 kΩ ULN2004A: RB = 10.5 kΩ
7.2 kΩ
3 kΩ
E
ULN2003A, ULN2004A All resistor values shown are nominal.
absolute maximum ratings at 25°C free-air temperature (unless otherwise noted) Collector-emitter voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 V Input voltage, VI (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V Peak collector current (see Figures 14 and 15) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mA Output clamp current, IOK . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mA Total emitter-terminal current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 2.5 A Continuous total power dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Dissipation Rating Table Operating free-air temperature range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 20°C to 85°C Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 65°C to 150°C Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C NOTE 1: All voltage values are with respect to the emitter/substrate terminal E, unless otherwise noted. DISSIPATION RATING TABLE TA = 25°C POWER RATING
DERATING FACTOR ABOVE TA = 25°C
TA = 85°C POWER RATING
D
950 mW
7.6 mW/°C
494 mW
N
1150 mW
9.2 mW/°C
598 mW
PACKAGE
2
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• DALLAS, TEXAS 75265
ULN2001A, ULN2002A, ULN2003A, ULN2004A DARLINGTON TRANSISTOR ARRAYS SLRS027 – DECEMBER 1976 – REVISED APRIL 1993
electrical characteristics, TA = 25°C (unless otherwise noted) PARAMETER VI(on)
On-state input voltage
TEST FIGURE 6
TEST CONDITIONS VCE = 2 V, II = 250 µA,
IC = 300 mA IC = 100 mA IC = 200 mA IC = 350 mA
VCE(sat) ( )
Collector-emitter C ll t itt saturation voltage
5
II = 350 µA, II = 500 µA,
VF
Clamp forward voltage
8
IF = 350 mA VCE = 50 V,
ICEX
Collector cutoff current
1 2
VCE = 50 V,, TA = 70°C VCE = 50 V,, TA = 70°C
II(off) I( ff)
Off state input current Off-state
3
II
Input current
4
IR
Clamp reverse current
7
hFE
Static forward current transfer ratio
5
Ci
Input capacitance
VI = 17 V VR = 50 V,
ULN2001A MIN
MAX
TYP
MAX
0.9
1.1
0.9
1.1
MIN
1
1.3
1
1.3
1.2
1.6
1.2
1.6
1.7
2
1.7
2
13
II = 0 II = 0 VI = 6 V IC = 500 µ µA,
ULN2002A
TYP
50
50
100
100
50
65
50
VR = 50 V
VI = 0,
f = 1 MHz
V V µA
µA
65 0.82
IC = 350 mA
V
500
TA = 70°C
VCE = 2 V,
UNIT
1.25
100
100
50
50
mA µA
1000 15
25
15
25
pF
electrical characteristics, TA = 25°C (unless otherwise noted) PARAMETER
TEST FIGURE
TEST CONDITIONS
ULN2003A MIN
TYP
IC = 125 mA IC = 200 mA VI( I(on))
VCE(sat) ( )
ICEX
On state input voltage On-state
Collector-emitter C ll t itt saturation voltage
