Umx9 Pin 9501fmr Diode R

Transcript

UMX9 9501FMR R PIN DIODE   Low w Magneticc Switchinng Diode Foor MR Appplication RoHS Compliannt     RAL DESC CRIPTION GENER   With high is solation, low lo oss, and low dis stortion charac cteristics, this Micros semi packaged PIN diode is suited for antenna switch applications where e size and pow wer handling capability y is designed fo or MRI applicattions are critical.. The assembly where low susceptance is s necessary. The surface mou unt s ideal for high volume automa ated assembly package is applications. Its advanta ages also includ de the low forw ward bias resisttance and high ze ero bias imped dance that are essential e for low w loss, high isolation, and wide bandwidth b antenna switch ce. Its square design d makes this t device idea al for use performanc with autom matic insertion equipment. e KE EY FEATU URES        High Po ower Surface M Mount Package. Specifie ed low distortion n, low loss. Low bia as current requiirements. High zero bias impeda ance. Low ma agnetic signaturre for MR applicattions. Compattible with autom matic insertion equipme ent. RoHS ccompliant 1 1 The UMX9501FMR is supplied with ha e tin finish. RoHS ccompliant matte Consult factory for dettails. APPLIC CATION/B BENEFITS S    Low Losss T/R Switchin ng. MRI Sw witching. Availabl e on Tape & R Reel For the t most curre ent data, cons sult MICROSEMI’s website e: www.MICR ROSEMI.com m Specific cations are subject to chang ge, consult th he RFIS facto ory at (978) 44 42-5600 for th he latest informattion.     UMX9 9501FMR R PIN DIODE   Low w Magneticc Switchinng Diode Foor MR Appplication RoHS Compliannt   ABSOL LUTE MAX XIMUM RA ATINGS @ 25C (UNL LESS OTH HERWISE SPECIFIE ED)   Rating Symbol Va alue Unit Maximu um Reverse Vo oltage VR 1 150 V Average Power Dissip pation PD  4 W Storage e Temperature Range TSTG  -65 tto 175 °C Operating Temperature Range TOP  - 65 to 175 °C Therma al resistance. (2 25°C contacts, free airr) Rθ  3 37.5 °C/W ELECT TRICAL PE ERFORMA ANCE @ 2 25C (UNLESS OTHERWISE S SPECIFIED)   Parameter P Symb bol Con nditions VR = 50V f = 1 MHz IF = 50 mA f = 100 1 MHz f = 100MHz Vr V = 0V Min Typ Max U Units 0.75 0.9 pF 0.5 0.75 O Ohms Total Ca apacitance CT Series Resistance R RS Parallel Resistance RP Carrier Lifetime TL IF = 10 mA Reverse e Current IR VR = 50 10 μA Forward d Voltage VF IF = 100mA 1.0 V 5 10 kO Ohms 2 4 μs Transm mit Harmonic Distortio on PIN = 50 W f = 50 MHz IF = 50 mA 80 -dB Receive e 3rd Order Harmon nic Distortion F = 100 MHz V=0V FA = 50 MHz FB = 51 MHz 60 -dB               For the t most curre ent data, cons sult MICROSEMI’s website e: www.MICR ROSEMI.com m Specific cations are subject to chang ge, consult th he RFIS facto ory at (978) 44 42-5600 for th he latest informattion.     UMX9 9501FMR R PIN DIODE   Low w Magneticc Switchinng Diode Foor MR Appplication RoHS Compliannt   TYPICAL T RS VS IF TY YPICAL CT T VS VR IF CURVE     For the t most curre ent data, cons sult MICROSEMI’s website e: www.MICR ROSEMI.com m Specific cations are subject to chang ge, consult th he RFIS facto ory at (978) 44 42-5600 for th he latest informattion.     UMX9 9501FMR R PIN DIODE   Low w Magneticc Switchinng Diode Foor MR Appplication RoHS Compliannt   PACKA AGE OUTLINE  FO OOTPRINT T  NO OTES: 1. These dimensions will matc ch the terminals s and provide fo or additional so older fillets at the outboard en nds at least as wide as the mselves, assum ming accuracy of placement within w 0.005”. terminals them 2. If the mountin ng method chos sen requires us se of an adhes sive separate frrom the solder compound, a rround (or square) spot of cement shoulld be centrally located. Revision Hiistory Revision n Level / Date e 1 / 14 Sep ptember 15 Para a. Affected - Description n Initial Relea ase For the t most curre ent data, cons sult MICROSEMI’s website e: www.MICR ROSEMI.com m Specific cations are subject to chang ge, consult th he RFIS facto ory at (978) 44 42-5600 for th he latest informattion.