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Unisonic Technologies Co., Ltd D965ss / D965ass

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UNISONIC TECHNOLOGIES CO., LTD D965SS / D965ASS NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT NPN TRANSISTOR  FEATURES * Collector current up to 5A * D965SS : Collector-Emitter voltage up to 20 V * D965ASS : Collector-Emitter voltage up to 30 V  APPLICATIONS * Audio amplifier * Flash unit of camera * Switching circuit   ORDERING INFORMATION Order Number Package D965SSG-x-AE3-R D965ASSG-x-AE3-R SOT-23 SOT-23 Pin Assignment 1 2 3 E B C E B C Packing Tape Reel Tape Reel MARKING UTC D965SS UTC D965ASS D65AG www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., LTD 1 of 4 QW-R206-016.D D965SS / D965ASS  NPN EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING PARAMETER Collector-Base voltage Collector-Emitter Voltage SYMBOL VCBO D965SS D965ASS VEBO Pc IC TJ TSTG V V mW A C C ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER Collector-base breakdown voltage Collector-emitter breakdown D965SS voltage D965ASS SYMBOL BVCBO Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Current gain bandwidth product Output capacitance TEST CONDITIONS IC=100μA, IE=0 BVCEO IC=1mA, IB=0 BVEBO ICBO IEBO hFE1 hFE2 IC =0, IE=10μA VCB=10V, IE=0 VEB=7V, IC=0 VCE=2V, IC=1mA hFE3  UNIT V 20 30 7 750 5 150 -65 ~ +150 VCEO Emitter-Base Voltage Collector dissipation(Ta=25C) Collector current Junction Temperature Storage Temperature  RATINGS 40 VCE(SAT) fT Cob VCE=2V, IC=0.5A VCE=2V, IC=2A Ic=3A, IB= 0.1A VCE=6V,IC=50mA VCB=20V,IE=0, f=1MHz MIN TYP MAX UNIT 40 V 20 30 7 100 100 V V V nA nA 200 230 150 800 1 150 50 V MHz pF CLASSIFICATION OF hFE2 RANK RANGE Q 230~380 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw R 340~600 S 560~800 2 of 4 QW-R206-016.D D965SS / D965ASS TYPICAL CHARACTERISTICS HFE, DC current Gain IC, Collector current (A)  NPN EPITAXIAL SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 4 QW-R206-016.D D965SS / D965ASS NPN EPITAXIAL SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R206-016.D