Collector cutoff current
6
VCE = 2 V
MAX
IC = 250 mA IC = 275 mA
2.7
IC = 300 mA IC = 350 mA
3
6 7
1.1
5
1
1.3
1
1.3
II = 500 µA, VCE = 50 V,
IC = 350 mA II = 0
1.2
1.6
1.2
1.6
1 2
VCE = 50 V,, TA = 70°C
II = 0 VI = 1 V
Off state input current Off-state
3
VCE = 50 V,, TA = 70°C
II
Input current
4
7
50
VI = 3.85 V VI = 5 V
0.93
TA = 70°C f = 1 MHz
POST OFFICE BOX 655303
50
100
100
• DALLAS, TEXAS 75265
2
65
VI = 12 V VR = 50 V VR = 50 V, VI = 0,
50
V
µA
500 1.7
IC = 500 µ µA,,
V
8 0.9
II(off) I( ff)
UNIT
5 2.4
1.1
IF = 350 mA
Input capacitance
TYP
0.9
8
Ci
MIN
IC = 100 mA IC = 200 mA
Clamp forward voltage
Clamp reverse current
MAX
II = 250 µA, II = 350 µA,
VF
IR
ULN2004A
15
1.7 50
2
V µA
65
1.35 0.35
0.5
1
1.45
50
50
100
100
25
15
25
mA
µA pF
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ULN2001A, ULN2002A, ULN2003A, ULN2004A DARLINGTON TRANSISTOR ARRAYS SLRS027 – DECEMBER 1976 – REVISED APRIL 1993
switching characteristics, TA = 25°C PARAMETER tPLH tPHL
TEST CONDITIONS
Propagation delay time, low-to-high-level output
See Figure 9
Propagation delay time, high-to-low-level output
VOH
MIN
IO ≈ 300 mA,
VS = 50 V, See Figure 10
High-level output voltage after switching
TYP
MAX
0.25
1
UNIT µs
0.25
1
µs
VS – 20
mV
PARAMETER MEASUREMENT INFORMATION Open
Open
VCE ICEX
VCE ICEX
Open
VI
Figure 1. ICEX Test Circuit Open
Figure 2. ICEX Test Circuit
VCE Open
II(off)
IC II(on) Open
VI
Figure 3. II(off) Test Circuit
Figure 4. II Test Circuit
Open Open
IC hFE = II
II
VCE
IC VI(on)
VCE
NOTE: II is fixed for measuring VCE(sat), variable for measuring hFE.
Figure 5. hFE, VCE(sat) Test Circuit
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Figure 6. VI(on) Test Circuit
• DALLAS, TEXAS 75265
IC
ULN2001A, ULN2002A, ULN2003A, ULN2004A DARLINGTON TRANSISTOR ARRAYS SLRS027 – DECEMBER 1976 – REVISED APRIL 1993
PARAMETER MEASUREMENT INFORMATION VR IR
VF
Open
IF
Open
Figure 7. IR Test Circuit
Figure 8. VF Test Circuit
50%
Input
50%
t PHL
t PLH 50%
Output
50%
VOLTAGE WAVEFORMS
Figure 9. Propagation Delay Time Waveforms VS Input
Open
ULN2001A only 2.7 kΩ Pulse Generator (see Note A)
2 mH 1N3064 200 Ω Output
ULN2002A ULN2003A ULN2004A
CL = 15 pF (see Note B) TEST CIRCUIT
≤ 5 ns
≤ 10 ns
90% 1.5 V
Input 10%
VIH (see Note C)
90% 1.5 V 10%
40 µs
0V VOH
Output VOL VOLTAGE WAVEFORMS NOTES: A. The pulse generator has the following characteristics: PRR = 12.5 kHz, ZO = 50 Ω. B. CL includes probe and jig capacitance. C. For testing the ULN2001A and the ULN2003A, VIH = 3 V; for the ULN2002A, VIH = 13 V; for the ULN2004A, VIH = 8 V.
Figure 10. Latch-Up Test Circuit and Voltage Waveforms
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ULN2001A, ULN2002A, ULN2003A, ULN2004A DARLINGTON TRANSISTOR ARRAYS SLRS027 – DECEMBER 1976 – REVISED APRIL 1993
TYPICAL CHARACTERISTICS COLLECTOR-EMITTER SATURATION VOLTAGE vs TOTAL COLLECTOR CURRENT (TWO DARLINGTONS PARALLELED)
COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT (ONE DARLINGTON) VCE(sat) VCE(sat) – Collector-Emitter Saturation Voltage – V
VCE(sat) VCE(sat) – Collector-Emitter Saturation Voltage – V
2.5 TA = 25°C 2 II = 250 µA II = 350 µA II = 500 µA
1.5
1
0.5
0 0
100
200
300
400
500
600
700
800
2.5 TA = 25°C
II = 250 µA
2 II = 350 µA 1.5 II = 500 µA 1
0.5
0 0
100
200
300
Figure 12
Figure 11 COLLECTOR CURRENT vs INPUT CURRENT 500 RL = 10 Ω TA = 25°C
IIC C – Collector Current – mA
450 400
VS = 10 V
350
VS = 8 V 300 250 200 150 100 50 0 0
500
600
700
IC(tot) – Total Collector Current – mA
IC – Collector Current – mA
25
50
75
100
125
150
II – Input Current – µA
Figure 13
6
400
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
175
200
800
ULN2001A, ULN2002A, ULN2003A, ULN2004A DARLINGTON TRANSISTOR ARRAYS SLRS027 – DECEMBER 1976 – REVISED APRIL 1993
THERMAL INFORMATION N PACKAGE MAXIMUM COLLECTOR CURRENT vs DUTY CYCLE
D PACKAGE MAXIMUM COLLECTOR CURRENT vs DUTY CYCLE 600
IIC C – Maximum Collector Current – mA
IIC C – Maximum Collector Current – mA
600
500 N=1 N=4
400
N=3 300
N=2 N=6 N=7 N=5
200
100
TA = 70°C N = Number of Outputs Conducting Simultaneously
500 N=1 N=3
N=2 400
N=4 300
N=5 N=6 N=7
200
100
TA = 85°C N = Number of Outputs Conducting Simultaneously
0
0 0
10
20
30
40
50
60
70
80
90 100
0
10
20
30
40
50
60
70
80
90 100
Duty Cycle – %
Duty Cycle – %
Figure 14
Figure 15
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• DALLAS, TEXAS 75265
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ULN2001A, ULN2002A, ULN2003A, ULN2004A DARLINGTON TRANSISTOR ARRAYS SLRS027 – DECEMBER 1976 – REVISED APRIL 1993
APPLICATION INFORMATION ULN2002A
VSS
P-MOS Output
ULN2003A
VCC
V
V
1
16
1
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2
15
2
15
3
14
3
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13
4
13
5
12
5
12
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10
7
10
8
9
8
9 Lamp Test
TTL Output
Figure 16. P-MOS to Load ULN2004A
VDD
Figure 17. TTL to Load ULN2003A
VCC
V
V
1
16
1
16
2
15
2
15
3
14
RP 3
14
4
13
4
13
5
12
5
12
6
11
6
11
7
10
7
10
8
9
8
9
CMOS Output TTL Output
Figure 18. Buffer for Higher Current Loads
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POST OFFICE BOX 655303
Figure 19. Use of Pullup Resistors to Increase Drive Current
• DALLAS, TEXAS 75265
IMPORTANT NOTICE Texas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information to verify, before placing orders, that information being relied on is current and complete. All products are sold subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those pertaining to warranty, patent infringement, and limitation of liability. TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with TI’s standard warranty. Testing and other quality control techniques are utilized to the extent TI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except those mandated by government requirements. CERTAIN APPLICATIONS USING SEMICONDUCTOR PRODUCTS MAY INVOLVE POTENTIAL RISKS OF DEATH, PERSONAL INJURY, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE (“CRITICAL APPLICATIONS”). TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT DEVICES OR SYSTEMS OR OTHER CRITICAL APPLICATIONS. INCLUSION OF TI PRODUCTS IN SUCH APPLICATIONS IS UNDERSTOOD TO BE FULLY AT THE CUSTOMER’S RISK. In order to minimize risks associated with the customer’s applications, adequate design and operating safeguards must be provided by the customer to minimize inherent or procedural hazards. TI assumes no liability for applications assistance or customer product design. TI does not warrant or represent that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other intellectual property right of TI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. TI’s publication of information regarding any third party’s products or services does not constitute TI’s approval, warranty or endorsement thereof.
Copyright 1998, Texas Instruments Incorporated
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